MASK ROM MASK ROM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
KM23V8100B-20	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	3.3	3/3.3	8	IN-LINE	DIP42,.6	16	MASK ROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		3.6 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	2.7 V		e0			.00005 Amp	52.43 mm	200 ns
KM23V8000C-20	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			30 mA	1048576 words	3.3	3.3	8	IN-LINE	DIP32,.6		MASK ROMs	2.54 mm	70 Cel		1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T32	3				Not Qualified	8388608 bit			e0			.00005 Amp		200 ns
K3N3C1000D-DC12	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	5	5	16	IN-LINE	DIP40,.6	8	MASK ROMs	2.54 mm	70 Cel		256KX16	256K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	ALL INPUTS AND OUTPUTS TTL COMPATIBLE	e0			.00005 Amp	52.42 mm	120 ns
K3P7C1000B-YC100	Samsung	MASK ROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4194304 words	5		16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	70 Cel		4MX16	4M	0 Cel		DUAL	R-PDSO-G48		5.5 V	1.2 mm	12 mm	Not Qualified	67108864 bit	4.5 V			30	240		16.4 mm	100 ns
K3N6V1000E-YC12	Samsung	MASK ROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	2097152 words	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20	8	MASK ROMs	.5 mm	70 Cel		2MX16	2M	0 Cel	TIN LEAD	DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	33554432 bit	3 V		e0			.00003 Amp	16.4 mm	120 ns
KM23V32000DETY-10	Samsung	MASK ROM	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words	3		16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	85 Cel		2MX16	2M	-20 Cel		DUAL	R-PDSO-G48		3.3 V	1.2 mm	12 mm	Not Qualified	33554432 bit	2.7 V	USER SELECTABLE 3.3V VCC					16.4 mm	100 ns
K3N5U1000E-TC12	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	1048576 words	3	3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	70 Cel		1MX16	1M	0 Cel	TIN LEAD	DUAL	R-PDSO-G44		3.3 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	2.7 V	ALL INPUTS AND OUTPUTS TTL COMPATIBLE	e0			.00003 Amp	18.41 mm	120 ns
KM23128SPI-15	Samsung	MASK ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE			75 mA	16384 words	5	5	8	IN-LINE	DIP28,.6		MASK ROMs	2.54 mm	85 Cel		16KX8	16K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28	3				Not Qualified	131072 bit			e0					150 ns
KM23V8100C-25	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			30 mA	524288 words	3.3	3.3	16	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		512KX16	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T42	3				Not Qualified	8388608 bit			e0			.00005 Amp		250 ns
KM23V128000TY-12	Samsung	MASK ROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8388608 words	3		16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	70 Cel		8MX16	8M	0 Cel		DUAL	R-PDSO-G48		3.3 V	1.2 mm	12 mm	Not Qualified	134217728 bit	2.7 V						16.4 mm	120 ns
KM23C4100HFP-12	Samsung	MASK ROM	COMMERCIAL	44	WQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	5	5	8	FLATPACK, WINDOW	QFP44,.7SQ,32	16	MASK ROMs	.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	QUAD	S-PQFP-G44		5.5 V	2.8 mm	14 mm	Not Qualified	4194304 bit	4.5 V		e0			.00005 Amp	14 mm	120 ns
K3N9U1000M-YC	Samsung	MASK ROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8388608 words	3		16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	70 Cel		8MX16	8M	0 Cel		DUAL	R-PDSO-G48		3.3 V	1.2 mm	12 mm	Not Qualified	134217728 bit	2.7 V						16.4 mm	120 ns
KM23C8001H-15	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	5	5	8	IN-LINE	DIP32,.6		MASK ROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e0			.05 Amp	41.91 mm	150 ns
KM23V8100DG-10	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	3.3		16	SMALL OUTLINE		8		1.27 mm	70 Cel		512KX16	512K	0 Cel		DUAL	R-PDSO-G44		3.6 V	3.1 mm	12.6 mm	Not Qualified	8388608 bit	3 V	CONFIGURABLE AS 512K X 16					28.5 mm	100 ns
KM23C1000-15	Samsung	MASK ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	5	5	8	IN-LINE	DIP28,.6		MASK ROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			.0001 Amp	36.45 mm	150 ns
K3N5V1000F-GC120	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words	3.3		16	SMALL OUTLINE		8		1.27 mm	70 Cel		1MX16	1M	0 Cel		DUAL	R-PDSO-G44		3.6 V	3.1 mm	12.6 mm	Not Qualified	16777216 bit	3 V			30	225		28.5 mm	120 ns
K3N3U3000D-YE120	Samsung	MASK ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		512KX8	512K	-20 Cel		DUAL	R-PDSO-G32		3.3 V	1.2 mm	8 mm	Not Qualified	4194304 bit	2.7 V			30	240		18.4 mm	120 ns
K3P7V1000A-GC100	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4194304 words	3.3		16	SMALL OUTLINE		8		1.27 mm	70 Cel		4MX16	4M	0 Cel		DUAL	R-PDSO-G44		3.6 V	3.1 mm	12.6 mm	Not Qualified	67108864 bit	3 V			30	225		28.5 mm	100 ns
