Fujitsu FRAMs 59

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MB85RS1MTPNF-G-JNERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	9.5 mA	131072 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	128KX8	128K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	10000000000000 Write/Erase Cycles	30 MHz	3.9 mm		SPI	1048576 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	.00012 Amp	5.05 mm
MB85RC256VPNF-G-JNERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.2 mA	32768 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	32KX8	32K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000000000 Write/Erase Cycles	1 MHz	3.9 mm		I2C	262144 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.000056 Amp	5.05 mm
MB85RS2MTAPNF-G-BDERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.3 mA	262144 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	256KX8	256K	1.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.73 mm	10000000000000 Write/Erase Cycles	40 MHz	3.9 mm		SPI	2097152 bit	1.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	.00005 Amp	4.89 mm
MB85RS64VPNF-G-JNERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	8192 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	8KX8	8K	3 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000000000 Write/Erase Cycles	20 MHz	3.9 mm	Not Qualified	SPI	65536 bit	3 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00002 Amp	5.05 mm
MB85RS64PNF-G-JNERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.4 mA	8192 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	8KX8	8K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000000000 Write/Erase Cycles	20 MHz	3.9 mm		SPI	65536 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.000015 Amp	5.05 mm
MB85RC64TAPN-G-AMEWE1	Fujitsu	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.19 mA	8192 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		10	.5 mm	85 Cel	8KX8	8K	1.8 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	HARDWARE	R-PDSO-N8	3	3.6 V	.75 mm	10000000000000 Write/Erase Cycles	3.4 MHz	2 mm		I2C	65536 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE	e4			.00001 Amp	3 mm
MB85RS256APNF-G-JNE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	3.3	3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	32KX8	32K	3 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000000000 Write/Erase Cycles	25 MHz	3.9 mm	Not Qualified	SPI	262144 bit	3 V	DATA RETENTION TIME @ 55 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	.00005 Amp	5.05 mm
MB85RS64PNF-G-JNE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.4 mA	8192 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	8KX8	8K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000000000 Write/Erase Cycles	20 MHz	3.9 mm		SPI	65536 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.000015 Amp	5.05 mm
MB85RC64TAPNF-G-BDERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.19 mA	8192 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	8KX8	8K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.73 mm	10000000000000 Write/Erase Cycles	3.4 MHz	3.9 mm		I2C	65536 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00001 Amp	4.89 mm
MB85RS2MTYPNF-GS-AWE2	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	4 mA	262144 words	3.3		8	SMALL OUTLINE	SOP8,.25		2.75	1.27 mm	125 Cel	256KX8	256K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.75 mm	10000000000000 Write/Erase Cycles	50 MHz	3.9 mm		SPI	2097152 bit	1.8 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE		10	260	.00022 Amp	4.9 mm
MB85RS128TYPNF-GS-BCERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	16384 words	3.3		8	SMALL OUTLINE	SOP8,.25		10.9	1.27 mm	125 Cel	16KX8	16K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.73 mm	10000000000000 Write/Erase Cycles	40 MHz	3.9 mm		SPI	131072 bit	1.8 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	.000045 Amp	4.89 mm
MB85RS256TYPNF-GS-BCERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	32768 words	3.3		8	SMALL OUTLINE	SOP8,.25		10.9	1.27 mm	125 Cel	32KX8	32K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.73 mm	10000000000000 Write/Erase Cycles	40 MHz	3.9 mm		SPI	262144 bit	1.8 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	.00005 Amp	4.89 mm
MB85RC256VPNF-G-JNE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.2 mA	32768 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	32KX8	32K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000000000 Write/Erase Cycles	1 MHz	3.9 mm		I2C	262144 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.000056 Amp	5.05 mm
MB85RC04VPNF-G-JNE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.13 mA	512 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	512X8	512	3 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000000000 Write/Erase Cycles	1 MHz	3.9 mm		I2C	4096 bit	3 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00001 Amp	5.05 mm
MB85RC256VPF-G-JNERE2	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.2 mA	32768 words	3.3		8	SMALL OUTLINE	SOP8,.3		10	1.27 mm	85 Cel	32KX8	32K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		5.5 V	2.1 mm	1000000000000 Write/Erase Cycles	1 MHz	5.24 mm		I2C	262144 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.000056 Amp	5.3 mm
MB85RS1MTPW-G-APEWE1	Fujitsu	FRAM	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	9.5 mA	131072 words	3.3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			10		85 Cel	128KX8	128K	1.7 V	-40 Cel		BOTTOM	HARDWARE	R-PBGA-B8	3	3.6 V	.43 mm	10000000000000 Write/Erase Cycles	30 MHz	2.28 mm		SPI	1048576 bit	1.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00012 Amp	3.092 mm
