STMicroelectronics Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M28W320ECB70N1T	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel			2MX16	2M	0 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	3
M29F400BB45N1F	STMicroelectronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel			256KX16	256K	0 Cel	1,2,1,7	YES	TIN/TIN BISMUTH	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		45 ns	5	YES
M29R800B-120N6TR	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE, THIN PROFILE		16			.5 mm	85 Cel		3-STATE	1MX8	1M	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	8388608 bit	2.7 V						NOR TYPE		18.4 mm		120 ns	3
M29F400B-90M1	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL		R-PDSO-G44		5.5 V	2.62 mm	100000 Write/Erase Cycles		13.3 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		90 ns	5	YES
M29W040B55K6T	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	20 mA	524288 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel			512KX8	512K	-40 Cel	8	YES	TIN LEAD		QUAD		R-PQCC-J32		3.6 V	3.56 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			4194304 bit	3 V			e0			NOR TYPE	.0001 Amp	13.97 mm		55 ns	3	YES
M29F010B35XK3T	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL		16K	20 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	125 Cel			128KX8	128K	-40 Cel	8	YES	Tin/Lead (Sn/Pb)		QUAD		R-PQCC-J32				100000 Write/Erase Cycles			Not Qualified			1048576 bit				e0			NOR TYPE	.0001 Amp			35 ns		YES
M29W641DL90N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	32K	20 mA	4194304 words	3	YES	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel			4MX16	4M	0 Cel	128	YES	TIN LEAD		DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM/TOP	67108864 bit	2.7 V			e0			NOR TYPE	.0001 Amp	18.4 mm	YES	90 ns	3	YES
M29F002BB55K6T	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		QUAD		R-PQCC-J32		5.5 V	3.56 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	13.97 mm		55 ns	5	YES
M28V201P	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			262144 words	3.3			8	IN-LINE					2.54 mm	70 Cel			256KX8	256K	0 Cel					DUAL		R-PDIP-T32		3.6 V	5.08 mm			15.24 mm	Not Qualified			2097152 bit	3 V						NOR TYPE		41.91 mm		150 ns	12
M29F400BB55MT1E	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel			256KX16	256K	0 Cel	1,2,1,7	YES	MATTE TIN/NICKEL PALLADIUM GOLD	YES	DUAL		R-PDSO-G44		5.5 V	3 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e3/e4	40	245	NOR TYPE	.0001 Amp	28.5 mm		55 ns	5	YES
M29F200B-70XN3R	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	16	Flash Memories		.5 mm	125 Cel	YES	3-STATE	256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		5.25 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified		BOTTOM	2097152 bit	4.75 V			e0			NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M29DW641F60N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel			4MX16	4M	-40 Cel	16,126	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM/TOP	67108864 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES	8	e0			NOR TYPE	.0001 Amp	18.4 mm	YES	60 ns	3	YES
M28F1001-10F313	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE, WINDOW					2.54 mm	125 Cel		3-STATE	128KX8	128K	-40 Cel					DUAL		R-GDIP-T32		5.5 V	5.72 mm			15.24 mm	Not Qualified			1048576 bit	4.5 V	1000 ERASE/PROGRAM CYCLES					NOR TYPE		41.885 mm		100 ns	12
M29F002NT-90P1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	IN-LINE	DIP32,.6		Flash Memories	20	2.54 mm	70 Cel			256KX8	256K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified		TOP	2097152 bit	4.5 V	20 YEARS DATA RETENTION; 100000 PROGRAM/ERASE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	41.91 mm		90 ns	5	YES
M28V201-200K3	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL			20 mA	262144 words	3.3	NO	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	125 Cel			256KX8	256K	-40 Cel		YES	TIN LEAD		QUAD		R-PQCC-J32							Not Qualified			2097152 bit				e0			NOR TYPE	.0001 Amp			200 ns		NO
M28F512-12B3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			65536 words	5			8	IN-LINE					2.54 mm	125 Cel		3-STATE	64KX8	64K	-40 Cel					DUAL		R-PDIP-T32		5.5 V	5.08 mm			15.24 mm	Not Qualified			524288 bit	4.5 V						NOR TYPE		41.91 mm		12 ns	12
