Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Sector Size (Words) | Maximum Supply Current | No. of Words | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Toggle Bit | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | No. of Sectors/Size | Command User Interface | Terminal Finish | Ready or Busy | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Maximum Write Cycle Time (tWC) | Serial Bus Type | Boot Block | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | Page Size (words) | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Type | Maximum Standby Current | Length | Common Flash Interface | Maximum Access Time | Programming Voltage (V) | Data Polling |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Elite Semiconductor Microelectronics Technologyinc |
FLASH |
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|
Intel |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
20 mA |
33554432 words |
3.3 |
1 |
SMALL OUTLINE |
SOP8,2 |
20 |
1.27 mm |
85 Cel |
3-STATE |
32MX1 |
32M |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G8 |
3 |
3.6 V |
1.75 mm |
100000 Write/Erase Cycles |
133 MHz |
3.9 mm |
33554432 bit |
2.7 V |
e4 |
40 |
260 |
NOR TYPE |
.0001 Amp |
4.9 mm |
2.7 |
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|
Intel |
FLASH |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
20 mA |
67108864 words |
3.3 |
1 |
SMALL OUTLINE |
SOP16,.4 |
20 |
1.27 mm |
85 Cel |
3-STATE |
64MX1 |
64M |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G16 |
3 |
3.6 V |
2.65 mm |
100000 Write/Erase Cycles |
133 MHz |
7.5 mm |
8 ms |
67108864 bit |
2.7 V |
e4 |
20 |
260 |
NOR TYPE |
.0001 Amp |
10.3 mm |
2.7 |
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|
Gigadevice Semiconductor |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
27 mA |
16777216 words |
3 |
8 |
SMALL OUTLINE |
SOP8,.3 |
20 |
1.27 mm |
85 Cel |
3-STATE |
16MX8 |
16M |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-G8 |
3.6 V |
2.16 mm |
100000 Write/Erase Cycles |
104 MHz |
5.23 mm |
SPI |
134217728 bit |
2.7 V |
NOR TYPE |
.00005 Amp |
5.28 mm |
3.3 |
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|
Gigadevice Semiconductor |
FLASH |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
20 mA |
2097152 words |
3.3 |
8 |
SMALL OUTLINE |
SOP8,.3 |
20 |
1.27 mm |
85 Cel |
2MX8 |
2M |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-G8 |
3.6 V |
2.16 mm |
100000 Write/Erase Cycles |
120 MHz |
5.23 mm |
SPI |
16777216 bit |
2.7 V |
NOR TYPE |
.000005 Amp |
5.28 mm |
3.3 |
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|
Gigadevice Semiconductor |
FLASH |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
25 mA |
2097152 words |
3.3 |
8 |
SMALL OUTLINE |
SOP8,.3 |
20 |
1.27 mm |
85 Cel |
2MX8 |
2M |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-G8 |
3.6 V |
2.16 mm |
100000 Write/Erase Cycles |
133 MHz |
5.23 mm |
SPI |
16777216 bit |
3 V |
2.7V TO 3V @ 120 MHZ |
NOR TYPE |
.00004 Amp |
5.28 mm |
3.3 |
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|
Gigadevice Semiconductor |
FLASH |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
25 mA |
8388608 words |
3.3 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.25 |
20 |
1.27 mm |
85 Cel |
8MX8 |
8M |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
3.6 V |
.8 mm |
100000 Write/Erase Cycles |
133 MHz |
5 mm |
SPI |
67108864 bit |
3 V |
2.7V TO 3V @ 120 MHZ |
NOR TYPE |
.00004 Amp |
6 mm |
3.3 |
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|
Gigadevice Semiconductor |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
8388608 words |
3.3 |
1 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
8MX1 |
8M |
-40 Cel |
DUAL |
R-PDSO-G8 |
3.6 V |
1.75 mm |
120 MHz |
3.9 mm |