MB85RC16PNF-G-JNE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.1 mA	2048 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	2KX8	2K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000000000 Write/Erase Cycles	1 MHz	3.9 mm		I2C	16384 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.000001 Amp	5.05 mm
MB85RS4MTPF-G-JNERE2	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.6 mA	524288 words	3.3		8	SMALL OUTLINE	SOP8,.3		10	1.27 mm	85 Cel	512KX8	512K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	2.1 mm	10000000000000 Write/Erase Cycles	40 MHz	5.24 mm		SPI	4194304 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00005 Amp	5.3 mm
MB85RC16PN-G-AMERE1	Fujitsu	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.1 mA	2048 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		10	.5 mm	85 Cel	2KX8	2K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-N8		3.6 V	.8 mm	1000000000000 Write/Erase Cycles	1 MHz	2 mm		I2C	16384 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.000001 Amp	3 mm
MB85RC64PNF-G-JNE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.15 mA	8192 words	3.3	3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	8KX8	8K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	I2C	65536 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	.00002 Amp	5.05 mm
MB85RC16PNF-G-JNERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.1 mA	2048 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	2KX8	2K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000000000 Write/Erase Cycles	1 MHz	3.9 mm		I2C	16384 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.000001 Amp	5.05 mm
MB85RC1MTPNF-G-JNERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1.2 mA	131072 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	128KX8	128K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.75 mm	10000000000000 Write/Erase Cycles	3.4 MHz	3.9 mm		I2C	1048576 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.000012 Amp	5.05 mm
MB85RC64TAPNF-G-BDE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.19 mA	8192 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	8KX8	8K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.73 mm	10000000000000 Write/Erase Cycles	3.4 MHz	3.9 mm		I2C	65536 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00001 Amp	4.89 mm
MB85RS4MTPF-G-JNE2	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.6 mA	524288 words	3.3		8	SMALL OUTLINE	SOP8,.3		10	1.27 mm	85 Cel	512KX8	512K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	2.1 mm	10000000000000 Write/Erase Cycles	40 MHz	5.24 mm		SPI	4194304 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00005 Amp	5.3 mm
MB85R1001ANC-GE1	Fujitsu	FRAM	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.55,20		10	.5 mm	85 Cel	128KX8	128K	3 V	-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm	10000000000 Write/Erase Cycles		12 mm			1048576 bit	3 V	DATA RETENTION TIME @ 55 DEGREE CENTIGRADE				.00005 Amp	12.4 mm
MB85RC04VPNF-G-JNERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.13 mA	512 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	512X8	512	3 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000000000 Write/Erase Cycles	1 MHz	3.9 mm		I2C	4096 bit	3 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00001 Amp	5.05 mm
MB85RS128TYPNF-G-BCERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.3 mA	16384 words	3.3		8	SMALL OUTLINE	SOP8,.25		10.9	1.27 mm	125 Cel	16KX8	16K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.73 mm	10000000000000 Write/Erase Cycles	33 MHz	3.9 mm		SPI	131072 bit	1.8 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	.000045 Amp	4.89 mm
MB85RC128PNF-G-JNE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.15 mA	16384 words	3.3	3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	16KX8	16K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	I2C	131072 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	.00002 Amp	5.05 mm
MB85RS1MTPNF-G-JNE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	9.5 mA	131072 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	128KX8	128K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	10000000000000 Write/Erase Cycles	30 MHz	3.9 mm		SPI	1048576 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	.00012 Amp	5.05 mm
MB85RC512TPNF-G-JNERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1.2 mA	65536 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	64KX8	64K	1.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	10000000000000 Write/Erase Cycles	3.4 MHz	3.9 mm		I2C	524288 bit	1.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	.00012 Amp	5.05 mm
MB85RS128APNF-G-JNE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	16384 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	16KX8	16K	3 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000000000 Write/Erase Cycles	25 MHz	3.9 mm		SERIAL	131072 bit	3 V	DATA RETENTION TIME @ 55 DEGREE CENTIGRADE				.00005 Amp	5.05 mm
MB85RS16NPN-G-AMEWE1	Fujitsu	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2.4 mA	2048 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		10	.5 mm	95 Cel	2KX8	2K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-N8	3	3.6 V	.75 mm	10000000000 Write/Erase Cycles	20 MHz	2 mm		SPI	16384 bit	2.7 V	DATA RETENTION TIME @ 95 DEGREE CENTIGRADE				.00002 Amp	3 mm
