Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Sector Size (Words) | Maximum Supply Current | No. of Words | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Toggle Bit | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | No. of Sectors/Size | Command User Interface | Terminal Finish | Ready or Busy | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Maximum Write Cycle Time (tWC) | Serial Bus Type | Boot Block | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | Page Size (words) | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Type | Maximum Standby Current | Length | Common Flash Interface | Maximum Access Time | Programming Voltage (V) | Data Polling |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Onsemi |
FLASH |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16K,8K,32K,64K |
35 mA |
262144 words |
3 |
YES |
3/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48(UNSPEC) |
8 |
Flash Memories |
85 Cel |
256KX16 |
256K |
-40 Cel |
1,2,1,7 |
YES |
YES |
DUAL |
R-PDSO-G48 |
3.6 V |
Not Qualified |
TOP |
4194304 bit |
2.7 V |
IT ALSO OPERATES AT 0 TO 70 DEG CENTIGRADE OPERATING TEMPERATURE (ERASE / PROGRAM OPERATION) |
NOR TYPE |
.00001 Amp |
YES |
70 ns |
2.7 |
YES |
||||||||||||||||||||||||
Onsemi |
FLASH |
COMMERCIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
2097152 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
8 |
.5 mm |
70 Cel |
2MX16 |
2M |
0 Cel |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
33554432 bit |
2.7 V |
2 BANKS ORGANIZED AS 1024K X 16 EACH |
18.4 mm |
80 ns |
3 |
||||||||||||||||||||||||||||||||||
Onsemi |
FLASH |
COMMERCIAL |
40 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
65536 words |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
70 Cel |
64KX16 |
64K |
0 Cel |
DUAL |
R-PDSO-G40 |
5.5 V |
1.2 mm |
10 mm |
Not Qualified |
1048576 bit |
4.5 V |
12.4 mm |
55 ns |
5 |
||||||||||||||||||||||||||||||||||||
Onsemi |
FLASH |
COMMERCIAL |
40 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
65536 words |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
70 Cel |
64KX16 |
64K |
0 Cel |
DUAL |
R-PDSO-G40 |
3.6 V |
1.2 mm |
10 mm |
Not Qualified |
1048576 bit |
3 V |
12.4 mm |
90 ns |
3.3 |
||||||||||||||||||||||||||||||||||||
Onsemi |
FLASH |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
131072 words |
5 |
YES |
5 |
8 |
SMALL OUTLINE |
SOP32,.55 |
EEPROMs |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
NO |
DUAL |
R-PDSO-G32 |
5.5 V |
3.1 mm |
1000 Write/Erase Cycles |
11.2 mm |
Not Qualified |
10 ms |
1048576 bit |
4.5 V |
128 |
.00002 Amp |
20.7 mm |
150 ns |
5 |
YES |
|||||||||||||||||||||||||
Onsemi |
FLASH |
OTHER |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
262144 words |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
8 |
.5 mm |
85 Cel |
256KX16 |
256K |
-25 Cel |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
4194304 bit |
3 V |
18.4 mm |
70 ns |
3 |
|||||||||||||||||||||||||||||||||||
Onsemi |
FLASH |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
15 mA |
131072 words |
3.3 |
YES |
3.3 |
8 |
SMALL OUTLINE |
SOP32,.55 |
EEPROMs |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
NO |
DUAL |
R-PDSO-G32 |
3.6 V |
3.1 mm |
1000 Write/Erase Cycles |
11.2 mm |
Not Qualified |
10 ms |
1048576 bit |
3 V |
128 |
.00002 Amp |
20.7 mm |
120 ns |
3.3 |
YES |
|||||||||||||||||||||||||
Onsemi |
FLASH |
COMMERCIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
8 |
.5 mm |
70 Cel |
512KX16 |
512K |
0 Cel |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
8388608 bit |
2.7 V |
BANK 1 IS ORGANIZED AS 384K X 16 AND BANK 2 IS ORGANIZED AS 128K X 16 |
18.4 mm |
