Onsemi Flash Memory 1,000

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
CAT28F512TRI-12T	Onsemi	FLASH	INDUSTRIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE	TSSOP32,.8,20	Flash Memories	10	.5 mm	85 Cel	YES	64KX8	64K	-40 Cel		YES		DUAL	R-PDSO-G32	1	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified		524288 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 10 YEARS				NOR TYPE	.00001 Amp	18.4 mm	120 ns	12	NO
CAT28F512TA-90	Onsemi	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories		.5 mm	105 Cel		64KX8	64K	-40 Cel		YES	TIN LEAD	DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified		524288 bit	4.5 V		e0			NOR TYPE	.00001 Amp	18.4 mm	90 ns	12	NO
CAT28F020NI-90T	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		256KX8	256K	-40 Cel		YES		QUAD	R-PQCC-J32	1	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified		2097152 bit	4.75 V				225	NOR TYPE	.0001 Amp	13.97 mm	90 ns	12	NO
CAT28F020T-20TE13	Onsemi	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		256KX8	256K	0 Cel			TIN LEAD	DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified		2097152 bit	4.5 V		e0			NOR TYPE		18.4 mm	200 ns	12
CAT28F512T14-90TE7	Onsemi	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		64KX8	64K	0 Cel			TIN LEAD	DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified		524288 bit	4.5 V		e0					12.4 mm	90 ns	12
CAT28F001TRI-15TE7	Onsemi	FLASH	INDUSTRIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		128KX8	128K	-40 Cel				DUAL	R-PDSO-G32			1.2 mm			8 mm	Not Qualified		1048576 bit		DEEP POWER-DOWN				NOR TYPE		18.4 mm	150 ns	12
CAT28F020N-20TE13	Onsemi	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			262144 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		256KX8	256K	0 Cel			TIN LEAD	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm	Not Qualified		2097152 bit	4.5 V		e0			NOR TYPE		13.97 mm	200 ns	12
CAT28F010TRI-12TE13	Onsemi	FLASH	INDUSTRIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		128KX8	128K	-40 Cel			TIN LEAD	DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified		1048576 bit	4.5 V		e0			NOR TYPE		18.4 mm	120 ns	12
CAT28F010TRA-90	Onsemi	FLASH	INDUSTRIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories		.5 mm	105 Cel	YES	128KX8	128K	-40 Cel		YES		DUAL	R-PDSO-G32	1	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified		1048576 bit	4.5 V					NOR TYPE	.0001 Amp	18.4 mm	90 ns	12	NO
CAT28F001GA-90B	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	105 Cel		128KX8	128K	-40 Cel	1,2,1	YES	Tin (Sn)	QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	BOTTOM	1048576 bit	4.5 V	BOTTOM BOOT BLOCK	e3			NOR TYPE	.000001 Amp	13.97 mm	90 ns	12	NO
CAT28F010NI-12T	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		128KX8	128K	-40 Cel		YES	TIN LEAD	QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified		1048576 bit	4.5 V		e0	30	235	NOR TYPE	.0001 Amp	13.97 mm	120 ns	12	NO
CAT28F001TRI-90TE7	Onsemi	FLASH	INDUSTRIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		128KX8	128K	-40 Cel				DUAL	R-PDSO-G32			1.2 mm			8 mm	Not Qualified		1048576 bit		DEEP POWER-DOWN				NOR TYPE		18.4 mm	90 ns	12
CAT28F001P-15T	Onsemi	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE			10	2.54 mm	70 Cel		128KX8	128K	0 Cel			TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm			15.24 mm	Not Qualified	TOP	1048576 bit	4.5 V	HARDWARE DATA PROTECTION; 100000 PROGRAM/ERASE CYCLES; 10 YEARS DATA RETENTION	e0			NOR TYPE		42.037 mm	150 ns	12
CAT28F512G-15TE7	Onsemi	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			65536 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		64KX8	64K	0 Cel			MATTE TIN	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm	Not Qualified		524288 bit	4.5 V		e3					13.97 mm	150 ns	12
CAT28F010N-90	Onsemi	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		128KX8	128K	0 Cel		YES		QUAD	R-PQCC-J32	1	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified		1048576 bit	4.5 V					NOR TYPE	.0001 Amp	13.97 mm	90 ns	12	NO
CAT28F010TA-90	Onsemi	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories		.5 mm	105 Cel		128KX8	128K	-40 Cel		YES		DUAL	R-PDSO-G32	1	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified		1048576 bit	4.5 V					NOR TYPE	.0001 Amp	18.4 mm	90 ns	12	NO
CAT28F020N-20	Onsemi	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			262144 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		256KX8	256K	0 Cel			TIN LEAD	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm	Not Qualified		2097152 bit	4.5 V		e0			NOR TYPE		13.97 mm	200 ns	12
CAT28F512H14I-90TE13	Onsemi	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		64KX8	64K	-40 Cel			MATTE TIN	DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified		524288 bit	4.5 V		e3					12.4 mm	90 ns	12
CAT28F001LA-90B	Onsemi	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	105 Cel		128KX8	128K	-40 Cel	1,2,1	YES	Tin (Sn)	DUAL	R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	BOTTOM	1048576 bit	4.5 V	BOTTOM BOOT BLOCK	e3			NOR TYPE	.000001 Amp	42.03 mm	90 ns	12	NO
CAT28F020TR-90T	Onsemi	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories		.5 mm	70 Cel	YES	256KX8	256K	0 Cel		YES		DUAL	R-PDSO-G32	1	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified		2097152 bit	4.75 V					NOR TYPE	.0001 Amp	18.4 mm	90 ns	12	NO
