STMicroelectronics Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M29F002BB70N3E	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5		YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	125 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M29W160EB70ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3		YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel			1MX16	1M	-40 Cel	1,2,1,31	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm		6 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
M30L0R7000B0ZAQF	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	47 mA	8388608 words	1.8		NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel			8MX16	8M	-25 Cel	4,127	YES			BOTTOM	R-PBGA-B88	2 V	1.2 mm		8 mm	Not Qualified		BOTTOM	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4		NOT SPECIFIED	260	NOR TYPE	.000005 Amp	10 mm	YES	85 ns	1.8	NO
M29F016B70M6T	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	2097152 words	5		YES	5	8	SMALL OUTLINE	SOP44,.63		Flash Memories		1.27 mm	85 Cel			2MX8	2M	-40 Cel	32	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm		13.3 mm	Not Qualified			16777216 bit	4.5 V			e3			NOR TYPE	.00015 Amp	28.2 mm		70 ns	5	YES
M28F256-90B3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5				8	IN-LINE					2.54 mm	125 Cel		3-STATE	32KX8	32K	-40 Cel					DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified			262144 bit	4.5 V						NOR TYPE		41.91 mm		90 ns	12
M28F420-70XM1	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	35 mA	524288 words	5		NO	5	8	SMALL OUTLINE	SOP44,.63	16	Flash Memories		1.27 mm	70 Cel			512KX8	512K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G44	5.25 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified		BOTTOM	4194304 bit	4.75 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	28.2 mm		70 ns	12	NO
M58BW32FB5T3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	SYNCHRONOUS	4K,2K,16K	50 mA	524288 words	2.7		NO	3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel			512KX32	512K	-40 Cel	4,8,62	YES			QUAD	R-PQFP-G80	3.3 V	3.4 mm		14 mm	Not Qualified		BOTTOM	16777216 bit	2.5 V		4				NOR TYPE	.00015 Amp	20 mm	YES	55 ns	3.3	NO
M29W010B90N6T	STMicroelectronics	FLASH	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	131072 words	3.3		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel			128KX8	128K	-40 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32	3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified			1048576 bit	2.7 V			e0			NOR TYPE	.0001 Amp	18.4 mm		90 ns	2.7	YES
M58BW016BB80ZA3F	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3		NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel			512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B80	3.6 V	1.7 mm		10 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	80 ns	3	NO
M29F080A55M6	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		64K	20 mA	1048576 words	5		YES	5	8	SMALL OUTLINE	SOP44,.63		Flash Memories		1.27 mm	85 Cel			1MX8	1M	-40 Cel	16	YES	TIN LEAD	YES	DUAL	R-PDSO-G44					Not Qualified			8388608 bit				e0			NOR TYPE	.00015 Amp			55 ns		YES
M50FW040K5TP	STMicroelectronics	FLASH	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		60 mA	524288 words	3.3		NO	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel			512KX8	512K	-20 Cel	8	YES	MATTE TIN	YES	QUAD	R-PQCC-J32	3.6 V	3.56 mm		11.43 mm	Not Qualified			4194304 bit	3 V			e3			NOR TYPE	.0001 Amp	13.97 mm		11 ns	3	NO
M28W640FSB85ZA6	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	20 mA	4194304 words			NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel			4MX16	4M	-40 Cel	8,127	YES	Tin/Lead (Sn/Pb)		BOTTOM	S-PBGA-B64					Not Qualified		BOTTOM	67108864 bit				e0			NOR TYPE	.000005 Amp		YES	85 ns		NO
M28F512-12C3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS			65536 words	5				8	CHIP CARRIER					1.27 mm	125 Cel		3-STATE	64KX8	64K	-40 Cel					QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified			524288 bit	4.5 V						NOR TYPE		13.995 mm		12 ns	12
M29F100T-70XM6	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	65536 words	5		YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		3-STATE	64KX16	64K	-40 Cel	1,2,1,1	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.25 V	2.62 mm		13.3 mm	Not Qualified		TOP	1048576 bit	4.75 V	CONFG AS 64K X 16; TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		70 ns	5	YES
M29W640GT60ZF6F	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	10 mA	4194304 words	3		YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel			4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm		10 mm	Not Qualified		TOP	67108864 bit	2.7 V		4/8		40	260	NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
M29F800DT90M1E	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5		YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel			512KX16	512K	0 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G44	5.5 V	2.8 mm		13.3 mm	Not Qualified		TOP	8388608 bit	4.5 V	TOP BOOT BLOCK			NOT SPECIFIED	250	NOR TYPE	.00015 Amp	28.2 mm	YES	70 ns	5	YES
