32 MASK ROM 457

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
KM23V4000DETY	Samsung	MASK ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	MASK ROMs	.5 mm	85 Cel		512KX8	512K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G32		3.3 V	1.2 mm	8 mm	Not Qualified	4194304 bit	2.7 V	CAN ALSO OPERATE AT 3V TO 3.6V SUPPLY	e0			.00003 Amp	18.4 mm	120 ns
K3N3C3000D-GC080	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K	0 Cel		DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	4194304 bit	4.5 V			30	225		20.47 mm	80 ns
KM23V8000C-20	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			30 mA	1048576 words	3.3	3.3	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel		1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T32	3				Not Qualified	8388608 bit			e0			.00005 Amp		200 ns
KM23C8001H-15	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	5	5	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e0			.05 Amp	41.91 mm	150 ns
K3N3U3000D-YE120	Samsung	MASK ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		512KX8	512K	-20 Cel		DUAL	R-PDSO-G32		3.3 V	1.2 mm	8 mm	Not Qualified	4194304 bit	2.7 V			30	240		18.4 mm	120 ns
KM23C4000D-10	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel		512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			.00005 Amp	41.91 mm	100 ns
K3N3U3000D-AE950	Samsung	MASK ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		512KX8	512K	-20 Cel		DUAL	R-PDSO-G32		3.3 V	1.2 mm	8 mm	Not Qualified	4194304 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		11.8 mm	95 ns
KM23C8001B-15	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	1048576 words	5	5	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e0			.06 Amp	41.91 mm	150 ns
KM23C8000C-15	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			60 mA	1048576 words	5	5	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel		1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T32	3				Not Qualified	8388608 bit			e0			.00005 Amp		150 ns
K3N3S3000D-YE25	Samsung	MASK ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	MASK ROMs	.5 mm	85 Cel		512KX8	512K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G32		2.7 V	1.2 mm	8 mm	Not Qualified	4194304 bit	2.3 V	TTL COMPATIBLE I/O	e0			.00003 Amp	18.4 mm	250 ns
K3N3V3000D-DC	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			25 mA	524288 words	3.3	3.3	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel		512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32					Not Qualified	4194304 bit			e0			.00003 Amp		100 ns
K3N3V3000D-YE10	Samsung	MASK ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	MASK ROMs	.5 mm	85 Cel		512KX8	512K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE I/O	e0			.00003 Amp	18.4 mm	100 ns
KM23C4001B-20	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	5	5	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			.06 Amp	41.91 mm	200 ns
KM23C4000DG-12	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	70 Cel		512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	4194304 bit	4.5 V		e0			.00005 Amp	20.47 mm	120 ns
KM23V4000DTY	Samsung	MASK ROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	MASK ROMs	.5 mm	70 Cel		512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		3.3 V	1.2 mm	8 mm	Not Qualified	4194304 bit	2.7 V	CAN ALSO OPERATE AT 3V TO 3.6V SUPPLY	e0			.00003 Amp	18.4 mm	120 ns
KM23C2000-25	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	5	5	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V		e0			.0001 Amp	41.91 mm	250 ns
KM23C8001H-12	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	5	5	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e0			.05 Amp	41.91 mm	120 ns
KM23C512G-15	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	5	5	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	524288 bit	4.5 V		e0			.0001 Amp	20.47 mm	150 ns
KM23C2000HG-12	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	5	5	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	2097152 bit	4.5 V		e0			.00005 Amp	20.47 mm	120 ns
KM23V4000DETG-85	Samsung	MASK ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	3.3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		512KX8	512K	-20 Cel		DUAL	R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	4194304 bit	3 V						11.8 mm	85 ns
KM23C256G-20	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	5	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	262144 bit	4.5 V		e0			.0001 Amp	20.47 mm	200 ns
KM23V4000C	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			25 mA	524288 words		3/3.3	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel		512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32					Not Qualified	4194304 bit			e0			.00003 Amp		150 ns
KM23C4000B-15	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	5	5	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			.00005 Amp	41.91 mm	150 ns
KM23C4001BG-10	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K	0 Cel		DUAL	R-PDSO-G32			2.4 mm	8.34 mm	Not Qualified	4194304 bit							19.9 mm	100 ns
KM23C8001BG-15	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	1048576 words	5	5	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	8388608 bit	4.5 V		e0			.06 Amp	20.47 mm	150 ns
KM23C4001AG-25	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	4194304 bit	4.5 V		e0			.05 Amp	20.47 mm	250 ns
