STMicroelectronics Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M29F010B35XN6	STMicroelectronics	FLASH	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K	20 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel			128KX8	128K	-40 Cel	8	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G32			100000 Write/Erase Cycles		Not Qualified		1048576 bit				e0			NOR TYPE	.0001 Amp			35 ns		YES
M29F002BT120K1	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel			256KX8	256K	0 Cel	1,2,1,3	YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	13.97 mm		70 ns	5	YES
M28F256-10XC3	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	20	1.27 mm	125 Cel			32KX8	32K	-40 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32	5.25 V	3.56 mm	10000 Write/Erase Cycles	11.455 mm	Not Qualified		262144 bit	4.75 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES		e0			NOR TYPE	.0001 Amp	13.995 mm		100 ns	12	NO
M28F201-120K3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			262144 words	5			8	CHIP CARRIER					1.27 mm	125 Cel		3-STATE	256KX8	256K	-40 Cel					QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified		2097152 bit	4.5 V						NOR TYPE		13.995 mm		120 ns	12
M29DW640D90ZA1	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	70 Cel			4MX16	4M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	3.6 V	1.2 mm		7 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE		11 mm		90 ns	3
M29W017D90N6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	2097152 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			2MX8	2M	-40 Cel	32	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified		16777216 bit	2.7 V			e0			NOR TYPE	.0001 Amp	18.4 mm	YES	90 ns	3	YES
M58CR064Q85ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	30 mA	4194304 words	1.9	NO	1.8/2,1.8/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel			4MX16	4M	-40 Cel	8,127	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B56	2 V	1.2 mm		6.5 mm	Not Qualified	BOTTOM	67108864 bit	1.8 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e1			NOR TYPE	.000005 Amp	10 mm	YES	85 ns	1.8	NO
M28W160ECT70ZB1S	STMicroelectronics	FLASH	COMMERCIAL	46	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.75 mm	70 Cel			1MX16	1M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B46	3.6 V	1.2 mm		6.37 mm	Not Qualified	TOP	16777216 bit	2.7 V			e0			NOR TYPE		6.39 mm		70 ns	3
M28W430-150N3TR	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			8	SMALL OUTLINE, THIN PROFILE		16			.5 mm	125 Cel		3-STATE	512KX8	512K	-40 Cel					DUAL	R-PDSO-G48	3.3 V	1.2 mm		12 mm	Not Qualified	TOP	4194304 bit	2.7 V						NOR TYPE		18.4 mm		150 ns	12
M28W320ECT85ZB1E	STMicroelectronics	FLASH	COMMERCIAL	47	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.75 mm	70 Cel			2MX16	2M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B47	3.6 V	1.2 mm		6.37 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE		6.39 mm		85 ns	3
M29W200BT120M6T	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	3.3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel			128KX16	128K	-40 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	3.6 V	2.8 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	2097152 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		90 ns	2.7	YES
M28W320FSU70ZB1F	STMicroelectronics	FLASH	COMMERCIAL	47	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA47,6X8,30		Flash Memories		.75 mm	70 Cel			2MX16	2M	0 Cel	32	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B47	3.6 V	1.2 mm		6.37 mm	Not Qualified		33554432 bit	2.7 V			e1			NOR TYPE	.00005 Amp	6.39 mm	YES	70 ns	3	NO
M29F200BT90MT1T	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel			128KX16	128K	0 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	3 mm	100000 Write/Erase Cycles	12.6 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.5 mm		90 ns	5	YES
M29F002B-70XK1	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			262144 words	5			8	CHIP CARRIER				20	1.27 mm	70 Cel			256KX8	256K	0 Cel					QUAD	R-PQCC-J32	5.25 V	3.56 mm		11.455 mm	Not Qualified	BOTTOM	2097152 bit	4.75 V	20 YEARS DATA RETENTION; 100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK					NOR TYPE		13.995 mm		70 ns	5
