STMicroelectronics Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M29R800B-150M6	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	1048576 words	3.3		YES	3/3.3	8	SMALL OUTLINE	SOP44,.63	16	Flash Memories		1.27 mm	85 Cel		3-STATE	1MX8	1M	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	3.6 V	2.62 mm		13.3 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V			e0			NOR TYPE	.000005 Amp	28.2 mm		150 ns	3	YES
M29W800DT45M1E	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3		YES	3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel			512KX16	512K	0 Cel	1,2,1,15	YES			DUAL	R-PDSO-G44	3.6 V	2.8 mm		13.3 mm	Not Qualified	TOP	8388608 bit	3 V				NOT SPECIFIED	250	NOR TYPE	.0001 Amp	28.2 mm	YES	45 ns	3	YES
M29F100B-120XN6R	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5		YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	YES		128KX8	128K	-40 Cel	1,2,1,1	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	5.25 V	1.2 mm		12 mm	Not Qualified	BOTTOM	1048576 bit	4.75 V	CONFG AS 64K X 16; BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		120 ns	5	YES
M28F410-120N1TR	STMicroelectronics	FLASH	COMMERCIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5				8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel			512KX8	512K	0 Cel					DUAL	R-PDSO-G56	5.5 V	1.2 mm		14 mm	Not Qualified	TOP	4194304 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; ALSO CONFIGURABLE AS 256K X 16; BLOCK ERASE; TOP BOOT BLOCK					NOR TYPE		18.4 mm		120 ns	12
M59DR016D100ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	40 mA	1048576 words	1.8		YES	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories		.75 mm	85 Cel			1MX16	1M	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B48	2.2 V	1.35 mm		7 mm	Not Qualified	BOTTOM	16777216 bit	1.65 V		4	e1			NOR TYPE	.000005 Amp	12 mm	YES	100 ns	1.8	YES
M29F800DB90N6F	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5		YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			512KX16	512K	-40 Cel	1,2,1,15	YES	TIN/TIN BISMUTH	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e3/e6	NOT SPECIFIED	260	NOR TYPE	.00015 Amp	18.4 mm	YES	70 ns	5	YES
M29F400B-120M1	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5		YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		120 ns	5	YES
M29F016B70M6	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	2097152 words	5		YES	5	8	SMALL OUTLINE	SOP44,.63		Flash Memories		1.27 mm	85 Cel			2MX8	2M	-40 Cel	32	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm		13.3 mm	Not Qualified		16777216 bit	4.5 V			e0			NOR TYPE	.00015 Amp	28.2 mm		70 ns	5	YES
M29F200BT55M3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5		YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel			128KX16	128K	-40 Cel	1,2,1,3	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e3			NOR TYPE	.0001 Amp	28.2 mm		55 ns	5	YES
M28W800T120GB1T	STMicroelectronics	FLASH	COMMERCIAL	45	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	524288 words	3		NO	1.65/2.2,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA45,6X8,30		Flash Memories		.75 mm	70 Cel			512KX16	512K	0 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45	3.3 V	.835 mm		6.62 mm	Not Qualified	TOP	8388608 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	6.8 mm	YES	120 ns	2.7	NO
M29F040-150N5RTR	STMicroelectronics	FLASH	OTHER	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5		YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	20	.5 mm	85 Cel	YES	3-STATE	512KX8	512K	-20 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	4.5 V	100000 ERASE/PROGRAM CYCLES; 20 YEARS DATA RETENTION; BLOCK ERASE; BYTE PROGRAMMABLE		e0			NOR TYPE	.00005 Amp	18.4 mm		150 ns	5	YES
M50FW080N5TP	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	1048576 words	3.3		NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			1MX8	1M	-20 Cel	16	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified		8388608 bit	3 V			e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		11 ns	3	NO
M28W640ECT85N6S	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	4194304 words	3.3		NO	1.8/3.3,3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel			4MX16	4M	-40 Cel	8,127	YES	TIN LEAD		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	67108864 bit	3 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm	YES	85 ns	3	NO
M29F100B-120N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	65536 words	5		YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		3-STATE	64KX16	64K	0 Cel	1,2,1,1	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified	BOTTOM	1048576 bit	4.5 V	CONFG AS 64K X 16; BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		120 ns	5	YES
M28F411-90N3	STMicroelectronics	FLASH	AUTOMOTIVE	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5				8	SMALL OUTLINE, THIN PROFILE					.5 mm	125 Cel			512KX8	512K	-40 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	TOP	4194304 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; TOP BOOT BLOCK					NOR TYPE		18.4 mm		90 ns	12
