32 MASK ROM 457

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
TMS47256-25FML	Texas Instruments	MASK ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	NMOS	J BEND	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	5	5	8	CHIP CARRIER	LDCC32,.5X.6	MASK ROMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		13.97 mm	250 ns
TMS47C256-25FML	Texas Instruments	MASK ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	5	8	CHIP CARRIER	LDCC32,.5X.6	MASK ROMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		13.97 mm	250 ns
TMS47C1024-20FML	Texas Instruments	MASK ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		131072 words	5	5	8	CHIP CARRIER	LDCC32,.5X.6	MASK ROMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel		QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		13.97 mm	200 ns
TMS47C512-20FML	Texas Instruments	MASK ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words	5	5	8	CHIP CARRIER	LDCC32,.5X.6	MASK ROMs	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		13.97 mm	200 ns
TMS47C1024-25FML	Texas Instruments	MASK ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		131072 words	5	5	8	CHIP CARRIER	LDCC32,.5X.6	MASK ROMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel		QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		13.97 mm	250 ns
TMS47C1024-30FML	Texas Instruments	MASK ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		131072 words	5	5	8	CHIP CARRIER	LDCC32,.5X.6	MASK ROMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel		QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		13.97 mm	300 ns
TMS47C256-20FML	Texas Instruments	MASK ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	5	8	CHIP CARRIER	LDCC32,.5X.6	MASK ROMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		13.97 mm	200 ns
TMS47C512-30FML	Texas Instruments	MASK ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words	5	5	8	CHIP CARRIER	LDCC32,.5X.6	MASK ROMs	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		13.97 mm	300 ns
TMS47256-20FML	Texas Instruments	MASK ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	NMOS	J BEND	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	5	5	8	CHIP CARRIER	LDCC32,.5X.6	MASK ROMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		13.97 mm	200 ns
TMS47C256-15FML	Texas Instruments	MASK ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	5	8	CHIP CARRIER	LDCC32,.5X.6	MASK ROMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		13.97 mm	150 ns
TMS47C512-25FML	Texas Instruments	MASK ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words	5	5	8	CHIP CARRIER	LDCC32,.5X.6	MASK ROMs	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		13.97 mm	250 ns
TMS47256-30FML	Texas Instruments	MASK ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	NMOS	J BEND	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	5	5	8	CHIP CARRIER	LDCC32,.5X.6	MASK ROMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		13.97 mm	300 ns
M23C2001B1	STMicroelectronics	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words	5		8	IN-LINE			2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel		DUAL	R-PDIP-T32	5.5 V		15.24 mm	Not Qualified	2097152 bit	4.5 V	AUTOMATIC POWER-DOWN						120 ns
M23C1001B1	STMicroelectronics	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	5	5	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-PDIP-T32	5.5 V	5.08 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	AUTOMATIC POWER-DOWN	e0			.00002 Amp	41.91 mm	100 ns
M23C4001B1	STMicroelectronics	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words	5		8	IN-LINE			2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel		DUAL	R-PDIP-T32	5.5 V		15.24 mm	Not Qualified	4194304 bit	4.5 V	AUTOMATIC POWER-DOWN						120 ns
AM27X512-70JC	Infineon Technologies	MASK ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	5	5	8	CHIP CARRIER	LDCC32,.5X.6	MASK ROMs	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	QUAD	R-PQCC-J32	5.5 V			Not Qualified	524288 bit	4.5 V		e0			.0001 Amp		70 ns
AM27X512-70JI	Infineon Technologies	MASK ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	5	5	8	CHIP CARRIER	LDCC32,.5X.6	MASK ROMs	1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	QUAD	R-PQCC-J32	5.5 V			Not Qualified	524288 bit	4.5 V		e0			.0001 Amp		70 ns
TC538000F-20	Toshiba	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			50 mA	1048576 words	5	5	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	70 Cel		1MX8	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32				Not Qualified	8388608 bit			e0			.0001 Amp		200 ns
TC534000P	Toshiba	MASK ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words	5		8	IN-LINE			2.54 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T32	5.5 V	4.8 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0				42 mm	250 ns
TC532000AF	Toshiba	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words	5		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	R-PDSO-G32	5.5 V	2.8 mm	10.7 mm	Not Qualified	2097152 bit	4.5 V		e0				20.6 mm	150 ns
TC538000AF	Toshiba	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words	5		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDSO-G32	5.5 V	2.8 mm	10.7 mm	Not Qualified	8388608 bit	4.5 V		e0				20.6 mm	150 ns
TC534000AP	Toshiba	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T32	5.5 V	4.8 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			.00002 Amp	42 mm	150 ns
TC531001CP-15	Toshiba	MASK ROM	OTHER	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	5		8	IN-LINE			2.54 mm	70 Cel	3-STATE	128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T32	5.5 V	4.8 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0				42 mm	150 ns
TC532000AP	Toshiba	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words	5		8	IN-LINE			2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	R-PDIP-T32	5.5 V	4.8 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V		e0				42 mm	150 ns
TC534000F(TP1)	Toshiba	MASK ROM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE			1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	TIN LEAD	DUAL	R-PDSO-G32	5.5 V	2.8 mm	10.7 mm	Not Qualified	4194304 bit	4.5 V		e0				20.6 mm	250 ns
TC532000AP-15	Toshiba	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			50 mA	262144 words	5	5	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel		256KX8	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32				Not Qualified	2097152 bit			e0			.00002 Amp		150 ns
