STMicroelectronics Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M29W320DT70ZA1	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories		.8 mm	70 Cel			2MX16	2M	0 Cel	1,2,1,63	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm		7 mm	Not Qualified	TOP	33554432 bit	3 V	TOP BOOT BLOCK		e1			NOR TYPE	.0001 Amp	11 mm	YES	70 ns	3	YES
M28F102-200XN3TR	STMicroelectronics	FLASH	AUTOMOTIVE	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	5			16	SMALL OUTLINE, THIN PROFILE					.5 mm	125 Cel		3-STATE	64KX16	64K	-40 Cel					DUAL	R-PDSO-G40	5.25 V	1.2 mm		10 mm	Not Qualified		1048576 bit	4.75 V						NOR TYPE		12.4 mm		200 ns	12
M29F400B-55M3R	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			16	SMALL OUTLINE		8			1.27 mm	125 Cel			256KX16	256K	-40 Cel					DUAL	R-PDSO-G44	5.5 V	2.62 mm		13.3 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK					NOR TYPE		28.2 mm		55 ns	5
M29W320EB90ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel			2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm		6 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.0001 Amp	8 mm	YES	90 ns	3	YES
M50LPW80N5	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			1MX8	1M	-20 Cel			TIN LEAD		DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified		8388608 bit	3 V			e0			NOR TYPE		18.4 mm		11 ns	3
M29F002T-70XK1TR	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			262144 words	5			8	CHIP CARRIER					1.27 mm	70 Cel		3-STATE	256KX8	256K	0 Cel					QUAD	R-PQCC-J32	5.25 V	3.56 mm		11.455 mm	Not Qualified	TOP	2097152 bit	4.75 V	TOP BOOT BLOCK					NOR TYPE		13.995 mm		70 ns	5
M29F040B90P1T	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			524288 words	5			8	IN-LINE					2.54 mm	70 Cel			512KX8	512K	0 Cel					DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified		4194304 bit	4.5 V						NOR TYPE		41.91 mm		70 ns	5
M29F200B-90N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		3-STATE	128KX16	128K	0 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		90 ns	5	YES
M28F410-120YM6	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE		16			1.27 mm	85 Cel			512KX8	512K	-40 Cel					DUAL	R-PDSO-G44	5.5 V	2.62 mm		13.3 mm	Not Qualified	TOP	4194304 bit	4.5 V						NOR TYPE		28.2 mm		120 ns	12
M29W800DT90ZA1F	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	70 Cel			512KX16	512K	0 Cel	1,2,1,15	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm		6 mm	Not Qualified	TOP	8388608 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.0001 Amp	9 mm	YES	90 ns	3	YES
M29W400DT55N1E	STMicroelectronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel			256KX16	256K	0 Cel	1,2,1,7	YES	TIN/TIN BISMUTH	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	4194304 bit	2.7 V	TOP BOOT BLOCK		e3/e6	NOT SPECIFIED	260	NOR TYPE	.0001 Amp	18.4 mm		55 ns	3	YES
M28F420-70WN1	STMicroelectronics	FLASH	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	60 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	70 Cel			256KX16	256K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G56			100000 Write/Erase Cycles		Not Qualified	BOTTOM	4194304 bit				e0			NOR TYPE	.000005 Amp			70 ns		NO
M29F200T-55N1R	STMicroelectronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel	YES		128KX16	128K	0 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		55 ns	5	YES
M29R008T-150N1TR	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words				8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		3-STATE	1MX8	1M	0 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified		8388608 bit	2.7 V						NOR TYPE		18.4 mm		150 ns	3
M28W160ECT85N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	70 Cel			1MX16	1M	0 Cel			TIN		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	16777216 bit	2.7 V			e3			NOR TYPE		18.4 mm		85 ns	3
M28W160ECT90N1T	STMicroelectronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	70 Cel			1MX16	1M	0 Cel			TIN		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	16777216 bit	2.7 V			e3			NOR TYPE		18.4 mm		90 ns	3
M28F201-150XK3	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	125 Cel			256KX8	256K	-40 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32	5.25 V	3.56 mm		11.455 mm	Not Qualified		2097152 bit	4.75 V			e0			NOR TYPE	.0001 Amp	13.995 mm		150 ns	12	NO