CAT28F010H-12TE13	Onsemi	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		128KX8	128K	0 Cel			MATTE TIN	DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified		1048576 bit	4.5 V		e3			NOR TYPE		18.4 mm	120 ns	12
CAT28F512H14-12TE13	Onsemi	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		64KX8	64K	0 Cel			MATTE TIN	DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified		524288 bit	4.5 V		e3					12.4 mm	120 ns	12
CAT28F020TR-20	Onsemi	FLASH	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE					70 Cel		256KX8	256K	0 Cel			TIN LEAD	DUAL	R-PDSO-G32	2A	5.5 V					Not Qualified		2097152 bit	4.5 V		e0			NOR TYPE			200 ns	12
LE25FU206MA	Onsemi	FLASH	COMMERCIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			262144 words	2.5			8	SMALL OUTLINE, LOW PROFILE				1.27 mm	70 Cel		256KX8	256K	0 Cel				DUAL	R-PDSO-G8		3.6 V	1.7 mm		30 MHz	4.4 mm			2097152 bit	2.3 V					NOR TYPE		5 mm		2.7
CAT28F020L12	Onsemi	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		256KX8	256K	0 Cel		YES	TIN	DUAL	R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified		2097152 bit	4.5 V		e3			NOR TYPE	.0001 Amp	42.03 mm	120 ns	12	NO
CAT28F001GI-12TE13	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		128KX8	128K	-40 Cel			MATTE TIN	QUAD	R-PQCC-J32	3		3.55 mm			11.43 mm	Not Qualified		1048576 bit		DEEP POWER-DOWN	e3			NOR TYPE		13.97 mm	120 ns	12
CAT28F010T-70T	Onsemi	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE			10	.5 mm	70 Cel		128KX8	128K	0 Cel			TIN LEAD	DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified		1048576 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 10 YEARS	e0			NOR TYPE		18.4 mm	70 ns	12
CAT28F512T14I-12TE13	Onsemi	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		64KX8	64K	-40 Cel			TIN LEAD	DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified		524288 bit	4.5 V		e0					12.4 mm	120 ns	12
CAT28F010NI-70T	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER			10	1.27 mm	85 Cel		128KX8	128K	-40 Cel			TIN LEAD	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm	Not Qualified		1048576 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 10 YEARS	e0			NOR TYPE		13.97 mm	70 ns	12
CAT28F512LA90	Onsemi	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	105 Cel		64KX8	64K	-40 Cel		YES		DUAL	R-PDIP-T32		5.5 V		100000 Write/Erase Cycles			Not Qualified		524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp		90 ns	12	NO
CAT28F001NI-90B	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		128KX8	128K	-40 Cel	1,2,1	YES		QUAD	R-PQCC-J32	1	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	BOTTOM	1048576 bit	4.5 V	BOTTOM BOOT BLOCK				NOR TYPE	.000001 Amp	13.97 mm	90 ns	12	NO
CAT28F020G90	Onsemi	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	70 Cel		256KX8	256K	0 Cel		YES	TIN	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified		2097152 bit	4.75 V		e3			NOR TYPE	.0001 Amp	13.97 mm	90 ns	12	NO
CAT28F001TA-70B	Onsemi	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	105 Cel		128KX8	128K	-40 Cel			TIN LEAD	DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified	BOTTOM	1048576 bit	4.5 V	BOTTOM BOOT BLOCK	e0			NOR TYPE		18.4 mm	70 ns	12
CAT28F010GI-12TE7	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER				1.27 mm	85 Cel		128KX8	128K	-40 Cel			MATTE TIN	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm	Not Qualified		1048576 bit	4.5 V		e3			NOR TYPE		13.97 mm	120 ns	12
CAT28F010GI-12T	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories		1.27 mm	85 Cel		128KX8	128K	-40 Cel		YES	TIN	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified		1048576 bit	4.5 V		e3		260	NOR TYPE	.0001 Amp	13.97 mm	120 ns	12	NO
CAT28F010P-12	Onsemi	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories		2.54 mm	70 Cel		128KX8	128K	0 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified		1048576 bit	4.5 V		e0	30	240	NOR TYPE	.0001 Amp	42.03 mm	120 ns	12	NO
CAT28F001TA-15BT	Onsemi	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE			10	.5 mm	105 Cel		128KX8	128K	-40 Cel			TIN LEAD	DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified	BOTTOM	1048576 bit	4.5 V	HARDWARE DATA PROTECTION; 100000 PROGRAM/ERASE CYCLES; 10 YEARS DATA RETENTION	e0			NOR TYPE		18.4 mm	150 ns	12
CAT28F001TA-12T	Onsemi	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories		.5 mm	105 Cel		128KX8	128K	-40 Cel	1,2,1	YES		DUAL	R-PDSO-G32	1	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	TOP	1048576 bit	4.5 V	TOP BOOT BLOCK				NOR TYPE	.000001 Amp	18.4 mm	120 ns	12	NO
CAT28F001TR-90TE13	Onsemi	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		128KX8	128K	0 Cel				DUAL	R-PDSO-G32			1.2 mm			8 mm	Not Qualified		1048576 bit		DEEP POWER-DOWN				NOR TYPE		18.4 mm	90 ns	12
CAT28F512PA-15	Onsemi	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6	Flash Memories	10	2.54 mm	105 Cel		64KX8	64K	-40 Cel		YES	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified		524288 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 10 YEARS	e0			NOR TYPE	.00001 Amp	42.03 mm	150 ns	12	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.