8388608 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
4.9 mm |
3.3 |
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|
Greenliant Systems |
FLASH |
INDUSTRIAL |
32 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
128 |
30 mA |
524288 words |
YES |
3/3.3 |
8 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP32,.56,20 |
Flash Memories |
.5 mm |
85 Cel |
512KX8 |
512K |
-40 Cel |
4K |
DUAL |
R-PDSO-G32 |
Not Qualified |
4194304 bit |
NOR TYPE |
.00003 Amp |
70 ns |
YES |
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|
Sk Hynix |
FLASH |
COMMERCIAL |
48 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
128K |
30 mA |
134217728 words |
NO |
3/3.3 |
8 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP48,.8,20 |
Flash Memories |
.5 mm |
70 Cel |
128MX8 |
128M |
0 Cel |
1K |
YES |
YES |
DUAL |
R-PDSO-G48 |
Not Qualified |
1073741824 bit |
2K |
SLC NAND TYPE |
.00005 Amp |
20 ns |
NO |
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|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
8388608 words |
3 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
1 |
1.27 mm |
105 Cel |
8MX8 |
8M |
-40 Cel |
Tin (Sn) |
DUAL |
R-PDSO-N8 |
3.6 V |
.8 mm |
166 MHz |
5 mm |
67108864 bit |
2.7 V |
e3 |
30 |
260 |
6 mm |
3 |
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|
Integrated Silicon Solution |
FLASH |
NOT SPECIFIED |
NOT SPECIFIED |
3 |
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|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
30 mA |
16777216 words |
3 |
8 |
SMALL OUTLINE |
SOP16,.4 |
1 |
20 |
1.27 mm |
105 Cel |
3-STATE |
16MX8 |
16M |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-G16 |
3.6 V |
2.65 mm |
100000 Write/Erase Cycles |
166 MHz |
7.49 mm |
SPI |
134217728 bit |
2.3 V |
ALSO OPERATES WITH 133MHZ @ 2.3VMIN SUPPLY |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.00007 Amp |
10.31 mm |
3 |
|||||||||||||||||||||||
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
33554432 words |
3 |
8 |
SMALL OUTLINE |
1.27 mm |
105 Cel |
32MX8 |
32M |
-40 Cel |
DUAL |
R-PDSO-G16 |
3.6 V |
2.65 mm |
133 MHz |
7.49 mm |
268435456 bit |
2.3 V |
NOT SPECIFIED |
NOT SPECIFIED |
10.31 mm |
3 |
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|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
33554432 words |
3 |
8 |
SMALL OUTLINE |
1 |
1.27 mm |
105 Cel |
32MX8 |
32M |
-40 Cel |
DUAL |
R-PDSO-G16 |
3.6 V |
2.65 mm |
166 MHz |
7.49 mm |
268435456 bit |
2.3 V |
10.31 mm |
3 |
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|
Integrated Silicon Solution |
FLASH |
3 |
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|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
1048576 words |
3 |
1 |
SMALL OUTLINE |
1.27 mm |
105 Cel |
1MX1 |
1M |
-40 Cel |
TIN |
DUAL |
R-PDSO-G8 |
3.6 V |
1.75 mm |
104 MHz |
3.9 mm |
1048576 bit |
2.3 V |
e3 |
30 |
260 |
4.9 mm |
3 |
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|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
8 |
SOP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
2097152 words |
1.8 |
8 |
SMALL OUTLINE |
1 |
1.27 mm |
105 Cel |
2MX8 |
2M |
-40 Cel |
DUAL |
S-PDSO-G8 |
1.95 V |
2.16 mm |
133 MHz |
5.28 mm |
16777216 bit |
1.65 V |
NOT SPECIFIED |
NOT SPECIFIED |
5.28 mm |
1.8 |
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Integrated Silicon Solution |
FLASH |
1.8 |
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
8388608 words |
1.8 |
8 |
SMALL OUTLINE |
1.27 mm |
105 Cel |
8MX8 |
8M |
-40 Cel |
DUAL |
R-PDSO-G16 |
1.95 V |
2.65 mm |
133 MHz |
7.49 mm |
67108864 bit |
1.65 V |
NOT SPECIFIED |
NOT SPECIFIED |
10.31 mm |
1.8 |
||||||||||||||||||||||||||||||||||
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
30 mA |
16777216 words |
