STMicroelectronics Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M29F002BT55K6T	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	13.97 mm		55 ns	5	YES
M29F002BNT90N3E	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	125 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M28F101-100XN1	STMicroelectronics	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel	3-STATE	128KX8	128K	0 Cel		YES	TIN LEAD		DUAL	R-PDSO-G32	5.25 V	1.2 mm		8 mm	Not Qualified		1048576 bit	4.75 V			e0			NOR TYPE	.00005 Amp	18.4 mm		100 ns	12	NO
M29W040-100N1TR	STMicroelectronics	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32	3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	3 V			e0			NOR TYPE	.000005 Amp	18.4 mm		100 ns	3	YES
M58BW016BT90ZA3	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B80	3.6 V	1.7 mm		10 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	90 ns	3	NO
M29F400B-150M1TR	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE		16			1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel					DUAL	R-PDSO-G44	5.5 V	2.62 mm		13.3 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V						NOR TYPE		28.2 mm		150 ns	5
M28W640CB80ZB6	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	4194304 words	3.3	NO	3,3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories		.75 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B48	3.6 V	1.2 mm		6.39 mm	Not Qualified	BOTTOM	67108864 bit	3 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.000005 Amp	10.5 mm	YES	80 ns	3	NO
M29F100B-90XN3TR	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		128KX8	128K	-40 Cel	1,2,1,1	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	5.25 V	1.2 mm		12 mm	Not Qualified	BOTTOM	1048576 bit	4.75 V	CONFG AS 64K X 16; BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		90 ns	5	YES
M29W160BT120ZA1T	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3.3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	70 Cel		1MX16	1M	0 Cel	1,2,1,31	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm		8 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	9 mm		120 ns	2.7	YES
M29W800B-120M1	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words		YES	3/3.3	8	SMALL OUTLINE	SOP44,.63	16	Flash Memories		1.27 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL	R-PDSO-G44	3.6 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V			e3			NOR TYPE	.0001 Amp	28.2 mm		120 ns	3	YES
M28W320BB70N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3	NO	3,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		2MX16	2M	0 Cel	8,63	YES	TIN LEAD		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	NO
M29F040B45N6E	STMicroelectronics	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel		512KX8	512K	-40 Cel	8	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	4.5 V			e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		45 ns	5	YES
M28F151B-70N1	STMicroelectronics	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			196608 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel	3-STATE	192KX8	192K	0 Cel					DUAL	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	BOTTOM	1572864 bit	4.5 V						NOR TYPE		18.4 mm		70 ns	12
M29F010B90N3T	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20		Flash Memories		.5 mm	125 Cel		128KX8	128K	-40 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		1048576 bit	4.5 V			e0			NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M29W400T-120ZA6TR	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		512KX8	512K	-40 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	TOP	4194304 bit	2.7 V	CONFG AS 256K X 16; TOP BOOT BLOCK		e1			NOR TYPE	.00005 Amp	9 mm		120 ns	3	YES
M29W128FL60ZA6	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	256	YES		YES	BOTTOM	S-PBGA-B64					Not Qualified		134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	60 ns		YES
M29F002BNB120N1F	STMicroelectronics	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,3	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M58BW032BB60ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		1MX32	1M	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80	3.6 V	1.7 mm		10 mm	Not Qualified	BOTTOM	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE; BOTTOM BOOT BLOCK	4				NOR TYPE	.0001 Amp	12 mm	YES	60 ns	3.3	NO
