28 MASK ROM 209

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
KM23256SJ-15	Samsung	MASK ROM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		MOS	J BEND			75 mA	32768 words	5	5	8	CHIP CARRIER	LDCC28,.5SQ	MASK ROMs	1.27 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	QUAD	S-PQCC-J28	3				Not Qualified	262144 bit		e0			150 ns
KM23128J-25	Samsung	MASK ROM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		MOS	J BEND			75 mA	16384 words	5	5	8	CHIP CARRIER	LDCC28,.5SQ	MASK ROMs	1.27 mm	70 Cel		16KX8	16K	0 Cel	TIN LEAD	QUAD	S-PQCC-J28	3				Not Qualified	131072 bit		e0			250 ns
KM23257SJ-15	Samsung	MASK ROM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		MOS	J BEND			75 mA	32768 words			8	CHIP CARRIER	LDCC28,.5SQ	MASK ROMs	1.27 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	QUAD	S-PQCC-J28	3				Not Qualified	262144 bit		e0			150 ns
KM23256J-25	Samsung	MASK ROM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		MOS	J BEND			75 mA	32768 words	5	5	8	CHIP CARRIER	LDCC28,.5SQ	MASK ROMs	1.27 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	QUAD	S-PQCC-J28	3				Not Qualified	262144 bit		e0			250 ns
KM23128SPI-20	Samsung	MASK ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE			75 mA	16384 words	5	5	8	IN-LINE	DIP28,.6	MASK ROMs	2.54 mm	85 Cel		16KX8	16K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28	3				Not Qualified	131072 bit		e0			200 ns
KM23257JI-15	Samsung	MASK ROM	INDUSTRIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		MOS	J BEND			75 mA	32768 words			8	CHIP CARRIER	LDCC28,.5SQ	MASK ROMs	1.27 mm	85 Cel		32KX8	32K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J28	3				Not Qualified	262144 bit		e0			150 ns
KM23257SJ-25	Samsung	MASK ROM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		MOS	J BEND			75 mA	32768 words			8	CHIP CARRIER	LDCC28,.5SQ	MASK ROMs	1.27 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	QUAD	S-PQCC-J28	3				Not Qualified	262144 bit		e0			250 ns
KM2365P-20	Samsung	MASK ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE			60 mA	8192 words	5	5	8	IN-LINE	DIP28,.6	MASK ROMs	2.54 mm	70 Cel		8KX8	8K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28	3				Not Qualified	65536 bit		e0			200 ns
KM23256P-20	Samsung	MASK ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE			75 mA	32768 words	5	5	8	IN-LINE	DIP28,.6	MASK ROMs	2.54 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28	3				Not Qualified	262144 bit		e0			200 ns
KM2365PI-20	Samsung	MASK ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE			60 mA	8192 words	5	5	8	IN-LINE	DIP28,.6	MASK ROMs	2.54 mm	85 Cel		8KX8	8K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28	3				Not Qualified	65536 bit		e0			200 ns
KM23257SPI-20	Samsung	MASK ROM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE			75 mA	32768 words			8	IN-LINE	DIP28,.6	MASK ROMs	2.54 mm	125 Cel		32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28	3				Not Qualified	262144 bit		e0			200 ns
KM23257P-25	Samsung	MASK ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE			75 mA	32768 words			8	IN-LINE	DIP28,.6	MASK ROMs	2.54 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28	3				Not Qualified	262144 bit		e0			250 ns
KM2365SP-20	Samsung	MASK ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE			60 mA	8192 words	5	5	8	IN-LINE	DIP28,.6	MASK ROMs	2.54 mm	70 Cel		8KX8	8K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28	3				Not Qualified	65536 bit		e0			200 ns
KM23C1001-20	Samsung	MASK ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	5	5	8	IN-LINE	DIP28,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e0	.04 Amp	36.45 mm	200 ns
KM23256SHR-27	Samsung	MASK ROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			75 mA	32768 words	5	5	8	IN-LINE	DIP28,.6	MASK ROMs	2.54 mm	125 Cel		32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-XDIP-T28	3				Not Qualified	262144 bit		e0			270 ns
KM23256SJI-15	Samsung	MASK ROM	INDUSTRIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		MOS	J BEND			75 mA	32768 words	5	5	8	CHIP CARRIER	LDCC28,.5SQ	MASK ROMs	1.27 mm	85 Cel		32KX8	32K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J28	3				Not Qualified	262144 bit		e0			150 ns
KM23128PI-25	Samsung	MASK ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE			75 mA	16384 words	5	5	8	IN-LINE	DIP28,.6	MASK ROMs	2.54 mm	85 Cel		16KX8	16K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28	3				Not Qualified	131072 bit		e0			250 ns

MASK ROM

Mask ROM, or Read-Only Memory, is a type of non-volatile computer memory that is programmed during the manufacturing process. Mask ROM is designed to permanently store data and cannot be reprogrammed after it has been manufactured.

Mask ROM is created by a process known as photolithography. This process involves using a mask, or template, to expose specific areas of a silicon wafer to ultraviolet light. The areas that are exposed to the light are then etched away, leaving behind the patterns that make up the memory cells. Once the memory cells have been created, they are permanently programmed with the data that they will store.

Mask ROM is commonly used in devices that require permanent storage of data, such as game consoles, calculators, and other electronic devices. Because the data is permanently programmed during manufacturing, mask ROM provides a reliable and secure way to store critical data, such as system settings, firmware, and other important information.

One of the advantages of using mask ROM is that it is a cost-effective way to produce large quantities of memory. Because the data is programmed during the manufacturing process, the cost per unit is relatively low compared to other types of non-volatile memory, such as EEPROM or flash memory.