1.8 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.25 |
1 |
20 |
1.27 mm |
105 Cel |
3-STATE |
16MX8 |
16M |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
1.95 V |
.8 mm |
100000 Write/Erase Cycles |
166 MHz |
5 mm |
SPI |
134217728 bit |
1.65 V |
ALSO OPERATES WITH 133MHZ @ 1.65VMIN SUPPLY |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.000075 Amp |
6 mm |
1.8 |
|||||||||||||||||||||||
|
Integrated Silicon Solution |
FLASH |
AUTOMOTIVE |
24 |
TBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
AEC-Q100 |
BALL |
SERIAL |
SYNCHRONOUS |
35 mA |
67108864 words |
1.8 |
8 |
GRID ARRAY, THIN PROFILE |
BGA24,5X5,40 |
20 |
1 mm |
125 Cel |
3-STATE |
64MX8 |
64M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
HARDWARE/SOFTWARE |
R-PBGA-B24 |
3 |
1.95 V |
1.2 mm |
100000 Write/Erase Cycles |
112 MHz |
6 mm |
SPI |
536870912 bit |
1.7 V |
30 |
260 |
NOR TYPE |
.00026 Amp |
8 mm |
1.8 |
||||||||||||||||||||||
Integrated Silicon Solution |
FLASH |
1.8 |
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
Integrated Silicon Solution |
FLASH |
24 |
TBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
AEC-Q100 |
BALL |
SERIAL |
SYNCHRONOUS |
70 mA |
33554432 words |
1.8 |
8 |
GRID ARRAY, THIN PROFILE |
BGA24,5X5,40 |
100 |
1 mm |
125 Cel |
3-STATE |
32MX8 |
32M |
-40 Cel |
BOTTOM |
HARDWARE/SOFTWARE |
R-PBGA-B24 |
1.95 V |
1.2 mm |
100000 Write/Erase Cycles |
200 MHz |
6 mm |
SPI |
268435456 bit |
1.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.00005 Amp |
8 mm |
9 |
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|
Micron Technology |
FLASH |
INDUSTRIAL |
56 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
128K |
54 mA |
8388608 words |
3 |
NO |
3/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSSOP56,.8,20 |
8 |
Flash Memories |
.5 mm |
85 Cel |
8MX16 |
8M |
-40 Cel |
128 |
YES |
YES |
DUAL |
R-PDSO-G56 |
3.6 V |
1.2 mm |
14 mm |
Not Qualified |
134217728 bit |
2.7 V |
4/8 |
30 |
260 |
NOR TYPE |
.00012 Amp |
18.4 mm |
YES |
75 ns |
2.7 |
NO |
||||||||||||||||||
Samsung |
FLASH |
COMMERCIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
134217728 words |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
70 Cel |
128MX8 |
128M |
0 Cel |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
1073741824 bit |
2.7 V |
CONTAINS ADDITIONAL 32M BIT SPARE MEMORY |
SLC NAND TYPE |
18.4 mm |
2.7 |
||||||||||||||||||||||||||||||||||||
Samsung |
FLASH |
OTHER |
153 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
68719476736 words |
1.8 |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.5 mm |
85 Cel |
64GX8 |
64G |
-25 Cel |
BOTTOM |
R-PBGA-B153 |
1.95 V |
1 mm |
200 MHz |
11.5 mm |
549755813888 bit |
1.7 V |
ALSO OPERATES @ 3V SUP NOM |
MLC NAND TYPE |
13 mm |
1.8 |
|||||||||||||||||||||||||||||||||||
|
Onsemi |
FLASH |
INDUSTRIAL |
8 |
VSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
15 mA |
262144 words |
2.5 |
2.5/3.3 |
8 |
SMALL OUTLINE, VERY THIN PROFILE |
TSOP8,.25 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
256KX8 |
256K |
-40 Cel |
MATTE TIN |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-G8 |
3 |
3.6 V |
.85 mm |
100000 Write/Erase Cycles |
30 MHz |
3.9 mm |
Not Qualified |
SPI |
2097152 bit |
2.3 V |
e3 |
30 |
260 |
NOR TYPE |
.00001 Amp |
4.9 mm |
3 |
||||||||||||||||||||
Sharp Corporation |
FLASH |
COMMERCIAL |
56 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
2097152 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
8 |
.5 mm |
70 Cel |
2MX16 |
2M |
0 Cel |
DUAL |
R-PDSO-G56 |
3.6 V |
1.19 mm |
14 mm |
Not Qualified |
33554432 bit |
2.7 V |
NOR TYPE |
18.4 mm |
120 ns |
3 |
||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
15 mA |
131072 words |
3 |
3/3.3 |
8 |
SMALL OUTLINE |
SOP8,.25 |
