Flash Memory

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S70GL02GS11FHV020	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	105 Cel		128MX16	128M	-40 Cel					BOTTOM			R-PBGA-B64	3	3.6 V	1.4 mm			11 mm					2147483648 bit	2.7 V								13 mm		110 ns	3
SDCIT2/16GBSP	Kingston Technology Company	FLASH CARD				RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD					17179869184 words	3.3			8	UNCASED CHIP						85 Cel		16GX8	16G	-40 Cel					UPPER			R-XUUC-N				30000 Write/Erase Cycles							137438953472 bit							SLC NAND TYPE					3.3
TS-RDC8K2	Transcend Information	USB FLASH DRIVE
W25Q16JWSNIQ	Winbond Electronics	FLASH																																																						NOT SPECIFIED	NOT SPECIFIED
W25Q40EWSNIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8 mA	4194304 words	1.8		1.8	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		4MX1	4M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		1.95 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm	Not Qualified		SPI		4194304 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0000075 Amp	4.85 mm			1.8
W25Q512JVFIM	Winbond Electronics	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			67108864 words	3			8	SMALL OUTLINE		1			1.27 mm	85 Cel		64MX8	64M	-40 Cel					DUAL			R-PDSO-G16		3.6 V	2.64 mm		133 MHz	7.49 mm					536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			10.31 mm			3
W25X40CLUXIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		15 mA	4194304 words	3		2.5/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		Flash Memories	20	.5 mm	85 Cel		4MX1	4M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	104 MHz	2 mm	Not Qualified		SPI		4194304 bit	2.7 V	IT ALSO OPERATES AT 2.3 V AT 80 MHZ			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	3 mm			2.7
AM29F002BT-55JF	Infineon Technologies	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	40 mA	262144 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6			10	1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	1,2,1,3	YES		YES	QUAD			R-PQCC-J32		5.25 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm				TOP	2097152 bit	4.75 V						NOR TYPE	.000005 Amp	13.97 mm		55 ns	5	YES
AM29F010B-55JI	Intel	FLASH		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6			20	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	8	YES			QUAD			R-PQCC-J32		5.5 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm		.000055 ms			1048576 bit	4.5 V						NOR TYPE	.000005 Amp	13.97 mm		55 ns	5	YES
AT49BV163D-70TU	Atmel	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	2.65 V			e3		260	NOR TYPE	.000025 Amp	18.4 mm	YES	70 ns	3	YES
DTX/64GB	Kingston Technology Company	USB FLASH DRIVE			XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED		ASYNCHRONOUS			68719476736 words				8	MICROELECTRONIC ASSEMBLY						60 Cel		64GX8	64G	0 Cel					UNSPECIFIED			R-XXMA-X			10.14 mm			21.04 mm					549755813888 bit		USB 3.2 FLASH DRIVE					NOR TYPE		67.3 mm
IS25LP016D-JLLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	2097152 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	1		20	1.27 mm	105 Cel	3-STATE	2MX8	2M	-40 Cel			Tin (Sn)		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		16777216 bit	2.3 V			e3			NOR TYPE	.00002 Amp	8 mm			3
IS25LP064D-JLLE-TR	Integrated Silicon Solution	FLASH																																	Tin (Sn)																				e3	30	260						3
IS25WP064A-RHLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		29 mA	8388608 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1		20	1 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE/SOFTWARE	S-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI		67108864 bit	1.65 V			e1	10	260	NOR TYPE	.000035 Amp	5 mm			1.8
M29W800DB70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN/TIN BISMUTH	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK		e3/e6	NOT SPECIFIED	260	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
MT29F16G08ADBCAH4:C	Micron Technology	FLASH	COMMERCIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		256K	20 mA	2147483648 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		2GX8	2G	0 Cel	8K	YES		YES	BOTTOM			R-PBGA-B63							Not Qualified				17179869184 bit			4K				SLC NAND TYPE	.00005 Amp			30 ns	1.8	NO
MTFC16GAPALNA-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B100		3.6 V	1.2 mm			14 mm					137438953472 bit	2.7 V			e1	30	260			18 mm			2.7
