Intel Flash Memory 88

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
EPCS4SI8N	Intel	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	524288 words	3.3		3.3	8	SMALL OUTLINE			Flash Memories			85 Cel	3-STATE	512KX8	512K	-40 Cel			NICKEL PALLADIUM GOLD		DUAL	R-PDSO-G8	3	3.6 V		100000 Write/Erase Cycles	40 MHz		Not Qualified			4194304 bit	2.7 V			e4	20	260		.00005 Amp
EPCS16SI8N	Intel	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3.3		3.3	8	SMALL OUTLINE			Flash Memories			85 Cel	3-STATE	2MX8	2M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL	R-PDSO-G8	3	3.6 V		100000 Write/Erase Cycles	40 MHz		Not Qualified			16777216 bit	2.7 V			e4	20	260		.00005 Amp
EPCS64SI16N	Intel	CONFIGURATION MEMORY	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	8388608 words	3.3		3.3	8	SMALL OUTLINE			Flash Memories			85 Cel	3-STATE	8MX8	8M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL	R-PDSO-G16	3	3.6 V		100000 Write/Erase Cycles	40 MHz		Not Qualified			67108864 bit	2.7 V			e4				.0001 Amp
EPCQ16ASI8N	Intel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	16777216 words	3.3			1	SMALL OUTLINE				20	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel			Tin (Sn)		DUAL	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	100 MHz	3.9 mm				16777216 bit	2.7 V			e3	NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	4.9 mm			3.3
EPCS1SI8N	Intel	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	131072 words	3.3		3.3	1	SMALL OUTLINE			Flash Memories			85 Cel	3-STATE	128KX8	128K	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL	R-PDSO-G8	3	3.6 V		100000 Write/Erase Cycles	40 MHz		Not Qualified			1048576 bit	2.7 V			e4	30	260		.00005 Amp
EPCQ256SI16N	Intel	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	268435456 words	3.3		3/3.3	1	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel	3-STATE	256MX1	256M	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	20 MHz	7.5 mm	Not Qualified	8 ms		268435456 bit	2.7 V			e4	40	260	NOR TYPE	.0001 Amp	10.3 mm			3
EPCS4SI8	Intel	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	524288 words	3.3		3.3	8	SMALL OUTLINE			Flash Memories			85 Cel	3-STATE	512KX8	512K	-40 Cel			TIN LEAD		DUAL	R-PDSO-G8	3	3.6 V		100000 Write/Erase Cycles	40 MHz		Not Qualified			4194304 bit	2.7 V			e0				.00005 Amp
EPCS128SI16N	Intel	CONFIGURATION MEMORY	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	16777216 words	3.3		3.3	8	SMALL OUTLINE			Flash Memories			85 Cel	3-STATE	16MX8	16M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL	R-PDSO-G16	3	3.6 V		100000 Write/Erase Cycles	40 MHz		Not Qualified			134217728 bit	2.7 V			e4	20	260		.0001 Amp
AM29F010B-70JF	Intel	FLASH		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6			20	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES			QUAD	R-PQCC-J32		5.5 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm		.00007 ms		1048576 bit	4.5 V						NOR TYPE	.000005 Amp	13.97 mm		70 ns	5	YES
AM29F010B-70JI	Intel	FLASH		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6			20	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES			QUAD	R-PQCC-J32		5.5 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm		.00007 ms		1048576 bit	4.5 V						NOR TYPE	.000005 Amp	13.97 mm		70 ns	5	YES
AM29F010B-70EF	Intel	FLASH		32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20			20	.5 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES			DUAL	R-PDSO-G32		5.5 V	1.2 mm	1000000 Write/Erase Cycles		8 mm		.00007 ms		1048576 bit	4.5 V						NOR TYPE	.000005 Amp	18.4 mm		70 ns	5	YES
