MASK ROM MASK ROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
K3P6C1000F-TC100	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words	5		16	SMALL OUTLINE		8		.8 mm	70 Cel		2MX16	2M	0 Cel		DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	4.5 V			30	240		18.41 mm	100 ns
K3P5V2000D-SC10	Samsung	MASK ROM	COMMERCIAL	70	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	3.3	3.3	32	SMALL OUTLINE, SHRINK PITCH	SOP70,.63,32	16	MASK ROMs	.8 mm	70 Cel		512KX32	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-G70		3.6 V	3.1 mm	12.7 mm	Not Qualified	16777216 bit	3 V	ALSO CONFIGURABLE AS 512K X 32	e0			.00003 Amp	28.57 mm	100 ns
K3N7C4000C-DC12	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	4194304 words	5	5	16	IN-LINE	DIP42,.6		MASK ROMs	2.54 mm	70 Cel		4MX16	4M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		5.5 V	5.08 mm	15.24 mm	Not Qualified	67108864 bit	4.5 V		e0			.07 Amp	52.42 mm	120 ns
KM23C8000DG-15	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	5	5	8	SMALL OUTLINE	SOP32,.56		MASK ROMs	1.27 mm	70 Cel		1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	8388608 bit	4.5 V		e0			.00005 Amp	20.47 mm	150 ns
KM23V16005D-12	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words	3		16	IN-LINE		8		2.54 mm	70 Cel		1MX16	1M	0 Cel		DUAL	R-PDIP-T42		3.3 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	2.7 V	CAN ALSO BE OPERATED IN 3V TO 3.6V					52.42 mm	120 ns
K3N7C3000M-DC12	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	8388608 words	5	5	8	IN-LINE	DIP42,.6		MASK ROMs	2.54 mm	70 Cel		8MX8	8M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		5.5 V	5.08 mm	15.24 mm	Not Qualified	67108864 bit	4.5 V		e0				52.42 mm	120 ns
KM23V8000D	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	3	3/3.3	8	IN-LINE	DIP32,.6		MASK ROMs	2.54 mm	70 Cel		1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		3.3 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	2.7 V	CAN ALSO OPERATE AT 3V TO 3.6V SUPPLY	e0			.00003 Amp	41.91 mm	120 ns
KM23C16005AG-12	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	2097152 words	5	5	8	SMALL OUTLINE	SOP44,.63	16	MASK ROMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	3.1 mm	12.6 mm	Not Qualified	16777216 bit	4.5 V		e0			.00005 Amp	28.5 mm	120 ns
K3N6V4000E-DC12	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	2097152 words	3.3	3.3	16	IN-LINE	DIP42,.6		MASK ROMs	2.54 mm	70 Cel		2MX16	2M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		3.6 V	5.08 mm	15.24 mm	Not Qualified	33554432 bit	3 V		e0			.00003 Amp	52.42 mm	120 ns
KM23C8100BG-10	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	1048576 words	5	5	8	SMALL OUTLINE	SOP44,.63	16	MASK ROMs	1.27 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	3.1 mm	12.6 mm	Not Qualified	8388608 bit	4.5 V		e0			.00005 Amp	28.5 mm	100 ns
KM23C32005G-15	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	4194304 words	5	5	8	SMALL OUTLINE	SOP44,.63	16	MASK ROMs	1.27 mm	70 Cel	3-STATE	4MX8	4M	0 Cel	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	3.1 mm	12.6 mm	Not Qualified	33554432 bit	4.5 V		e0			.00005 Amp	28.5 mm	150 ns
KM23C8000C-12	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			60 mA	1048576 words	5	5	8	IN-LINE	DIP32,.6		MASK ROMs	2.54 mm	70 Cel		1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T32	3				Not Qualified	8388608 bit			e0			.00005 Amp		120 ns
K3P7V1000A-GC120	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4194304 words	3.3		16	SMALL OUTLINE		8		1.27 mm	70 Cel		4MX16	4M	0 Cel		DUAL	R-PDSO-G44		3.6 V	3.1 mm	12.6 mm	Not Qualified	67108864 bit	3 V			30	225		28.5 mm	120 ns
KM23C2001AG-15	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	5	5	8	SMALL OUTLINE	SOP32,.56		MASK ROMs	1.27 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	2097152 bit	4.5 V		e0			.04 Amp	20.47 mm	150 ns
K3N3V3000D-YC100	Samsung	MASK ROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	3.3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		512KX8	512K	0 Cel		DUAL	R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	4194304 bit	3 V			30	240		18.4 mm	100 ns
KM23V4100BFP-20	Samsung	MASK ROM	COMMERCIAL	44	WQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	3.3	3/3.3	8	FLATPACK, WINDOW	QFP44,.7SQ,32	16	MASK ROMs	.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	QUAD	S-PQFP-G44		3.6 V	2.8 mm	14 mm	Not Qualified	4194304 bit	2.7 V		e0			.00005 Amp	14 mm	200 ns
K3N4C1000D-TC150	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	5		16	SMALL OUTLINE, THIN PROFILE		8		.8 mm	70 Cel		512KX16	512K	0 Cel		DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	4.5 V			30	240		18.41 mm	150 ns
