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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M29W800FT70ZA3SE	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		512KX16	512K	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm				TOP	8388608 bit	3 V	TOP BOOT BLOCK		e1					8 mm		70 ns	3
MT25QL01GBBA8E12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			2147483648 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		2GX1	2G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					2147483648 bit	2.7 V			e1	30	260	NOR TYPE		8 mm			3
MT28EW256ABA1HJS-0SIT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		16MX16	16M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G56	3	3.6 V	1.2 mm			14 mm					268435456 bit	2.7 V			e3	30	260	NOR TYPE		18.4 mm		70 ns	3
MT28GU01GAAA1EGC-0SIT	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		64MX16	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B64		2 V	1.2 mm			8 mm					1073741824 bit	1.7 V			e1					10 mm		96 ns	1.8
MT29F128G08AUCBBH3-12IT:B	Micron Technology	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		16GX8	16G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B100		3.6 V	1.4 mm			12 mm					137438953472 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm			2.7
MT29F128G08CECBBH1-10:B	Micron Technology	FLASH																																																							MLC NAND TYPE					3.3
MT29F32G08TAAWC-ET:B	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4294967296 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		4GX8	4G	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm					34359738368 bit	2.7 V						SLC NAND TYPE		18.4 mm			3.3
MT29F32G08TAAWC:B	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4294967296 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		4GX8	4G	0 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm					34359738368 bit	2.7 V						SLC NAND TYPE		18.4 mm			3.3
MT29F4G01AAADDHC:D	Micron Technology	FLASH	COMMERCIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			20 mA	536870912 words			3/3.3	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	10	.8 mm	70 Cel		512MX8	512M	0 Cel					BOTTOM	HARDWARE	R-PBGA-B63				100000 Write/Erase Cycles	50 MHz		Not Qualified		SPI		4294967296 bit							SLC NAND TYPE	.00005 Amp
MT29F512G08CUCABH3-12IT:A	Micron Technology	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		64GX8	64G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B100		3.6 V	1.4 mm			12 mm					549755813888 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm			2.7
MT29F64G08AECABH1-10:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	8589934592 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel		8GX8	8G	0 Cel	8K	YES		YES	BOTTOM		R-PBGA-B100							Not Qualified				68719476736 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F8G08ABCBBH1-12IT:B	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		512K	50 mA	1073741824 words	1.8	NO	1.8	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	85 Cel		1GX8	1G	-40 Cel	2K	YES		YES	BOTTOM		R-PBGA-B100							Not Qualified				8589934592 bit			4K				SLC NAND TYPE	.00005 Amp			20 ns		NO
MTFC16GJDEC-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	169	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA169,14X28,20				.5 mm	85 Cel		16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B169		3.6 V	.8 mm		52 MHz	14 mm					137438953472 bit	2.7 V			e1			MLC NAND TYPE		18 mm			3.3
MTFC64GAPALHT-AAT	Micron Technology
MTFC8GAMALHT-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40			5	1 mm	85 Cel		8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B100		3.6 V	1 mm		200 MHz	14 mm					68719476736 bit	2.7 V						NAND TYPE		18 mm
MX25L3206EMI-12G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3.3		3/3.3	2	SMALL OUTLINE	SOP16,.4	1	Flash Memories	20	1.27 mm	85 Cel		16MX2	16M	-40 Cel			TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	86 MHz	7.52 mm	Not Qualified		SPI		33554432 bit	2.7 V			e3			NOR TYPE	.00002 Amp	10.3 mm			3.3
MX25L8006EM1J-12G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	1048576 words	3			8	SMALL OUTLINE	SOP8,.25	1		20	1.27 mm	105 Cel		1MX8	1M	-40 Cel					DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm		86 MHz	3.9 mm			SPI		8388608 bit	2.7 V							.000025 Amp	4.9 mm			3
MX25R8035FBDIL0	Macronix	FLASH	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			2097152 words	1.8			4	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		2				85 Cel		2MX4	2M	-40 Cel					BOTTOM		R-PBGA-B8		3.6 V	.52 mm		104 MHz						8388608 bit	1.65 V	IT IS ALSO CONFIGURED AS 8M X 1			NOT SPECIFIED	NOT SPECIFIED						1.8
MX25U12832FZNJ02	Macronix	FLASH
MX25U25645GBFI00	Macronix
MX25U25645GMI00	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			33554432 words	1.8			8	SMALL OUTLINE		4			1.27 mm	85 Cel		32MX8	32M	-40 Cel					DUAL		R-PDSO-G16		2 V	2.65 mm		166 MHz	7.52 mm					268435456 bit	1.65 V	IT CAN ALSO BE CONFIGURED AS 128M X 2 AND 256M X 1							10.3 mm			1.8
MX25U51245GBFI0A	Macronix	FLASH		68	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		40 mA	67108864 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X10,20			20	.4 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B68		2 V	.44 mm	100000 Write/Erase Cycles	166 MHz				SPI		536870912 bit	1.65 V						NOR TYPE	.00005 Amp				1.8
MX25U51245GMI00	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		40 mA	67108864 words	1.8			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		2 V	2.65 mm	100000 Write/Erase Cycles	166 MHz	7.52 mm			SPI		536870912 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	10.3 mm			1.8
MX25UM51245GMI00	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			67108864 words	1.8			8	SMALL OUTLINE		1			1.27 mm	85 Cel		64MX8	64M	-40 Cel					DUAL		R-PDSO-G16		2 V	2.65 mm		133 MHz	7.52 mm					536870912 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED			10.3 mm			1.8