M28W160BT70ZB1T	STMicroelectronics	FLASH	COMMERCIAL	46	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories		.75 mm	70 Cel			1MX16	1M	0 Cel	8,31	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B46	3.6 V	1.2 mm		6.37 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	6.39 mm	YES	70 ns	3	NO
M29F400B-120XM5	STMicroelectronics	FLASH	OTHER	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel			256KX16	256K	-20 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G44			100000 Write/Erase Cycles		Not Qualified	BOTTOM	4194304 bit				e0			NOR TYPE	.0001 Amp			120 ns		YES
M29F400BB90N3	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel			256KX16	256K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M28W160T100N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K,32K	20 mA	1048576 words		NO	3/3.3,3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel			1MX16	1M	-40 Cel	8,31	YES	TIN LEAD		DUAL	R-PDSO-G48					Not Qualified	TOP	16777216 bit				e0			NOR TYPE	.000005 Amp		YES	100 ns		NO
M29R800T-150N5TR	STMicroelectronics	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE, THIN PROFILE		16			.5 mm	85 Cel		3-STATE	1MX8	1M	-20 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	2.7 V						NOR TYPE		18.4 mm		150 ns	3
M59DR032E120ZB1	STMicroelectronics	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY, FINE PITCH					.75 mm	70 Cel			2MX16	2M	0 Cel					BOTTOM	R-PBGA-B48	2.2 V			7 mm	Not Qualified	TOP	33554432 bit	1.65 V						NOR TYPE		12 mm		120 ns	1.8
M28F220-120N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	35 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	16	Flash Memories		.5 mm	85 Cel			256KX8	256K	-40 Cel	1,2,1,1	YES	TIN LEAD		DUAL	R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000008 Amp	18.4 mm		120 ns	12	NO
M29F100T-70XN3TR	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	65536 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		3-STATE	64KX16	64K	-40 Cel	1,2,1,1	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	5.25 V	1.2 mm		12 mm	Not Qualified	TOP	1048576 bit	4.75 V	CONFG AS 64K X 16; TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M28F201-150P1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	70 Cel			256KX8	256K	0 Cel		YES	TIN LEAD		DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified		2097152 bit	4.5 V			e0			NOR TYPE	.0001 Amp	41.91 mm		150 ns	12	NO
M28W320ECB10ZB6E	STMicroelectronics	FLASH	INDUSTRIAL	47	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.75 mm	85 Cel			2MX16	2M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B47	3.6 V	1.2 mm		6.37 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE		6.39 mm		100 ns	3
M58CR064D200ZB6	STMicroelectronics	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.75 mm	85 Cel			4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B56	2 V	1.2 mm		6.5 mm	Not Qualified	BOTTOM	67108864 bit	1.65 V						NOR TYPE		10 mm		200 ns	1.8
M29F002BB55K1F	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel			256KX8	256K	0 Cel	1,2,1,3	YES			QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm		55 ns	5	YES
M28W160CB70N1S	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel			1MX16	1M	0 Cel			TIN LEAD		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE		18.4 mm		70 ns	3
M29F200BB45MT1	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel			128KX16	128K	0 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	3 mm	100000 Write/Erase Cycles	12.6 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.5 mm		45 ns	5	YES
M58CR032C100ZB6	STMicroelectronics	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	30 mA	2097152 words	1.8	NO	1.8,1.8/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel			2MX16	2M	-40 Cel	8,63	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B56	2 V	1.2 mm		6.5 mm	Not Qualified	TOP	33554432 bit	1.65 V		4	e1			NOR TYPE	.000005 Amp	10 mm	YES	100 ns	1.8	NO
M28F420-80YM3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	35 mA	524288 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	16	Flash Memories		1.27 mm	125 Cel			512KX8	512K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.00005 Amp	28.2 mm		80 ns	12	NO
M29DW324DB70ZA1T	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	70 Cel			2MX16	2M	0 Cel					BOTTOM	R-PBGA-B63	3.6 V	1.2 mm		7 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		11 mm		70 ns	3