M28V430-150N3TR	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	125 Cel			512KX8	512K	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	4194304 bit	3 V	10000 PROGRAM/ERASE CYCLES; BLOCK ERASE; USER CONFIGURABLE AS 256K X 16					NOR TYPE		18.4 mm		150 ns	12
M28F211-80N1TR	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel			256KX8	256K	0 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	TOP	2097152 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; BLOCK ERASE; TOP BOOT BLOCK					NOR TYPE		18.4 mm		80 ns	12
M29F400T-90M1	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		90 ns	5	YES
M29F002BNB55K1T	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel			256KX8	256K	0 Cel	1,2,1,3	YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	13.97 mm		55 ns	5	YES
M29W800T-150M5R	STMicroelectronics	FLASH	OTHER	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words				8	SMALL OUTLINE		16			1.27 mm	85 Cel			1MX8	1M	-20 Cel					DUAL	R-PDSO-G44	3.6 V	2.62 mm		13.3 mm	Not Qualified	TOP	8388608 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		28.2 mm		150 ns	3
M58WR064FB80ZB6E	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	50 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel			4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B56	2 V	1 mm		7.7 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e1			NOR TYPE	.000005 Amp	9 mm	YES	80 ns	1.8	NO
M28W160CT90ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	46	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3	NO	3,3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA46,6X8,30		Flash Memories		.75 mm	85 Cel			1MX16	1M	-40 Cel	8,31	YES	TIN LEAD		BOTTOM	R-PBGA-B46	3.6 V	1.2 mm		6.37 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	6.39 mm	YES	90 ns	3	NO
M29F200T-55M3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel			128KX16	128K	-40 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		55 ns	5	YES
M28W640ECT85N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	4194304 words	3.3	NO	3/3.3,3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel			4MX16	4M	0 Cel	8,127	YES	TIN LEAD		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	67108864 bit	3 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm	YES	85 ns	3	NO
M29F040-120XN3R	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	20	.5 mm	125 Cel	YES	3-STATE	512KX8	512K	-40 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32	5.25 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	4.75 V	100000 ERASE/PROGRAM CYCLES; 20 YEARS DATA RETENTION; BLOCK ERASE; BYTE PROGRAMMABLE		e0			NOR TYPE	.0001 Amp	18.4 mm		120 ns	5	YES
M29F040-70N3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	125 Cel		3-STATE	512KX8	512K	-40 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	4.5 V			e0			NOR TYPE	.00005 Amp	18.4 mm		70 ns	5	YES
M29W008AT90N5	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	100 mA	1048576 words	3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	20	.5 mm	85 Cel			1MX8	1M	-20 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	TOP	8388608 bit	2.7 V	20 YEARS DATA RETENTION; TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		90 ns	2.7	YES
M29F102BB45K1E	STMicroelectronics	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	20 mA	65536 words	5	YES	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories		1.27 mm	70 Cel			64KX16	64K	0 Cel	1,2,1,1	YES			QUAD	S-PQCC-J44	5.5 V	4.57 mm		16.585 mm	Not Qualified	BOTTOM	1048576 bit	4.5 V	BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.586 mm		45 ns	5	YES
M28W160ECB70ZB6	STMicroelectronics	FLASH	INDUSTRIAL	46	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA46,6X8,30		Flash Memories		.75 mm	85 Cel			1MX16	1M	-40 Cel	8,31	YES	TIN LEAD		BOTTOM	R-PBGA-B46	3.6 V	1.2 mm		6.37 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V			e0			NOR TYPE	.000005 Amp	6.39 mm	YES	70 ns	3	NO
M29F016D90M6F	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	2097152 words	5	YES	5	8	SMALL OUTLINE	SOP44,.63		Flash Memories		1.27 mm	85 Cel			2MX8	2M	-40 Cel	32	YES	MATTE TIN/NICKEL PALLADIUM GOLD	YES	DUAL	R-PDSO-G44	5.5 V	2.8 mm		13.3 mm	Not Qualified		16777216 bit	4.5 V			e3/e4	40	245	NOR TYPE	.00015 Amp	28.2 mm	YES	90 ns	5	YES