M29W040B70K1F	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	64K	20 mA	524288 words	3.3		YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel			512KX8	512K	0 Cel	8	YES	MATTE TIN		QUAD	R-PQCC-J32	3.6 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			4194304 bit	2.7 V			e3			NOR TYPE	.0001 Amp	13.97 mm		70 ns	2.7	YES
M29W800DXT45ZA1	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3		YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	70 Cel			512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm		6 mm	Not Qualified		TOP	8388608 bit	3 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	9 mm	YES	45 ns	3	YES
M28W320CT85ZB1T	STMicroelectronics	FLASH	COMMERCIAL	47	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3		NO	3,3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA47,6X8,30		Flash Memories		.75 mm	70 Cel			2MX16	2M	0 Cel	8,63	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B47	3.6 V	1.2 mm		6.39 mm	Not Qualified		TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	10.5 mm	YES	85 ns	3	NO
M50FW020K1	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	64K	60 mA	262144 words	3.3		NO	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel			256KX8	256K	0 Cel	4	YES	Matte Tin (Sn)		QUAD	R-PQCC-J32	3.6 V	3.56 mm		11.455 mm	Not Qualified			2097152 bit	3 V			e3			NOR TYPE	.0001 Amp	13.995 mm		11 ns	3	NO
M29F400BT90M6	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5		YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel			256KX16	256K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified		TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		70 ns	5	YES
M29W800T-150N5RTR	STMicroelectronics	FLASH	OTHER	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words			YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	16	Flash Memories		.5 mm	85 Cel	YES	3-STATE	1MX8	1M	-20 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified		TOP	8388608 bit	2.7 V			e0			NOR TYPE	.0001 Amp	18.4 mm		150 ns	3	YES
M28F201-120K3	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5		NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	125 Cel		3-STATE	256KX8	256K	-40 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified			2097152 bit	4.5 V			e0			NOR TYPE	.0001 Amp	13.995 mm		120 ns	12	NO
M29F400T-120M1	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5		YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified		TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		120 ns	5	YES
M58BW32FT5T3	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	SYNCHRONOUS	4K,2K,16K	50 mA	524288 words	2.7		NO	3/3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel			512KX32	512K	-40 Cel	4,8,62	YES			QUAD	R-PQFP-G80	3.3 V	3.4 mm		14 mm	Not Qualified		TOP	16777216 bit	2.5 V		4				NOR TYPE	.00015 Amp	20 mm	YES	55 ns	3.3	NO
M29F002NT-90XN1	STMicroelectronics	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5				8	SMALL OUTLINE, THIN PROFILE				20	.5 mm	70 Cel			256KX8	256K	0 Cel					DUAL	R-PDSO-G32	5.25 V	1.2 mm		8 mm	Not Qualified		TOP	2097152 bit	4.75 V	20 YEARS DATA RETENTION; 100000 PROGRAM/ERASE CYCLES					NOR TYPE		18.4 mm		90 ns	5
M28F101-70N3R	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5		NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	125 Cel	YES	3-STATE	128KX8	128K	-40 Cel		YES	TIN LEAD		DUAL	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified			1048576 bit	4.5 V			e0			NOR TYPE	.00005 Amp	18.4 mm		70 ns	12	NO
M28F101-70K3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5				8	CHIP CARRIER					1.27 mm	125 Cel		3-STATE	128KX8	128K	-40 Cel					QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified			1048576 bit	4.5 V						NOR TYPE		13.995 mm		70 ns	12
M29F102BB70K1	STMicroelectronics	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	20 mA	65536 words	5		YES	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories		1.27 mm	70 Cel			64KX16	64K	0 Cel	1,2,1,1	YES			QUAD	S-PQCC-J44	5.5 V	4.57 mm		16.585 mm	Not Qualified		BOTTOM	1048576 bit	4.5 V	BOTTOM BOOT BLOCK		e0	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.586 mm		70 ns	5	YES
M58CR064Q10ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	30 mA	4194304 words	1.8		NO	1.8,1.8/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel			4MX16	4M	-40 Cel	8,127	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B56	2 V	1.2 mm		6.5 mm	Not Qualified		BOTTOM	67108864 bit	1.65 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e1			NOR TYPE	.000005 Amp	10 mm	YES	100 ns	1.8	NO
M29R008D-100N1	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words					8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		3-STATE	1MX8	1M	0 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified			8388608 bit	2.7 V						NOR TYPE		18.4 mm		100 ns	3