KM23C4000D-10	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	8	IN-LINE	DIP32,.6		MASK ROMs	2.54 mm	70 Cel		512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			.00005 Amp	41.91 mm	100 ns
KM23C64000-10	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	4194304 words	5	5	16	IN-LINE	DIP42,.6		MASK ROMs	2.54 mm	70 Cel		4MX16	4M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		5.5 V	5.08 mm	15.24 mm	Not Qualified	67108864 bit	4.5 V		e0			.05 Amp	52.42 mm	100 ns
K3P4U1000D-TE120	Samsung	MASK ROM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	3		16	SMALL OUTLINE, THIN PROFILE		8		.8 mm	85 Cel		512KX16	512K	-20 Cel		DUAL	R-PDSO-G44		3.3 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	2.7 V			30	240		18.41 mm	120 ns
K3N3U3000D-AE950	Samsung	MASK ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		512KX8	512K	-20 Cel		DUAL	R-PDSO-G32		3.3 V	1.2 mm	8 mm	Not Qualified	4194304 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		11.8 mm	95 ns
K3N4C1000E-DC150	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words	5		16	IN-LINE		8		2.54 mm	70 Cel		512KX16	512K	0 Cel		DUAL	R-PDIP-T42		5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		52.43 mm	150 ns
KM23C32000G-15	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	5	5	8	SMALL OUTLINE	SOP44,.63	16	MASK ROMs	1.27 mm	70 Cel	3-STATE	4MX8	4M	0 Cel	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	3.1 mm	12.6 mm	Not Qualified	33554432 bit	4.5 V		e0			.00005 Amp	28.5 mm	150 ns
KM23V16205BSG-10	Samsung	MASK ROM	COMMERCIAL	70	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	3.3	3.3	16	SMALL OUTLINE, SHRINK PITCH	SOP70,.63,32	16	MASK ROMs	.8 mm	70 Cel		1MX16	1M	0 Cel	TIN LEAD	DUAL	R-PDSO-G70		3.6 V	3.1 mm	12.7 mm	Not Qualified	16777216 bit	3 V	TTL COMPATIBLE I/O; CONFIGURABLE AS 512K X 32; PAGE ACCESS TIME = 30NS	e0			.00003 Amp	28.57 mm	100 ns
KM23C8001B-15	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	1048576 words	5	5	8	IN-LINE	DIP32,.6		MASK ROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e0			.06 Amp	41.91 mm	150 ns
K3P6U1000D-YE10	Samsung	MASK ROM	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	4194304 words	3	3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20	8	MASK ROMs	.5 mm	85 Cel		4MX8	4M	-20 Cel	TIN LEAD	DUAL	R-PDSO-G48		3.3 V	1.2 mm	12 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONFIGURABLE AS 2M X 16	e0			.00003 Amp	16.4 mm	100 ns
K3P7U1000B-FC12	Samsung	MASK ROM	COMMERCIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	4194304 words	3	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	8	MASK ROMs	.75 mm	70 Cel		4MX16	4M	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B48		3.3 V	1.2 mm	9 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONFIGURABLE AS 4M X 16	e0			.00005 Amp	9 mm	120 ns
K3P7C1000B-TC10	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	150 mA	4194304 words	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	70 Cel		4MX16	4M	0 Cel	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	4.5 V	ALSO CONFIGURABLE AS 4M X 16	e0			.0001 Amp	18.41 mm	100 ns
KM2365SJ-25	Samsung	MASK ROM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		MOS	J BEND			60 mA	8192 words	5	5	8	CHIP CARRIER	LDCC28,.5SQ		MASK ROMs	1.27 mm	70 Cel		8KX8	8K	0 Cel	TIN LEAD	QUAD	S-PQCC-J28	3				Not Qualified	65536 bit			e0					250 ns
KM23C32100FP-15	Samsung	MASK ROM	COMMERCIAL	64	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	4194304 words	5	5	8	FLATPACK	QFP64,.7X.95,40	16	MASK ROMs	1 mm	70 Cel	3-STATE	4MX8	4M	0 Cel	TIN LEAD	QUAD	R-PQFP-G64		5.5 V	2.75 mm	14 mm	Not Qualified	33554432 bit	4.5 V		e0			.0001 Amp	20 mm	150 ns
K3N6V1000F-TC100	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words	3.3		16	SMALL OUTLINE, THIN PROFILE		8		.8 mm	70 Cel		2MX16	2M	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	3 V			30	240		18.41 mm	100 ns
KM23C8000C-15	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			60 mA	1048576 words	5	5	8	IN-LINE	DIP32,.6		MASK ROMs	2.54 mm	70 Cel		1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T32	3				Not Qualified	8388608 bit			e0			.00005 Amp		150 ns
K3P6C1000B-TC100	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words	5		16	SMALL OUTLINE, THIN PROFILE		8		.8 mm	70 Cel		2MX16	2M	0 Cel		DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	4.5 V			30	240		18.41 mm	100 ns
K3N3S3000D-YE25	Samsung	MASK ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		MASK ROMs	.5 mm	85 Cel		512KX8	512K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G32		2.7 V	1.2 mm	8 mm	Not Qualified	4194304 bit	2.3 V	TTL COMPATIBLE I/O	e0			.00003 Amp	18.4 mm	250 ns
