Onsemi Flash Memory 1,000

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
LE25U40CMC-AH	Onsemi	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		15 mA	524288 words	2.5		2.5/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm	Not Qualified		SPI		4194304 bit	2.3 V			e3	30	260	NOR TYPE	.00001 Amp	4.9 mm			2.7
LE25U20AMB-AH	Onsemi	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		15 mA	262144 words	2.5		2.5/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		256KX8	256K	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	30 MHz	3.9 mm	Not Qualified	15 ms	SPI		2097152 bit	2.3 V			e3	30	260	NOR TYPE	.00001 Amp	4.9 mm			2.7
CAT28F512L12	Onsemi	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	70 Cel		64KX8	64K	0 Cel		YES	TIN		DUAL		R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified				524288 bit	4.5 V			e3			NOR TYPE	.00001 Amp	42.03 mm		120 ns	12	NO
CAT28F001G-12BT	Onsemi	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel		128KX8	128K	0 Cel	1,2,1	YES	TIN		QUAD		R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			BOTTOM	1048576 bit	4.5 V	BOTTOM BOOT BLOCK		e3		260	NOR TYPE	.000001 Amp	13.97 mm		120 ns	12	NO
CAT28F512LI12	Onsemi	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	85 Cel		64KX8	64K	-40 Cel		YES	TIN		DUAL		R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified				524288 bit	4.5 V			e3		260	NOR TYPE	.00001 Amp	42.03 mm		120 ns	12	NO
CAT28F512H12	Onsemi	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel		64KX8	64K	0 Cel		YES	TIN		DUAL		R-PDSO-G32	2A	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified				524288 bit	4.5 V			e3			NOR TYPE	.00001 Amp	18.4 mm		120 ns	12	NO
CAT28F512HI90	Onsemi	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel		64KX8	64K	-40 Cel		YES	MATTE TIN		DUAL		R-PDSO-G32	2A	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified				524288 bit	4.5 V			e3			NOR TYPE	.00001 Amp	18.4 mm		90 ns	12	NO
CAT28F512GI12	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel		64KX8	64K	-40 Cel		YES	TIN		QUAD		R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified				524288 bit	4.5 V			e3			NOR TYPE	.00001 Amp	13.97 mm		120 ns	12	NO
CAT28F512G90	Onsemi	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel		64KX8	64K	0 Cel		YES	MATTE TIN		QUAD		R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified				524288 bit	4.5 V			e3			NOR TYPE	.00001 Amp	13.97 mm		90 ns	12	NO
CAT28F512GI90	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel		64KX8	64K	-40 Cel		YES	TIN		QUAD		R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified				524288 bit	4.5 V			e3			NOR TYPE	.00001 Amp	13.97 mm		90 ns	12	NO
CAT28F512P-12	Onsemi	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	70 Cel		64KX8	64K	0 Cel		YES	TIN LEAD		DUAL		R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified				524288 bit	4.5 V			e0			NOR TYPE	.00001 Amp	42.03 mm		120 ns	12	NO
LE25S20FD-AH	Onsemi	FLASH	INDUSTRIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		15 mA	262144 words	1.8		1.8	8	SMALL OUTLINE, VERY THIN PROFILE	TSOP8,.25		Flash Memories	20	1.27 mm	85 Cel		256KX8	256K	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	1.95 V	.85 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm	Not Qualified		SPI		2097152 bit	1.65 V			e3	30	260	NOR TYPE	.00001 Amp	4.9 mm			1.8