MB85R1001PFTN-GE1	Fujitsu	FRAM	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.55,20		10	.5 mm	85 Cel	128KX8	128K		-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm	10000000000 Write/Erase Cycles		12 mm			1048576 bit	3 V	DATA RETENTION TIME @ 55 DEGREE CENTIGRADE				.00005 Amp	12.4 mm
MB85RC16VPNF-G-JNE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.13 mA	2048 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	2KX8	2K	3 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000000000 Write/Erase Cycles	1 MHz	3.9 mm		I2C	16384 bit	3 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00001 Amp	5.05 mm
MB85RS16PNF-G-JNERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.4 mA	2048 words	3.3	3/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	2KX8	2K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000000000 Write/Erase Cycles	20 MHz	3.9 mm	Not Qualified	SPI	16384 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	.000015 Amp	5.05 mm
MB85R4002ANC-GE1	Fujitsu	FRAM	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.55,20		10	.5 mm	85 Cel	256KX16	256K	3 V	-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm	10000000000 Write/Erase Cycles		12 mm			4194304 bit	3 V	DATA RETENTION TIME @ 55 DEGREE CENTIGRADE				.00015 Amp	12.4 mm
MB85RC64APNF-G-JNERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.375 mA	8192 words	3.3	3/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	8KX8	8K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	I2C	65536 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	.00002 Amp	5.05 mm
MB85RS256TYPNF-G-BCERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.3 mA	32768 words	3.3		8	SMALL OUTLINE	SOP8,.25		10.9	1.27 mm	125 Cel	32KX8	32K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.73 mm	10000000000000 Write/Erase Cycles	33 MHz	3.9 mm		SPI	262144 bit	1.8 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	.00005 Amp	4.89 mm
MB85RS512TPNF-G-JNERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	64KX8	64K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	10000000000000 Write/Erase Cycles	30 MHz	3.9 mm		SPI	524288 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00012 Amp	5.05 mm
MB85RS64TPNF-G-JNERE2	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	8192 words	3.3		8	SMALL OUTLINE	SOP8,.25		40.2	1.27 mm	85 Cel	8KX8	8K	1.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	10000000000000 Write/Erase Cycles	10 MHz	3.9 mm		SPI	65536 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	.000012 Amp	5.05 mm
MB85RS64TUPNF-G-JNERE2	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	8192 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	8KX8	8K	1.8 V	-55 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	10000000000000 Write/Erase Cycles	10 MHz	3.9 mm		SPI	65536 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.000012 Amp	5.05 mm
MB85RS64VYPNF-GS-BCE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2.3 mA	8192 words			8	SMALL OUTLINE	SOP8,.25		3.3	1.27 mm	125 Cel	8KX8	8K	2.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8	3	5.5 V	1.73 mm	10000000000000 Write/Erase Cycles	33 MHz	3.9 mm		SPI	65536 bit	2.7 V	DATA RETENTION TIME @ 125 DEGREE CENTIGRADE				.00003 Amp	4.89 mm
MB85RS64TPN-G-AMEWE1	Fujitsu	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.8 mA	8192 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		10	.5 mm	85 Cel	8KX8	8K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-N8		3.6 V	.75 mm	10000000000000 Write/Erase Cycles	10 MHz	2 mm		SPI	65536 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.000012 Amp	3 mm
MB85R4M2TFN-G-JAE2	Fujitsu	FRAM	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		10	.8 mm	85 Cel	256KX16	256K	1.8 V	-40 Cel		DUAL		R-PDSO-G44	3	3.6 V	1.2 mm	10000000000000 Write/Erase Cycles		10.16 mm			4194304 bit	1.8 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				.00015 Amp	18.41 mm	185 ns
MB85RDP16LXPN-G-AMEWE1	Fujitsu	FRAM	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.7 mA	2048 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		10	.5 mm	105 Cel	2KX8	2K	1.65 V	-40 Cel		DUAL	HARDWARE	R-PDSO-N8		1.95 V	.75 mm	10000000000000 Write/Erase Cycles	15 MHz	2 mm		SPI	16384 bit	1.65 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE				.000011 Amp	3 mm
MB85RS256APNF-G-JNERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	3.3	3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	32KX8	32K	3 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000000000 Write/Erase Cycles	25 MHz	3.9 mm	Not Qualified	SPI	262144 bit	3 V	DATA RETENTION TIME @ 55 DEGREE CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	.00005 Amp	5.05 mm
MB85RS256TYPNF-G-AWERE2	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.3 mA	32768 words	3.3		8	SMALL OUTLINE	SOP8,.25		10.9	1.27 mm	125 Cel	32KX8	32K	1.8 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.75 mm	10000000000000 Write/Erase Cycles	33 MHz	3.9 mm		SPI	262144 bit	1.8 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE		10	260	.00005 Amp	4.9 mm
MB85RS2MLYPNF-GS-AWE2	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3.5 mA	262144 words	1.8		8	SMALL OUTLINE	SOP8,.25		2.75	1.27 mm	125 Cel	256KX8	256K	1.7 V	-40 Cel		DUAL	HARDWARE	R-PDSO-G8		1.95 V	1.75 mm	10000000000000 Write/Erase Cycles	50 MHz	3.9 mm		SPI	2097152 bit	1.7 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE				.0002 Amp	4.9 mm

