STMicroelectronics Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M50FW080NB5P	STMicroelectronics	FLASH	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	1048576 words	3.3		NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		Flash Memories		.5 mm	85 Cel		1MX8	1M	-20 Cel	16	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified		8388608 bit	3 V			e3/e6	40	260	NOR TYPE	.0001 Amp	12.4 mm		11 ns	3	NO
M29W800DT70N1T	STMicroelectronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M28F220-90YN1	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	35 mA	262144 words	5		NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	16	Flash Memories		.5 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,1	YES	TIN LEAD		DUAL	R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		90 ns	12	NO
M28F210-70XN3	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	35 mA	131072 words	5		NO	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		128KX16	128K	-40 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G48			100000 Write/Erase Cycles		Not Qualified	TOP	2097152 bit				e0			NOR TYPE	.00005 Amp			70 ns		NO
M29W040B55NZ1F	STMicroelectronics	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	524288 words	3.3		YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		Flash Memories		.5 mm	70 Cel		512KX8	512K	0 Cel	8	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G32	3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	3 V			e3/e6	40	260	NOR TYPE	.0001 Amp	12.4 mm		55 ns	3	YES
M29F200BT90MT1F	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5		YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		128KX16	128K	0 Cel	1,2,1,3	YES		YES	DUAL	R-PDSO-G44	5.5 V	3 mm	100000 Write/Erase Cycles	12.6 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK			40	245	NOR TYPE	.0001 Amp	28.5 mm		90 ns	5	YES
M39208-10WNA5	STMicroelectronics	FLASH	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		20 mA	262144 words	3	EEPROM+FLASH		3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Other Memory ICs		.5 mm	85 Cel		256KX8	256K	-20 Cel			TIN LEAD		DUAL	R-PDSO-G32	3.6 V	1.2 mm		8 mm	Not Qualified		2097152 bit	2.7 V	ALSO CONTAINS 64 KBIT EEPROM MEMORY		e0			NOR TYPE	.000002 Amp	18.4 mm		100 ns	2.7
M28F411-60YN1	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5				8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		512KX8	512K	0 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	TOP	4194304 bit	4.5 V						NOR TYPE		18.4 mm		60 ns	12
M29F102B-90XK1	STMicroelectronics	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	50 mA	65536 words	5		YES	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories		1.27 mm	70 Cel		64KX16	64K	0 Cel	1,2,1,1	YES	TIN LEAD		QUAD	S-PQCC-J44	5.25 V	4.57 mm		16.5862 mm	Not Qualified	BOTTOM	1048576 bit	4.75 V	100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK; BLOCK ERASE		e0			NOR TYPE	.0001 Amp	16.5862 mm		90 ns	5	YES
M29W800T-120N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words			YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	16	Flash Memories		.5 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	8388608 bit	2.7 V			e0			NOR TYPE	.0001 Amp	18.4 mm		120 ns	3	YES
M28F151B-150N3	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			196608 words	5				8	SMALL OUTLINE, THIN PROFILE					.5 mm	125 Cel	3-STATE	192KX8	192K	-40 Cel					DUAL	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	BOTTOM	1572864 bit	4.5 V						NOR TYPE		18.4 mm		150 ns	12
M28V201-150K1	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL			20 mA	262144 words	3.3		NO	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel		256KX8	256K	0 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32					Not Qualified		2097152 bit				e0			NOR TYPE	.0001 Amp			150 ns		NO
M58BW032DB45T6T	STMicroelectronics	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,2K,16K		1048576 words	3.3		NO	3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	85 Cel		1MX32	1M	-40 Cel	4,8,62	YES			QUAD	R-PQFP-G80	3.6 V	3.4 mm		14 mm	Not Qualified	BOTTOM	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE; BOTTOM BOOT BLOCK	4				NOR TYPE	.0001 Amp	20 mm	YES	45 ns	3.3	NO
M29F800AB90M3TR	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5				16	SMALL OUTLINE		8			1.27 mm	125 Cel		512KX16	512K	-40 Cel					DUAL	R-PDSO-G44	5.5 V	2.62 mm		13.3 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK					NOR TYPE		28.2 mm		90 ns	5
M29W800AB90N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	20	.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	8388608 bit	3 V	20 YEARS DATA RETENTION; BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		90 ns	2.7	YES