M28F211-70N5	STMicroelectronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			256KX8	256K	-20 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G40			100000 Write/Erase Cycles		Not Qualified	TOP	2097152 bit				e0			NOR TYPE	.000008 Amp			70 ns		NO
M28W160ECB90N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel			1MX16	1M	-40 Cel	8,31	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V			e3/e6	NOT SPECIFIED	260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	NO
M28V841-120N3RTR	STMicroelectronics	FLASH	AUTOMOTIVE	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	125 Cel		3-STATE	1MX8	1M	-40 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified		8388608 bit	3 V								18.4 mm		120 ns	12
M29W400DB55M1T	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel			256KX16	256K	0 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	3.6 V	2.8 mm		13.3 mm	Not Qualified	BOTTOM	4194304 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		55 ns	3	YES
M28W640ECB90ZB6S	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	4194304 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories		.75 mm	85 Cel			4MX16	4M	-40 Cel	8,127	YES	Tin/Lead (Sn63Pb37)		BOTTOM	R-PBGA-B48	3.6 V	1.2 mm		6.39 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	10.5 mm	YES	90 ns	3	NO
M29F200T-90N3R	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel	YES	3-STATE	128KX16	128K	-40 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		90 ns	5	YES
M29W800B-100N1R	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	16	Flash Memories		.5 mm	70 Cel	YES	3-STATE	1MX8	1M	0 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		100 ns	3	YES
M29W400B-90ZA5TR	STMicroelectronics	FLASH	OTHER	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel			256KX16	256K	-20 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	BOTTOM	4194304 bit	3 V	CONFG AS 256K X 16; BOTTOM BOOT BLOCK		e1			NOR TYPE	.00005 Amp	9 mm		90 ns	3	YES
M29F002BT55N3F	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	125 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		55 ns	5	YES
M29F100T-150N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	16	Flash Memories		.5 mm	85 Cel		3-STATE	128KX8	128K	-40 Cel	1,2,1,1	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified	TOP	1048576 bit	4.5 V			e0			NOR TYPE	.0001 Amp	18.4 mm		150 ns	5	YES
M29DW323DB70ZA6	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories		.8 mm	85 Cel			2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn63Pb37)	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm		7 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	11 mm	YES	70 ns	3	YES
M28W640FSU70ZA1E	STMicroelectronics	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	70 Cel			4MX16	4M	0 Cel	64	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm		10 mm	Not Qualified		67108864 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES		e1			NOR TYPE	.00005 Amp	13 mm	YES	70 ns	3	NO
SMC064AFY6	STMicroelectronics	FLASH CARD	INDUSTRIAL	50	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			8388608 words	3.3			8	UNCASED CHIP						85 Cel			8MX8	8M	-40 Cel					UPPER	R-XUUC-N50	3.3 V				Not Qualified		67108864 bit	3 V	CAN ALSO OPERATE WITH 5V SUPPLY					NOR TYPE				300 ns	3.3
M58BW016BT90ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel			512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B80	3.6 V	1.7 mm		10 mm	Not Qualified	TOP	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	90 ns	3	NO
M28F256-10C313	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			32768 words	5			8	CHIP CARRIER					1.27 mm	125 Cel		3-STATE	32KX8	32K	-40 Cel					QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified		262144 bit	4.5 V	1000 ERASE/PROGRAM CYCLES					NOR TYPE		13.995 mm		100 ns	12
M29W400DT45N6F	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			256KX16	256K	-40 Cel	1,2,1,7	YES	TIN/TIN BISMUTH	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	4194304 bit	3 V	TOP BOOT BLOCK		e3/e6	NOT SPECIFIED	260	NOR TYPE	.0001 Amp	18.4 mm		45 ns	3	YES
M29F100BB70M1T	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	65536 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel			64KX16	64K	0 Cel	1,2,1,1	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm		13.3 mm	Not Qualified	BOTTOM	1048576 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		70 ns	5	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.