STMicroelectronics Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M28W160BB70GB6	STMicroelectronics	FLASH	INDUSTRIAL	46	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3	NO	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA46,6X8,30		Flash Memories		.75 mm	85 Cel			1MX16	1M	-40 Cel	8,31	YES	TIN LEAD		BOTTOM		R-PBGA-B46	3.6 V	1 mm			6.37 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	6.39 mm	YES	70 ns	3	NO
M58MR064C120ZC6T	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	50 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,8X14,40/20		Flash Memories		.5 mm	85 Cel			4MX16	4M	-40 Cel	8,127	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM		R-PBGA-B48	2 V	1.2 mm			6.29 mm	Not Qualified			TOP	67108864 bit	1.65 V		4	e1			NOR TYPE	.000005 Amp	10.53 mm	YES	18 ns	1.8	NO
M29W004BT120N6T	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			512KX8	512K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL		R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles		10 mm	Not Qualified			TOP	4194304 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		90 ns	2.7	YES
M29F200T-70XM1TR	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE		16			1.27 mm	70 Cel		3-STATE	256KX8	256K	0 Cel					DUAL		R-PDSO-G44	5.25 V	2.62 mm			13.3 mm	Not Qualified			TOP	2097152 bit	4.75 V						NOR TYPE		28.2 mm		70 ns	5
M45PE80-VMP6TP	STMicroelectronics	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		15 mA	1048576 words	3		3/3.3	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel			1MX8	1M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-XDSO-N8	3.6 V	1 mm	100000 Write/Erase Cycles	33 MHz	5 mm	Not Qualified	25 ms	SPI		8388608 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm			2.7
M28F201-90N1R	STMicroelectronics	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel	YES	3-STATE	256KX8	256K	0 Cel		YES	TIN LEAD		DUAL		R-PDSO-G32	5.5 V	1.2 mm			8 mm	Not Qualified				2097152 bit	4.5 V			e0			NOR TYPE	.0001 Amp	18.4 mm		90 ns	12	NO
M29W400B-90N6RTR	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	YES		256KX16	256K	-40 Cel	1,2,1,7	YES	Tin/Lead (Sn/Pb)	YES	DUAL		R-PDSO-G48			100000 Write/Erase Cycles			Not Qualified			BOTTOM	4194304 bit				e0			NOR TYPE	.00005 Amp			90 ns		YES
M29W400B-120ZA5	STMicroelectronics	FLASH	OTHER	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel			512KX8	512K	-20 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3.6 V	1.35 mm	100000 Write/Erase Cycles		6 mm	Not Qualified			BOTTOM	4194304 bit	2.7 V	CONFG AS 256K X 16; BOTTOM BOOT BLOCK		e1			NOR TYPE	.00005 Amp	9 mm		120 ns	2.7	YES
M29F002BT90N1	STMicroelectronics	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel			256KX8	256K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M28F256-10C6TR	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			32768 words	5			8	CHIP CARRIER				20	1.27 mm	85 Cel			32KX8	32K	-40 Cel					QUAD		R-PQCC-J32	5.5 V	3.56 mm			11.455 mm	Not Qualified				262144 bit	4.5 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES					NOR TYPE		13.995 mm		100 ns	12
M29F010B90P1T	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE					2.54 mm	70 Cel			128KX8	128K	0 Cel					DUAL		R-PDIP-T32	5.5 V	5.08 mm			15.24 mm	Not Qualified				1048576 bit	4.5 V						NOR TYPE		41.91 mm		70 ns	5
M28F410-80YM6TR	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	35 mA	524288 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel			512KX8	512K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles		13.3 mm	Not Qualified			TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.000008 Amp	28.2 mm		80 ns	12	NO
M28R400CB90ZB1	STMicroelectronics	FLASH	COMMERCIAL	46	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			262144 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.75 mm	70 Cel			256KX16	256K	0 Cel					BOTTOM		R-PBGA-B46	2 V	1.2 mm			6.37 mm	Not Qualified			BOTTOM	4194304 bit	1.7 V	BOTTOM BOOT BLOCK					NOR TYPE		6.39 mm		90 ns	1.8
M28F101-120K3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER					1.27 mm	125 Cel		3-STATE	128KX8	128K	-40 Cel					QUAD		R-PQCC-J32	5.5 V	3.56 mm			11.455 mm	Not Qualified				1048576 bit	4.5 V						NOR TYPE		13.995 mm		120 ns	12
M28W640FCB70ZB6F	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories		.75 mm	85 Cel			4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B48	3.6 V	1.2 mm			6.39 mm	Not Qualified			BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.000005 Amp	10.5 mm	YES	70 ns	3	NO
M28V421-120N6TR	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			512KX8	512K	-40 Cel					DUAL		R-PDSO-G40	3.6 V	1.2 mm			10 mm	Not Qualified			BOTTOM	4194304 bit	3 V	10K ERASE/PROGRAM CYCLES					NOR TYPE		18.4 mm		120 ns	12
