Infineon Technologies Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29CL016J0PQAM03	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	FLATPACK					.8 mm	125 Cel		512KX32	512K	-40 Cel					QUAD		R-PQFP-G80		3.6 V	3.35 mm		66 MHz	14 mm	Not Qualified	.000065 ms		BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							20 mm		54 ns	3.3
S29CL016J0PQFM03	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	FLATPACK					.8 mm	125 Cel		512KX32	512K	-40 Cel					QUAD		R-PQFP-G80		3.6 V	3.35 mm		66 MHz	14 mm	Not Qualified	.000065 ms		BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							20 mm		54 ns	3.3
S29GL128P90TAIV20	Infineon Technologies	FLASH	INDUSTRIAL	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3			1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		128MX1	128M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				134217728 bit	2.7 V						NOR TYPE		18.4 mm		90 ns	3
S26HL256TFPBHV023	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			33554432 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	OPEN-DRAIN	32MX8	32M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	640000 Write/Erase Cycles	166 MHz	6 mm			SPI		268435456 bit	2.7 V						NOR TYPE		8 mm			3
S26HS256TFPBHM010	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	125 Cel	OPEN-DRAIN	32MX8	32M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24		2 V	1 mm	640000 Write/Erase Cycles	166 MHz	6 mm			SPI		268435456 bit	1.7 V						NOR TYPE		8 mm			1.8
S29CD032J1MFAI133	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	2.6			32	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		1MX32	1M	-40 Cel			TIN LEAD		BOTTOM		R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified			TOP	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0			NOR TYPE		13 mm		54 ns	2.7
S29GL064N90BFA032	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B48		3.6 V	1 mm			6.15 mm				TOP	67108864 bit	2.7 V						NOR TYPE		8.15 mm		90 ns	3
S29CL016J1MFFM033	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	GRID ARRAY, LOW PROFILE					1 mm	125 Cel		512KX32	512K	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified			BOTTOM	16777216 bit	3 V	TOP BOOT BLOCK		e1			NOR TYPE		13 mm		54 ns	3.3
S29GL512T11DHAV30	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		32MX16	32M	-40 Cel					BOTTOM		S-PBGA-B64		3.6 V	1.4 mm			9 mm				BOTTOM/TOP	536870912 bit	2.7 V						NOR TYPE		9 mm		110 ns	2.7
S29CL032J0RQAI112	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			32	FLATPACK					.8 mm	85 Cel		1MX32	1M	-40 Cel			TIN LEAD		QUAD		R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified			BOTTOM	33554432 bit	3 V	BOTTOM BOOT BLOCK		e0			NOR TYPE		20 mm		48 ns	3.3
S29GL01GT12DHVV43	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	105 Cel		64MX16	64M	-40 Cel					BOTTOM		S-PBGA-B64		3.6 V	1.4 mm			9 mm				BOTTOM/TOP	1073741824 bit	2.7 V						NOR TYPE		9 mm		120 ns	2.7
S29CL032J1JQFM00	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	FLATPACK					.8 mm	125 Cel		512KX32	512K	-40 Cel					QUAD		R-PQFP-G80		3.6 V	3.35 mm		40 MHz	14 mm	Not Qualified	.000065 ms		TOP	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							20 mm		54 ns	3.3
S29CD016J0MQFI12	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES		YES	QUAD		R-PQFP-G80		2.75 V	3.35 mm		56 MHz	14 mm	Not Qualified	.000065 ms		TOP	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29CD016J0MQAM022	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6		FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified			TOP	16777216 bit	2.5 V			e0			NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29GL256P12FAI012	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		16MX16	16M	-40 Cel			TIN LEAD		BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				268435456 bit	2.7 V			e0			NOR TYPE		13 mm		110 ns	3
S29CD032J0PQFM020	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES	MATTE TIN	YES	QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified			TOP	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e3	40	260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29GL032N90BAI43	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		2MX16	2M	-40 Cel			TIN LEAD		BOTTOM		R-PBGA-B48	3	3.6 V	1 mm			6.15 mm	Not Qualified				33554432 bit	2.7 V			e0			NOR TYPE		8.15 mm		90 ns	3
S29GL512T11TFB040	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	105 Cel		32MX16	32M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm					536870912 bit	2.7 V	CAN ALSO BE ORGANISED AS 512MX1					NOR TYPE		18.4 mm		110 ns	2.7
S29CL016J1MQFM023	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	FLATPACK					.8 mm	125 Cel		512KX32	512K	-40 Cel			MATTE TIN		QUAD		R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified			TOP	16777216 bit	3 V	TOP BOOT BLOCK		e3			NOR TYPE		20 mm		54 ns	3.3
S26HS512TFPBHA030	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	OPEN-DRAIN	64MX8	64M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24		2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	6 mm			SPI		536870912 bit	1.7 V						NOR TYPE		8 mm			1.8
S29CL016J1JFFM130	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	GRID ARRAY, LOW PROFILE					1 mm	125 Cel		512KX32	512K	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified			BOTTOM	16777216 bit	3 V	TOP BOOT BLOCK		e1			NOR TYPE		13 mm		54 ns	3.3
S29GL01GT12FAI020	Infineon Technologies	FLASH
S29CL032J1MFFI123	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			32	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		1MX32	1M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified			TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1			NOR TYPE		13 mm		54 ns	3.3