M28F256-90B1TR	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE					2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel					DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified		262144 bit	4.5 V						NOR TYPE		41.91 mm		90 ns	12
M28F256-90XB1TR	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE					2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel					DUAL	R-PDIP-T32	5.25 V	5.08 mm		15.24 mm	Not Qualified		262144 bit	4.75 V						NOR TYPE		41.91 mm		90 ns	12
M28W160CT100ZB1E	STMicroelectronics	FLASH	COMMERCIAL	46	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.75 mm	70 Cel		1MX16	1M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B46	3.6 V	1.2 mm		6.37 mm	Not Qualified	TOP	16777216 bit	2.7 V			e1			NOR TYPE		6.39 mm		100 ns	3
M28F101-150XK3	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32	5.25 V	3.56 mm		11.455 mm	Not Qualified		1048576 bit	4.75 V			e0			NOR TYPE	.00005 Amp	13.995 mm		150 ns	12	NO
M28F1001-15XB312	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE					2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel					DUAL	R-PDIP-T32	5.25 V			15.24 mm	Not Qualified		1048576 bit	4.75 V	100 ERASE/PROGRAM CYCLES					NOR TYPE				150 ns	12
M29KW016E110M1	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	256K	20 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63		Flash Memories		1.27 mm	70 Cel		1MX16	1M	0 Cel	8	YES	MATTE TIN		DUAL	R-PDSO-G44	3.6 V	2.62 mm		13.3 mm	Not Qualified		16777216 bit	2.7 V			e3			NOR TYPE	.0001 Amp	28.2 mm		110 ns	12	YES
M28F211-70YN5	STMicroelectronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel		256KX8	256K	-20 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G40			100 Write/Erase Cycles		Not Qualified	TOP	2097152 bit				e0			NOR TYPE	.000008 Amp			70 ns		NO
M29F200BB90M6	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G44	5.5 V	3 mm	100000 Write/Erase Cycles	12.6 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	28.5 mm		90 ns	5	YES
M29R800B-100M5TR	STMicroelectronics	FLASH	OTHER	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE		16			1.27 mm	85 Cel	3-STATE	1MX8	1M	-20 Cel					DUAL	R-PDSO-G44	3.6 V	2.62 mm		13.3 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V						NOR TYPE		28.2 mm		100 ns	3
M29F200B-70XN3RTR	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE, THIN PROFILE		16			.5 mm	125 Cel	3-STATE	256KX8	256K	-40 Cel					DUAL	R-PDSO-G48	5.25 V	1.2 mm		12 mm	Not Qualified	BOTTOM	2097152 bit	4.75 V						NOR TYPE		18.4 mm		70 ns	5
M59DR032C120N1T	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	1.8			16	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		2MX16	2M	0 Cel					DUAL	R-PDSO-G48	2.2 V	1.2 mm		12 mm	Not Qualified	TOP	33554432 bit	1.65 V						NOR TYPE		18.4 mm		120 ns	1.8
M28F210-120XN3TR	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	125 Cel		256KX8	256K	-40 Cel					DUAL	R-PDSO-G48	5.25 V	1.2 mm		12 mm	Not Qualified	TOP	2097152 bit	4.75 V	100000 PROGRAM/ERASE CYCLES; USER CONFIGURABLE AS 128K X 16; BLOCK ERASE; TOP BOOT BLOCK					NOR TYPE		18.4 mm		120 ns	12
M28F420-60N1	STMicroelectronics	FLASH	COMMERCIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	16	Flash Memories		.5 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G56	5.5 V	1.2 mm	100000 Write/Erase Cycles	14 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK; DEEP POWER DOWN; 100K ERASE/PROGRAM CYCLES		e0			NOR TYPE	.000005 Amp	18.4 mm		60 ns	12	NO
M28F151-120XN6	STMicroelectronics	FLASH	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL			30 mA	196608 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel		192KX8	192K	-40 Cel		YES	TIN LEAD		DUAL	R-PDSO-G32					Not Qualified		1572864 bit				e0			NOR TYPE	.0001 Amp			120 ns		NO
