Flash Memory

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
W25Q512NWFIQ	Winbond Electronics	EEPROM
W25X05CLUXIGTR	Winbond Electronics	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		12 mA	65536 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20			20	.5 mm	85 Cel		64KX8	64K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	104 MHz	2 mm			SPI		524288 bit	2.3 V						NOR TYPE	.00005 Amp	3 mm			3
W29N01GVSIAA	Winbond Electronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		128MX8	128M	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm					1073741824 bit	2.7 V						SLC NAND TYPE		18.4 mm			3.3
W29N01HZBINA	Winbond Electronics	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm					1073741824 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm			1.8
ACT-F512K8N-070P4Q	Cobham Plc	FLASH MODULE	MILITARY	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5	YES	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6		Flash Memories		2.54 mm	125 Cel		512KX8	512K	-55 Cel	8	YES			DUAL		R-CDMA-T32		5.5 V		100000 Write/Erase Cycles			Not Qualified				4194304 bit	4.5 V	100K ERASE/PROGRAM CYCLES					NOR TYPE	.0016 Amp			70 ns	5	YES
AM29F010B-70JC	Spansion	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	16K	40 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel		128KX8	128K	0 Cel	8	YES	TIN LEAD		QUAD		R-PQCC-J32	3	5.5 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified				1048576 bit	4.5 V			e0		240	NOR TYPE	.000005 Amp	13.97 mm		70 ns	5	YES
AM29F160DB70EF	Spansion	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	50 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	5.5 V	1.2 mm			12 mm	Not Qualified	70 ms		BOTTOM	16777216 bit	4.5 V	MIN 1000K WRITE CYCLE; CAN ALSO BE CONFG AS 2M X 8; BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	5	YES
AM29F160DB70EI	Spansion	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	50 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN LEAD	YES	DUAL		R-PDSO-G48	3	5.5 V	1.2 mm			12 mm	Not Qualified	70 ms		BOTTOM	16777216 bit	4.5 V	MIN 1000K WRITE CYCLE; CAN ALSO BE CONFG AS 2M X 8; BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	5	YES
AM29F400BB-70EC	Spansion	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL		R-PDSO-G48	3	5.5 V	1.2 mm	1000000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.000005 Amp	18.4 mm		70 ns	5	YES
AM29F800BB-70ED	Spansion	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	5.5 V	1.2 mm	1000000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.001 Amp	18.4 mm		70 ns	5	YES
AM29F800BB-90ECT	Advanced Micro Devices	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			16	SMALL OUTLINE, THIN PROFILE		8		20	.5 mm	70 Cel		512KX16	512K	0 Cel					DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	MINIMUM 1,000,000 PROGRAM/ERASE CYCLES PER SECTOR; 20-YEAR DATA RETENTION; BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		90 ns	5
AM29F800BB-90EC\T	Spansion	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			16	SMALL OUTLINE, THIN PROFILE		8		20	.5 mm	70 Cel		512KX16	512K	0 Cel			TIN LEAD		DUAL		R-PDSO-G48	3	5.5 V	1.2 mm			12 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	MINIMUM 1,000,000 PROGRAM/ERASE CYCLES PER SECTOR; 20-YEAR DATA RETENTION; BOTTOM BOOT BLOCK		e0			NOR TYPE		18.4 mm		90 ns	5
AM29LV160DB120EI	Advanced Micro Devices	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	Tin/Lead (Sn/Pb)	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V	MIN 1000K WRITE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm	YES	120 ns	3	YES
AM29LV160DB-120EI	Spansion	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN LEAD	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.000005 Amp	18.4 mm	YES	120 ns	3	YES
AM29LV160DT-70EC	Spansion	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		1MX16	1M	0 Cel	1,2,1,31	YES	TIN LEAD	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e0		260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
AM29LV160DT70EC	Advanced Micro Devices	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		1MX16	1M	0 Cel	1,2,1,31	YES	Tin/Lead (Sn/Pb)	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			TOP	16777216 bit	2.7 V	MIN 1000K WRITE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
AM29LV641DH90REI	Spansion	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	32K	30 mA	4194304 words	3.3	YES	3.3,3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	TIN LEAD		DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM/TOP	67108864 bit	3 V			e0		260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	YES