KM23C4000A-25	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			.00005 Amp	41.91 mm	250 ns
KM23C4001B-10	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words	5		8	IN-LINE				70 Cel		512KX8	512K	0 Cel		DUAL	R-PDIP-T32					Not Qualified	4194304 bit								100 ns
KM23V4000DTG-85	Samsung	MASK ROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	3.3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel		512KX8	512K	0 Cel		DUAL	R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	4194304 bit	3 V						11.8 mm	85 ns
KM23C4000H-10	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	5	5	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			.00005 Amp	41.91 mm	100 ns
KM23C8000-20	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	5	5	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e0			.00005 Amp	41.91 mm	200 ns
KM23C1010G-15	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	5	5	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V		e0			.0001 Amp	20.47 mm	150 ns
K3N3C3000D-DC08	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel		512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	TTL COMPATIBLE I/O	e0			.00005 Amp	41.91 mm	80 ns
KM23C8000B-10	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	1048576 words	5	5	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e0			.00005 Amp	41.91 mm	100 ns
K3N4C3000D-GC12	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	5	5	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	70 Cel		1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	8388608 bit	4.5 V	TTL COMPATIBLE I/O	e0			.00005 Amp	20.47 mm	120 ns
KM23C8000AG-20	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	5	5	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	8388608 bit	4.5 V		e0			.00005 Amp	20.47 mm	200 ns
K3N3V3000D-GC10	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K	0 Cel		DUAL	R-PDSO-G32		3.6 V	3 mm	11.43 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE I/O					20.47 mm	100 ns
KM23C4000H-12	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	5	5	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			.00005 Amp	41.91 mm	120 ns
K3N3V3000D-AC85	Samsung	MASK ROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	MASK ROMs	.5 mm	70 Cel		512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE I/O	e0			.00003 Amp	11.8 mm	85 ns
KM23V4001B-30	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	3	3/3.3	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		3.3 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	2.7 V		e0			.03 Amp	41.91 mm	300 ns
KM23C8001A-15	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	5	5	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e0			.05 Amp	41.91 mm	150 ns
KM23C256G-12	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	5	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	262144 bit	4.5 V		e0			.0001 Amp	20.47 mm	120 ns
KM23C4001A-25	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			.05 Amp	41.91 mm	250 ns
KM23C8000-25	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	5	5	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e0			.00005 Amp	41.91 mm	250 ns
KM23C4001HG-12	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	4194304 bit	4.5 V		e0			.05 Amp	20.47 mm	120 ns
KM23C2001G-25	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	5	5	8	SMALL OUTLINE	SOP32,.56	MASK ROMs	1.27 mm	70 Cel		256KX8	256K	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	2097152 bit	4.5 V		e0			.05 Amp	20.47 mm	250 ns
K3N3C3000D-YE100	Samsung	MASK ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		512KX8	512K	-20 Cel		DUAL	R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	4194304 bit	4.5 V			30	240		18.4 mm	100 ns
KM23V4000D	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	3	3/3.3	8	IN-LINE	DIP32,.6	MASK ROMs	2.54 mm	70 Cel		512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		3.3 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	2.7 V	CAN ALSO OPERATE AT 3V TO 3.6V SUPPLY	e0			.00003 Amp	41.91 mm	120 ns

MASK ROM

Mask ROM, or Read-Only Memory, is a type of non-volatile computer memory that is programmed during the manufacturing process. Mask ROM is designed to permanently store data and cannot be reprogrammed after it has been manufactured.

Mask ROM is created by a process known as photolithography. This process involves using a mask, or template, to expose specific areas of a silicon wafer to ultraviolet light. The areas that are exposed to the light are then etched away, leaving behind the patterns that make up the memory cells. Once the memory cells have been created, they are permanently programmed with the data that they will store.

Mask ROM is commonly used in devices that require permanent storage of data, such as game consoles, calculators, and other electronic devices. Because the data is permanently programmed during manufacturing, mask ROM provides a reliable and secure way to store critical data, such as system settings, firmware, and other important information.

One of the advantages of using mask ROM is that it is a cost-effective way to produce large quantities of memory. Because the data is programmed during the manufacturing process, the cost per unit is relatively low compared to other types of non-volatile memory, such as EEPROM or flash memory.