M59DR008F120ZB1T	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	40 mA	524288 words	1.8	YES	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories		.75 mm	70 Cel		512KX16	512K	0 Cel	8,15	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	S-PBGA-B48	2.2 V	1.35 mm		7 mm	Not Qualified	BOTTOM	8388608 bit	1.65 V		4	e1			NOR TYPE	.000005 Amp	7 mm	YES	120 ns	1.8	YES
M58BW016DT100T3FT	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES	TIN LEAD		QUAD	R-PQFP-G80	3.6 V	3.4 mm		14 mm	Not Qualified	TOP	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	20 mm	YES	100 ns	3	NO
M30W0R7000B1ZAQF	STMicroelectronics	FLASH	INDUSTRIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	45 mA	8388608 words	1.8	NO	1.8,1.8/2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-40 Cel	8, 255	YES			BOTTOM	R-PBGA-B88	2 V	1.2 mm		8 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4		NOT SPECIFIED	260	NOR TYPE	.000005 Amp	10 mm	YES	60 ns	1.8	NO
M28F411-60XN6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	50 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel		512KX8	512K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G40	5.25 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	TOP	4194304 bit	4.75 V			e0			NOR TYPE	.0001 Amp	18.4 mm		60 ns	12	NO
M29F400BT70M3T	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		70 ns	5	YES
M59DR032EA85ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	26 mA	2097152 words	2	YES	2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories		.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN LEAD		BOTTOM	R-PBGA-B48	2.2 V	1.35 mm		7 mm	Not Qualified	TOP	33554432 bit	1.8 V		4	e0			NOR TYPE	.000005 Amp	12 mm	YES	85 ns	1.8	YES
M28F210-100N3	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	35 mA	131072 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		128KX16	128K	-40 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G48			100000 Write/Erase Cycles		Not Qualified	TOP	2097152 bit				e0			NOR TYPE	.00005 Amp			100 ns		NO
M28W320EBB10ZB1T	STMicroelectronics	FLASH	COMMERCIAL	47	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3	NO	1.8/2.5,3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA47,6X8,30		Flash Memories		.75 mm	70 Cel		2MX16	2M	0 Cel	8,63	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B47	3.6 V	1.2 mm		6.37 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.000005 Amp	6.39 mm	YES	100 ns	3	NO
M29W160DB70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	85 Cel		1MX16	1M	-40 Cel			TIN/TIN BISMUTH		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	16777216 bit	3 V	BOTTOM BOOT BLOCK		e3/e6	NOT SPECIFIED	260	NOR TYPE		18.4 mm		70 ns	3
M28F101-200XK3	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32	5.25 V	3.56 mm		11.455 mm	Not Qualified		1048576 bit	4.75 V			e0			NOR TYPE	.00005 Amp	13.995 mm		200 ns	12	NO
M28F101-150XN3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel					DUAL	R-PDSO-G32	5.25 V	1.2 mm		8 mm	Not Qualified		1048576 bit	4.75 V						NOR TYPE		18.4 mm		150 ns	12
M29W160T100N6	STMicroelectronics
M29W800AB90M6	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	20	1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G44	3.6 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	8388608 bit	3 V	20 YEARS DATA RETENTION; BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	28.2 mm		90 ns	2.7	YES
M28F1001-20XF312	STMicroelectronics	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE, WINDOW					2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel					DUAL	R-GDIP-T32	5.25 V	5.72 mm		15.24 mm	Not Qualified		1048576 bit	4.75 V	100 ERASE/PROGRAM CYCLES					NOR TYPE		41.885 mm		200 ns	12
M29W641DU70ZA1E	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.8 mm	70 Cel		4MX16	4M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	3.6 V	1.2 mm		7 mm	Not Qualified		67108864 bit	3 V			e1			NOR TYPE		11 mm		70 ns	3
M59DR008F100N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	40 mA	524288 words	1.8	YES	1.8/2	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		512KX16	512K	0 Cel	8,15	YES	TIN LEAD		DUAL	R-PDSO-G48	2.2 V	1.2 mm		12 mm	Not Qualified	BOTTOM	8388608 bit	1.65 V		4	e0			NOR TYPE	.000005 Amp	18.4 mm	YES	100 ns	1.8	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.