LE25S81AMDTWG	Onsemi	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		8.5 mA	1048576 words			1.8/2	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	90 Cel		1MX8	1M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	2	2.4 V	1.75 mm	100000 Write/Erase Cycles	70 MHz	3.9 mm	Not Qualified		SPI		8388608 bit	1.65 V			e3	30	260	NOR TYPE	.000015 Amp	4.9 mm			1.8
CAT28F512G12	Onsemi	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel		64KX8	64K	0 Cel		YES	Matte Tin (Sn)		QUAD		R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified				524288 bit	4.5 V			e3	40	260	NOR TYPE	.00001 Amp	13.97 mm		120 ns	12	NO
CAT28F512GI-90T	Onsemi	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel		64KX8	64K	-40 Cel		YES	TIN		QUAD		R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified				524288 bit	4.5 V			e3		260	NOR TYPE	.00001 Amp	13.97 mm		90 ns	12	NO
CAT28F512P-90	Onsemi	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	70 Cel		64KX8	64K	0 Cel		YES	TIN LEAD		DUAL		R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified				524288 bit	4.5 V			e0			NOR TYPE	.00001 Amp	42.03 mm		90 ns	12	NO
CAT28F001L-12T	Onsemi	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	70 Cel		128KX8	128K	0 Cel	1,2,1	YES	TIN		DUAL		R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified			TOP	1048576 bit	4.5 V	TOP BOOT BLOCK		e3		260	NOR TYPE	.000001 Amp	42.03 mm		120 ns	12	NO
CAT28F001LI-12T	Onsemi	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	85 Cel		128KX8	128K	-40 Cel	1,2,1	YES	TIN		DUAL		R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified			TOP	1048576 bit	4.5 V	TOP BOOT BLOCK		e3		260	NOR TYPE	.000001 Amp	42.03 mm		120 ns	12	NO
LE25U20AFD-AH	Onsemi	FLASH	INDUSTRIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		15 mA	262144 words	2.5		2.5/3.3	8	SMALL OUTLINE, VERY THIN PROFILE	TSOP8,.25		Flash Memories	20	1.27 mm	85 Cel		256KX8	256K	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	.85 mm	100000 Write/Erase Cycles	30 MHz	3.9 mm	Not Qualified		SPI		2097152 bit	2.3 V			e3	30	260	NOR TYPE	.00001 Amp	4.9 mm			3
CAT28F001L-90B	Onsemi	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	70 Cel		128KX8	128K	0 Cel	1,2,1	YES	TIN		DUAL		R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified			BOTTOM	1048576 bit	4.5 V	BOTTOM BOOT BLOCK		e3		260	NOR TYPE	.000001 Amp	42.03 mm		90 ns	12	NO
LE28FV1101T-15	Onsemi	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	3.3			16	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		64KX16	64K	0 Cel					DUAL		R-PDSO-G40		3.6 V	1.2 mm			10 mm	Not Qualified				1048576 bit	3 V								12.4 mm		150 ns	3.3
LE28FV4001CTS-20	Onsemi	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		512KX8	512K	0 Cel					DUAL		R-PDSO-G32		3.6 V	1.2 mm			8 mm	Not Qualified				4194304 bit	3 V								12.4 mm		200 ns	3.3
LE28FV4101H-70T	Onsemi	FLASH	OTHER	52	TFLGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.65 mm	85 Cel		256KX16	256K	-25 Cel					BOTTOM		S-PBGA-B52		3.6 V	1.2 mm			6 mm	Not Qualified				4194304 bit	3 V								6 mm		70 ns	3
LE28FV4101H-40T	Onsemi	FLASH	OTHER	52	TFLGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.65 mm	85 Cel		256KX16	256K	-25 Cel					BOTTOM		S-PBGA-B52		3.6 V	1.2 mm			6 mm	Not Qualified				4194304 bit	3 V								6 mm		40 ns	3
LE28FV4101T-50T	Onsemi	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	85 Cel		256KX16	256K	-25 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified				4194304 bit	3 V								18.4 mm		50 ns	3