AP-MSD08GIA-1HTM	Apacer Technology	FLASH CARD		8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			8589934592 words				8	UNCASED CHIP						85 Cel		8GX8	8G	-40 Cel					UPPER		R-XUUC-N8		3.6 V	1.1 mm		208 MHz	11 mm			SPI		68719476736 bit	2.7 V						MLC NAND TYPE		15 mm
AT17F080-30CU	Microchip Technology	FLASH																																	NICKEL GOLD					3						Not Qualified								e4	40	260
AT17F16-30JU	Microchip Technology	FLASH																																	MATTE TIN											Not Qualified								e3
AT17F16A-30CU	Microchip Technology	CONFIGURATION MEMORY		8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3.3			1	SMALL OUTLINE	SOLCC8,.24				1.27 mm	85 Cel		16MX1	16M	-40 Cel			NICKEL GOLD		DUAL		S-XDSO-N8	3	3.63 V	1.14 mm	10000 Write/Erase Cycles	10 MHz	5.99 mm	Not Qualified				16777216 bit	2.97 V			e4	40	260	NOR TYPE	.003 Amp	5.99 mm			3.3
AT17F16A-30JU	Microchip Technology	CONFIGURATION MEMORY		20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3.3			1	CHIP CARRIER	LDCC20,.4SQ				1.27 mm	85 Cel		16MX1	16M	-40 Cel			MATTE TIN	YES	QUAD		R-PQCC-J20		3.63 V	4.572 mm	10000 Write/Erase Cycles	10 MHz	8.966 mm	Not Qualified				16777216 bit	2.97 V			e3			NOR TYPE	.003 Amp	8.966 mm			3.3
AT25DN256-XMHF-B	Renesas Electronics	FLASH	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			262144 words	3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		256KX1	256K	-40 Cel					DUAL		R-PDSO-G8	1	3.6 V	1.2 mm		104 MHz	3 mm					262144 bit	2.3 V								4.4 mm			3
AT25SL321-UUE-T	Renesas Electronics	FLASH	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		25 mA	4194304 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,2X4,20			20	.5 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B8	1	2 V	.52 mm	100000 Write/Erase Cycles	104 MHz	1.551 mm			SPI		33554432 bit	1.7 V						NOR TYPE	.00005 Amp	2.284 mm			1.8
AT25XE041B-XMHN-B	Renesas Electronics	FLASH	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			4194304 words	1.8			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		4MX1	4M	-40 Cel					DUAL		R-PDSO-G8	1	3.6 V	1.2 mm		85 MHz	3 mm					4194304 bit	1.65 V								4.4 mm			1.8
AT25XE321D-DWF	Renesas Electronics	FLASH	INDUSTRIAL	8	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		16.5 mA	2097152 words	3.3			16	UNCASED CHIP				20		85 Cel	3-STATE	2MX16	2M	-40 Cel					UPPER	HARDWARE/SOFTWARE	X-XUUC-N	1	3.6 V		100000 Write/Erase Cycles	133 MHz				SPI		33554432 bit	2.7 V	ALSO OPERATES AT 108MHZ @1.65V MINIMUM SUPPLY					NOR TYPE	.00005 Amp				1.8
AT25XE321D-SHN-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16.5 mA	2097152 words	3.3			16	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.24 mm			SPI		33554432 bit	2.7 V	ALSO OPERATES AT 108MHZ @1.65V MINIMUM SUPPLY		e4		260	NOR TYPE	.00005 Amp	5.29 mm			1.8
AT25XE321D-SHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16.5 mA	2097152 words	3.3			16	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.24 mm			SPI		33554432 bit	2.7 V	ALSO OPERATES AT 108MHZ @1.65V MINIMUM SUPPLY		e4		260	NOR TYPE	.00005 Amp	5.29 mm			1.8
AT25XE321D-SSHN-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16.5 mA	2097152 words	3.3			16	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	133 MHz	3.9 mm			SPI		33554432 bit	2.7 V	ALSO OPERATES AT 108MHZ @1.65V MINIMUM SUPPLY		e4		260	NOR TYPE	.00005 Amp	4.925 mm			1.8
AT25XE321D-SSHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16.5 mA	2097152 words	3.3			16	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	133 MHz	3.9 mm			SPI		33554432 bit	2.7 V	ALSO OPERATES AT 108MHZ @1.65V MINIMUM SUPPLY		e4		260	NOR TYPE	.00005 Amp	4.925 mm			1.8
AT29C010A-12PI	Atmel	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,112K,8K	50 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	1,1,1	NO	TIN LEAD		DUAL		R-PDIP-T32		5.5 V	4.826 mm			15.24 mm	Not Qualified	10 ms		BOTTOM/TOP	1048576 bit	4.5 V			e0			NOR TYPE	.0003 Amp	42.037 mm		120 ns	5	YES
AT29C010A-70JI	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	8K,112K,8K	50 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel		128KX8	128K	-40 Cel	1,1,1	NO	Tin/Lead (Sn/Pb)		QUAD		R-PQCC-J32	2	5.25 V	3.556 mm			11.43 mm	Not Qualified	10 ms		BOTTOM/TOP	1048576 bit	4.75 V			e0	30	225	NOR TYPE	.00003 Amp	13.97 mm		70 ns	5	YES
AT29C040A-90TU	Atmel	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	256	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel		512KX8	512K	-40 Cel	2K	NO	MATTE TIN		DUAL		R-PDSO-G32	3	5.5 V	1.2 mm			8 mm	Not Qualified	10 ms		BOTTOM/TOP	4194304 bit	4.5 V		256	e3		260	NOR TYPE	.0003 Amp	18.4 mm		90 ns	5	YES