M28W160ECB85ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	46	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3		NO	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA46,6X8,30		Flash Memories		.75 mm	85 Cel			1MX16	1M	-40 Cel	8,31	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B46	3.6 V	1.2 mm		6.37 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V			e1			NOR TYPE	.000005 Amp	6.39 mm	YES	85 ns	3	NO
M29F400T-55N3R	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5		YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel	YES		256KX16	256K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		55 ns	5	YES
M29F800AT55N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	5		YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G48			100000 Write/Erase Cycles		Not Qualified	TOP	8388608 bit				e0			NOR TYPE	.00015 Amp			55 ns		YES
M29W400B-150N6R	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	YES	3-STATE	256KX16	256K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	4194304 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.00005 Amp	18.4 mm		150 ns	2.7	YES
M28R400CT120ZB6	STMicroelectronics	FLASH	INDUSTRIAL	46	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	262144 words	1.8		NO	1.8/2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA46,6X8,30		Flash Memories		.75 mm	85 Cel			256KX16	256K	-40 Cel	8,7	YES	TIN LEAD		BOTTOM	R-PBGA-B46	2.2 V	1.2 mm		6.37 mm	Not Qualified	TOP	4194304 bit	1.65 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	6.39 mm	YES	120 ns	1.8	NO
M29W160DB70N1E	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3				16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	70 Cel			1MX16	1M	0 Cel			TIN/TIN BISMUTH		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	16777216 bit	3 V	BOTTOM BOOT BLOCK		e3/e6	NOT SPECIFIED	260	NOR TYPE		18.4 mm		70 ns	3
M29F102B-35K6	STMicroelectronics	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL		8K,4K,16K,32K	50 mA	65536 words	5		YES	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories		1.27 mm	85 Cel			64KX16	64K	-40 Cel	1,2,1,1	YES	TIN LEAD		QUAD	S-PQCC-J44					Not Qualified	BOTTOM	1048576 bit				e0			NOR TYPE	.0001 Amp			35 ns		YES
M28F1001-12F312	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5				8	IN-LINE, WINDOW					2.54 mm	125 Cel		3-STATE	128KX8	128K	-40 Cel					DUAL	R-GDIP-T32	5.5 V	5.72 mm		15.24 mm	Not Qualified		1048576 bit	4.5 V	100 ERASE/PROGRAM CYCLES					NOR TYPE		41.885 mm		120 ns	12
M28F411-60N1TR	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5				8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		3-STATE	512KX8	512K	0 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	TOP	4194304 bit	4.5 V	TOP BOOT BLOCK; DEEP POWER DOWN; 100K ERASE/PROGRAM CYCLES					NOR TYPE		18.4 mm		60 ns	12
M29W102BT50XN6T	STMicroelectronics	FLASH	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,4K,16K,32K	20 mA	65536 words	3.3		YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20		Flash Memories		.5 mm	85 Cel			64KX16	64K	-40 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G40					Not Qualified	TOP	1048576 bit				e0			NOR TYPE	.0001 Amp			50 ns		YES
M58WR032FB80ZB6F	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	45 mA	2097152 words	1.8		NO	1.8,1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel			2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B56	2 V	1 mm		7.7 mm	Not Qualified	BOTTOM	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e1			NOR TYPE	.000005 Amp	9 mm	YES	80 ns	1.8	NO
M29R008T-150N1	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words					8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		3-STATE	1MX8	1M	0 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified		8388608 bit	2.7 V						NOR TYPE		18.4 mm		150 ns	3
M28F512-90XB1TR	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			65536 words	5				8	IN-LINE					2.54 mm	70 Cel		3-STATE	64KX8	64K	0 Cel					DUAL	R-PDIP-T32	5.25 V	5.08 mm		15.24 mm	Not Qualified		524288 bit	4.75 V						NOR TYPE		41.91 mm		90 ns	12
M28F411-80YN1TR	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5				8	SMALL OUTLINE, THIN PROFILE				20	.5 mm	70 Cel			512KX8	512K	0 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	TOP	4194304 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; 20 YEARS DATA RETENTION; BOOT BLOCK					NOR TYPE		18.4 mm		80 ns	12
M29F800DT55N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5		YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.00015 Amp	18.4 mm	YES	55 ns	5	YES
M29F400T-70N5R	STMicroelectronics	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	262144 words	5		YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	YES		256KX16	256K	-20 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G48			100000 Write/Erase Cycles		Not Qualified	TOP	4194304 bit				e0			NOR TYPE	.0001 Amp			70 ns		YES