80 ns |
3 |
||||||||||||||||||||||||||||||||||
Onsemi |
FLASH |
OTHER |
52 |
TFLGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BUTT |
PARALLEL |
ASYNCHRONOUS |
262144 words |
3.3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
8 |
.65 mm |
85 Cel |
256KX16 |
256K |
-25 Cel |
BOTTOM |
S-PBGA-B52 |
3.6 V |
1.2 mm |
6 mm |
Not Qualified |
4194304 bit |
3 V |
6 mm |
50 ns |
3 |
|||||||||||||||||||||||||||||||||||
Onsemi |
FLASH |
COMMERCIAL |
40 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
65536 words |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
70 Cel |
64KX16 |
64K |
0 Cel |
DUAL |
R-PDSO-G40 |
5.5 V |
1.2 mm |
10 mm |
Not Qualified |
1048576 bit |
4.5 V |
12.4 mm |
70 ns |
5 |
||||||||||||||||||||||||||||||||||||
Onsemi |
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Onsemi |
FLASH |
COMMERCIAL |
40 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
256 |
40 mA |
524288 words |
5 |
YES |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP40,.56,20 |
Flash Memories |
.5 mm |
70 Cel |
YES |
512KX8 |
512K |
0 Cel |
2K |
NO |
DUAL |
R-PDSO-G40 |
5.5 V |
1.23 mm |
10000 Write/Erase Cycles |
10 mm |
Not Qualified |
4194304 bit |
4.5 V |
NOR TYPE |
.00002 Amp |
12.4 mm |
150 ns |
5 |
YES |
|||||||||||||||||||||||
Onsemi |
FLASH |
OTHER |
52 |
TFLGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BUTT |
PARALLEL |
ASYNCHRONOUS |
262144 words |
2.7 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
8 |
.65 mm |
85 Cel |
256KX16 |
256K |
-25 Cel |
BOTTOM |
S-PBGA-B52 |
3.6 V |
1.2 mm |
6 mm |
Not Qualified |
4194304 bit |
2.3 V |
6 mm |
85 ns |
2.7 |
|||||||||||||||||||||||||||||||||||
Onsemi |
FLASH |
COMMERCIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
131072 words |
5 |
YES |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.8,20 |
EEPROMs |
.5 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
NO |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
1000 Write/Erase Cycles |
8 mm |
Not Qualified |
10 ms |
1048576 bit |
4.5 V |
128 |
.00002 Amp |
18.4 mm |
120 ns |
5 |
YES |
|||||||||||||||||||||||||
Onsemi |
FLASH |
OTHER |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
262144 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
8 |
.5 mm |
85 Cel |
256KX16 |
256K |
-25 Cel |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
4194304 bit |
2.7 V |
18.4 mm |
70 ns |
2.7 |
|||||||||||||||||||||||||||||||||||
Onsemi |
FLASH |
OTHER |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
262144 words |
2.7 |
16 |
SMALL OUTLINE, THIN PROFILE |
8 |
.5 mm |
85 Cel |
256KX16 |
256K |
-25 Cel |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
4194304 bit |
2.3 V |
18.4 mm |
85 ns |
2.7 |
|||||||||||||||||||||||||||||||||||
Onsemi |
FLASH |
COMMERCIAL |
40 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
256 |
40 mA |
524288 words |
5 |
YES |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP40,.56,20 |
Flash Memories |
.5 mm |
70 Cel |
YES |
512KX8 |
512K |
0 Cel |
2K |
NO |
DUAL |
R-PDSO-G40 |
5.5 V |
1.23 mm |
10000 Write/Erase Cycles |
10 mm |
Not Qualified |
4194304 bit |
4.5 V |
NOR TYPE |
.00002 Amp |
12.4 mm |
200 ns |
5 |
YES |
|||||||||||||||||||||||
Onsemi |
FLASH |
COMMERCIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
15 mA |
131072 words |
3.3 |
YES |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.8,20 |
EEPROMs |
.5 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
NO |
DUAL |
R-PDSO-G32 |
3.6 V |
1.2 mm |
1000 Write/Erase Cycles |
8 mm |
Not Qualified |
10 ms |
1048576 bit |
3 V |
128 |
.00002 Amp |
18.4 mm |
150 ns |
3.3 |
YES |
|||||||||||||||||||||||||
Onsemi |
FLASH |
COMMERCIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
2097152 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.4 mm |
70 Cel |
2MX16 |
2M |
0 Cel |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
10 mm |
Not Qualified |
33554432 bit |
2.7 V |
2 BANKS ORGANIZED AS 1024K X 16 EACH |
12.4 mm |
80 ns |
3 |
|||||||||||||||||||||||||||||||||||
Onsemi |
FLASH |
INDUSTRIAL |
48 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
16K,8K,32K,64K |
35 mA |
262144 words |
3 |
YES |
3/3.3 |
16 |
GRID ARRAY |
BGA48(UNSPEC) |
8 |
Flash Memories |
85 Cel |
256KX16 |
256K |
-40 Cel |
1,2,1,7 |
YES |
YES |
BOTTOM |
R-PBGA-B48 |
3.6 V |
Not Qualified |
TOP |
4194304 bit |
2.7 V |
IT ALSO OPERATES AT 0 TO 70 DEG CENTIGRADE OPERATING TEMPERATURE (ERASE / PROGRAM OPERATION) |
NOR TYPE |
.00001 Amp |
YES |
70 ns |
2.7 |
YES |
||||||||||||||||||||||||
Onsemi |
FLASH |
COMMERCIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
4194304 bit |
4.5 V |
12.4 mm |
120 ns |
5 |
||||||||||||||||||||||||||||||||||||
Onsemi |
FLASH |
OTHER |
52 |
TFLGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BUTT |
PARALLEL |
ASYNCHRONOUS |
262144 words |
3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
8 |
.65 mm |
85 Cel |
256KX16 |
256K |
-25 Cel |
BOTTOM |
S-PBGA-B52 |
3.6 V |
1.2 mm |
6 mm |
Not Qualified |
4194304 bit |
2.7 V |
6 mm |
55 ns |
2.7 |
|||||||||||||||||||||||||||||||||||
Onsemi |
FLASH |
COMMERCIAL |
40 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
65536 words |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
70 Cel |
64KX16 |
64K |
0 Cel |
DUAL |
R-PDSO-G40 |
3.6 V |
1.2 mm |
10 mm |
Not Qualified |
1048576 bit |
3 V |
12.4 mm |
70 ns |
3.3 |
||||||||||||||||||||||||||||||||||||
Onsemi |
FLASH |
OTHER |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
262144 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
8 |
.5 mm |
85 Cel |
256KX16 |
256K |
-25 Cel |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
4194304 bit |
2.7 V |
18.4 mm |
55 ns |
2.7 |
|||||||||||||||||||||||||||||||||||
Onsemi |
FLASH |
OTHER |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
262144 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
8 |
.5 mm |
85 Cel |
256KX16 |
256K |
-25 Cel |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
4194304 bit |
2.7 V |
18.4 mm |
45 ns |
2.7 |
|||||||||||||||||||||||||||||||||||
Onsemi |
FLASH |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
256 |
40 mA |
524288 words |
5 |
YES |
5 |
8 |
SMALL OUTLINE |
SOP32,.55 |
Flash Memories |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
2K |
NO |
DUAL |
R-PDSO-G32 |
5.5 V |
3.1 mm |
10000 Write/Erase Cycles |
11.2 mm |
Not Qualified |
4194304 bit |
4.5 V |
NOR TYPE |
.00002 Amp |
20.7 mm |
150 ns |
5 |
YES |
||||||||||||||||||||||||
Onsemi |
FLASH |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
256 |
25 mA |
524288 words |
3.3 |
YES |
3.3 |
8 |
SMALL OUTLINE |
SOP32,.55 |
Flash Memories |
10 |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
2K |
NO |
DUAL |
R-PDSO-G32 |
10000 Write/Erase Cycles |
Not Qualified |
4194304 bit |
NOR TYPE |
.00002 Amp |
250 ns |
YES |
|||||||||||||||||||||||||||||||
Onsemi |
FLASH |
COMMERCIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
15 mA |
131072 words |
3.3 |
YES |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.8,20 |
EEPROMs |
.5 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
NO |
DUAL |
R-PDSO-G32 |
3.6 V |
1.2 mm |
1000 Write/Erase Cycles |
8 mm |
Not Qualified |
10 ms |
1048576 bit |
3 V |
128 |
.00002 Amp |
18.4 mm |
120 ns |
3.3 |
YES |
|||||||||||||||||||||||||
Onsemi |
FLASH |
INDUSTRIAL |
48 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
