Intel Flash Memory 88

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
AM29F010B-45EI	Intel	FLASH		32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20			20	.5 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES			DUAL	R-PDSO-G32		5.25 V	1.2 mm	1000000 Write/Erase Cycles		8 mm		.000045 ms		1048576 bit	4.75 V						NOR TYPE	.000005 Amp	18.4 mm		45 ns	5	YES
DA28F640J5A-150	Intel	FLASH	OTHER	56	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	4194304 words	5	NO	3/3.3,5	16	SMALL OUTLINE, SHRINK PITCH	SOP56,.6,32	8	Flash Memories		.8 mm	85 Cel		4MX16	4M	-20 Cel	64	YES	TIN LEAD	YES	DUAL	R-PDSO-G56		5.5 V	1.9 mm			13.3 mm	Not Qualified			67108864 bit	4.5 V			e0			NOR TYPE	.000125 Amp	23.7 mm	YES	150 ns	5	NO
DD28F032SA-70	Intel	FLASH	COMMERCIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	64 mA	4194304 words	5	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	16	Flash Memories		.5 mm	70 Cel		4MX8	4M	0 Cel	64	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G56		5.5 V	1.2 mm			14 mm	Not Qualified			33554432 bit	3 V		128/256	e0			NOR TYPE	.00001 Amp	18.4 mm		70 ns	3	NO
E28F800B5B70	Intel	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	70 mA	1048576 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		1MX8	1M	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL	R-PDSO-G48		5.5 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	CONFG AS 512K X 16; USER SELECTABLE AS 5V OR 12V VPP; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000008 Amp	18.4 mm		80 ns	5	NO
EPC4QI100	Intel	EEPROM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		90 mA	4194304 words	3.3		3.3	1	FLATPACK	QFP100,.7X.9		Flash Memories		.65 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel			TIN LEAD		QUAD	R-PQFP-G100	3	3.6 V	3.4 mm	100000 Write/Erase Cycles	66.7 MHz	14 mm	Not Qualified			4194304 bit	3 V			e0				.00015 Amp	20 mm
GE28F160C3BD70	Intel	FLASH	INDUSTRIAL	46	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	1048576 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA46,6X8,30		Flash Memories		.75 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES	TIN LEAD		BOTTOM	R-PBGA-B46		3.6 V	1 mm			6.964 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	7.286 mm	YES	70 ns	3	NO
N28F001BX-B120	Intel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1,2,1	YES	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified		BOTTOM	1048576 bit	4.5 V	DEEP POWER-DOWN; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000001 Amp	13.97 mm		120 ns	12	NO
N28F256A-120	Intel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.55 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified			262144 bit	4.5 V	100000 ERASE/PROGRAM CYCLES		e0			NOR TYPE	.0001 Amp	13.97 mm		120 ns	12	NO
PA28F400B5B60	Intel	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	70 mA	524288 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		512KX8	512K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G44		5.5 V	2.95 mm	100000 Write/Erase Cycles		13.3 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	CONFG AS 256K X 16; USER SELECTABLE AS 5V OR 12V VPP; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000008 Amp	28.2 mm		70 ns	5	NO
PA28F400B5T80	Intel	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	70 mA	524288 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		512KX8	512K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G44		5.5 V	2.95 mm	100000 Write/Erase Cycles		13.3 mm	Not Qualified		TOP	4194304 bit	4.5 V	CONFG AS 256K X 16; USER SELECTABLE AS 5V OR 12V VPP; TOP BOOT BLOCK		e0			NOR TYPE	.000008 Amp	28.2 mm		80 ns	5	NO
PC28F256P33T85	Intel	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	51 mA	16777216 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64		3.6 V	1.2 mm			8 mm	Not Qualified		TOP	268435456 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e1			NOR TYPE	.000195 Amp	10 mm	YES	85 ns	3	NO
PC28F640P30B85	Intel	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	51 mA	4194304 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	4,63	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64		2 V	1.2 mm			10 mm	Not Qualified		BOTTOM	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e1			NOR TYPE	.000005 Amp	13 mm	YES	85 ns	1.8	NO