AM29F010B-55JF	Intel	FLASH		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6			20	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES			QUAD	R-PQCC-J32		5.5 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm		.000055 ms		1048576 bit	4.5 V						NOR TYPE	.000005 Amp	13.97 mm		55 ns	5	YES
AM29F010B-55JI	Intel	FLASH		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6			20	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES			QUAD	R-PQCC-J32		5.5 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm		.000055 ms		1048576 bit	4.5 V						NOR TYPE	.000005 Amp	13.97 mm		55 ns	5	YES
EPCS16SI16N	Intel	CONFIGURATION MEMORY	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3.3			8	SMALL OUTLINE						70 Cel	3-STATE	2MX8	2M	0 Cel					DUAL	R-PDSO-G16		3.6 V		100000 Write/Erase Cycles	25 MHz					16777216 bit	2.7 V							.00005 Amp
TE28F128J3D-75	Intel	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	TIN LEAD	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified			134217728 bit	2.7 V		4/8	e0			NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	2.7	NO
EPCS1SI8	Intel	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	131072 words	3.3		3.3	1	SMALL OUTLINE			Flash Memories			85 Cel	3-STATE	128KX8	128K	-40 Cel			TIN LEAD		DUAL	R-PDSO-G8	3	3.6 V		100000 Write/Erase Cycles	40 MHz		Not Qualified			1048576 bit	2.7 V			e0				.00005 Amp
EPC4QC100N	Intel	EEPROM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		90 mA	4194304 words	3.3		3.3	1	FLATPACK			Flash Memories			70 Cel	3-STATE	4MX1	4M	0 Cel			MATTE TIN		QUAD	R-PQFP-G100	3	3.6 V		100000 Write/Erase Cycles	66.7 MHz		Not Qualified			4194304 bit	3 V			e3			NOR TYPE	.00015 Amp
EPC4QC100	Intel	EEPROM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		90 mA	4194304 words	3.3		3.3	1	FLATPACK	QFP100,.7X.9		Flash Memories		.65 mm	70 Cel	3-STATE	4MX1	4M	0 Cel			TIN LEAD		QUAD	R-PQFP-G100	3	3.6 V	3.4 mm	100000 Write/Erase Cycles	66.7 MHz	14 mm	Not Qualified			4194304 bit	3 V			e0				.00015 Amp	20 mm
EPC16UI88AA	Intel	CONFIGURATION MEMORY	INDUSTRIAL	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		90 mA	16777216 words	3.3		3.3	1	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel					BOTTOM	R-PBGA-B88		3.6 V	1.4 mm	100000 Write/Erase Cycles	66.7 MHz	8 mm	Not Qualified			16777216 bit	3 V							.00015 Amp	11 mm
EPCQ16SI8N	Intel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	16777216 words	3.3			1	SMALL OUTLINE	SOP8,2			20	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	133 MHz	3.9 mm		8 ms		16777216 bit	2.7 V			e4	40	260	NOR TYPE	.0001 Amp	4.9 mm			3.3
N28F512-200	Intel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.55 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified			524288 bit	4.5 V			e0			NOR TYPE	.0001 Amp	13.97 mm		200 ns	12	NO
EPC16QI100N	Intel	EEPROM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		90 mA	16777216 words	3.3		3.3	1	FLATPACK	QFP100,.7X.9		Flash Memories		.65 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel			MATTE TIN		QUAD	R-PQFP-G100	3	3.6 V	2.15 mm	100000 Write/Erase Cycles	66.7 MHz	14 mm	Not Qualified			16777216 bit	3 V			e3				.00015 Amp	20 mm
TE28F320B3BD70	Intel	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	NO	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN LEAD		DUAL	R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		70 ns	2.7	NO
EPC16QC100N	Intel	EEPROM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		90 mA	16777216 words	3.3		3.3	1	FLATPACK	QFP100,.7X.9		Flash Memories		.65 mm	70 Cel	3-STATE	16MX1	16M	0 Cel			MATTE TIN		QUAD	R-PQFP-G100	3	3.6 V	2.15 mm	100000 Write/Erase Cycles	66.7 MHz	14 mm	Not Qualified			16777216 bit	3 V			e3				.00015 Amp	20 mm