16K,8K,32K,64K |
35 mA |
262144 words |
3 |
YES |
3/3.3 |
16 |
GRID ARRAY |
BGA48(UNSPEC) |
8 |
Flash Memories |
85 Cel |
256KX16 |
256K |
-40 Cel |
1,2,1,7 |
YES |
YES |
BOTTOM |
R-PBGA-B48 |
3.6 V |
Not Qualified |
BOTTOM |
4194304 bit |
2.7 V |
IT ALSO OPERATES AT 0 TO 70 DEG CENTIGRADE OPERATING TEMPERATURE (ERASE / PROGRAM OPERATION) |
NOR TYPE |
.00001 Amp |
YES |
70 ns |
2.7 |
YES |
||||||||||||||||||||||||
Onsemi |
FLASH |
COMMERCIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
131072 words |
5 |
YES |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.8,20 |
EEPROMs |
.5 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
NO |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
1000 Write/Erase Cycles |
8 mm |
Not Qualified |
10 ms |
1048576 bit |
4.5 V |
128 |
.00002 Amp |
18.4 mm |
150 ns |
5 |
YES |
|||||||||||||||||||||||||
Onsemi |
FLASH |
COMMERCIAL |
32 |
TSOP1-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
262144 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
70 Cel |
256KX8 |
256K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
2A |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
2097152 bit |
4.5 V |
e0 |
NOR TYPE |
18.4 mm |
200 ns |
12 |
||||||||||||||||||||||||||||||||
Onsemi |
FLASH |
COMMERCIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
2A |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
NOR TYPE |
12.4 mm |
200 ns |
12 |
||||||||||||||||||||||||||||||||
Onsemi |
FLASH |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
3 |
3.55 mm |
11.43 mm |
Not Qualified |
1048576 bit |
DEEP POWER-DOWN |
e0 |
NOR TYPE |
13.97 mm |
120 ns |
12 |
|||||||||||||||||||||||||||||||||
|
Onsemi |
FLASH |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
30 mA |
262144 words |
5 |
NO |
5 |
8 |
SMALL OUTLINE |
TSSOP32,.8,20 |
Flash Memories |
.5 mm |
85 Cel |
YES |
256KX8 |
256K |
-40 Cel |
YES |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
100000 Write/Erase Cycles |
8 mm |
Not Qualified |
2097152 bit |
4.75 V |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
20 mm |
90 ns |
12 |
NO |
|||||||||||||||||||||
Onsemi |
FLASH |
INDUSTRIAL |
8 |
TSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
SERIAL |
15 mA |
524288 words |
2.5/3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP8,.25 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
512KX8 |
512K |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-G8 |
100000 Write/Erase Cycles |
30 MHz |
Not Qualified |
SPI |
4194304 bit |
NOR TYPE |
.00001 Amp |
|||||||||||||||||||||||||||||||||||
|
Onsemi |
FLASH |
TIN SILVER COPPER |
1 |
e1 |
30 |
260 |
1.8 |
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
Onsemi |
FLASH |
INDUSTRIAL |
32 |
TSOP1-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G32 |
2A |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
NOR TYPE |
18.4 mm |
120 ns |
12 |
|||||||||||||||||||||||||||||||
Onsemi |
FLASH |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
8K,4K,112K |
30 mA |
131072 words |
5 |
NO |
5 |
8 |
CHIP CARRIER |
LDCC32,.5X.6 |
Flash Memories |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
1,2,1 |
YES |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.55 mm |
100000 Write/Erase Cycles |
11.43 mm |
Not Qualified |
TOP |
1048576 bit |
4.5 V |
TOP BOOT BLOCK |
NOR TYPE |
.000001 Amp |
13.97 mm |
90 ns |
12 |
NO |
|||||||||||||||||||||
Onsemi |
FLASH |
COMMERCIAL |
32 |
TSOP1-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
30 mA |
131072 words |
5 |
NO |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.8,20 |
Flash Memories |
.5 mm |
70 Cel |
YES |
128KX8 |
128K |
0 Cel |
YES |
DUAL |
R-PDSO-G32 |
1 |