S29CD016J0PFAI100	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified			TOP	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29GL01GT12DHN013	Infineon Technologies	FLASH	AUTOMOTIVE	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	125 Cel		64MX16	64M	-40 Cel					BOTTOM		S-PBGA-B64	3	3.6 V	1.4 mm			9 mm					1073741824 bit	2.7 V								9 mm		120 ns	2.7
S29WS01GS0SWHW010	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.65 mm	85 Cel		64MX16	64M	-25 Cel					BOTTOM		R-PBGA-B186		1.95 V	1.2 mm			11 mm	Not Qualified				1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE							13 mm		115 ns	1.8
S29CL016J0MQAM110	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	FLATPACK					.8 mm	125 Cel		512KX32	512K	-40 Cel			TIN LEAD		QUAD		R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified			BOTTOM	16777216 bit	3 V	TOP BOOT BLOCK		e0			NOR TYPE		20 mm		54 ns	3.3
S29CD016J0JQAI002	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6		FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified			TOP	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0			NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S28HS01GTGABHA0330	Infineon Technologies	FLASH																																																												1.8
S29CL016J0MQAM132	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	FLATPACK					.8 mm	125 Cel		512KX32	512K	-40 Cel			TIN LEAD		QUAD		R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified			BOTTOM	16777216 bit	3 V	TOP BOOT BLOCK		e0			NOR TYPE		20 mm		54 ns	3.3
S29CL016J0PQAM00	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	FLATPACK					.8 mm	125 Cel		512KX32	512K	-40 Cel					QUAD		R-PQFP-G80		3.6 V	3.35 mm		66 MHz	14 mm	Not Qualified	.000065 ms		TOP	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							20 mm		54 ns	3.3
S29CL032J0PFFI012	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified			BOTTOM	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	3.3	YES
S29CD016J0MQFM122	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6		FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES	MATTE TIN	YES	QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified			TOP	16777216 bit	2.5 V			e3			NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29WS128P0LBAW003	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	8,126	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B84	3	1.95 V	1 mm			8 mm	Not Qualified			BOTTOM/TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1			NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
S29GL512T12TFIV13	Infineon Technologies	FLASH
S29XS128RABBHI003	Infineon Technologies	FLASH	INDUSTRIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16MX8	16M	-40 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified			TOP	134217728 bit	1.7 V	TOP BOOT BLOCK							7.7 mm		80 ns	1.8
S29CL016J0MQFM122	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	FLATPACK					.8 mm	125 Cel		512KX32	512K	-40 Cel			MATTE TIN		QUAD		R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified			TOP	16777216 bit	3 V			e3			NOR TYPE		20 mm		54 ns	3.3
S29GL064N11TFAV62	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		4MX16	4M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm				BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		18.4 mm		110 ns	3
S29CL032J0JFFI120	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			32	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		1MX32	1M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified			TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1					13 mm		54 ns	3.3
S29GL064N90DFI072	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM		S-PBGA-B64		3.6 V	1.4 mm			9 mm	Not Qualified			BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		9 mm		90 ns	3
S29GL512T11TFB043	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	105 Cel		32MX16	32M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm				BOTTOM/TOP	536870912 bit	2.7 V	CAN ALSO BE ORGANISED AS 512MX1					NOR TYPE		18.4 mm		110 ns	2.7
S29GL512T11DHN043	Infineon Technologies	FLASH
S29CL032J0JQFI00	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	85 Cel		512KX32	512K	-40 Cel	16,62	YES		YES	QUAD		R-PQFP-G80		3.6 V	3.35 mm		40 MHz	14 mm	Not Qualified	.000065 ms		TOP	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE	.00006 Amp	20 mm	YES	54 ns	3.3	YES
S29CL032J0MBFM003	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES		YES	BOTTOM		R-PBGA-B80		3.6 V	1.4 mm			9 mm	Not Qualified			TOP	33554432 bit	3 V						NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29CL016J1JFAM120	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	GRID ARRAY, LOW PROFILE					1 mm	125 Cel		512KX32	512K	-40 Cel			TIN LEAD		BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified			TOP	16777216 bit	3 V	TOP BOOT BLOCK		e0			NOR TYPE		13 mm		54 ns	3.3
S29CL016J1JFFI110	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		512KX32	512K	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified			BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1			NOR TYPE		13 mm		54 ns	3.3
S29CD032J0JFAI012	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified			BOTTOM	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29XS128R0SBHI000	Infineon Technologies	FLASH	INDUSTRIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16MX8	16M	-40 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified			TOP	134217728 bit	1.7 V	TOP BOOT BLOCK							7.7 mm		80 ns	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.