MX25L12845GM2I-08G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			4	SMALL OUTLINE		2			1.27 mm	85 Cel		32MX4	32M	-40 Cel			TIN		DUAL			R-PDSO-G8		3.6 V	2.16 mm		120 MHz	5.23 mm					134217728 bit	2.7 V	CAN BE ORGANISED AS 128 M X 1		e3					5.28 mm			3
S25FL064LABNFI011	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	85 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL			S-PDSO-N8	3	3.6 V	.6 mm		108 MHz	4 mm					67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH		e3					4 mm			3
S25FL256LAGBHI023	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		50 mA	33554432 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	2.7 V						NOR TYPE	.00006 Amp	8 mm			3
S25FL256SAGBHV200	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3		3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	105 Cel		64MX4	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI		268435456 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1		e1			NOR TYPE	.0003 Amp	8 mm			3
S25FL512SDSBHI210	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	64094208 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		512753664 bit	2.7 V			e1			NOR TYPE	.0003 Amp	8 mm			3
S25FS128SAGNFI100	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		100 mA	16777216 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			2	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI		134217728 bit	1.7 V			e3			NOR TYPE	.0003 Amp	6 mm			1.8
S25HL01GTDPBHV033	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		69 mA	134217728 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel		128MX8	128M	-40 Cel					BOTTOM		HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	2560000 Write/Erase Cycles	133 MHz	8 mm			SPI		1073741824 bit	2.7 V						NOR TYPE	.00056 Amp	8 mm			3
S29GL512S10GHI020	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1		2	.8 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM			R-PBGA-B56	3	3.6 V	1 mm	100000 Write/Erase Cycles		7 mm				BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1			NAND TYPE	.0001 Amp	9 mm	YES	100 ns	3	YES
S34ML04G200TFI000	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified				4294967296 bit	2.7 V		2K	e3		260	SLC NAND TYPE	.00005 Amp	18.4 mm		25 ns	3	NO
SDCS2/32GBCP	Kingston Technology Company	FLASH CARD			DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD					34359738368 words	3.3			8	UNCASED CHIP						85 Cel		32GX8	32G	-25 Cel					UPPER			R-XUUC-N											274877906944 bit							NOR TYPE					3.3
SFCF1024H1BK2MT-I-MO-553-SMA	Swissbit Ag	FLASH CARD	INDUSTRIAL	50	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS			1073741824 words	3.3			8	UNCASED CHIP						85 Cel		1GX8	1G	-40 Cel					UPPER			R-XUUC-N50		3.63 V	4.1 mm			36.4 mm					8589934592 bit	2.97 V	ALSO OPERATES AT 5V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		42.8 mm		300 ns	3.3
SST26WF080B-104I/MF	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS		25 mA	8388608 words	1.8			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			100	1.27 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm			SPI		8388608 bit	1.65 V			e3			NOR TYPE	.000005 Amp	6 mm			1.8
W25Q32JVTBIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			4194304 words	3.3			8	GRID ARRAY, THIN PROFILE		1			1 mm	85 Cel		4MX8	4M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					33554432 bit	3 V	2.7V NOMINAL AVAILABLE WITH 104MHZ		e1		260			8 mm			3
W25Q80EWSNIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	8388608 words	1.8		1.8	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		8MX1	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		1.95 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm	Not Qualified		SPI		8388608 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0000075 Amp	4.85 mm			1.8
AM29F032B-90EF	Spansion	FLASH	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	4194304 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel		4MX8	4M	-40 Cel	64	YES	MATTE TIN	YES	DUAL			R-PDSO-G40	3	5.5 V	1.2 mm			10 mm	Not Qualified				33554432 bit	4.5 V			e3	40	260	NOR TYPE	.000005 Amp	18.4 mm		90 ns	5	YES
AT25SF321B-SSHB-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		17 mA	4194304 words	3			8	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	108 MHz	3.9 mm			SPI		33554432 bit	2.7 V			e4		260	NOR TYPE	.000025 Amp	4.925 mm			3
EM32FQYHY-BA000-2	Delkin Devices	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		32GX8	32G	-40 Cel		NO			BOTTOM		HARDWARE	R-PBGA-B156			1 mm			11.5 mm					274877906944 bit							TLC NAND TYPE		13 mm			3.3	NO