5.5 V |
1.2 mm |
100000 Write/Erase Cycles |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
NOR TYPE |
.0001 Amp |
18.4 mm |
120 ns |
12 |
NO |
||||||||||||||||||||||||
|
Onsemi |
FLASH |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
30 mA |
262144 words |
5 |
NO |
5 |
8 |
SMALL OUTLINE |
TSSOP32,.8,20 |
Flash Memories |
.5 mm |
105 Cel |
YES |
256KX8 |
256K |
-40 Cel |
YES |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
100000 Write/Erase Cycles |
8 mm |
Not Qualified |
2097152 bit |
4.5 V |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
20 mm |
120 ns |
12 |
NO |
|||||||||||||||||||||
Onsemi |
FLASH |
INDUSTRIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
8K,4K,112K |
30 mA |
131072 words |
5 |
NO |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.8,20 |
Flash Memories |
.5 mm |
105 Cel |
128KX8 |
128K |
-40 Cel |
1,2,1 |
YES |
DUAL |
R-PDSO-G32 |
1 |
5.5 V |
1.2 mm |
100000 Write/Erase Cycles |
8 mm |
Not Qualified |
BOTTOM |
1048576 bit |
4.5 V |
BOTTOM BOOT BLOCK |
NOR TYPE |
.000001 Amp |
18.4 mm |
90 ns |
12 |
NO |
|||||||||||||||||||||
|
Onsemi |
FLASH |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
30 mA |
262144 words |
5 |
NO |
5 |
8 |
SMALL OUTLINE |
TSSOP32,.8,20 |
Flash Memories |
.5 mm |
105 Cel |
YES |
256KX8 |
256K |
-40 Cel |
YES |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
100000 Write/Erase Cycles |
8 mm |
Not Qualified |
2097152 bit |
4.75 V |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
20 mm |
90 ns |
12 |
NO |
|||||||||||||||||||||
|
Onsemi |
FLASH |
INDUSTRIAL |
32 |
TSOP1-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G32 |
2A |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
NOR TYPE |
18.4 mm |
90 ns |
12 |
|||||||||||||||||||||||||||||||
|
Onsemi |
FLASH |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
3 |
3.55 mm |
11.43 mm |
Not Qualified |
1048576 bit |
DEEP POWER-DOWN |
e3 |
NOR TYPE |
13.97 mm |
90 ns |
12 |
||||||||||||||||||||||||||||||||
Onsemi |
FLASH |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
CHIP CARRIER |
10 |
1.27 mm |
105 Cel |
128KX8 |
128K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.55 mm |
11.43 mm |
Not Qualified |
1048576 bit |
4.5 V |
100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 10 YEARS |
e0 |
NOR TYPE |
13.97 mm |
70 ns |
12 |
||||||||||||||||||||||||||||||
|
Onsemi |
FLASH |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.55 mm |
11.43 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
NOR TYPE |
13.97 mm |
90 ns |
12 |
|||||||||||||||||||||||||||||||
Onsemi |
FLASH |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
8K,4K,112K |
30 mA |
131072 words |
5 |
NO |
5 |
8 |
CHIP CARRIER |
LDCC32,.5X.6 |
Flash Memories |
1.27 mm |
105 Cel |
128KX8 |
128K |
-40 Cel |
1,2,1 |
YES |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.55 mm |
100000 Write/Erase Cycles |
11.43 mm |
Not Qualified |
TOP |
1048576 bit |
4.5 V |
TOP BOOT BLOCK |
NOR TYPE |
.000001 Amp |
13.97 mm |
90 ns |
12 |
NO |
|||||||||||||||||||||
|
Onsemi |
FLASH |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
30 mA |
262144 words |
5 |
NO |
5 |
8 |
CHIP CARRIER |
LDCC32,.5X.6 |
Flash Memories |
1.27 mm |
105 Cel |
256KX8 |
256K |
-40 Cel |
YES |
QUAD |
R-PQCC-J32 |
5.5 V |
3.55 mm |
100000 Write/Erase Cycles |
11.43 mm |
Not Qualified |
2097152 bit |
4.75 V |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
13.97 mm |
90 ns |
12 |
NO |
Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.
Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.
There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.
Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.