M29W320EB90N6T	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			2MX16	2M	-40 Cel	8,63	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V			e0			NOR TYPE	.0001 Amp	18.4 mm	YES	90 ns	3	YES
M29W200BB70M6	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	3.3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel			128KX16	128K	-40 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	3.6 V	2.8 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	2097152 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		70 ns	2.7	YES
M29W640FB70ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel			4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm		6 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V		4/8	e1			NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
M29W400T-90N5R	STMicroelectronics	FLASH	OTHER	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	YES		256KX16	256K	-20 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	4194304 bit	3 V	CONFG AS 256K X 16; TOP BOOT BLOCK		e0			NOR TYPE	.00005 Amp	18.4 mm		90 ns	3	YES
M29F002BT120N6T	STMicroelectronics	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M29F400BB70MT3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel			256KX16	256K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	3 mm	100000 Write/Erase Cycles	12.6 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.5 mm		70 ns	5	YES
M59DR032EB85ZB6	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	26 mA	2097152 words	2	YES	2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories		.75 mm	85 Cel			2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn63Pb37)		BOTTOM	R-PBGA-B48	2.2 V	1.35 mm		7 mm	Not Qualified	BOTTOM	33554432 bit	1.8 V		4	e0			NOR TYPE	.000005 Amp	12 mm	YES	85 ns	1.8	YES
M58CR064D90ZB6	STMicroelectronics	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	30 mA	4194304 words	1.8	NO	1.8/2,1.8/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel			4MX16	4M	-40 Cel	8,127	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B56	2 V	1.2 mm		6.5 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e1			NOR TYPE	.000005 Amp	10 mm	YES	90 ns	1.8	NO
M28F410-80XM6TR	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	35 mA	524288 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel			512KX8	512K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G44	5.25 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	4194304 bit	4.75 V	TOP BOOT BLOCK		e0			NOR TYPE	.000008 Amp	28.2 mm		80 ns	12	NO
M29F400T-90XN3R	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE, THIN PROFILE		16			.5 mm	125 Cel		3-STATE	512KX8	512K	-40 Cel					DUAL	R-PDSO-G48	5.25 V	1.2 mm		12 mm	Not Qualified	TOP	4194304 bit	4.75 V						NOR TYPE		18.4 mm		90 ns	5
M28W160BT100GB6T	STMicroelectronics	FLASH	INDUSTRIAL	46	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3	NO	1.8/2.5,3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories		.75 mm	85 Cel			1MX16	1M	-40 Cel	8,31	YES	TIN LEAD		BOTTOM	R-PBGA-B46	3.6 V	1 mm		6.37 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	6.39 mm	YES	100 ns	3	NO
M29F200T-90XN3	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE, THIN PROFILE		16			.5 mm	125 Cel			256KX8	256K	-40 Cel					DUAL	R-PDSO-G48	5.25 V	1.2 mm		12 mm	Not Qualified	TOP	2097152 bit	4.75 V						NOR TYPE		18.4 mm		90 ns	5
M28F211-80XN1TR	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel			256KX8	256K	0 Cel					DUAL	R-PDSO-G40	5.25 V	1.2 mm		10 mm	Not Qualified	TOP	2097152 bit	4.75 V	100000 PROGRAM/ERASE CYCLES; BLOCK ERASE; TOP BOOT BLOCK					NOR TYPE		18.4 mm		80 ns	12
M29F002BT55N6T	STMicroelectronics	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		55 ns	5	YES
M29F002BNB45N3F	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	125 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		45 ns	5	YES
M29F002BNB90N1E	STMicroelectronics	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel			256KX8	256K	0 Cel	1,2,1,3	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.