M28F101-15N1	STMicroelectronics	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5		NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel		128KX8	128K	0 Cel		YES	TIN LEAD		DUAL	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE		e0			NOR TYPE	.0001 Amp	18.4 mm		150 ns	12	NO
M28F512-20C112	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL			50 mA	65536 words	5		NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel		64KX8	64K	0 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32			100 Write/Erase Cycles		Not Qualified		524288 bit				e0			NOR TYPE	.0001 Amp			200 ns		NO
M29W640DT70N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3.3				16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	70 Cel		4MX16	4M	0 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	67108864 bit	3 V	TOP BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	3
M29F002B-70K1	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5		YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	20	1.27 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,3	YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.455 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	20 YEAR DATA RETENTION; BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	13.995 mm		70 ns	5	YES
M29F016D70N1T	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	2097152 words	5		YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		2MX8	2M	0 Cel	32	YES	TIN/TIN BISMUTH	YES	DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified		16777216 bit	4.5 V			e3/e6	40	260	NOR TYPE	.00015 Amp	18.4 mm	YES	70 ns	5	YES
M29F400BB90M1	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5		YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		70 ns	5	YES
M30LW128D110ZE1T	STMicroelectronics	FLASH MODULE	COMMERCIAL	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		30 mA	8388608 words	3		NO	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	8	Flash Memories		.8 mm	70 Cel		8MX16	8M	0 Cel		YES	TIN LEAD		BOTTOM	R-PBGA-B88	3.6 V	1.4 mm		8 mm	Not Qualified		134217728 bit	2.7 V		4	e0			NOR TYPE	.00008 Amp	10 mm	YES	110 ns	3.3	NO
M28F411-120XN5TR	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5				8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		512KX8	512K	-20 Cel					DUAL	R-PDSO-G40	5.25 V	1.2 mm		10 mm	Not Qualified	TOP	4194304 bit	4.75 V	100000 PROGRAM/ERASE CYCLES; TOP BOOT BLOCK					NOR TYPE		18.4 mm		120 ns	12
M29W200BT70N6T	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	3.3		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES	TIN/TIN BISMUTH	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	2097152 bit	2.7 V	TOP BOOT BLOCK		e3/e6	NOT SPECIFIED	260	NOR TYPE	.0001 Amp	20 mm		70 ns	2.7	YES
M29F002BB45K3T	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5		YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	125 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	13.97 mm		45 ns	5	YES
M58BW016DB90ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3		NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B80	3.6 V	1.7 mm		10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	90 ns	3	NO
M29F002T-90XP6	STMicroelectronics	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			262144 words	5				8	IN-LINE					2.54 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel					DUAL	R-PDIP-T32	5.25 V	5.08 mm		15.24 mm	Not Qualified	TOP	2097152 bit	4.75 V	TOP BOOT BLOCK					NOR TYPE		41.91 mm		90 ns	5
M29W800AB90ZA5T	STMicroelectronics	FLASH	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3		YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	20	.8 mm	85 Cel		512KX16	512K	-20 Cel	1,2,1,15	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	BOTTOM	8388608 bit	3 V	20 YEARS DATA RETENTION; BOTTOM BOOT BLOCK		e1			NOR TYPE	.0001 Amp	9 mm		90 ns	2.7	YES
M29W800DT45ZA1	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3				16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	70 Cel		512KX16	512K	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B48	3.6 V	1.2 mm		6 mm	Not Qualified	TOP	8388608 bit	3 V	TOP BOOT BLOCK		e0			NOR TYPE		9 mm		45 ns	3
M29F002BNT120P3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5		YES	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	125 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES	MATTE TIN		DUAL	R-PDIP-T32	5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e3			NOR TYPE	.0001 Amp	41.91 mm		70 ns	5	YES
M29KW016E100M1T	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	256K	20 mA	1048576 words	3		YES	3/3.3	16	SMALL OUTLINE	SOP44,.63		Flash Memories		1.27 mm	70 Cel		1MX16	1M	0 Cel	8	YES	MATTE TIN		DUAL	R-PDSO-G44	3.6 V	2.62 mm		13.3 mm	Not Qualified		16777216 bit	2.7 V			e3			NOR TYPE	.0001 Amp	28.2 mm		100 ns	12	YES