M28F411-120WN3	STMicroelectronics	FLASH	AUTOMOTIVE	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	50 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	125 Cel			512KX8	512K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G40				100000 Write/Erase Cycles			Not Qualified		TOP	4194304 bit				e0			NOR TYPE	.0001 Amp			120 ns		NO
M29W640GB90NB6E	STMicroelectronics	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	10 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel			4MX16	4M	-40 Cel	8,127	YES	MATTE TIN/TIN BISMUTH	YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V		4/8	e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm	YES	90 ns	3	YES
M29W640GL90NA6F	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	10 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			4MX16	4M	-40 Cel	128	YES	MATTE TIN/TIN BISMUTH	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			67108864 bit	2.7 V		4/8	e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm	YES	90 ns	3	YES
M29W200BT90N6T	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			128KX16	128K	-40 Cel	1,2,1,3	YES	TIN/TIN BISMUTH	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified		TOP	2097152 bit	2.7 V	TOP BOOT BLOCK		e3/e6	NOT SPECIFIED	260	NOR TYPE	.0001 Amp	20 mm		90 ns	2.7	YES
M28F210-70M1	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	35 mA	131072 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel			128KX16	128K	0 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL		R-PDSO-G44				100000 Write/Erase Cycles			Not Qualified		TOP	2097152 bit				e0			NOR TYPE	.000005 Amp			70 ns		NO
M28F210-120XN1	STMicroelectronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	35 mA	131072 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel			128KX16	128K	0 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL		R-PDSO-G48				100000 Write/Erase Cycles			Not Qualified		TOP	2097152 bit				e0			NOR TYPE	.000005 Amp			120 ns		NO
M50FLW040BN1G	STMicroelectronics	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	4K,64K	60 mA	524288 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel			512KX8	512K	0 Cel	48,5	YES		YES	DUAL		R-PDSO-G40		3.6 V	1.2 mm			10 mm	Not Qualified		TOP	4194304 bit	3 V				NOT SPECIFIED	260	NOR TYPE	.0001 Amp	18.4 mm		11 ns	3	NO
M28F151-120XK3	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL			30 mA	196608 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	125 Cel			192KX8	192K	-40 Cel		YES	TIN LEAD		QUAD		R-PQCC-J32							Not Qualified			1572864 bit				e0			NOR TYPE	.0001 Amp			120 ns		NO
M28F220-70YN1TR	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE, THIN PROFILE		16			.5 mm	70 Cel			256KX8	256K	0 Cel					DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	12
M29W640DB90N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			4MX16	4M	-40 Cel	8,127	YES	Tin/Lead (Sn/Pb)	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm	YES	90 ns	3	YES
M45PE20-VMN6TG	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		15 mA	262144 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel			256KX8	256K	-40 Cel			NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	33 MHz	3.9 mm	Not Qualified	SPI		2097152 bit	2.7 V			e4			NOR TYPE	.00001 Amp	4.9 mm			2.7
M28F1001-20XB112	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE					2.54 mm	70 Cel		3-STATE	128KX8	128K	0 Cel					DUAL		R-PDIP-T32		5.25 V				15.24 mm	Not Qualified			1048576 bit	4.75 V	100 ERASE/PROGRAM CYCLES					NOR TYPE				200 ns	12
M29W320DT70N1T	STMicroelectronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel			2MX16	2M	0 Cel	1,2,1,63	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		TOP	33554432 bit	3 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M28W320ECB10N1T	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel			2MX16	2M	0 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		100 ns	3
M28F201-120XN6TR	STMicroelectronics	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			256KX8	256K	-40 Cel					DUAL		R-PDSO-G32		5.25 V	1.2 mm			8 mm	Not Qualified			2097152 bit	4.75 V						NOR TYPE		18.4 mm		120 ns	12
M29F002BB120N6T	STMicroelectronics	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G32		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M29F002BT55N3T	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	125 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G32		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified		TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		55 ns	5	YES