EEPROMs |
20 |
1.27 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
TIN LEAD |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-G8 |
3.6 V |
1.75 mm |
100000 Write/Erase Cycles |
50 MHz |
3.9 mm |
Not Qualified |
SPI |
1048576 bit |
2.7 V |
40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST |
e0 |
NOR TYPE |
.000005 Amp |
4.9 mm |
2.7 |
||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
15 mA |
131072 words |
3 |
3/3.3 |
8 |
SMALL OUTLINE |
SOP8,.25 |
EEPROMs |
20 |
1.27 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
TIN LEAD |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-G8 |
3.6 V |
1.75 mm |
100000 Write/Erase Cycles |
50 MHz |
3.9 mm |
Not Qualified |
SPI |
1048576 bit |
2.7 V |
40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST |
e0 |
NOR TYPE |
.000005 Amp |
4.9 mm |
2.7 |
||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
15 mA |
4194304 words |
3 |
3/3.3 |
8 |
SMALL OUTLINE |
SOP8,.3 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
4MX8 |
4M |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-G8 |
1 |
3.6 V |
2.5 mm |
100000 Write/Erase Cycles |
20 MHz |
5.62 mm |
Not Qualified |
SPI |
33554432 bit |
2.7 V |
e4 |
NOR TYPE |
.00001 Amp |
5.62 mm |
2.7 |
||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
15 mA |
524288 words |
3 |
2.5/3.3 |
8 |
SMALL OUTLINE |
SOLCC8,.25 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
512KX8 |
512K |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
3.6 V |
1 mm |
100000 Write/Erase Cycles |
50 MHz |
5 mm |
Not Qualified |
SPI |
4194304 bit |
2.7 V |
40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.00001 Amp |
6 mm |
2.7 |
||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
15 mA |
524288 words |
3 |
2.5/3.3 |
8 |
SMALL OUTLINE |
SOLCC8,.25 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
512KX8 |
512K |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
3.6 V |
1 mm |
100000 Write/Erase Cycles |
50 MHz |
5 mm |
Not Qualified |
SPI |
4194304 bit |
2.7 V |
40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.00001 Amp |
6 mm |
2.7 |
||||||||||||||||||||||
|
Micron Technology |
FLASH |
AUTOMOTIVE |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
AEC-Q100 |
GULL WING |
SERIAL |
SYNCHRONOUS |
15 mA |
8388608 words |
3/3.3 |
1 |
SMALL OUTLINE |
SOP8,.25 |
Flash Memories |
20 |
1.27 mm |
125 Cel |
8MX1 |
8M |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-G8 |
3.6 V |
1.75 mm |
100000 Write/Erase Cycles |
75 MHz |
3.9 mm |
Not Qualified |
15 ms |
SPI |
8388608 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0001 Amp |
4.9 mm |
2.7 |
||||||||||||||||||||||
|
Micron Technology |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
15 mA |
2097152 words |
2.7 |
2.5/3.3 |
8 |
SMALL OUTLINE |
SOP8,.25 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
2MX8 |
2M |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-G8 |
3.6 V |
1.75 mm |
100000 Write/Erase Cycles |
75 MHz |
3.9 mm |
Not Qualified |
15 ms |
SPI |
16777216 bit |
2.3 V |
30 |
260 |
NOR TYPE |
.00001 Amp |
4.9 mm |
3 |
||||||||||||||||||||||
|
Micron Technology |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
15 mA |
2097152 words |
2.7 |
2.5/3.3 |
8 |
SMALL OUTLINE |
SOP8,.25 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
2MX8 |
2M |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-G8 |
3.6 V |
1.75 mm |
100000 Write/Erase Cycles |
75 MHz |
3.9 mm |
Not Qualified |
15 ms |
SPI |
16777216 bit |
2.3 V |
e4 |
NOR TYPE |
.00001 Amp |
4.9 mm |
3 |
||||||||||||||||||||||
STMicroelectronics |
FLASH |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
5 |
NO |
5 |
8 |
IN-LINE |
DIP32,.6 |
Flash Memories |
2.54 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