M29F016D70N6F	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	2097152 words	5		YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel		2MX8	2M	-40 Cel	32	YES		YES	DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified		16777216 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00015 Amp	18.4 mm	YES	70 ns	5	YES
M58BF008D90T3	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			262144 words	5				32	FLATPACK					.8 mm	125 Cel		256KX32	256K	-40 Cel					QUAD	R-PQFP-G80	5.5 V	3.4 mm		14 mm	Not Qualified		8388608 bit	4.5 V						NOR TYPE		20 mm		90 ns	5
M29F200B-70N1TR	STMicroelectronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5		YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		128KX16	128K	0 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M50FLW040BN5TP	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		60 mA	524288 words	3.3		NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel		512KX8	512K	-20 Cel	8	YES		YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm		8 mm	Not Qualified		4194304 bit	3 V				NOT SPECIFIED	260	NOR TYPE	.0001 Amp	18.4 mm		11 ns	3	NO
M28F220-120XN1	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	35 mA	262144 words	5		NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	16	Flash Memories		.5 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,1	YES	TIN LEAD		DUAL	R-PDSO-G48	5.25 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	2097152 bit	4.75 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		120 ns	12	NO
M28W201-200K5	STMicroelectronics	FLASH	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL			30 mA	262144 words			NO	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel		256KX8	256K	-20 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32					Not Qualified		2097152 bit				e0			NOR TYPE	.0001 Amp			200 ns		NO
M28F201-120P3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5		NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	125 Cel		256KX8	256K	-40 Cel		YES	TIN LEAD		DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified		2097152 bit	4.5 V			e0			NOR TYPE	.0001 Amp	41.91 mm		120 ns	12	NO
M28F201-120XN1	STMicroelectronics	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5		NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel		256KX8	256K	0 Cel		YES	TIN LEAD		DUAL	R-PDSO-G32	5.25 V	1.2 mm		8 mm	Not Qualified		2097152 bit	4.75 V			e0			NOR TYPE	.0001 Amp	18.4 mm		120 ns	12	NO
M29F002BT90N1E	STMicroelectronics	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5		YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,3	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M29F002BNT55N1T	STMicroelectronics	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5		YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		55 ns	5	YES
M29F002BT45K6	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5		YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	13.97 mm		45 ns	5	YES
M58BW016DT80T3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3		NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES	TIN LEAD		QUAD	R-PQFP-G80	3.6 V	3.4 mm		14 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	20 mm	YES	80 ns	3	NO
M28F201-150K6TR	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			262144 words	5				8	CHIP CARRIER					1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel					QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified		2097152 bit	4.5 V						NOR TYPE		13.995 mm		150 ns	12
M29W040-150N5TR	STMicroelectronics	FLASH	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	3.3		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel	3-STATE	512KX8	512K	-20 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32	3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	2.7 V			e0			NOR TYPE	.000005 Amp	18.4 mm		150 ns	3	YES
M29W040-120K5TR	STMicroelectronics	FLASH	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	3.3		YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel	3-STATE	512KX8	512K	-20 Cel	8	YES	MATTE TIN		QUAD	R-PQCC-J32	3.6 V	3.56 mm	100000 Write/Erase Cycles	11.4554 mm	Not Qualified		4194304 bit	2.7 V			e3			NOR TYPE	.000005 Amp	13.65 mm		120 ns	3	YES
M29W640FB70ZA6	STMicroelectronics	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	20 mA	4194304 words			YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B48					Not Qualified	BOTTOM	67108864 bit			4/8				NOR TYPE	.0001 Amp		YES	70 ns		YES
M28W160B100N1T	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3.3		NO	3/3.3,3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		1MX16	1M	0 Cel	8,31	YES	TIN LEAD		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	16777216 bit	3 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm	YES	100 ns	12	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.