TC534000F(EL)	Toshiba	MASK ROM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE			1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	TIN LEAD	DUAL	R-PDSO-G32	5.5 V	2.8 mm	10.7 mm	Not Qualified	4194304 bit	4.5 V		e0				20.6 mm	250 ns
TC531001CF-12	Toshiba	MASK ROM	OTHER	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	5	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-PDSO-G32	5.5 V	2.8 mm	10.7 mm	Not Qualified	1048576 bit	4.5 V		e0			.0002 Amp	20.6 mm	120 ns
TC534000AF	Toshiba	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-G32	5.5 V	2.8 mm	10.7 mm	Not Qualified	4194304 bit	4.5 V		e0			.00002 Amp	20.6 mm	150 ns
TC534000P-20	Toshiba	MASK ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			40 mA	524288 words	5	5	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	85 Cel		512KX8	512K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32				Not Qualified	4194304 bit			e0			.00002 Amp		200 ns
TC532000AF-15	Toshiba	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			50 mA	262144 words	5	5	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	70 Cel		256KX8	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32				Not Qualified	2097152 bit			e0			.00002 Amp		150 ns
TC534000AF(EL)	Toshiba	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-G32	5.5 V	2.8 mm	10.7 mm	Not Qualified	4194304 bit	4.5 V		e0				20.6 mm	150 ns
TC534000F	Toshiba	MASK ROM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	524288 words	5	5	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	TIN LEAD	DUAL	R-PDSO-G32	5.5 V	2.8 mm	10.7 mm	Not Qualified	4194304 bit	4.5 V		e0			.00002 Amp	20.6 mm	250 ns
TC534000CF	Toshiba	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel		DUAL	R-PDSO-G32	5.5 V	2.8 mm	10.7 mm	Not Qualified	4194304 bit	4.5 V						20.6 mm	120 ns
TC534000AFT	Toshiba	MASK ROM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-G32	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0				20.95 mm	150 ns
TC534000AF(TP2)	Toshiba	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-G32	5.5 V	2.8 mm	10.7 mm	Not Qualified	4194304 bit	4.5 V		e0				20.6 mm	150 ns
TC531001CP	Toshiba	MASK ROM	OTHER	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	131072 words	5	5	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T32	5.5 V	4.8 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			.0002 Amp	42 mm	150 ns
TC538000P-20	Toshiba	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			50 mA	1048576 words	5	5	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel		1MX8	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32				Not Qualified	8388608 bit			e0			.0001 Amp		200 ns
TC534000F(TP2)	Toshiba	MASK ROM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE			1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	TIN LEAD	DUAL	R-PDSO-G32	5.5 V	2.8 mm	10.7 mm	Not Qualified	4194304 bit	4.5 V		e0				20.6 mm	250 ns
TC534000CP	Toshiba	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words	5		8	IN-LINE			2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel		DUAL	R-PDIP-T32	5.5 V	4.8 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V						42 mm	120 ns
TC531001CF	Toshiba	MASK ROM	OTHER	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	131072 words	5	5	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-PDSO-G32	5.5 V	2.8 mm	10.7 mm	Not Qualified	1048576 bit	4.5 V		e0			.0002 Amp	20.6 mm	150 ns
TC538000AP	Toshiba	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words	5		8	IN-LINE			2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T32	5.5 V	4.8 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e0				42 mm	150 ns
TC531001AP	Toshiba	MASK ROM	OTHER	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			50 mA	131072 words	5	5	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel		128KX8	128K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32				Not Qualified	1048576 bit			e0			.00002 Amp		150 ns
TC534000F-20	Toshiba	MASK ROM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			40 mA	524288 words	5	5	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	85 Cel		512KX8	512K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32				Not Qualified	4194304 bit			e0			.00002 Amp		200 ns
TC531001CF-15	Toshiba	MASK ROM	OTHER	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words	5		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-PDSO-G32	5.5 V	2.8 mm	10.7 mm	Not Qualified	1048576 bit	4.5 V		e0				20.6 mm	150 ns
TC534000AF(TP1)	Toshiba	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-G32	5.5 V	2.8 mm	10.7 mm	Not Qualified	4194304 bit	4.5 V		e0				20.6 mm	150 ns
TC532000P	Toshiba	MASK ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			40 mA	262144 words	5	5	8	IN-LINE	DIP32,.9	MASK ROMs	2.54 mm	85 Cel		256KX8	256K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32				Not Qualified	2097152 bit			e0			.00002 Amp		200 ns
TC531001CP-12	Toshiba	MASK ROM	OTHER	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	5	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T32	5.5 V	4.8 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			.0002 Amp	42 mm	120 ns

MASK ROM

Mask ROM, or Read-Only Memory, is a type of non-volatile computer memory that is programmed during the manufacturing process. Mask ROM is designed to permanently store data and cannot be reprogrammed after it has been manufactured.

Mask ROM is created by a process known as photolithography. This process involves using a mask, or template, to expose specific areas of a silicon wafer to ultraviolet light. The areas that are exposed to the light are then etched away, leaving behind the patterns that make up the memory cells. Once the memory cells have been created, they are permanently programmed with the data that they will store.

Mask ROM is commonly used in devices that require permanent storage of data, such as game consoles, calculators, and other electronic devices. Because the data is permanently programmed during manufacturing, mask ROM provides a reliable and secure way to store critical data, such as system settings, firmware, and other important information.

One of the advantages of using mask ROM is that it is a cost-effective way to produce large quantities of memory. Because the data is programmed during the manufacturing process, the cost per unit is relatively low compared to other types of non-volatile memory, such as EEPROM or flash memory.