M29F002BNB90N3E	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5		YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	125 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M29F002BNT55K1	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5		YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel			256KX8	256K	0 Cel	1,2,1,3	YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	13.97 mm		55 ns	5	YES
M28V841-100N1	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	30 mA	1048576 words	3.3		NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		3-STATE	1MX8	1M	0 Cel	16	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified		8388608 bit	3 V			e0			NOR TYPE	.000005 Amp	18.4 mm		100 ns	12	NO
M28F420-90M1TR	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5				8	SMALL OUTLINE		16			1.27 mm	70 Cel			512KX8	512K	0 Cel					DUAL	R-PDSO-G44	5.5 V	2.62 mm		13.3 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK					NOR TYPE		28.2 mm		90 ns	12
M39208-12WNA6T	STMicroelectronics	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		20 mA	262144 words	3	EEPROM+FLASH		3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Other Memory ICs		.5 mm	85 Cel			256KX8	256K	-40 Cel			TIN LEAD		DUAL	R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified		2097152 bit	2.7 V	ALSO CONTAINS 64 KBIT EEPROM MEMORY		e0			NOR TYPE	.000002 Amp	18.4 mm		120 ns	2.7
M29W017D70N1	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3.3				8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel			2MX8	2M	0 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified		16777216 bit	3 V						NOR TYPE		18.4 mm		70 ns	3
M28W160BT100GB1T	STMicroelectronics	FLASH	COMMERCIAL	46	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3		NO	1.8/2.5,3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories		.75 mm	70 Cel			1MX16	1M	0 Cel	8,31	YES			BOTTOM	R-PBGA-B46	3.6 V	1 mm		6.37 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e0	NOT SPECIFIED	260	NOR TYPE	.000005 Amp	6.39 mm	YES	100 ns	3	NO
M28W160BT100ZB6	STMicroelectronics	FLASH	INDUSTRIAL	46	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3		NO	1.8/2.5,3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories		.75 mm	85 Cel			1MX16	1M	-40 Cel	8,31	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B46	3.6 V	1.2 mm		6.37 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	6.39 mm	YES	100 ns	3	NO
M29F040-90XP5	STMicroelectronics	FLASH	OTHER	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		64K	60 mA	524288 words	5		YES	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	85 Cel			512KX8	512K	-20 Cel	8	YES	TIN LEAD		DUAL	R-PDIP-T32			100000 Write/Erase Cycles		Not Qualified		4194304 bit				e0			NOR TYPE	.0001 Amp			90 ns		YES
M29F200T-120XM3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5				8	SMALL OUTLINE		16			1.27 mm	125 Cel			256KX8	256K	-40 Cel					DUAL	R-PDSO-G44	5.25 V	2.62 mm		13.3 mm	Not Qualified	TOP	2097152 bit	4.75 V						NOR TYPE		28.2 mm		120 ns	5
M29F400T-70N1RTR	STMicroelectronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5		YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel	YES	3-STATE	256KX16	256K	0 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified	TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M29W200BB90M6	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	3.3		YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel			128KX16	128K	-40 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	3.6 V	2.8 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	2097152 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		90 ns	2.7	YES
M28F221-80YN6TR	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5				8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			256KX8	256K	-40 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; BLOCK ERASE; BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		80 ns	12
M58BW016DT100T6T	STMicroelectronics	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3		NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	85 Cel			512KX32	512K	-40 Cel	8,31	YES	TIN LEAD		QUAD	R-PQFP-G80	3.6 V	3.4 mm		14 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	20 mm	YES	100 ns	3	NO
M29F010B70P6T	STMicroelectronics	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5				8	IN-LINE					2.54 mm	85 Cel			128KX8	128K	-40 Cel					DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified		1048576 bit	4.5 V						NOR TYPE		41.91 mm		70 ns	5
M29F010B90N1F	STMicroelectronics	FLASH	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	131072 words	5		YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel			128KX8	128K	0 Cel	8	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		1048576 bit	4.5 V			e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M29W640DT70ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	4194304 words	3.3		YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories		.8 mm	85 Cel			4MX16	4M	-40 Cel	8,127	YES	Tin/Lead (Sn63Pb37)	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm		7 mm	Not Qualified	TOP	67108864 bit	3 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	11 mm	YES	70 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.