M29F200BB50MT3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel			128KX16	128K	-40 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL		R-PDSO-G44		5.5 V	3 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.5 mm		50 ns	5	YES
M28V430-150N3	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	60 mA	262144 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel			256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G48				10000 Write/Erase Cycles			Not Qualified		TOP	4194304 bit				e0			NOR TYPE	.000005 Amp			150 ns		NO
M29W800DXB45N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK					NOR TYPE	.0001 Amp	18.4 mm	YES	45 ns	3	YES
M28F220-60YN1TR	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE, THIN PROFILE		16			.5 mm	70 Cel			256KX8	256K	0 Cel					DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		60 ns	12
M28F411-60N3	STMicroelectronics	FLASH	AUTOMOTIVE	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	50 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	125 Cel			512KX8	512K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G40		5.5 V	1.2 mm	100000 Write/Erase Cycles		10 mm	Not Qualified		TOP	4194304 bit	4.5 V			e0			NOR TYPE	.0001 Amp	18.4 mm		60 ns	12	NO
M59DR032EA85ZF6	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	26 mA	2097152 words	2	YES	2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories		.75 mm	85 Cel			2MX16	2M	-40 Cel	8,63	YES	TIN LEAD		BOTTOM		S-PBGA-B48		2.2 V	1.2 mm			7 mm	Not Qualified		TOP	33554432 bit	1.8 V		4	e0			NOR TYPE	.000005 Amp	7 mm	YES	85 ns	1.8	YES
M29F200T-120N3TR	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		3-STATE	128KX16	128K	-40 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified		TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		120 ns	5	YES
M29W160BB120N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			1MX16	1M	-40 Cel	1,2,1,31	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		120 ns	2.7	YES
M28W160ECT90ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	46	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA46,6X8,30		Flash Memories		.75 mm	85 Cel			1MX16	1M	-40 Cel	8,31	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B46		3.6 V	1.2 mm			6.37 mm	Not Qualified		TOP	16777216 bit	2.7 V			e1			NOR TYPE	.000005 Amp	6.39 mm	YES	90 ns	3	NO
M28F102-200XK1TR	STMicroelectronics	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS			65536 words	5			16	CHIP CARRIER					1.27 mm	70 Cel		3-STATE	64KX16	64K	0 Cel					QUAD		S-PQCC-J44		5.25 V	4.57 mm			16.5862 mm	Not Qualified			1048576 bit	4.75 V						NOR TYPE		16.5862 mm		200 ns	12
M29W200BT70N1F	STMicroelectronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel			128KX16	128K	0 Cel	1,2,1,3	YES	TIN/TIN BISMUTH	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified		TOP	2097152 bit	2.7 V	TOP BOOT BLOCK		e3/e6	40	260	NOR TYPE	.0001 Amp	20 mm		70 ns	2.7	YES
M29F800AT55N3	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel			512KX16	512K	-40 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL		R-PDSO-G48				100000 Write/Erase Cycles			Not Qualified		TOP	8388608 bit				e0			NOR TYPE	.00015 Amp			55 ns		YES
M29F010B45K3E	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K	20 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	125 Cel			128KX8	128K	-40 Cel	8	YES	MATTE TIN		QUAD		R-PQCC-J32		5.5 V	3.56 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			1048576 bit	4.5 V			e3			NOR TYPE	.0001 Amp	13.97 mm		45 ns	5	YES
M29W040B70K6F	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	20 mA	524288 words	3.3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel			512KX8	512K	-40 Cel	8	YES	MATTE TIN		QUAD		R-PQCC-J32		3.6 V	3.56 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			4194304 bit	2.7 V			e3			NOR TYPE	.0001 Amp	13.97 mm		70 ns	2.7	YES
M28F410-80M3TR	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	35 mA	524288 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel			512KX8	512K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G44		5.5 V	2.62 mm	100000 Write/Erase Cycles		13.3 mm	Not Qualified		TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.00005 Amp	28.2 mm		80 ns	12	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.