STMicroelectronics Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M50LPW040K1	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	64K	60 mA	524288 words	3.3	NO	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel			512KX8	512K	0 Cel	8	YES	Matte Tin (Sn)		QUAD		R-PQCC-J32	3.6 V	3.56 mm			11.43 mm	Not Qualified				4194304 bit	3 V			e3			NOR TYPE	.0001 Amp	13.97 mm		11 ns	3	NO
M28W231-150N1	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel			256KX8	256K	0 Cel					DUAL		R-PDSO-G40	3.6 V	1.2 mm			10 mm	Not Qualified			TOP	2097152 bit	2.7 V						NOR TYPE		18.4 mm		150 ns	12
M29F102B-45N6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,4K,16K,32K	50 mA	65536 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20		Flash Memories		.5 mm	85 Cel			64KX16	64K	-40 Cel	1,2,1,1	YES	TIN LEAD		DUAL		R-PDSO-G40						Not Qualified			BOTTOM	1048576 bit				e0			NOR TYPE	.0001 Amp			45 ns		YES
M28V410-180M6TR	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			8	SMALL OUTLINE					1.27 mm	85 Cel			512KX8	512K	-40 Cel					DUAL		R-PDSO-G44	3.6 V	2.62 mm			13.3 mm	Not Qualified			TOP	4194304 bit	3 V	10000 PROGRAM/ERASE CYCLES; USER CONFIGURABLE AS 256K X 16; BLOCK ERASE					NOR TYPE		28.2 mm		180 ns	12
M28F420-60YM1TR	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE		16			1.27 mm	70 Cel			512KX8	512K	0 Cel					DUAL		R-PDSO-G44	5.5 V	2.62 mm			13.3 mm	Not Qualified			BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK					NOR TYPE		28.2 mm		60 ns	12
SMC256BFY6E	STMicroelectronics	FLASH CARD	INDUSTRIAL	50	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			33554432 words	3.3			8	UNCASED CHIP						85 Cel			32MX8	32M	-40 Cel					UPPER		R-XUUC-N50	3.465 V					Not Qualified				268435456 bit	3.135 V	CAN ALSO OPERATE WITH 5V SUPPLY			40	245					300 ns	3.3
M28F220-90N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	35 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	16	Flash Memories		.5 mm	85 Cel			256KX8	256K	-40 Cel	1,2,1,1	YES	TIN LEAD		DUAL		R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000008 Amp	18.4 mm		90 ns	12	NO
M28F102-200N6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20		Flash Memories		.5 mm	85 Cel		3-STATE	64KX16	64K	-40 Cel		YES	TIN LEAD		DUAL		R-PDSO-G40	5.5 V	1.2 mm			10 mm	Not Qualified				1048576 bit	4.5 V			e0			NOR TYPE	.0001 Amp	12.4 mm		200 ns	12	NO
M28F210-70M6	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	35 mA	131072 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel			128KX16	128K	-40 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL		R-PDSO-G44			100000 Write/Erase Cycles			Not Qualified			TOP	2097152 bit				e0			NOR TYPE	.000008 Amp			70 ns		NO
M28F1001-10C112	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel		3-STATE	128KX8	128K	0 Cel		YES	TIN LEAD		QUAD		R-PQCC-J32	5.5 V	3.56 mm	100 Write/Erase Cycles		11.455 mm	Not Qualified				1048576 bit	4.5 V	100 ERASE/PROGRAM CYCLES		e0			NOR TYPE	.0001 Amp	13.995 mm		100 ns	12	NO
M29W040B120NZ1T	STMicroelectronics	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	524288 words	3.3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		Flash Memories		.5 mm	70 Cel			512KX8	512K	0 Cel	8	YES	TIN LEAD		DUAL		R-PDSO-G32	3.6 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified				4194304 bit	2.7 V			e0			NOR TYPE	.0001 Amp	12.4 mm		90 ns	2.7	YES
M29F002BT90N3E	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	125 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES	TIN/TIN BISMUTH		DUAL		R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M29W160DT90ZA1F	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	70 Cel			1MX16	1M	0 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B48	3.6 V	1.2 mm			8 mm	Not Qualified			TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE		9 mm		90 ns	3
M58BW16FB4ZA3F	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	2K,16K	50 mA	1048576 words	3.3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel			1MX32	1M	-40 Cel	8,31	YES			BOTTOM		R-PBGA-B80	3.6 V	1.7 mm			10 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V						NOR TYPE	.00015 Amp	12 mm	YES	45 ns	3.3	NO
M29W008ET70N6E	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			1MX8	1M	-40 Cel	1,2,1,15	YES		YES	DUAL		R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles		10 mm	Not Qualified			TOP	8388608 bit	2.7 V	TOP BOOT BLOCK		e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		70 ns	3	YES
M29W800FB9ZA3F	STMicroelectronics	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			524288 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel			512KX16	512K	-40 Cel					BOTTOM		R-PBGA-B48	3.6 V	1.2 mm			6 mm	Not Qualified			BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK							8 mm		90 ns	3
