STMicroelectronics Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M29F016D90M1	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	2097152 words	5	YES	5	8	SMALL OUTLINE	SOP44,.63		Flash Memories		1.27 mm	70 Cel			2MX8	2M	0 Cel	32	YES	MATTE TIN	YES	DUAL	R-PDSO-G44		5.5 V	2.8 mm		13.3 mm	Not Qualified		16777216 bit	4.5 V			e3			NOR TYPE	.00015 Amp	28.2 mm	YES	90 ns	5	YES
M29F100BT45M6T	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	65536 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel			64KX16	64K	-40 Cel	1,2,1,1	YES	TIN LEAD	YES	DUAL	R-PDSO-G44		5.5 V	2.62 mm		13.3 mm	Not Qualified	TOP	1048576 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		45 ns	5	YES
M28F512-10C1TR	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			65536 words	5			8	CHIP CARRIER					1.27 mm	70 Cel		3-STATE	64KX8	64K	0 Cel					QUAD	R-PQCC-J32		5.5 V	3.56 mm		11.455 mm	Not Qualified		524288 bit	4.5 V						NOR TYPE		13.995 mm		10 ns	12
M28W800CT85N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	524288 words	3	NO	3,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel			512KX16	512K	0 Cel	8,15	YES	TIN LEAD		DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm	YES	85 ns	3	NO
M28F210-120M6	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	35 mA	131072 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel			128KX16	128K	-40 Cel	1,2,1,1	YES	TIN LEAD		DUAL	R-PDSO-G44				100000 Write/Erase Cycles		Not Qualified	TOP	2097152 bit				e0			NOR TYPE	.000008 Amp			120 ns		NO
M58CR064D100ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	30 mA	4194304 words	1.8	NO	1.8,1.8/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel			4MX16	4M	-40 Cel	8,127	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B56		2 V	1.2 mm		6.5 mm	Not Qualified	BOTTOM	67108864 bit	1.65 V		4	e1			NOR TYPE	.000005 Amp	10 mm	YES	14 ns	1.8	NO
M28F420-120N6TR	STMicroelectronics	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			512KX8	512K	-40 Cel					DUAL	R-PDSO-G56		5.5 V	1.2 mm		14 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; ALSO CONFIGURABLE AS 256K X 16; BLOCK ERASE; BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		120 ns	12
M29W800DXB70M1	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel			512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G44		3.6 V	2.8 mm		13.3 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm	YES	70 ns	3	YES
M29W800DXT70ZA1F	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	70 Cel			512KX16	512K	0 Cel	1,2,1,15	YES		YES	BOTTOM	R-PBGA-B48		3.6 V	1.2 mm		6 mm	Not Qualified	TOP	8388608 bit	2.7 V	TOP BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	9 mm	YES	70 ns	3	YES
M28W160BB90N6T	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel			1MX16	1M	-40 Cel	8,31	YES	TIN LEAD		DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.00005 Amp	18.4 mm	YES	90 ns	3	NO
M29W800B-120WA6	STMicroelectronics	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel			512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48				100000 Write/Erase Cycles		Not Qualified	BOTTOM	8388608 bit				e0			NOR TYPE	.0001 Amp			120 ns		YES
M29F016D70N1F	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	2097152 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel			2MX8	2M	0 Cel	32	YES	TIN/TIN BISMUTH	YES	DUAL	R-PDSO-G40		5.5 V	1.2 mm		10 mm	Not Qualified		16777216 bit	4.5 V			e3/e6	40	260	NOR TYPE	.00015 Amp	18.4 mm	YES	70 ns	5	YES
M29W008T-90N1TR	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel			1MX8	1M	0 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	TOP	8388608 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		90 ns	3	YES
M29F400B-70N6TR	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		3-STATE	256KX16	256K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M29F002BB55K1T	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel			256KX8	256K	0 Cel	1,2,1,3	YES	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	13.97 mm		55 ns	5	YES
M50FLW040BNB1TP	STMicroelectronics	FLASH	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	4K,64K	60 mA	524288 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		Flash Memories		.5 mm	70 Cel			512KX8	512K	0 Cel	48,5	YES		YES	DUAL	R-PDSO-G32		3.6 V	1.2 mm		8 mm	Not Qualified	TOP	4194304 bit	3 V				NOT SPECIFIED	260	NOR TYPE	.0001 Amp	12.4 mm		11 ns	3	NO