0 Cel |
YES |
TIN LEAD |
DUAL |
R-PDIP-T32 |
5.25 V |
5.08 mm |
10000 Write/Erase Cycles |
15.24 mm |
Not Qualified |
524288 bit |
4.75 V |
e0 |
NOR TYPE |
.0001 Amp |
41.91 mm |
15 ns |
12 |
NO |
|||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
8K,64K |
20 mA |
2097152 words |
3 |
YES |
3/3.3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,32 |
8 |
Flash Memories |
.8 mm |
85 Cel |
2MX16 |
2M |
-40 Cel |
8,63 |
YES |
TIN LEAD |
YES |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1.2 mm |
6 mm |
Not Qualified |
BOTTOM |
33554432 bit |
2.7 V |
e0 |
NOR TYPE |
.0001 Amp |
8 mm |
YES |
70 ns |
3 |
YES |
||||||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
48 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16K,8K,32K,64K |
20 mA |
262144 words |
3 |
YES |
3/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP48,.8,20 |
8 |
Flash Memories |
20 |
.5 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
-40 Cel |
1,2,1,7 |
YES |
TIN |
YES |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
100000 Write/Erase Cycles |
12 mm |
Not Qualified |
BOTTOM |
4194304 bit |
2.7 V |
BOTTOM BOOT BLOCK |
e3 |
NOR TYPE |
.0001 Amp |
18.4 mm |
55 ns |
3 |
YES |
|||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
8K,64K |
20 mA |
4194304 words |
3 |
YES |
3/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.8,20 |
8 |
Flash Memories |
.5 mm |
85 Cel |
4MX16 |
4M |
-40 Cel |
8,127 |
YES |
TIN/TIN BISMUTH |
YES |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
BOTTOM |
67108864 bit |
2.7 V |
4/8 |
e3/e6 |
40 |
260 |
NOR TYPE |
.0001 Amp |
18.4 mm |
YES |
70 ns |
3 |
YES |
|||||||||||||||
|
Micron Technology |
FLASH |
AUTOMOTIVE |
48 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4194304 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
8 |
.5 mm |
125 Cel |
4MX16 |
4M |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
TOP |
67108864 bit |
2.7 V |
e3 |
NOR TYPE |
18.4 mm |
70 ns |
3 |
|||||||||||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
AUTOMOTIVE |
80 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
AEC-Q100 |
BALL |
PARALLEL |
SYNCHRONOUS |
4K,2K,16K |
50 mA |
524288 words |
3.3 |
NO |
3/3.3 |
32 |
GRID ARRAY, LOW PROFILE |
BGA80,8X10,40 |
Flash Memories |
1 mm |
125 Cel |
512KX32 |
512K |
-40 Cel |
4,8,62 |
YES |
BOTTOM |
R-PBGA-B80 |
3.6 V |
1.7 mm |
10 mm |
Not Qualified |
BOTTOM |
16777216 bit |
2.7 V |
4 |
NOR TYPE |
.00015 Amp |
12 mm |
YES |
45 ns |
3.3 |
NO |
||||||||||||||||||||
|
Micron Technology |
FLASH |
NOT SPECIFIED |
NOT SPECIFIED |
3 |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH |
INDUSTRIAL |
15 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
SERIAL |
SYNCHRONOUS |
134217728 words |
1.8 |
1 |
GRID ARRAY |
85 Cel |
128MX1 |
128M |
-40 Cel |
BOTTOM |
S-PBGA-B15 |
2 V |
166 MHz |
134217728 bit |
1.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
1.8 |
||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH |
NOT SPECIFIED |
NOT SPECIFIED |
1.8 |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH |
INDUSTRIAL |
64 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
64K |
50 mA |
8388608 words |
3 |
YES |
16 |
GRID ARRAY, LOW PROFILE |
BGA64,8X8,40 |
8 |
20 |
1 mm |
85 Cel |
8MX16 |
8M |
-40 Cel |
2K |
NO |
TIN SILVER COPPER |
YES |
BOTTOM |
R-PBGA-B64 |
3.6 V |
1.4 mm |
100000 Write/Erase Cycles |
11 mm |
134217728 bit |
2.7 V |
16 |
e1 |
30 |
260 |
NOR TYPE |
.00012 Amp |
13 mm |
YES |
70 ns |
3 |
YES |
|||||||||||||||||
Micron Technology |
FLASH |
MLC NAND TYPE |
3.3 |
Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.
Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.
There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.
Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.