M29F002B-70XN1TR	STMicroelectronics	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE, THIN PROFILE				20	.5 mm	70 Cel			256KX8	256K	0 Cel					DUAL		R-PDSO-G32	5.25 V	1.2 mm			8 mm	Not Qualified			BOTTOM	2097152 bit	4.75 V	20 YEARS DATA RETENTION; 100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	5
M28F101-100N6R	STMicroelectronics	FLASH	INDUSTRIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel	YES	3-STATE	128KX8	128K	-40 Cel		YES	TIN LEAD		DUAL		R-PDSO-G32	5.5 V	1.2 mm			8 mm	Not Qualified				1048576 bit	4.5 V			e0			NOR TYPE	.00005 Amp	18.4 mm		100 ns	12	NO
M29F040-120K6	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel		3-STATE	512KX8	512K	-40 Cel	8	YES	TIN LEAD		QUAD		R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles		11.455 mm	Not Qualified				4194304 bit	4.5 V			e0			NOR TYPE	.0001 Amp	13.995 mm		120 ns	5	YES
M28F101-120N1RTR	STMicroelectronics	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		3-STATE	128KX8	128K	0 Cel					DUAL		R-PDSO-G32	5.5 V	1.2 mm			8 mm	Not Qualified				1048576 bit	4.5 V						NOR TYPE		18.4 mm		120 ns	12
M50FLW040AK5G	STMicroelectronics	FLASH	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		60 mA	524288 words	3.3	NO	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel			512KX8	512K	-20 Cel	8	YES	MATTE TIN	YES	QUAD		R-PQCC-J32	3.6 V	3.56 mm			11.43 mm	Not Qualified				4194304 bit	3 V			e3			NOR TYPE	.0001 Amp	13.97 mm		11 ns	3	NO
M28F220-80XN1	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	35 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	16	Flash Memories		.5 mm	70 Cel			256KX8	256K	0 Cel	1,2,1,1	YES	TIN LEAD		DUAL		R-PDSO-G48	5.25 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	2097152 bit	4.75 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	12	NO
M29F100B-70N1RTR	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel	YES		128KX8	128K	0 Cel	1,2,1,1	YES	TIN LEAD	YES	DUAL		R-PDSO-G48	5.5 V	1.2 mm			12 mm	Not Qualified			BOTTOM	1048576 bit	4.5 V	CONFIGURABLE AS 64K X 16		e0			NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M29F100B-120XN3	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel			128KX8	128K	-40 Cel	1,2,1,1	YES	TIN LEAD	YES	DUAL		R-PDSO-G48	5.25 V	1.2 mm			12 mm	Not Qualified			BOTTOM	1048576 bit	4.75 V	CONFG AS 64K X 16; BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		120 ns	5	YES
M28F210-100YM3TR	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE					1.27 mm	125 Cel			256KX8	256K	-40 Cel					DUAL		R-PDSO-G44	5.5 V	2.62 mm			13.3 mm	Not Qualified			TOP	2097152 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; USER CONFIGURABLE AS 128K X 16; BLOCK ERASE; TOP BOOT BLOCK					NOR TYPE		28.2 mm		100 ns	12
M28F421-80N3TR	STMicroelectronics	FLASH	AUTOMOTIVE	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	125 Cel			512KX8	512K	-40 Cel					DUAL		R-PDSO-G40	5.5 V	1.2 mm			10 mm	Not Qualified			BOTTOM	4194304 bit	4.5 V	100000 PROGRAM/ERASE CYCLES					NOR TYPE		18.4 mm		80 ns	12
M29W641DH70N6T	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	32K	20 mA	4194304 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel			4MX16	4M	-40 Cel	128	YES	TIN LEAD		DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified				67108864 bit	3 V			e0			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29F040-70XN5TR	STMicroelectronics	FLASH	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel		3-STATE	512KX8	512K	-20 Cel	8	YES	TIN LEAD		DUAL		R-PDSO-G32	5.25 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified				4194304 bit	4.75 V			e0			NOR TYPE	.00005 Amp	18.4 mm		70 ns	5	YES
M29W008AT90N6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	100 mA	1048576 words	3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	20	.5 mm	85 Cel			1MX8	1M	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL		R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles		10 mm	Not Qualified			TOP	8388608 bit	2.7 V	20 YEARS DATA RETENTION; TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		90 ns	2.7	YES
M29F080A70N6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	1048576 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			1MX8	1M	-40 Cel	16	YES	TIN LEAD	YES	DUAL		R-PDSO-G40	5.5 V	1.2 mm			10 mm	Not Qualified				8388608 bit	4.5 V			e0			NOR TYPE	.00015 Amp	18.4 mm		70 ns	5	YES
M29F080A90N1T	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	1048576 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel			1MX8	1M	0 Cel	16	YES	TIN LEAD	YES	DUAL		R-PDSO-G40	5.5 V	1.2 mm			10 mm	Not Qualified				8388608 bit	4.5 V			e0			NOR TYPE	.00015 Amp	18.4 mm		90 ns	5	YES
M29W102BT50XN1T	STMicroelectronics	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,4K,16K,32K	20 mA	65536 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20		Flash Memories		.5 mm	70 Cel			64KX16	64K	0 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL		R-PDSO-G40						Not Qualified			TOP	1048576 bit				e0			NOR TYPE	.0001 Amp			50 ns		YES
