32 MASK ROM 457

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
KM23V8000DG-10	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words	3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		1MX8	1M	0 Cel		DUAL	R-PDSO-G32		3.6 V	3 mm	11.43 mm	Not Qualified	8388608 bit	3 V				20.47 mm	100 ns
K3N4U3000D-GC12	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	1048576 words	3	3	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	70 Cel		1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		3.3 V	3 mm	11.43 mm	Not Qualified	8388608 bit	2.7 V	TTL COMPATIBLE I/O	e0	.00003 Amp	20.47 mm	120 ns
KM23V8001B-25	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	3.3	3/3.3	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		3.6 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	2.7 V		e0	.03 Amp	41.91 mm	250 ns
KM23C2001A-10	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	5	5	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V		e0	.04 Amp	41.91 mm	100 ns
KM23V8001BG-30	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	3	3/3.3	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		3.3 V	3 mm	11.43 mm	Not Qualified	8388608 bit	2.7 V		e0	.03 Amp	20.47 mm	300 ns
KM23C4000-15	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	524288 words	5	5	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0	.0001 Amp	41.91 mm	150 ns
KM23C8000CG-20	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			60 mA	1048576 words	5	5	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	70 Cel		1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDSO-G32	3				Not Qualified	8388608 bit			e0	.00005 Amp		200 ns
K3N4C3000D-GC15	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	5	5	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	70 Cel		1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	8388608 bit	4.5 V	TTL COMPATIBLE I/O	e0	.00005 Amp	20.47 mm	150 ns
KM23C8005BG-15	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	1048576 words	5	5	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	8388608 bit	4.5 V		e0	.00005 Amp	20.47 mm	150 ns
KM23C1010J-20	Samsung	MASK ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	5	5	8	CHIP CARRIER	LDCC32,.5X.6	MASK ROMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	QUAD	R-PQCC-J32		5.5 V	3.55 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V		e0	.0001 Amp	13.97 mm	200 ns
KM23V8000B-20	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	3.3	3/3.3	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		3.6 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	2.7 V		e0	.00005 Amp	41.91 mm	200 ns
KM23C8000-15	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	5	5	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e0	.00005 Amp	41.91 mm	150 ns
KM23V4001BG-20	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	3.3	3/3.3	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		3.6 V	3 mm	11.43 mm	Not Qualified	4194304 bit	2.7 V		e0	.03 Amp	20.47 mm	200 ns
KM23C4000DETY	Samsung	MASK ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		512KX8	512K	-20 Cel		DUAL	R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	4194304 bit	4.5 V				18.4 mm	80 ns
KM23C4000AG-20	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	4194304 bit	4.5 V		e0	.00005 Amp	20.47 mm	200 ns
KM23C512J-15	Samsung	MASK ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND			40 mA	65536 words	5	5	8	CHIP CARRIER	LDCC32,.5X.6	MASK ROMs	1.27 mm	70 Cel		64KX8	64K	0 Cel	TIN LEAD	QUAD	R-PQCC-J32	3				Not Qualified	524288 bit			e0	.00004 Amp		150 ns
KM23C1011G-12	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	5	5	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V		e0	.04 Amp	20.47 mm	120 ns
KM23C8001AG-25	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	5	5	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	8388608 bit	4.5 V		e0	.05 Amp	20.47 mm	250 ns
KM23C2000G-15	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	5	5	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	2097152 bit	4.5 V		e0	.0001 Amp	20.47 mm	150 ns
KM23C8000AG-15	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	5	5	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	8388608 bit	4.5 V		e0	.00005 Amp	20.47 mm	150 ns
K3N3U3000D-AE95	Samsung	MASK ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	3	3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	MASK ROMs	.5 mm	85 Cel		512KX8	512K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G32		3.3 V	1.2 mm	8 mm	Not Qualified	4194304 bit	2.7 V	TTL COMPATIBLE I/O	e0	.00003 Amp	11.8 mm	95 ns
K3N3V3000D-AE85	Samsung	MASK ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	MASK ROMs	.5 mm	85 Cel		512KX8	512K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE I/O	e0	.00003 Amp	11.8 mm	85 ns
KM23C8000G-15	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	5	5	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	8388608 bit	4.5 V		e0	.00005 Amp	20.47 mm	150 ns
KM23C2000HG-10	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	5	5	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	2097152 bit	4.5 V		e0	.00005 Amp	20.47 mm	100 ns
KM23C8000B-12	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	1048576 words	5	5	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e0	.00005 Amp	41.91 mm	120 ns

MASK ROM

Mask ROM, or Read-Only Memory, is a type of non-volatile computer memory that is programmed during the manufacturing process. Mask ROM is designed to permanently store data and cannot be reprogrammed after it has been manufactured.

Mask ROM is created by a process known as photolithography. This process involves using a mask, or template, to expose specific areas of a silicon wafer to ultraviolet light. The areas that are exposed to the light are then etched away, leaving behind the patterns that make up the memory cells. Once the memory cells have been created, they are permanently programmed with the data that they will store.

Mask ROM is commonly used in devices that require permanent storage of data, such as game consoles, calculators, and other electronic devices. Because the data is permanently programmed during manufacturing, mask ROM provides a reliable and secure way to store critical data, such as system settings, firmware, and other important information.

One of the advantages of using mask ROM is that it is a cost-effective way to produce large quantities of memory. Because the data is programmed during the manufacturing process, the cost per unit is relatively low compared to other types of non-volatile memory, such as EEPROM or flash memory.