K3N7C1000C-GC15	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	4194304 words	5	5	16	SMALL OUTLINE	SOP44,.63	8	MASK ROMs	1.27 mm	70 Cel		4MX16	4M	0 Cel	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	3.1 mm	12.6 mm	Not Qualified	67108864 bit	4.5 V		e0			.00005 Amp	28.5 mm	150 ns
KM23C8100A-25	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	5	5	8	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e0			.00005 Amp	52.43 mm	250 ns
KM23C2100FP-15	Samsung	MASK ROM	COMMERCIAL	44	WQFP	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	5	5	8	FLATPACK, WINDOW	TQFP44,.6SQ,32	16	MASK ROMs	.8 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	QUAD	S-CQFP-G44		5.5 V		10 mm	Not Qualified	2097152 bit	4.5 V		e0			.0001 Amp	10 mm	150 ns
K3P5V1000F-DC100	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words	3.3		16	IN-LINE		8		2.54 mm	70 Cel		1MX16	1M	0 Cel		DUAL	R-PDIP-T42		3.6 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		52.42 mm	100 ns
KM23128SJI-20	Samsung	MASK ROM	INDUSTRIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		MOS	J BEND			75 mA	16384 words	5	5	8	CHIP CARRIER	LDCC28,.5SQ		MASK ROMs	1.27 mm	85 Cel		16KX8	16K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J28	3				Not Qualified	131072 bit			e0					200 ns
K3N3C1000D-DC120	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words	5		16	IN-LINE		8		2.54 mm	70 Cel		256KX16	256K	0 Cel		DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		52.43 mm	120 ns
K3P5C1000F-DC120	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words	5		16	IN-LINE		8		2.54 mm	70 Cel		1MX16	1M	0 Cel		DUAL	R-PDIP-T42		5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		52.42 mm	120 ns
KM23C4100AFP2-25	Samsung	MASK ROM	COMMERCIAL	44	WQFP	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	8	FLATPACK, WINDOW	TQFP44,.6SQ,32	16	MASK ROMs	.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	QUAD	S-CQFP-G44		5.5 V		10 mm	Not Qualified	4194304 bit	4.5 V		e0			.00005 Amp	10 mm	250 ns
KM23C16000C-10	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	2097152 words	5	5	8	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		2MX8	2M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V	CONFIGURABLE AS 1M X 16	e0			.00005 Amp	52.42 mm	100 ns
KM23V4100DET	Samsung	MASK ROM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	85 Cel		512KX8	512K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G44		3.3 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V	USER CONFIGURABLE AS 256K X 16; CAN ALSO OPERATE AT 3V TO 3.6V SUPPLY	e0			.00003 Amp	18.41 mm	120 ns
KM23C64000G-12	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	4194304 words	5	5	16	SMALL OUTLINE	SOP44,.63	8	MASK ROMs	1.27 mm	70 Cel		4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44		5.5 V	3.1 mm	12.6 mm	Not Qualified	67108864 bit	4.5 V	CONFIGURABLE AS 4M X 16	e0			.00005 Amp	28.5 mm	120 ns
KM23C4000A-20	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	8	IN-LINE	DIP32,.6		MASK ROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			.00005 Amp	41.91 mm	200 ns
KM23C8005BG-10	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	1048576 words	5	5	8	SMALL OUTLINE	SOP32,.56		MASK ROMs	1.27 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	8388608 bit	4.5 V		e0			.00005 Amp	20.47 mm	100 ns
KM23C16000C-15	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	2097152 words	5	5	8	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		2MX8	2M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V	CONFIGURABLE AS 1M X 16	e0			.00005 Amp	52.42 mm	150 ns
KM23257JI-25	Samsung	MASK ROM	INDUSTRIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		MOS	J BEND			75 mA	32768 words			8	CHIP CARRIER	LDCC28,.5SQ		MASK ROMs	1.27 mm	85 Cel		32KX8	32K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J28	3				Not Qualified	262144 bit			e0					250 ns
KM23C1010J-12	Samsung	MASK ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	5	5	8	CHIP CARRIER	LDCC32,.5X.6		MASK ROMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	QUAD	R-PQCC-J32		5.5 V	3.55 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V		e0			.0001 Amp	13.97 mm	120 ns
KM23C8105D-12	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	524288 words	5	5	16	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		512KX16	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T42		5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V	CONFIGURABLE AS 512K X 16	e0			.00005 Amp	52.42 mm	120 ns
K3N6C1000F-GC150	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words	5		16	SMALL OUTLINE		8		1.27 mm	70 Cel		2MX16	2M	0 Cel		DUAL	R-PDSO-G44		5.5 V	3.1 mm	12.6 mm	Not Qualified	33554432 bit	4.5 V			30	225		28.5 mm	150 ns