M59DR016C100ZB1	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	40 mA	1048576 words	1.8	YES	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories		.75 mm	70 Cel			1MX16	1M	0 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B48		2.2 V	1.35 mm		7 mm	Not Qualified	TOP	16777216 bit	1.65 V		4	e1			NOR TYPE	.000005 Amp	12 mm	YES	100 ns	1.8	YES
M29DW641F60ZE6F	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories		.8 mm	85 Cel			4MX16	4M	-40 Cel	16,126	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48		3.6 V	1.2 mm		6 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES	8	e1			NOR TYPE	.0001 Amp	8 mm	YES	60 ns	3	YES
M29F040-150XK3	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	125 Cel		3-STATE	512KX8	512K	-40 Cel	8	YES	TIN LEAD		QUAD	R-PQCC-J32		5.25 V	3.56 mm	100000 Write/Erase Cycles	11.455 mm	Not Qualified		4194304 bit	4.75 V			e0			NOR TYPE	.0001 Amp	13.995 mm		150 ns	5	YES
M28W160ECB100N6S	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			1MX16	1M	-40 Cel			TIN		DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e3			NOR TYPE		18.4 mm		100 ns	3
M28W800B120GB1	STMicroelectronics	FLASH	COMMERCIAL	45	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	524288 words		NO	1.65/2.2,3	16	GRID ARRAY, FINE PITCH	BGA45,6X8,30		Flash Memories		.75 mm	70 Cel			512KX16	512K	0 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45						Not Qualified	BOTTOM	8388608 bit				e0			NOR TYPE	.000005 Amp		YES	120 ns		NO
M29W400DB70ZE1	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	70 Cel			256KX16	256K	0 Cel	1,2,1,7	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48		3.6 V	1.2 mm		6 mm	Not Qualified	BOTTOM	4194304 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	8 mm		70 ns	3	YES
M28W160B120N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K,32K	20 mA	1048576 words		NO	1.65/2.2,3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel			1MX16	1M	-40 Cel	8,31	YES	TIN LEAD		DUAL	R-PDSO-G48						Not Qualified	BOTTOM	16777216 bit				e0			NOR TYPE	.000005 Amp		YES	120 ns		NO
M29W641DL12N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	32K	20 mA	4194304 words	3	YES	1.8,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel			4MX16	4M	-40 Cel	128	YES			DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.4 mm	YES	120 ns	3	YES
M29F100B-70XN6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	65536 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		3-STATE	64KX16	64K	-40 Cel	1,2,1,1	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		5.25 V	1.2 mm		12 mm	Not Qualified	BOTTOM	1048576 bit	4.75 V	CONFG AS 64K X 16; BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M28F151-90XN6	STMicroelectronics	FLASH	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL			30 mA	196608 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel			192KX8	192K	-40 Cel		YES	TIN LEAD		DUAL	R-PDSO-G32						Not Qualified		1572864 bit				e0			NOR TYPE	.0001 Amp			90 ns		NO
M28F256-12C1TR	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			32768 words	5			8	CHIP CARRIER					1.27 mm	70 Cel		3-STATE	32KX8	32K	0 Cel					QUAD	R-PQCC-J32		5.5 V	3.56 mm		11.455 mm	Not Qualified		262144 bit	4.5 V	1000 ERASE/PROGRAM CYCLES					NOR TYPE		13.995 mm		120 ns	12
M29F040-70XN1R	STMicroelectronics	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	20	.5 mm	70 Cel	YES	3-STATE	512KX8	512K	0 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32		5.25 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	4.75 V	100000 ERASE/PROGRAM CYCLES; 20 YEARS DATA RETENTION; BLOCK ERASE; BYTE PROGRAMMABLE		e0			NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M29F040-70N6	STMicroelectronics	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel		3-STATE	512KX8	512K	-40 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32		5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	4.5 V			e0			NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M58BW016DT80ZA6FT	STMicroelectronics	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel			512KX32	512K	-40 Cel	8,31	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B80		3.6 V	1.7 mm		10 mm	Not Qualified	TOP	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	80 ns	3	NO
M29F400T-120XN6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE, THIN PROFILE		16			.5 mm	85 Cel		3-STATE	512KX8	512K	-40 Cel					DUAL	R-PDSO-G48		5.25 V	1.2 mm		12 mm	Not Qualified	TOP	4194304 bit	4.75 V						NOR TYPE		18.4 mm		120 ns	5