RC28F128K3C115	Intel	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	70 mA	8388608 words	3	NO	2.5/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES			BOTTOM	R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified			134217728 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e0	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000055 Amp	13 mm	YES	115 ns	3	NO
SSDSC2BX480G4	Intel	FLASH	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		480GX8	480G	0 Cel					SINGLE	R-XSMA-N22		5.25 V	7 mm			69.85 mm				4123168604160 bit	4.75 V	ALSO OPERATES @ 12V NOM, AVAILABLE 2.5INCH @ 100GB, 1.8INCH @ 800GB, LG-MAX			NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		100.45 mm			5
TE28F320C3BD90	Intel	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K,32K	55 mA	2097152 words		NO	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES			DUAL	R-PDSO-G48							Not Qualified		BOTTOM	33554432 bit							NOR TYPE	.000005 Amp		YES	90 ns		NO
AB28F400B5B80	Intel	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE					1.27 mm	125 Cel		512KX8	512K	-40 Cel					DUAL	R-PDSO-G44		5.5 V	2.95 mm			13.3 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	MIN 100K EXTENDED BLOCK ERASE CYCLES; CAN BE CONFG AS 125KX16; BOTTOM BOOT BLOCK					NOR TYPE		28.2 mm		80 ns	5
AM29F010B-55EF	Intel	FLASH		32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20			20	.5 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES			DUAL	R-PDSO-G32		5.5 V	1.2 mm	1000000 Write/Erase Cycles		8 mm		.000055 ms		1048576 bit	4.5 V						NOR TYPE	.000005 Amp	18.4 mm		55 ns	5	YES
DA28F320J5-120	Intel	FLASH	OTHER	56	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	2097152 words	5	NO	3/3.3,5	16	SMALL OUTLINE, SHRINK PITCH	SOP56,.6,32	8	Flash Memories		.8 mm	85 Cel	3-STATE	2MX16	2M	-20 Cel	32	YES	TIN LEAD	YES	DUAL	R-PDSO-G56		5.5 V	1.9 mm			13.3 mm	Not Qualified			33554432 bit	4.5 V	CONFIGURABLE AS 2M X 16; BLOCK ERASE	16/32	e0			NOR TYPE	.000125 Amp	23.7 mm	YES	120 ns	5	NO
DE28F800F3T95	Intel	FLASH	AUTOMOTIVE	56	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	60 mA	524288 words	3.3	NO	3.3	16	SMALL OUTLINE, SHRINK PITCH	SOP56,.6,32		Flash Memories		.8 mm	125 Cel		512KX16	512K	-40 Cel	8,15	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G56		3.6 V	1.9 mm			13.3 mm	Not Qualified		TOP	8388608 bit	3 V	TOP BOOT BLOCK	4	e0			NOR TYPE	.0001 Amp	23.7 mm		95 ns	3	NO
DT28F016SA-100	Intel	FLASH	INDUSTRIAL	56	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	40 mA	2097152 words	5	NO	3.3/5	8	SMALL OUTLINE, SHRINK PITCH	SOP56,.6,32	16	Flash Memories		.8 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel	32	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G56		5.5 V	1.9 mm			13.3 mm	Not Qualified			16777216 bit	2.97 V	DEEP POWER-DOWN; HARDWARE WRITE PROTECT	128/256	e0			NOR TYPE	.000005 Amp	23.7 mm		100 ns	12	NO
DT28F160S3-100	Intel	FLASH	INDUSTRIAL	56	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	80 mA	2097152 words	3.3	NO	3.3	8	SMALL OUTLINE, SHRINK PITCH	SOP56,.6,32	8	Flash Memories		.8 mm	85 Cel		2MX8	2M	-40 Cel	32	YES	TIN LEAD	YES	DUAL	R-PDSO-G56		3.6 V	1.9 mm			13.3 mm	Not Qualified			16777216 bit	3 V		16/32	e0			NOR TYPE	.000005 Amp	23.7 mm	YES	100 ns	2.7	NO
E28F002BC-T80	Intel	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	1,2,1,1	YES	TIN LEAD		DUAL	R-PDSO-G40		5.5 V	1.2 mm	100000 Write/Erase Cycles		10 mm	Not Qualified		TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.000008 Amp	18.4 mm		80 ns	12	NO
E28F002BX-T80	Intel	FLASH	COMMERCIAL	40	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	NO LEAD	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	1,2,1,1	YES			DUAL	R-PDSO-N40		5.25 V	1.2 mm	100000 Write/Erase Cycles		10 mm	Not Qualified		TOP	2097152 bit	4.75 V	BOTTOM BOOT BLOCK					NOR TYPE	.0000012 Amp	18.4 mm		80 ns	12	NO
EPCQ512ASI16N	Intel	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		60 mA	536870912 words	3.3			1	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	512MX1	512M	-40 Cel					DUAL	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	100 MHz	7.5 mm				536870912 bit	2.7 V						NOR TYPE	.0001 Amp	10.3 mm			2.7