LE28C1001M-90	Onsemi	FLASH	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		50 mA	131072 words	5	YES	5	8	SMALL OUTLINE	SOP32,.55		EEPROMs		1.27 mm	70 Cel		128KX8	128K	0 Cel		NO			DUAL		R-PDSO-G32		5.5 V	3.1 mm	1000 Write/Erase Cycles		11.2 mm	Not Qualified	10 ms			1048576 bit	4.5 V		128					.00002 Amp	20.7 mm		90 ns	5	YES
LE28DW8102T-90	Onsemi	FLASH	OTHER	48	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		32K	60 mA	524288 words	3	YES	3	16	SMALL OUTLINE, THIN PROFILE	TSOP48(UNSPEC)		Flash Memories			80 Cel		512KX16	512K	-40 Cel	16	NO			DUAL		R-PDSO-G48							Not Qualified				8388608 bit							NOR TYPE	.00004 Amp			90 ns		YES
LE28CV1001M-15	Onsemi	FLASH	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		15 mA	131072 words	3.3	YES	3.3	8	SMALL OUTLINE	SOP32,.55		EEPROMs		1.27 mm	70 Cel		128KX8	128K	0 Cel		NO			DUAL		R-PDSO-G32		3.6 V	3.1 mm	1000 Write/Erase Cycles		11.2 mm	Not Qualified	10 ms			1048576 bit	3 V		128					.00002 Amp	20.7 mm		150 ns	3.3	YES
LE28F1101T-45	Onsemi	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	5			16	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		64KX16	64K	0 Cel					DUAL		R-PDSO-G40		5.5 V	1.2 mm			10 mm	Not Qualified				1048576 bit	4.5 V								12.4 mm		45 ns	5
LE28FW4203T-70BE	Onsemi	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	35 mA	262144 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48(UNSPEC)	8	Flash Memories			85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL		R-PDSO-G48		3.6 V					Not Qualified			BOTTOM	4194304 bit	2.7 V	IT ALSO OPERATES AT 0 TO 70 DEG CENTIGRADE OPERATING TEMPERATURE (ERASE / PROGRAM OPERATION)					NOR TYPE	.00001 Amp		YES	70 ns	2.7	YES
LE28F4001T-15	Onsemi	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	256	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20		Flash Memories		.5 mm	70 Cel		512KX8	512K	0 Cel	2K	NO			DUAL		R-PDSO-G40		5.5 V	1.23 mm	10000 Write/Erase Cycles		10 mm	Not Qualified				4194304 bit	4.5 V						NOR TYPE	.00002 Amp	12.4 mm		150 ns	5	YES
LE28FV4001M-20	Onsemi	FLASH	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		256	25 mA	524288 words	3.3	YES	3.3	8	SMALL OUTLINE	SOP32,.55		Flash Memories	10	1.27 mm	70 Cel		512KX8	512K	0 Cel	2K	NO			DUAL		R-PDSO-G32				10000 Write/Erase Cycles			Not Qualified				4194304 bit							NOR TYPE	.00002 Amp			200 ns		YES
LE28FU4101H-10T	Onsemi	FLASH	OTHER	52	TFLGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			262144 words	2.7			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.65 mm	85 Cel		256KX16	256K	-25 Cel					BOTTOM		S-PBGA-B52		3.6 V	1.2 mm			6 mm	Not Qualified				4194304 bit	2.3 V								6 mm		100 ns	2.7
LE28FW4101H-70T	Onsemi	FLASH	OTHER	52	TFLGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			262144 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.65 mm	85 Cel		256KX16	256K	-25 Cel					BOTTOM		S-PBGA-B52		3.6 V	1.2 mm			6 mm	Not Qualified				4194304 bit	2.7 V								6 mm		70 ns	2.7
LE28BW168T-80	Onsemi
LE28BW168T-90	Onsemi
LE28FV4001T-20	Onsemi	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		256	25 mA	524288 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20		Flash Memories	10	.5 mm	70 Cel		512KX8	512K	0 Cel	2K	NO			DUAL		R-PDSO-G40				10000 Write/Erase Cycles			Not Qualified				4194304 bit							NOR TYPE	.00002 Amp			200 ns		YES