M29W641DH70N6F	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			16	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			4MX16	4M	-40 Cel			TIN		DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		67108864 bit	3 V			e3			NOR TYPE		18.4 mm		70 ns	3
M28W320ECB70ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	47	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA47,6X8,30		Flash Memories		.75 mm	85 Cel			2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn63Pb37)		BOTTOM	R-PBGA-B47		3.6 V	1.2 mm		6.37 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	6.39 mm	YES	70 ns	3	NO
M29W102BT70N6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	20 mA	65536 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20		Flash Memories		.5 mm	85 Cel			64KX16	64K	-40 Cel	1,2,1,1	YES	TIN LEAD		DUAL	R-PDSO-G40		3.6 V	1.2 mm		10 mm	Not Qualified	TOP	1048576 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	12.4 mm		70 ns	2.7	YES
M29F200BB70N3E	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel			128KX16	128K	-40 Cel	1,2,1,3	YES	TIN/TIN BISMUTH	YES	DUAL	R-PDSO-G48		5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M29F200B-55N3R	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel	YES		128KX16	128K	-40 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		55 ns	5	YES
M29F800AT70N6T	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	8388608 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.00015 Amp	18.4 mm		70 ns	5	YES
M28W320BT90N6T	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel			2MX16	2M	-40 Cel	8,63	YES	TIN LEAD		DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	NO
M29W200BT55M1T	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	3.3	YES	3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel			128KX16	128K	0 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G44		3.6 V	2.8 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	2097152 bit	3 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		55 ns	3	YES
M29F400B-55N6RTR	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	YES		256KX16	256K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		55 ns	5	YES
M29F002B-120XK1	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			262144 words	5			8	CHIP CARRIER				20	1.27 mm	70 Cel			256KX8	256K	0 Cel					QUAD	R-PQCC-J32		5.25 V	3.56 mm		11.455 mm	Not Qualified	BOTTOM	2097152 bit	4.75 V	20 YEARS DATA RETENTION; 100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK					NOR TYPE		13.995 mm		120 ns	5
M29F040-90N6R	STMicroelectronics	FLASH	INDUSTRIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	20	.5 mm	85 Cel	YES	3-STATE	512KX8	512K	-40 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32		5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	4.5 V	100000 ERASE/PROGRAM CYCLES; 20 YEARS DATA RETENTION; BLOCK ERASE; BYTE PROGRAMMABLE		e0			NOR TYPE	.0001 Amp	18.4 mm		90 ns	5	YES
M29F400T-120XM6TR	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE		16			1.27 mm	85 Cel		3-STATE	512KX8	512K	-40 Cel					DUAL	R-PDSO-G44		5.25 V	2.62 mm		13.3 mm	Not Qualified	TOP	4194304 bit	4.75 V						NOR TYPE		28.2 mm		120 ns	5
M29KW064E100ZA1	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories		.8 mm	70 Cel			4MX16	4M	0 Cel	32	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48		3.6 V	1.2 mm		6 mm	Not Qualified		67108864 bit	2.7 V			e1			NOR TYPE	.0001 Amp	9 mm		100 ns	12	YES
M28V421-150N1	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		3-STATE	512KX8	512K	0 Cel					DUAL	R-PDSO-G40		3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	4194304 bit	3 V	10K ERASE/PROGRAM CYCLES					NOR TYPE		18.4 mm		150 ns	12
M29W004BT55N1T	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel			512KX8	512K	0 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	TOP	4194304 bit	3 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		55 ns	3	YES
M29W400DB45ZA1T	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	70 Cel			256KX16	256K	0 Cel	1,2,1,7	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48		3.6 V	1.2 mm		6 mm	Not Qualified	BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	9 mm		45 ns	3	YES
M29W400DB70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			256KX16	256K	-40 Cel	1,2,1,7	YES	TIN	YES	DUAL	R-PDSO-G48	1	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	4194304 bit	2.7 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.0001 Amp	18.4 mm		70 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.