M29W400DB45ZA1E	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	70 Cel			256KX16	256K	0 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm			6 mm	Not Qualified			BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.0001 Amp	9 mm		45 ns	3	YES
M29W320ET70N1T	STMicroelectronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel			2MX16	2M	0 Cel	8,63	YES	TIN LEAD	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			TOP	33554432 bit	2.7 V			e0			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29F400BB55M6E	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel			256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL		R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles		13.3 mm	Not Qualified			BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK			40	245	NOR TYPE	.0001 Amp	28.2 mm		55 ns	5	YES
M28F410-100XM3TR	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE					1.27 mm	125 Cel			512KX8	512K	-40 Cel					DUAL		R-PDSO-G44	5.25 V	2.62 mm			13.3 mm	Not Qualified			TOP	4194304 bit	4.75 V	100000 PROGRAM/ERASE CYCLES; ALSO CONFIGURABLE AS 256K X 16; BLOCK ERASE; TOP BOOT BLOCK					NOR TYPE		28.2 mm		100 ns	12
M28F210-90XN6TR	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			256KX8	256K	-40 Cel					DUAL		R-PDSO-G48	5.25 V	1.2 mm			12 mm	Not Qualified			TOP	2097152 bit	4.75 V	100000 PROGRAM/ERASE CYCLES; USER CONFIGURABLE AS 128K X 16; BLOCK ERASE; TOP BOOT BLOCK					NOR TYPE		18.4 mm		90 ns	12
M59DR016D120ZB1	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	40 mA	1048576 words	1.8	YES	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories		.75 mm	70 Cel			1MX16	1M	0 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM		R-PBGA-B48	2.2 V	1.35 mm			7 mm	Not Qualified			BOTTOM	16777216 bit	1.65 V		4	e1			NOR TYPE	.000005 Amp	12 mm	YES	120 ns	1.8	YES
M29W200BT120N1T	STMicroelectronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel			128KX16	128K	0 Cel	1,2,1,3	YES	TIN/TIN BISMUTH	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			TOP	2097152 bit	2.7 V	TOP BOOT BLOCK		e3/e6	NOT SPECIFIED	260	NOR TYPE	.0001 Amp	20 mm		90 ns	2.7	YES
M28F210-70YM3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	35 mA	131072 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel			128KX16	128K	-40 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL		R-PDSO-G44			100 Write/Erase Cycles			Not Qualified			TOP	2097152 bit				e0			NOR TYPE	.00005 Amp			70 ns		NO
M29F010B120N3F	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20		Flash Memories		.5 mm	125 Cel			128KX8	128K	-40 Cel	8	YES	TIN/TIN BISMUTH		DUAL		R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified				1048576 bit	4.5 V			e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M50FW040K1TG	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		60 mA	524288 words	3.3	NO	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel			512KX8	512K	0 Cel	8	YES	MATTE TIN	YES	QUAD		R-PQCC-J32	3.6 V	3.55 mm			11.43 mm	Not Qualified				4194304 bit	3 V			e3			NOR TYPE	.0001 Amp	13.97 mm		11 ns	3	NO
M28F256-90B3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	125 Cel		3-STATE	32KX8	32K	-40 Cel		YES	TIN LEAD		DUAL		R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified				262144 bit	4.5 V			e0			NOR TYPE	.0001 Amp	41.91 mm		90 ns	12	NO
M29W004B-150N1	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		3-STATE	512KX8	512K	0 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL		R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles		10 mm	Not Qualified			BOTTOM	4194304 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.00005 Amp	18.4 mm		150 ns	2.7	YES
M29W800AB80N6T	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	20	.5 mm	85 Cel			512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	8388608 bit	3 V	20 YEARS DATA RETENTION; BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		80 ns	3	YES
M29W008AB100N6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	100 mA	1048576 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	20	.5 mm	85 Cel			1MX8	1M	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL		R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles		10 mm	Not Qualified			BOTTOM	8388608 bit	2.7 V	20 YEARS DATA RETENTION; BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		100 ns	2.7	YES
M50FW080N1T	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	64K	60 mA	1048576 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel			1MX8	1M	0 Cel	16	YES	TIN LEAD		DUAL		R-PDSO-G40	3.6 V	1.2 mm			10 mm	Not Qualified				8388608 bit	3 V			e0			NOR TYPE	.0001 Amp	18.4 mm		11 ns	3	NO
