FRAM-EMBEDDED FRAMs 5

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Length
MB89R118C1-DIAP15-P1	Fujitsu	FRAM-EMBEDDED		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD				2048 words		8	UNCASED CHIP	DIE OR CHIP	10		85 Cel	2KX8	2K		-20 Cel	UPPER		X-XUUC-N				1000000000000 Write/Erase Cycles		16384 bit		DATA RETENTION TIME @ 85 DEGREE CENTIGRADE
WM72016-6-DGTR	Infineon Technologies	FRAM-EMBEDDED	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	.025 mA	1024 words	2.5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8.12SQ,25	20	.65 mm	85 Cel	1KX16	1K	2.1 V	-40 Cel	DUAL	HARDWARE	S-PDSO-N8	1	3 V	.65 mm	100000000000000 Write/Erase Cycles	3 mm	16384 bit	2.1 V	500KV ESD AVAILABLE	3 mm
WM71016-6-DGTR	Infineon Technologies	FRAM-EMBEDDED	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD		ASYNCHRONOUS		1024 words		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8.12SQ,25	20	.65 mm	85 Cel	1KX16	1K		-40 Cel	DUAL		S-PDSO-N8			.65 mm	100000000000000 Write/Erase Cycles	3 mm	16384 bit		500KV ESD AVAILABLE	3 mm
WM71008-6-DGTR	Infineon Technologies	FRAM-EMBEDDED	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD		ASYNCHRONOUS		512 words		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8.12SQ,25	20	.65 mm	85 Cel	512X16	512		-40 Cel	DUAL		S-PDSO-N8			.65 mm	100000000000000 Write/Erase Cycles	3 mm	8192 bit		500KV ESD AVAILABLE	3 mm
WM71004-6-DGTR	Infineon Technologies	FRAM-EMBEDDED	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD		ASYNCHRONOUS		256 words		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8.12SQ,25	20	.65 mm	85 Cel	256X16	256		-40 Cel	DUAL		S-PDSO-N8			.65 mm	100000000000000 Write/Erase Cycles	3 mm	4096 bit		500KV ESD AVAILABLE	3 mm

FRAMs

Ferroelectric Random-Access Memories (or FRAMs), are a type of non-volatile memory technology that combines the advantages of both traditional dynamic random-access memory (DRAM) and non-volatile memory (NVRAM) technologies. FRAMs store data using a ferroelectric material, which has the unique property of being able to retain data even when the power is removed.

FRAMs are used in a variety of fields, including industrial automation, automotive systems, smart meters, and more, where their combination of non-volatility, speed, and endurance can be advantageous. While they may not be as prevalent as other memory types like Flash or DRAM, FRAMs offer a unique set of features that make them suitable for specific use cases.

Here are some key features and characteristics of FRAMs:

Non-Volatile: FRAMs are non-volatile, meaning they can retain data even when the power supply is turned off. This is in contrast to traditional DRAM, which is volatile and loses data when power is removed.

Fast Write Speeds: FRAMs offer very fast write speeds, comparable to DRAM. This makes them suitable for applications where high-speed write operations are required.

Low Power Consumption: FRAMs typically consume less power than other non-volatile memory technologies like Flash memory. This makes them suitable for battery-powered devices and applications where power efficiency is critical.

High Endurance: FRAMs have a high endurance, meaning they can withstand a large number of write cycles without degrading. This is in contrast to some Flash memory technologies that have limited write endurance.

Bit-Addressable: FRAMs are bit-addressable, which means you can read or write individual bits of data. This granularity is useful in applications where precise control over specific data is required.

Radiation Resistance: FRAMs are resistant to radiation, which makes them suitable for use in aerospace and other high-radiation environments.

Limited Density: One limitation of FRAM technology is that it has historically had lower storage density compared to other non-volatile memory technologies like Flash. However, advancements in FRAM technology have been made to increase storage capacity.