SSDPE2KX040T801	Intel	FLASH	COMMERCIAL			RECTANGULAR			1	CMOS							4398046511104 words				8							70 Cel		4TX8	4T	0 Cel																35184372088832 bit							TLC NAND TYPE
TE28F320C3TD70	Intel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	NO	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN LEAD		DUAL	R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		TOP	33554432 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	NO
EPCQ32SI8N	Intel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	33554432 words	3.3			1	SMALL OUTLINE	SOP8,2			20	1.27 mm	85 Cel	3-STATE	32MX1	32M	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	133 MHz	3.9 mm				33554432 bit	2.7 V			e4	40	260	NOR TYPE	.0001 Amp	4.9 mm			2.7
EPCQ64SI16N	Intel	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	67108864 words	3.3			1	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	64MX1	64M	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm		8 ms		67108864 bit	2.7 V			e4	20	260	NOR TYPE	.0001 Amp	10.3 mm			2.7
EPC8QI100N	Intel	EEPROM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		90 mA	8388608 words	3.3		3.3	1	FLATPACK	QFP100,.7X.9		Flash Memories		.65 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel			MATTE TIN		QUAD	R-PQFP-G100	3	3.6 V	2.15 mm	100000 Write/Erase Cycles	66.7 MHz	14 mm	Not Qualified			8388608 bit	3 V			e3				.00015 Amp	20 mm
JS28F256P30B95	Intel	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,64K	51 mA	16777216 words	1.8	NO	1.8,1.8/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES			DUAL	R-PDSO-G56		2 V	1.2 mm			14 mm	Not Qualified		BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm	YES	88 ns	1.8	NO
RC28F640J3D-75	Intel	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	64	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified			67108864 bit	2.7 V		4/8	e0			NOR TYPE	.00012 Amp	13 mm	YES	75 ns	2.7	NO
E28F008SA-120	Intel	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	50 mA	1048576 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	16	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		5.5 V	1.2 mm			10 mm	Not Qualified			8388608 bit	4.5 V	DEEP POWER-DOWN		e0			NOR TYPE	.0000012 Amp	18.4 mm		120 ns	12	NO
E28F016SA-100	Intel	FLASH	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	1048576 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	32	YES		YES	DUAL	R-PDSO-G56		5.5 V	1.2 mm			14 mm	Not Qualified			16777216 bit	4.5 V	ALSO CAN BE CONFIGURED AS 1M X 16	128/256				NOR TYPE	.000005 Amp	18.4 mm		100 ns	12	NO
TP28F010-120	Intel	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel		YES	TIN LEAD		DUAL	R-PDIP-T32		5.5 V	4.83 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified			1048576 bit	4.5 V			e0			NOR TYPE	.0001 Amp	41.91 mm		120 ns	12	NO
EPC8QI100	Intel	EEPROM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		90 mA	8388608 words	3.3		3.3	1	FLATPACK	QFP100,.7X.9		Flash Memories		.65 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel			TIN LEAD		QUAD	R-PQFP-G100	3	3.6 V	2.15 mm	100000 Write/Erase Cycles	66.7 MHz	14 mm	Not Qualified			8388608 bit	3 V			e0				.00015 Amp	20 mm
EPCQ128SI16N	Intel	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	134217728 words	3.3		3/3.3	1	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel	3-STATE	128MX1	128M	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	8 ms		134217728 bit	2.7 V			e4	40	260	NOR TYPE	.0001 Amp	10.3 mm			3.3
JS28F128J3D-75	Intel	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified			134217728 bit	2.7 V		4/8	e3	40	260	NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	2.7	NO