JS28F160C3BD70	Intel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	1048576 words	3	NO	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES	MATTE TIN		DUAL	R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP		e3			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	NO
JS28F640J3D-75	Intel	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	4194304 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	64	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified			67108864 bit	2.7 V		4/8	e3	40	260	NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	2.7	NO
N28F001BX-T120	Intel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1,2,1	YES	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified		TOP	1048576 bit	4.5 V	DEEP POWER-DOWN; TOP BOOT BLOCK		e0			NOR TYPE	.000001 Amp	13.97 mm		120 ns	12	NO
P28F001BX-T150	Intel	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1,2,1	YES	TIN LEAD		DUAL	R-PDIP-T32		5.5 V	4.83 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified		TOP	1048576 bit	4.5 V	DEEP POWER-DOWN; TOP BOOT BLOCK		e0			NOR TYPE	.000001 Amp	41.91 mm		150 ns	12	NO
PA28F008SA-85	Intel	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	50 mA	1048576 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63		Flash Memories		1.27 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	16	YES	TIN LEAD	YES	DUAL	R-PDSO-G44		5.5 V	2.95 mm			13.3 mm	Not Qualified			8388608 bit	4.5 V	DEEP POWER-DOWN		e0			NOR TYPE	.0000012 Amp	28.2 mm		85 ns	12	NO
PA28F400BX-B60	Intel	FLASH	COMMERCIAL	40	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	NO LEAD	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	1,2,1,3	YES			DUAL	R-PDSO-N40		5.5 V	2.95 mm			13.3 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK					NOR TYPE	.0000012 Amp	28.2 mm		60 ns	12	NO
PC28F128J3D-75	Intel	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified			134217728 bit	2.7 V		4/8	e1	40	260	NOR TYPE	.00012 Amp	13 mm	YES	75 ns	2.7	NO
PC28F256P30B85	Intel	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	51 mA	16777216 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B64		2 V	1.2 mm			10 mm	Not Qualified		BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e1	40	260	NOR TYPE	.000005 Amp	13 mm	YES	88 ns	1.8	NO
PC48F4400P0TB00	Intel	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	51 mA	33554432 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64		3.6 V	1.2 mm			8 mm	Not Qualified		BOTTOM/TOP	536870912 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e1			NOR TYPE	.00039 Amp	10 mm	YES	85 ns	3	NO
SSDPE2KX080T801	Intel	MEMORY CIRCUIT
TE28F160S5-70	Intel	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	80 mA	2097152 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX8	2M	-40 Cel	32	YES		YES	DUAL	R-PDSO-G56		5.25 V	1.2 mm			14 mm	Not Qualified			16777216 bit	4.75 V	CONFIGURABLE AS 1M X 16	16/32	e0	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	5	NO
TE28F200B5T80	Intel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	70 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		256KX8	256K	-40 Cel	1,2,1,1	YES	TIN LEAD		DUAL	R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified		TOP	2097152 bit	4.5 V	CONFG AS 128K X 16; USER SELECTABLE AS 5V OR 12V VPP; TOP BOOT BLOCK		e0			NOR TYPE	.000008 Amp	18.4 mm		80 ns	5	NO
TE28F320B3TA110	Intel	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	NO	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN LEAD		DUAL	R-PDSO-G48		3.3 V	1.2 mm			12 mm	Not Qualified		TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		110 ns	2.7	NO
TE28F320C3BD70	Intel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	NO	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN LEAD		DUAL	R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	NO
TE28F320J3C-110	Intel	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	2097152 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	32	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified			33554432 bit	2.7 V		4/8	e0	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00012 Amp	18.4 mm	YES	110 ns	2.7	NO
TP28F512-120	Intel	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		YES	TIN LEAD		DUAL	R-PDIP-T32		5.5 V	4.83 mm	1000 Write/Erase Cycles		15.24 mm	Not Qualified			524288 bit	4.5 V	100000 ERASE/PROGRAM CYCLES		e0			NOR TYPE	.0001 Amp	41.91 mm		120 ns	12	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.