FRAMs

Ferroelectric Random-Access Memories (or FRAMs), are a type of non-volatile memory technology that combines the advantages of both traditional dynamic random-access memory (DRAM) and non-volatile memory (NVRAM) technologies. FRAMs store data using a ferroelectric material, which has the unique property of being able to retain data even when the power is removed.

FRAMs are used in a variety of fields, including industrial automation, automotive systems, smart meters, and more, where their combination of non-volatility, speed, and endurance can be advantageous. While they may not be as prevalent as other memory types like Flash or DRAM, FRAMs offer a unique set of features that make them suitable for specific use cases.

Here are some key features and characteristics of FRAMs:

Non-Volatile: FRAMs are non-volatile, meaning they can retain data even when the power supply is turned off. This is in contrast to traditional DRAM, which is volatile and loses data when power is removed.

Fast Write Speeds: FRAMs offer very fast write speeds, comparable to DRAM. This makes them suitable for applications where high-speed write operations are required.

Low Power Consumption: FRAMs typically consume less power than other non-volatile memory technologies like Flash memory. This makes them suitable for battery-powered devices and applications where power efficiency is critical.

High Endurance: FRAMs have a high endurance, meaning they can withstand a large number of write cycles without degrading. This is in contrast to some Flash memory technologies that have limited write endurance.

Bit-Addressable: FRAMs are bit-addressable, which means you can read or write individual bits of data. This granularity is useful in applications where precise control over specific data is required.

Radiation Resistance: FRAMs are resistant to radiation, which makes them suitable for use in aerospace and other high-radiation environments.

Limited Density: One limitation of FRAM technology is that it has historically had lower storage density compared to other non-volatile memory technologies like Flash. However, advancements in FRAM technology have been made to increase storage capacity.