K3N5V1000F-TC120	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words	3.3		16	SMALL OUTLINE, THIN PROFILE		8		.8 mm	70 Cel		1MX16	1M	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V			30	240		18.41 mm	120 ns
K3N7C1000C-GC120	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4194304 words	5		16	SMALL OUTLINE		8		1.27 mm	70 Cel		4MX16	4M	0 Cel		DUAL	R-PDSO-G44		5.5 V	3.1 mm	12.6 mm	Not Qualified	67108864 bit	4.5 V			30	225		28.5 mm	120 ns
KM23V8100D-12	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words	3		16	IN-LINE		8		2.54 mm	70 Cel		512KX16	512K	0 Cel		DUAL	R-PDIP-T42		3.3 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	2.7 V	CONFIGURABLE AS 512K X 16					52.42 mm	120 ns
K3N7C1000B-GC100	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4194304 words	5		16	SMALL OUTLINE		8		1.27 mm	70 Cel		4MX16	4M	0 Cel		DUAL	R-PDSO-G44		5.5 V	3.1 mm	12.6 mm	Not Qualified	67108864 bit	4.5 V			30	225		28.5 mm	100 ns
KM23V8100DT-10	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	3.3		16	SMALL OUTLINE, THIN PROFILE		8		.8 mm	70 Cel		512KX16	512K	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	3 V	CONFIGURABLE AS 512K X 16					18.41 mm	100 ns
K3N3V3000D-DC	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			25 mA	524288 words	3.3	3.3	8	IN-LINE	DIP32,.6		MASK ROMs	2.54 mm	70 Cel		512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32					Not Qualified	4194304 bit			e0			.00003 Amp		100 ns
K3P4V1000D-GC100	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	3.3		16	SMALL OUTLINE		8		1.27 mm	70 Cel		512KX16	512K	0 Cel		DUAL	R-PDSO-G44		3.6 V	3.1 mm	12.6 mm	Not Qualified	8388608 bit	3 V			30	225		28.5 mm	100 ns
KM23C4100CG-15	Samsung	MASK ROM	COMMERCIAL	40	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			60 mA	262144 words	5	5	16	SMALL OUTLINE	SOP40,.56	8	MASK ROMs	1.27 mm	70 Cel		256KX16	256K	0 Cel	TIN LEAD	DUAL	R-PDSO-G40	3				Not Qualified	4194304 bit			e0			.00005 Amp		150 ns
KM23C4100HFP2-10	Samsung	MASK ROM	COMMERCIAL	44	WQFP	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	5	5	8	FLATPACK, WINDOW	TQFP44,.6SQ,32	16	MASK ROMs	.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	QUAD	S-CQFP-G44		5.5 V		10 mm	Not Qualified	4194304 bit	4.5 V		e0			.0001 Amp	10 mm	100 ns
KM23S32000DTY-15	Samsung	MASK ROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words	2.5		16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	70 Cel		2MX16	2M	0 Cel		DUAL	R-PDSO-G48		2.7 V	1.2 mm	12 mm	Not Qualified	33554432 bit	2.3 V	CONFIGURABLE AS 2M X 16					16.4 mm	150 ns
K3N3V3000D-YE10	Samsung	MASK ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		MASK ROMs	.5 mm	85 Cel		512KX8	512K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE I/O	e0			.00003 Amp	18.4 mm	100 ns
K3P4C1000E-DC120	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words	5		16	IN-LINE		8		2.54 mm	70 Cel		512KX16	512K	0 Cel		DUAL	R-PDIP-T42		5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		52.43 mm	120 ns
K3P5U1000F-TC12	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	3	3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	70 Cel		1MX16	1M	0 Cel	TIN LEAD	DUAL	R-PDSO-G44		3.3 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	2.7 V		e0			.00003 Amp	18.41 mm	120 ns

MASK ROM

Mask ROM, or Read-Only Memory, is a type of non-volatile computer memory that is programmed during the manufacturing process. Mask ROM is designed to permanently store data and cannot be reprogrammed after it has been manufactured.

Mask ROM is created by a process known as photolithography. This process involves using a mask, or template, to expose specific areas of a silicon wafer to ultraviolet light. The areas that are exposed to the light are then etched away, leaving behind the patterns that make up the memory cells. Once the memory cells have been created, they are permanently programmed with the data that they will store.

Mask ROM is commonly used in devices that require permanent storage of data, such as game consoles, calculators, and other electronic devices. Because the data is permanently programmed during manufacturing, mask ROM provides a reliable and secure way to store critical data, such as system settings, firmware, and other important information.

One of the advantages of using mask ROM is that it is a cost-effective way to produce large quantities of memory. Because the data is programmed during the manufacturing process, the cost per unit is relatively low compared to other types of non-volatile memory, such as EEPROM or flash memory.