AT45DB021D-SH-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			2097152 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel		2MX1	2M	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		R-PDSO-G8	1	3.6 V	2.16 mm		66 MHz	5.24 mm					2097152 bit	2.7 V			e4		260			5.29 mm			2.7
AT45DB021D-SSH-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			2097152 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel		2MX1	2M	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		R-PDSO-G8	1	3.6 V	1.75 mm		66 MHz	3.9 mm					2097152 bit	2.7 V			e4		260			4.925 mm			2.7
AT45DB021D-SSU	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	2097152 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		2MX1	2M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	66 MHz	3.9 mm	Not Qualified		SPI		2097152 bit	2.7 V						NOR TYPE	.00001 Amp	4.925 mm			2.7
AT45DB021D-SU	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	2097152 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		2MX1	2M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.24 mm	Not Qualified		SPI		2097152 bit	2.7 V						NOR TYPE	.00001 Amp	5.29 mm			2.7
AT45DB021E-SHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			2097152 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel		2MX1	2M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8	1	3.6 V	2.16 mm		70 MHz	5.24 mm					2097152 bit	1.65 V			e4		260	NOR TYPE		5.29 mm			2.7
AT45DB021E-SSHN-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16 mA	2097152 words	1.8		1.8/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		2MX1	2M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	70 MHz	3.9 mm	Not Qualified		SPI		2097152 bit	1.65 V			e4			NOR TYPE	.000008 Amp	4.925 mm			2.7
AT45DB041D-SSU-2.5-SL383	Adesto Technologies	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			4194304 words	2.7			1	SMALL OUTLINE					1.27 mm	85 Cel		4MX1	4M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G8		3.6 V	1.75 mm		50 MHz	3.9 mm					4194304 bit	2.5 V			e3			NOR TYPE		4.925 mm			2.7
AT45DB041D-SSU-SL383	Adesto Technologies	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			4194304 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel		4MX1	4M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G8	1	3.6 V	1.75 mm		66 MHz	3.9 mm					4194304 bit	2.7 V	ORGANIZED AS 2048 PAGES OF 264 BYTES EACH		e3			NOR TYPE		4.925 mm			2.7
AT45DB041E-SSHNHC-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16 mA	4194304 words	3		1.8/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	85 MHz	3.9 mm	Not Qualified		SPI		4194304 bit	2.3 V			e4			NOR TYPE	.00004 Amp	4.925 mm			3
AT45DB321D-CU	Atmel	FLASH	INDUSTRIAL	24	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			33554432 words	3			1	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		32MX1	32M	-40 Cel			MATTE TIN		BOTTOM		R-PBGA-B24		3.6 V	1.4 mm		66 MHz	6 mm	Not Qualified				33554432 bit	2.7 V	ORGANIZED AS 8192 PAGES OF 528 BYTES EACH		e3					8 mm			2.7
AT45DB321D-MWU	Atmel	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		15 mA	33554432 words	3		3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		32MX1	32M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	66 MHz	6 mm	Not Qualified		SPI		33554432 bit	2.7 V	ORGANIZED AS 8192 PAGES OF 528 BYTES EACH		e3			NOR TYPE	.00001 Amp	8 mm			2.7
AT49BV802D-70TU	Atmel	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	8,15	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	8388608 bit	2.65 V		4/8	e3		260	NOR TYPE	.000025 Amp	18.4 mm	YES	70 ns	3	YES
CAT28F001L-12T	Onsemi	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	70 Cel		128KX8	128K	0 Cel	1,2,1	YES	TIN		DUAL		R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified			TOP	1048576 bit	4.5 V	TOP BOOT BLOCK		e3		260	NOR TYPE	.000001 Amp	42.03 mm		120 ns	12	NO
CAT28F001LI-12T	Onsemi	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	85 Cel		128KX8	128K	-40 Cel	1,2,1	YES	TIN		DUAL		R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified			TOP	1048576 bit	4.5 V	TOP BOOT BLOCK		e3		260	NOR TYPE	.000001 Amp	42.03 mm		120 ns	12	NO
DTKN/32GB	Kingston Technology Company	USB FLASH DRIVE			XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD		ASYNCHRONOUS			34359738368 words				8	MICROELECTRONIC ASSEMBLY						60 Cel		32GX8	32G	0 Cel					UNSPECIFIED		R-XXMA-N			4.9 mm			12.6 mm					274877906944 bit		USB 3.2 FLASH DRIVE					NOR TYPE		39 mm

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.