M29F102B-55N1	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	50 mA	65536 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20		Flash Memories		.5 mm	70 Cel			64KX16	64K	0 Cel	1,2,1,1	YES	TIN LEAD		DUAL		R-PDSO-G40	5.5 V	1.2 mm			10 mm	Not Qualified			BOTTOM	1048576 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK; BLOCK ERASE		e0			NOR TYPE	.0001 Amp	12.4 mm		55 ns	5	YES
M29W641DH90N1F	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel			4MX16	4M	0 Cel					DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		18.4 mm		90 ns	3
M28F220-90YM1	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	35 mA	262144 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	16	Flash Memories		1.27 mm	70 Cel			256KX8	256K	0 Cel	1,2,1,1	YES	TIN LEAD		DUAL		R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles		13.3 mm	Not Qualified			BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	28.2 mm		90 ns	12	NO
M28V411-150N6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			512KX8	512K	-40 Cel					DUAL		R-PDSO-G40	3.6 V	1.2 mm			10 mm	Not Qualified			TOP	4194304 bit	3 V	10K ERASE/PROGRAM CYCLES					NOR TYPE		18.4 mm		150 ns	12
M30L0T8000T2ZAQF	STMicroelectronics	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	77 mA	16777216 words	1.8	NO	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel			16MX16	16M	-25 Cel	4,255	YES			BOTTOM		R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified			TOP	268435456 bit	1.7 V		8		40	260	NOR TYPE	.00011 Amp	10 mm	YES	85 ns	1.8	NO
M45PE80-VMW6	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		15 mA	1048576 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel			1MX8	1M	-40 Cel			TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3.6 V	2.03 mm	100000 Write/Erase Cycles	33 MHz	5.25 mm	Not Qualified	25 ms	SPI		8388608 bit	2.7 V			e0			NOR TYPE	.00005 Amp	5.3 mm			2.7
M29W400B-120N6TR	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		3-STATE	256KX16	256K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	4194304 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.00005 Amp	18.4 mm		120 ns	2.7	YES
M29W400T-120N5TR	STMicroelectronics	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		3-STATE	256KX16	256K	-20 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			TOP	4194304 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.00005 Amp	18.4 mm		120 ns	2.7	YES
M58BW032BT60T3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,2K,16K		1048576 words	3.3	NO	3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel			1MX32	1M	-40 Cel	4,8,62	YES			QUAD		R-PQFP-G80	3.6 V	3.4 mm			14 mm	Not Qualified			TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE; TOP BOOT BLOCK	4				NOR TYPE	.0001 Amp	20 mm	YES	60 ns	3.3	NO
M28F410-80WN3	STMicroelectronics	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	60 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	125 Cel			256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G56						Not Qualified			TOP	4194304 bit				e0			NOR TYPE	.0001 Amp			80 ns		NO
M28F101-150K1TR	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER					1.27 mm	70 Cel		3-STATE	128KX8	128K	0 Cel					QUAD		R-PQCC-J32	5.5 V	3.56 mm			11.455 mm	Not Qualified				1048576 bit	4.5 V	10K ERASE/PROGRAM CYCLES					NOR TYPE		13.995 mm		150 ns	12
M28V161-100N6TR	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			2MX8	2M	-40 Cel					DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified				16777216 bit	3 V	100000 PROGRAM/ERASE CYCLES; SECTOR ERASE					NOR TYPE		18.4 mm		100 ns	12
M28F256-12F312	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE, WINDOW					2.54 mm	125 Cel		3-STATE	32KX8	32K	-40 Cel					DUAL		R-GDIP-T32	5.5 V	5.72 mm			15.24 mm	Not Qualified				262144 bit	4.5 V	100 ERASE/PROGRAM CYCLES					NOR TYPE		41.885 mm		120 ns	12
M29R800B-150N6TR	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE, THIN PROFILE		16			.5 mm	85 Cel		3-STATE	1MX8	1M	-40 Cel					DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	8388608 bit	2.7 V						NOR TYPE		18.4 mm		150 ns	3
M59DR032B120N1T	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	40 mA	2097152 words	1.8	YES	1.8/2	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel			2MX16	2M	0 Cel	8,63	YES	TIN LEAD		DUAL		R-PDSO-G48	2.2 V	1.2 mm			12 mm	Not Qualified			BOTTOM	33554432 bit	1.65 V		4	e0			NOR TYPE	.00001 Amp	18.4 mm	YES	120 ns	1.8	YES
M28F256A-15B6	STMicroelectronics	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel		YES	TIN LEAD		DUAL		R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified				262144 bit	4.5 V	10K ERASE/PROGRAM CYCLES		e0			NOR TYPE	.0002 Amp	41.91 mm		150 ns	12	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.