Fujitsu FRAMs 59

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MB85RS2MTAPNF-G-BDE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.3 mA	262144 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	256KX8	256K	1.7 V	-40 Cel	DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.73 mm	10000000000000 Write/Erase Cycles	40 MHz	3.9 mm		SPI	2097152 bit	1.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE	NOT SPECIFIED	NOT SPECIFIED	.00005 Amp	4.89 mm
MB85RS2MTYPNF-G-AWERE2	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	262144 words	3.3		8	SMALL OUTLINE	SOP8,.25		2.75	1.27 mm	85 Cel	256KX8	256K	1.8 V	-40 Cel	DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	10000000000000 Write/Erase Cycles	50 MHz	3.9 mm		SPI	2097152 bit	1.8 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE			.00022 Amp	4.9 mm
MB85RS2MTYPNF-GS-AWERE2	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	4 mA	262144 words	3.3		8	SMALL OUTLINE	SOP8,.25		2.75	1.27 mm	125 Cel	256KX8	256K	1.8 V	-40 Cel	DUAL	HARDWARE	R-PDSO-G8	3	3.6 V	1.75 mm	10000000000000 Write/Erase Cycles	50 MHz	3.9 mm		SPI	2097152 bit	1.8 V	DATA RETENTION TIME @ 105 DEGREE CENTIGRADE	10	260	.00022 Amp	4.9 mm
MB89R118C1-DIAP15-P1	Fujitsu	FRAM-EMBEDDED		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD				2048 words			8	UNCASED CHIP	DIE OR CHIP		10		85 Cel	2KX8	2K		-20 Cel	UPPER		X-XUUC-N				1000000000000 Write/Erase Cycles					16384 bit		DATA RETENTION TIME @ 85 DEGREE CENTIGRADE
MB85R256FPF-G-BNDE1	Fujitsu	FRAM	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	32768 words	3.3		8	SMALL OUTLINE	SOP28,.45		10	1.27 mm	85 Cel	32KX8	32K	2.7 V	-40 Cel	DUAL		R-PDSO-G28		3.6 V	2.8 mm	1000000000000 Write/Erase Cycles		8.6 mm			262144 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE			.00005 Amp	17.75 mm	70 ns
MB85R256FPFCN-G-BNDE1	Fujitsu	FRAM	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	32768 words	3.3	3.3	8	SMALL OUTLINE	TSSOP28,.53,22	SRAMs	10	.55 mm	85 Cel	32KX8	32K	2.7 V	-40 Cel	DUAL		R-PDSO-G28		3.6 V	1.2 mm	1000000000000 Write/Erase Cycles		8 mm	Not Qualified		262144 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE	NOT SPECIFIED	NOT SPECIFIED	.00005 Amp	11.8 mm	70 ns
MB85RC128APNF-G-JNE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.375 mA	16384 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	16KX8	16K	2.7 V	-40 Cel	DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000000000 Write/Erase Cycles	1 MHz	3.9 mm		I2C	131072 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE			.00002 Amp	5.05 mm
MB85RC64APNF-G-JNE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.375 mA	8192 words	3.3	3/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	10	1.27 mm	85 Cel	8KX8	8K	2.7 V	-40 Cel	DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	I2C	65536 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE	NOT SPECIFIED	NOT SPECIFIED	.00002 Amp	5.05 mm
MB85RC64VPNF-G-JNERE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.13 mA	8192 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	8KX8	8K	3 V	-40 Cel	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000000000 Write/Erase Cycles	1 MHz	3.9 mm		I2C	65536 bit	3 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE			.00001 Amp	5.05 mm
MB85RS128BPNF-G-JNE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	6 mA	16384 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	16KX8	16K	2.7 V	-40 Cel	DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000000000 Write/Erase Cycles	33 MHz	3.9 mm		SPI	131072 bit	2.7 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE			.00005 Amp	5.05 mm
MB85RS64VPNF-G-JNE1	Fujitsu	FRAM	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	8192 words	3.3		8	SMALL OUTLINE	SOP8,.25		10	1.27 mm	85 Cel	8KX8	8K	3 V	-40 Cel	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000000000 Write/Erase Cycles	20 MHz	3.9 mm	Not Qualified	SPI	65536 bit	3 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE			.00002 Amp	5.05 mm

FRAMs

Ferroelectric Random-Access Memories (or FRAMs), are a type of non-volatile memory technology that combines the advantages of both traditional dynamic random-access memory (DRAM) and non-volatile memory (NVRAM) technologies. FRAMs store data using a ferroelectric material, which has the unique property of being able to retain data even when the power is removed.

FRAMs are used in a variety of fields, including industrial automation, automotive systems, smart meters, and more, where their combination of non-volatility, speed, and endurance can be advantageous. While they may not be as prevalent as other memory types like Flash or DRAM, FRAMs offer a unique set of features that make them suitable for specific use cases.

Here are some key features and characteristics of FRAMs:

Non-Volatile: FRAMs are non-volatile, meaning they can retain data even when the power supply is turned off. This is in contrast to traditional DRAM, which is volatile and loses data when power is removed.

Fast Write Speeds: FRAMs offer very fast write speeds, comparable to DRAM. This makes them suitable for applications where high-speed write operations are required.

Low Power Consumption: FRAMs typically consume less power than other non-volatile memory technologies like Flash memory. This makes them suitable for battery-powered devices and applications where power efficiency is critical.

High Endurance: FRAMs have a high endurance, meaning they can withstand a large number of write cycles without degrading. This is in contrast to some Flash memory technologies that have limited write endurance.

Bit-Addressable: FRAMs are bit-addressable, which means you can read or write individual bits of data. This granularity is useful in applications where precise control over specific data is required.

Radiation Resistance: FRAMs are resistant to radiation, which makes them suitable for use in aerospace and other high-radiation environments.

Limited Density: One limitation of FRAM technology is that it has historically had lower storage density compared to other non-volatile memory technologies like Flash. However, advancements in FRAM technology have been made to increase storage capacity.