KM23V64000B-10	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4194304 words	3.3		16	IN-LINE				2.54 mm	70 Cel		4MX16	4M	0 Cel		DUAL	R-PDIP-T42		3.6 V	5.08 mm	15.24 mm	Not Qualified	67108864 bit	3 V						52.42 mm	100 ns
K3N7C1000B-YC15	Samsung	MASK ROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	4194304 words	5	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20	8	MASK ROMs	.5 mm	70 Cel		4MX16	4M	0 Cel	TIN LEAD	DUAL	R-PDSO-G48		5.5 V	1.2 mm	12 mm	Not Qualified	67108864 bit	4.5 V	ALL INPUTS AND OUTPUTS TTL COMPATIBLE	e0			.0001 Amp	16.4 mm	150 ns
KM23C8105B-10	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	1048576 words	5	5	8	IN-LINE	DIP42,.6	16	MASK ROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e0			.00005 Amp	52.43 mm	100 ns
K3N5U1000E-GC12	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	1048576 words	3	3	16	SMALL OUTLINE	SOP44,.63	8	MASK ROMs	1.27 mm	70 Cel		1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44		3.3 V	3.1 mm	12.6 mm	Not Qualified	16777216 bit	2.7 V		e0			.00003 Amp	28.5 mm	120 ns
K3N7C1000B-TC120	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4194304 words	5		16	SMALL OUTLINE, THIN PROFILE		8		.8 mm	70 Cel		4MX16	4M	0 Cel		DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	4.5 V			30	240		18.41 mm	120 ns
K3N4V3000D-GC10	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	3.3	3.3	8	SMALL OUTLINE	SOP32,.56		MASK ROMs	1.27 mm	70 Cel		1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		3.6 V	3 mm	11.43 mm	Not Qualified	8388608 bit	3 V	TTL COMPATIBLE I/O	e0			.00003 Amp	20.47 mm	100 ns
K3N4C1000D-GC120	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	5		16	SMALL OUTLINE		8		1.27 mm	70 Cel		512KX16	512K	0 Cel		DUAL	R-PDSO-G44		5.5 V	3.1 mm	12.6 mm	Not Qualified	8388608 bit	4.5 V						28.5 mm	120 ns
KM23C4000DTY-10	Samsung	MASK ROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		MASK ROMs	.5 mm	70 Cel		512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	4194304 bit	4.5 V		e0			.00005 Amp	18.4 mm	100 ns
K3N6C1000E-YC100	Samsung	MASK ROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words	5		16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	70 Cel		2MX16	2M	0 Cel		DUAL	R-PDSO-G48		5.5 V	1.2 mm	12 mm	Not Qualified	33554432 bit	4.5 V			30	240		16.4 mm	100 ns
K3N4C1000E-GC12	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			50 mA	524288 words	5	5	16	SMALL OUTLINE	SOP44,.63	8	MASK ROMs	1.27 mm	70 Cel		512KX16	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-G44	3				Not Qualified	8388608 bit			e0			.00005 Amp		120 ns
KM23C8000C-20	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			60 mA	1048576 words	5	5	8	IN-LINE	DIP32,.6		MASK ROMs	2.54 mm	70 Cel		1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T32	3				Not Qualified	8388608 bit			e0			.00005 Amp		200 ns
K3P7U1000A-GC120	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4194304 words	3		16	SMALL OUTLINE		8		1.27 mm	70 Cel		4MX16	4M	0 Cel		DUAL	R-PDSO-G44		3.3 V	3.1 mm	12.6 mm	Not Qualified	67108864 bit	2.7 V			30	225		28.5 mm	120 ns
KM23C4000BG-20	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	5	5	8	SMALL OUTLINE	SOP32,.56		MASK ROMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	4194304 bit	4.5 V		e0			.00005 Amp	20.47 mm	200 ns

MASK ROM

Mask ROM, or Read-Only Memory, is a type of non-volatile computer memory that is programmed during the manufacturing process. Mask ROM is designed to permanently store data and cannot be reprogrammed after it has been manufactured.

Mask ROM is created by a process known as photolithography. This process involves using a mask, or template, to expose specific areas of a silicon wafer to ultraviolet light. The areas that are exposed to the light are then etched away, leaving behind the patterns that make up the memory cells. Once the memory cells have been created, they are permanently programmed with the data that they will store.

Mask ROM is commonly used in devices that require permanent storage of data, such as game consoles, calculators, and other electronic devices. Because the data is permanently programmed during manufacturing, mask ROM provides a reliable and secure way to store critical data, such as system settings, firmware, and other important information.

One of the advantages of using mask ROM is that it is a cost-effective way to produce large quantities of memory. Because the data is programmed during the manufacturing process, the cost per unit is relatively low compared to other types of non-volatile memory, such as EEPROM or flash memory.