GD25Q16CEIGR	Gigadevice Semiconductor	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		20 mA	2097152 words	3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20			20	.5 mm	85 Cel		2MX8	2M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.5 mm	100000 Write/Erase Cycles	120 MHz	2 mm			SPI		16777216 bit	2.7 V						NOR TYPE	.000005 Amp	3 mm			3.3
GD25Q16ETIGR	Gigadevice Semiconductor	FLASH		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	2097152 words	3.3			8	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel		2MX8	2M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	133 MHz	3.9 mm			SPI		16777216 bit	3 V	2.7V TO 3V @ 120 MHZ					NOR TYPE	.00004 Amp	4.9 mm			3.3
GD25Q32ESIGR	Gigadevice Semiconductor	FLASH		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	4194304 words	3.3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel		4MX8	4M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.23 mm			SPI		33554432 bit	3 V	2.7V TO 3V @ 120 MHZ					NOR TYPE	.00004 Amp	5.28 mm			3.3
IS25LP064A-JLLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			67108864 words	3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	105 Cel		64MX1	64M	-40 Cel					DUAL			R-PDSO-N8		3.6 V	.8 mm		133 MHz	6 mm					67108864 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
M25P128-VMF6TP	STMicroelectronics	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	16777216 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		16MX8	16M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	10000 Write/Erase Cycles	50 MHz	7.5 mm	Not Qualified		SPI		134217728 bit	2.7 V	MORE THAN 10000 ERASE/PROGRAM CYCLES MORE THAN 20-YEAR DATA RETENTION		e4			NOR TYPE	.0001 Amp	10.3 mm			2.7
MT25QU256ABA8ESF-0SITTR	Micron Technology	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		35 mA	33554432 words	1.8			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel		32MX8	32M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		2 V	2.65 mm	100000 Write/Erase Cycles	166 MHz	7.5 mm			SPI		268435456 bit	1.7 V				30	260	NOR TYPE	.000075 Amp	10.3 mm			1.8
MT29F128G08AJAAAWP-IT:A	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		1M	50 mA	17179869184 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		16GX8	16G	-40 Cel	16K	YES		YES	DUAL			R-PDSO-G48							Not Qualified				137438953472 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F2G01ABAGD12-AAT:G	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		35 mA	268435456 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			10	1 mm	105 Cel		256MX8	256M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		2147483648 bit	2.7 V						SLC NAND TYPE	.00005 Amp	8 mm			3.3
MT29F4G08ABBDAHC-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	536870912 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES	TIN SILVER COPPER	YES	BOTTOM			R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified				4294967296 bit	1.7 V		2K	e1	30	260	SLC NAND TYPE	.00005 Amp	13 mm		25 ns	1.8	NO
MTSD032AHC6MS-1WTCS	Micron Technology	FLASH CARD		8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			34359738368 words	3.3			8	UNCASED CHIP						85 Cel		32GX8	32G	-25 Cel					UPPER			R-XUUC-N8		3.6 V	1.1 mm		208 MHz	11 mm			SPI		274877906944 bit	2.7 V						TLC NAND TYPE		15 mm			3.3
N25Q128A13ESF40F	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	16777216 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI		134217728 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	10.3 mm			3
S25FL128SAGMFMG00	Infineon Technologies	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			4	SMALL OUTLINE		2			1.27 mm	125 Cel		32MX4	32M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G16	3	3.6 V	2.65 mm		133 MHz	7.5 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1		e3	30	260			10.3 mm			3
S29GL064S70FHI010	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	4194304 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		20	1 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	128		TIN SILVER COPPER	YES	BOTTOM			R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		11 mm					67108864 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm		70 ns	3	YES
S29GL128S10DHI010	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	16777216 words	3	YES	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX8	16M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM			S-PBGA-B64	3	3.6 V	1.4 mm			9 mm	Not Qualified				134217728 bit	2.7 V		16	e1	30	260	NOR TYPE	.0001 Amp	9 mm	YES	100 ns	2.7	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.