M29F200BB90N6T	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			128KX16	128K	-40 Cel	1,2,1,3	YES	TIN/TIN BISMUTH	YES	DUAL		R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e3/e6	NOT SPECIFIED	260	NOR TYPE	.0001 Amp	18.4 mm		90 ns	5	YES
M29F200BT45M1E	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel			128KX16	128K	0 Cel	1,2,1,3	YES		YES	DUAL		R-PDSO-G44	5.5 V	3 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified			TOP	2097152 bit	4.5 V	TOP BOOT BLOCK			40	245	NOR TYPE	.0001 Amp	28.5 mm		45 ns	5	YES
M29W320DB90N1E	STMicroelectronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	70 Cel			2MX16	2M	0 Cel			TIN/TIN BISMUTH		DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e3/e6	NOT SPECIFIED	260	NOR TYPE		18.4 mm		90 ns	3
M29F400BT70M1T	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel			256KX16	256K	0 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL		R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles		13.3 mm	Not Qualified			TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		70 ns	5	YES
M28W800CB85ZB1T	STMicroelectronics	FLASH	COMMERCIAL	46	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	524288 words	3	NO	3,3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA46,6X8,30		Flash Memories		.75 mm	70 Cel			512KX16	512K	0 Cel	8,15	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM		R-PBGA-B46	3.6 V	1.2 mm			6.37 mm	Not Qualified			BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.000005 Amp	6.39 mm	YES	85 ns	3	NO
M29F002BT55K3F	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	125 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES			QUAD		R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			TOP	2097152 bit	4.5 V	TOP BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm		55 ns	5	YES
M29F002BT90N6F	STMicroelectronics	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES	TIN/TIN BISMUTH		DUAL		R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M28W320EBB10N6T	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3	NO	1.8/2.5,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel			2MX16	2M	-40 Cel	8,63	YES	TIN LEAD		DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm	YES	100 ns	3	NO
M58BW032BB45T6	STMicroelectronics	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K,2K,16K		1048576 words	3.3	NO	3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	85 Cel			1MX32	1M	-40 Cel	4,8,62	YES			QUAD		R-PQFP-G80						Not Qualified			BOTTOM	33554432 bit			4				NOR TYPE	.0001 Amp		YES	45 ns		NO
M28F410-60YM1TR	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	35 mA	524288 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel			512KX8	512K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles		13.3 mm	Not Qualified			TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	28.2 mm		60 ns	12	NO
M28F220-90XN6TR	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE, THIN PROFILE		16			.5 mm	85 Cel			256KX8	256K	-40 Cel					DUAL		R-PDSO-G48	5.25 V	1.2 mm			12 mm	Not Qualified			BOTTOM	2097152 bit	4.75 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		90 ns	12
M28F101-90XN3	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	125 Cel		3-STATE	128KX8	128K	-40 Cel		YES	TIN LEAD		DUAL		R-PDSO-G32	5.25 V	1.2 mm			8 mm	Not Qualified				1048576 bit	4.75 V			e0			NOR TYPE	.00005 Amp	18.4 mm		90 ns	12	NO
M29W641DL70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			16	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			4MX16	4M	-40 Cel			TIN		DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified				67108864 bit	3 V			e3			NOR TYPE		18.4 mm		70 ns	3
M50FW040N5TP	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		60 mA	524288 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			512KX8	512K	-20 Cel	8	YES	TIN/TIN BISMUTH	YES	DUAL		R-PDSO-G40	3.6 V	1.2 mm			10 mm	Not Qualified				4194304 bit	3 V			e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		11 ns	3	NO
M29F400BB90N1F	STMicroelectronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel			256KX16	256K	0 Cel	1,2,1,7	YES	TIN/TIN BISMUTH	YES	DUAL		R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M29F100B-70M3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel			128KX8	128K	-40 Cel	1,2,1,1	YES	TIN LEAD	YES	DUAL		R-PDSO-G44	5.5 V	2.62 mm			13.3 mm	Not Qualified			BOTTOM	1048576 bit	4.5 V	CONFG AS 64K X 16; BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		70 ns	5	YES
M29W640GB60ZF6E	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel			4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified			BOTTOM	67108864 bit	2.7 V		4/8		40	260	NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.