MX25UM51245GXDIH0	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, THIN PROFILE		1			1 mm	85 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24		2 V	1.2 mm		250 MHz	6 mm					536870912 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			1.8
MX25UM51345GBEI00	Macronix
MX25V1635FM2I/TR	Macronix	FLASH																																																					NOT SPECIFIED	NOT SPECIFIED						3
MX29F400CTTI-70G	Macronix	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	50 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	Tin (Sn)	YES	DUAL		R-PDSO-G48	3	5.5 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified	70 ms		TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e3			NOR TYPE	.000005 Amp	18.4 mm		70 ns	5	YES
N25Q064A13EF640F	Micron Technology	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		20 mA	1048576 words	3		3/3.3	64	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		1MX64	1M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.9 mm	100000 Write/Erase Cycles	108 MHz	5 mm	Not Qualified		SPI		67108864 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	6 mm			3
N25Q256A13ESFA0F	Micron Technology	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	268435456 words	3		3/3.3	1	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	125 Cel		256MX1	256M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI		268435456 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	10.3 mm			3
N25Q256A81ESF40G	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			268435456 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel		256MX1	256M	-40 Cel					DUAL		R-PDSO-G16		2 V	2.65 mm		108 MHz	7.5 mm					268435456 bit	1.7 V								10.3 mm			1.8
S25FL116K0XMFI010	Infineon Technologies	FLASH		8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	2097152 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.28 mm			SPI		16777216 bit	2.7 V						NOR TYPE	.000005 Amp	5.28 mm			3
S25FL116K0XNFI010	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	4194304 words	3		3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	2	Flash Memories	20	1.27 mm	85 Cel		4MX4	4M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	108 MHz	5 mm	Not Qualified		SPI		16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1		e3			NOR TYPE	.000005 Amp	6 mm			3
S25FL129P0XBHI200	Infineon Technologies	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		38 mA	16777216 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm		50 ms	SPI		134217728 bit	2.7 V						NOR TYPE	.00001 Amp	8 mm			3
S25FL129P0XMFI001	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		38 mA	16777216 words	3			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.5 mm		50 ms	SPI		134217728 bit	2.7 V						NOR TYPE	.00001 Amp	10.3 mm			3
S25FL129P0XMFI010	Cypress Semiconductor	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		38 mA	16777216 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		16MX8	16M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.3 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.5 mm	Not Qualified	50 ms	SPI		134217728 bit	2.7 V			e3	40	260	NOR TYPE	.00001 Amp	10.3 mm			3
S25FL256SAGBHI300	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3		3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	2	Flash Memories	20	1 mm	85 Cel		64MX4	64M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1					NOR TYPE	.0001 Amp	8 mm			3
S25HS02GTDPBHV150	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		110 mA	268435456 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1.2 mm	300000 Write/Erase Cycles	166 MHz	8 mm			SPI		2147483648 bit	1.7 V						NOR TYPE	.00045 Amp	8 mm			1.8
S26KS512SDABHB030	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, VERY THIN PROFILE					1 mm	105 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24	3	2 V	1 mm			6 mm					536870912 bit	1.7 V								8 mm		96 ns	1.8
S29AL016J70TFN020	Infineon Technologies	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
S29GL01GS10DHA013	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3			8	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM		S-PBGA-B64	3	3.6 V	1.4 mm			9 mm					1073741824 bit	2.7 V			e1	30	260			9 mm		100 ns	3
S29GL01GS10FHI010	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		11 mm					1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	13 mm	YES	100 ns	3	YES
S29GL512S11DHI010	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	67108864 words	3	YES	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		64MX8	64M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM		S-PBGA-B64	3	3.6 V	1.4 mm			9 mm	Not Qualified				536870912 bit	2.7 V		16	e1	30	260	NOR TYPE	.0001 Amp	9 mm	YES	110 ns	2.7	YES
S29GL512S11TFI010	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	80 mA	67108864 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		64MX8	64M	-40 Cel	512	YES	MATTE TIN	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm			14 mm	Not Qualified				536870912 bit	2.7 V		16	e3			NOR TYPE	.0001 Amp	18.4 mm	YES	110 ns	2.7	YES
S29GL512T10TFA010	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		32MX16	32M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G56	3	3.6 V	1.2 mm			14 mm					536870912 bit	2.7 V			e3					18.4 mm		100 ns	2.7
S34ML08G201TFI003	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	256K	30 mA	1073741824 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		1GX8	1G	-40 Cel	4K	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified				8589934592 bit	2.7 V		2K	e3		260	SLC NAND TYPE	.00005 Amp	18.4 mm			3	NO
SDSDQAD-200G	Western Digital	FLASH CARD
SDSDQAD-256G	Western Digital	FLASH CARD

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.