M50FLW040AK5P	STMicroelectronics	FLASH	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		60 mA	524288 words	3.3		NO	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel			512KX8	512K	-20 Cel	8	YES	MATTE TIN	YES	QUAD	R-PQCC-J32	3.6 V	3.56 mm		11.43 mm	Not Qualified			4194304 bit	3 V			e3			NOR TYPE	.0001 Amp	13.97 mm		11 ns	3	NO
M28F512-15B112	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL			50 mA	65536 words	5		NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	70 Cel			64KX8	64K	0 Cel		YES	TIN LEAD		DUAL	R-PDIP-T32			100 Write/Erase Cycles		Not Qualified			524288 bit				e0			NOR TYPE	.0001 Amp			150 ns		NO
M29F512B70K1T	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		20 mA	65536 words	5		YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel			64KX8	64K	0 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified			524288 bit	4.5 V			e0			NOR TYPE	.0001 Amp	13.995 mm		70 ns	5	YES
M28W160CB70N1F	STMicroelectronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3				16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	70 Cel			1MX16	1M	0 Cel			TIN		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V			e3			NOR TYPE		18.4 mm		70 ns	3
M39832-B15WNE6T	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		20 mA	524288 words	3.3	EEPROM+FLASH		3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Other Memory ICs		.5 mm	85 Cel			512KX16	512K	-40 Cel			TIN LEAD		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	10 ms	BOTTOM	8388608 bit	2.7 V			e0			NOR TYPE	.0001 Amp	18.4 mm		150 ns	2.7
M28F220-80M3TR	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5				8	SMALL OUTLINE		16			1.27 mm	125 Cel			256KX8	256K	-40 Cel					DUAL	R-PDSO-G44	5.5 V	2.62 mm		13.3 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK					NOR TYPE		28.2 mm		80 ns	12
M50FLW080ANB5TG	STMicroelectronics	FLASH	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	4K,64K	60 mA	1048576 words	3.3		NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		Flash Memories		.5 mm	85 Cel			1MX8	1M	-20 Cel	48,13	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified			8388608 bit	3 V			e3/e6	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	12.4 mm		11 ns	3	NO
M58MR032C120ZC6	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	4K,32K	50 mA	2097152 words	1.8		NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,8X14,40/20		Flash Memories		.5 mm	85 Cel			2MX16	2M	-40 Cel	8,63	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B48	2 V	1.2 mm		6.29 mm	Not Qualified		TOP	33554432 bit	1.7 V		4	e1			NOR TYPE	.00001 Amp	10.53 mm	YES	20 ns	1.8	NO
M29R800T-120M5TR	STMicroelectronics	FLASH	OTHER	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3				8	SMALL OUTLINE		16			1.27 mm	85 Cel		3-STATE	1MX8	1M	-20 Cel					DUAL	R-PDSO-G44	3.6 V	2.62 mm		13.3 mm	Not Qualified		TOP	8388608 bit	2.7 V						NOR TYPE		28.2 mm		120 ns	3
M28F512-20B1TR	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			65536 words	5				8	IN-LINE					2.54 mm	70 Cel		3-STATE	64KX8	64K	0 Cel					DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified			524288 bit	4.5 V	10K ERASE/PROGRAM CYCLES					NOR TYPE		41.91 mm		20 ns	12
M29F800AB90M6	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5		YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel			512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.00015 Amp	28.2 mm		90 ns	5	YES
M28F201-150K3	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5		NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	125 Cel		3-STATE	256KX8	256K	-40 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified			2097152 bit	4.5 V			e0			NOR TYPE	.0001 Amp	13.995 mm		150 ns	12	NO
M28F1001-10F112	STMicroelectronics	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	131072 words	5		NO	5	8	IN-LINE, WINDOW	DIP32,.6		Flash Memories		2.54 mm	70 Cel		3-STATE	128KX8	128K	0 Cel		YES	TIN LEAD		DUAL	R-GDIP-T32	5.5 V	5.72 mm	100 Write/Erase Cycles	15.24 mm	Not Qualified			1048576 bit	4.5 V	100 ERASE/PROGRAM CYCLES		e0			NOR TYPE	.0001 Amp	41.885 mm		100 ns	12	NO
M29F002BB120N3E	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5		YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	125 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M29F002BNB45K6E	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5		YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES			QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm		45 ns	5	YES
M29W008B-120N1	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3.3		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		3-STATE	1MX8	1M	0 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified		BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		120 ns	3	YES
M28F420-100N1TR	STMicroelectronics	FLASH	COMMERCIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5				8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel			512KX8	512K	0 Cel					DUAL	R-PDSO-G56	5.5 V	1.2 mm		14 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; ALSO CONFIGURABLE AS 256K X 16; BLOCK ERASE; BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		100 ns	12

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.