PC28F128P33B85	Intel	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	51 mA	8388608 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64		3.6 V	1.2 mm			8 mm	Not Qualified		BOTTOM	134217728 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e1			NOR TYPE	.000155 Amp	10 mm	YES	85 ns	3	NO
DA28F640J5-150	Intel	FLASH	OTHER	56	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	4194304 words	5	NO	3/3.3,5	16	SMALL OUTLINE, SHRINK PITCH	SOP56,.6,32	8	Flash Memories		.8 mm	85 Cel	3-STATE	4MX16	4M	-20 Cel	64	YES		YES	DUAL	R-PDSO-G56		5.5 V	1.9 mm			13.3 mm	Not Qualified			67108864 bit	4.5 V						NOR TYPE	.000125 Amp	23.7 mm	YES	150 ns	5	NO
TE28F320C3BC90	Intel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	NO	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN LEAD		DUAL	R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	NO
AM29F010B-45JF	Intel	FLASH		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6			20	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES			QUAD	R-PQCC-J32		5.25 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm		.000045 ms		1048576 bit	4.75 V						NOR TYPE	.000005 Amp	13.97 mm		45 ns	5	YES
DT28F160S5-70	Intel	FLASH	INDUSTRIAL	56	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	80 mA	2097152 words	5	NO	5	8	SMALL OUTLINE, SHRINK PITCH	SOP56,.6,32	8	Flash Memories		.8 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel	32	YES	TIN LEAD	YES	DUAL	R-PDSO-G56		5.25 V	1.9 mm			13.3 mm	Not Qualified			16777216 bit	4.75 V	CONFIGURABLE AS 1M X 16	16/32	e0			NOR TYPE	.00002 Amp	23.7 mm	YES	70 ns	5	NO
EPC16QC100	Intel	EEPROM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		90 mA	16777216 words	3.3		3.3	1	FLATPACK	QFP100,.7X.9		Flash Memories		.65 mm	70 Cel	3-STATE	16MX1	16M	0 Cel			TIN LEAD		QUAD	R-PQFP-G100	3	3.6 V	2.15 mm	100000 Write/Erase Cycles	66.7 MHz	14 mm	Not Qualified			16777216 bit	3 V			e0				.00015 Amp	20 mm
MS28F016SV-85	Intel	FLASH	MILITARY	56	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	MIL-PRF-38535 Class N	GULL WING	PARALLEL	ASYNCHRONOUS	64K	135 mA	2097152 words	5	NO	3.3/5	8	SMALL OUTLINE, SHRINK PITCH	SOP56,.6,32	16	Flash Memories		.8 mm	125 Cel	3-STATE	2MX8	2M	-55 Cel	32	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G56		5.5 V	1.9 mm			13.3 mm	Not Qualified			16777216 bit	3.15 V	USER-SELECTABLE 5V OR 12V VPP	128/256	e0			NOR TYPE	.00005 Amp	23.7 mm		85 ns	5	NO
P28F001BX-B120	Intel	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1,2,1	YES	TIN LEAD		DUAL	R-PDIP-T32		5.5 V	4.83 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified		BOTTOM	1048576 bit	4.5 V	DEEP POWER-DOWN; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000001 Amp	41.91 mm		120 ns	12	NO
TE28F256J3C-125	Intel	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	16777216 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		16MX16	16M	-40 Cel	256	YES	TIN LEAD	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified			268435456 bit	2.7 V		4/8	e0			NOR TYPE	.00012 Amp	18.4 mm	YES	125 ns	2.7	NO
TE28F800C3BD70	Intel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	524288 words	3	NO	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	8,15	YES	TIN LEAD		DUAL	R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	8388608 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP		e0			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	NO
AM29F010B-45EF	Intel	FLASH		32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20			10	.5 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES			DUAL	R-PDSO-G32		5.25 V	1.2 mm	1000000 Write/Erase Cycles		8 mm		.000045 ms		1048576 bit	4.75 V						NOR TYPE	.000005 Amp	18.4 mm		45 ns	5	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.