LE28FW4101H-45T	Onsemi	FLASH	OTHER	52	TFLGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			262144 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.65 mm	85 Cel		256KX16	256K	-25 Cel					BOTTOM		S-PBGA-B52		3.6 V	1.2 mm			6 mm	Not Qualified				4194304 bit	2.7 V								6 mm		45 ns	2.7
LE28F4001T-20	Onsemi	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	256	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20		Flash Memories		.5 mm	70 Cel		512KX8	512K	0 Cel	2K	NO			DUAL		R-PDSO-G40		5.5 V	1.23 mm	10000 Write/Erase Cycles		10 mm	Not Qualified				4194304 bit	4.5 V						NOR TYPE	.00002 Amp	12.4 mm		200 ns	5	YES
LE28FV4001T-25	Onsemi	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		256	25 mA	524288 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20		Flash Memories	10	.5 mm	70 Cel		512KX8	512K	0 Cel	2K	NO			DUAL		R-PDSO-G40				10000 Write/Erase Cycles			Not Qualified				4194304 bit							NOR TYPE	.00002 Amp			250 ns		YES
LE28FU4101T-10T	Onsemi	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	2.7			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	85 Cel		256KX16	256K	-25 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified				4194304 bit	2.3 V								18.4 mm		100 ns	2.7
LE28FV4001R-25	Onsemi	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		256	25 mA	524288 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20		Flash Memories	10	.5 mm	70 Cel	YES	512KX8	512K	0 Cel	2K	NO			DUAL		R-PDSO-G40				10000 Write/Erase Cycles			Not Qualified				4194304 bit							NOR TYPE	.00002 Amp			250 ns		YES
LE28C1001M-12	Onsemi	FLASH	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		50 mA	131072 words	5	YES	5	8	SMALL OUTLINE	SOP32,.55		EEPROMs		1.27 mm	70 Cel		128KX8	128K	0 Cel		NO			DUAL		R-PDSO-G32		5.5 V	3.1 mm	1000 Write/Erase Cycles		11.2 mm	Not Qualified	10 ms			1048576 bit	4.5 V		128					.00002 Amp	20.7 mm		120 ns	5	YES
LE28F1101T-40	Onsemi	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	5			16	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		64KX16	64K	0 Cel					DUAL		R-PDSO-G40		5.5 V	1.2 mm			10 mm	Not Qualified				1048576 bit	4.5 V								12.4 mm		40 ns	5
LE28C1001T-90	Onsemi	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		50 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		EEPROMs		.5 mm	70 Cel		128KX8	128K	0 Cel		NO			DUAL		R-PDSO-G32		5.5 V	1.2 mm	1000 Write/Erase Cycles		8 mm	Not Qualified	10 ms			1048576 bit	4.5 V		128					.00002 Amp	18.4 mm		90 ns	5	YES
LE28F4001M-20	Onsemi	FLASH	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	256	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE	SOP32,.55		Flash Memories		1.27 mm	70 Cel		512KX8	512K	0 Cel	2K	NO			DUAL		R-PDSO-G32		5.5 V	3.1 mm	10000 Write/Erase Cycles		11.2 mm	Not Qualified				4194304 bit	4.5 V						NOR TYPE	.00002 Amp	20.7 mm		200 ns	5	YES
LE28FV4001R-20	Onsemi	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		256	25 mA	524288 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20		Flash Memories	10	.5 mm	70 Cel	YES	512KX8	512K	0 Cel	2K	NO			DUAL		R-PDSO-G40				10000 Write/Erase Cycles			Not Qualified				4194304 bit							NOR TYPE	.00002 Amp			200 ns		YES
LE28DW1621T-80T	Onsemi	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	70 Cel		1MX16	1M	0 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified				16777216 bit	2.7 V	BANK 1 IS ORGANIZED AS 256K X 16 AND BANK 2 IS ORGANIZED AS 768K X 16							18.4 mm		80 ns	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.