40 MASK ROM 168

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Output Characteristics Organization No. of Words Code Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Length Maximum Access Time

M23C4000B1

STMicroelectronics

MASK ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

5

8

IN-LINE

16

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

DUAL

R-PDIP-T40

5.5 V

15.24 mm

Not Qualified

4194304 bit

4.5 V

AUTOMATIC POWER-DOWN

52.18 mm

120 ns

TC531024F-12(TP1)

Toshiba

MASK ROM

COMMERCIAL

40

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

65536 words

5

16

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

TIN LEAD

DUAL

R-PDSO-G40

5.25 V

2.8 mm

10.7 mm

Not Qualified

1048576 bit

4.75 V

e0

120 ns

TC534200CF

Toshiba

MASK ROM

COMMERCIAL

40

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE

16

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

DUAL

R-PDSO-G40

5.5 V

2.8 mm

10.7 mm

Not Qualified

4194304 bit

4.5 V

25.7 mm

120 ns

TC534200F(EL)

Toshiba

MASK ROM

COMMERCIAL

40

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE

16

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-PDSO-G40

5.5 V

2.8 mm

10.7 mm

Not Qualified

4194304 bit

4.5 V

e0

150 ns

TC531024F-15(EL)

Toshiba

MASK ROM

COMMERCIAL

40

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

65536 words

5

16

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

TIN LEAD

DUAL

R-PDSO-G40

5.5 V

2.8 mm

10.7 mm

Not Qualified

1048576 bit

4.5 V

e0

150 ns

TC531024P-12

Toshiba

MASK ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

65536 words

5

5

16

IN-LINE

DIP40,.6

MASK ROMs

2.54 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

TIN LEAD

DUAL

R-PDIP-T40

5.25 V

4.8 mm

15.24 mm

Not Qualified

1048576 bit

4.75 V

e0

.00002 Amp

50.7 mm

120 ns

TC531024F-15(TP2)

Toshiba

MASK ROM

COMMERCIAL

40

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

65536 words

5

16

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

TIN LEAD

DUAL

R-PDSO-G40

5.5 V

2.8 mm

10.7 mm

Not Qualified

1048576 bit

4.5 V

e0

150 ns

TC531024F-12(TP2)

Toshiba

MASK ROM

COMMERCIAL

40

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

65536 words

5

16

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

TIN LEAD

DUAL

R-PDSO-G40

5.25 V

2.8 mm

10.7 mm

Not Qualified

1048576 bit

4.75 V

e0

120 ns

TC531024F-15(TP1)

Toshiba

MASK ROM

COMMERCIAL

40

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

65536 words

5

16

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

TIN LEAD

DUAL

R-PDSO-G40

5.5 V

2.8 mm

10.7 mm

Not Qualified

1048576 bit

4.5 V

e0

150 ns

TC534200P-15

Toshiba

MASK ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

60 mA

262144 words

5

5

16

IN-LINE

DIP40,.6

8

MASK ROMs

2.54 mm

70 Cel

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T40

Not Qualified

4194304 bit

e0

.00002 Amp

150 ns

TMP8355P

Toshiba

MASK ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

180 mA

2048 words

8

IN-LINE

DIP40,.6

MASK ROMs

2.54 mm

70 Cel

2KX8

2K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T40

Not Qualified

16384 bit

e0

400 ns

TC534200F(TP1)

Toshiba

MASK ROM

COMMERCIAL

40

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE

16

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-PDSO-G40

5.5 V

2.8 mm

10.7 mm

Not Qualified

4194304 bit

4.5 V

e0

150 ns

TC534200F

Toshiba

MASK ROM

COMMERCIAL

40

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

524288 words

5

5

8

SMALL OUTLINE

SOP40,.5,30

16

MASK ROMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-PDSO-G40

5.5 V

2.8 mm

10.7 mm

Not Qualified

4194304 bit

4.5 V

e0

.00002 Amp

25.7 mm

150 ns

TC534200F(TP2)

Toshiba

MASK ROM

COMMERCIAL

40

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE

16

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-PDSO-G40

5.5 V

2.8 mm

10.7 mm

Not Qualified

4194304 bit

4.5 V

e0

150 ns

TC531024F-12(EL)

Toshiba

MASK ROM

COMMERCIAL

40

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

65536 words

5

16

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

TIN LEAD

DUAL

R-PDSO-G40

5.25 V

2.8 mm

10.7 mm

Not Qualified

1048576 bit

4.75 V

e0

120 ns

TC534200CP

Toshiba

MASK ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

5

8

IN-LINE

16

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

DUAL

R-PDIP-T40

5.5 V

4.8 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

50.7 mm

120 ns

TC531024P-15

Toshiba

MASK ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

45 mA

65536 words

5

5

16

IN-LINE

DIP40,.6

MASK ROMs

2.54 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

TIN LEAD

DUAL

R-PDIP-T40

5.5 V

4.8 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e0

.00002 Amp

50.7 mm

150 ns

TC531024F-12

Toshiba

MASK ROM

COMMERCIAL

40

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

65536 words

5

5

16

SMALL OUTLINE

SOP40,.5,30

MASK ROMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

TIN LEAD

DUAL

R-PDSO-G40

5.25 V

2.8 mm

10.7 mm

Not Qualified

1048576 bit

4.75 V

e0

.00002 Amp

25.7 mm

120 ns

TC53H1024P-85

Toshiba

MASK ROM

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

65536 words

5

16

IN-LINE

2.54 mm

3-STATE

64KX16

64K

TIN LEAD

DUAL

R-PDIP-T40

4.8 mm

15.24 mm

Not Qualified

1048576 bit

e0

50.7 mm

85 ns

TC534200F-15

Toshiba

MASK ROM

COMMERCIAL

40

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

60 mA

262144 words

5

5

16

SMALL OUTLINE

SOP40,.56

8

MASK ROMs

1.27 mm

70 Cel

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4194304 bit

e0

.00002 Amp

150 ns

TC531024F-15

Toshiba

MASK ROM

COMMERCIAL

40

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

65536 words

5

5

16

SMALL OUTLINE

SOP40,.5,30

MASK ROMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

TIN LEAD

DUAL

R-PDSO-G40

5.5 V

2.8 mm

10.7 mm

Not Qualified

1048576 bit

4.5 V

e0

.00002 Amp

25.7 mm

150 ns

TC53H1024AP-85

Toshiba

MASK ROM

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

60 mA

65536 words

5

5

16

IN-LINE

DIP40,.6

MASK ROMs

2.54 mm

64KX16

64K

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T40

Not Qualified

1048576 bit

e0

.0001 Amp

85 ns

TC534200P

Toshiba

MASK ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

60 mA

524288 words

5

5

8

IN-LINE

DIP40,.6

16

MASK ROMs

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-PDIP-T40

5.5 V

4.8 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

e0

.00002 Amp

50.7 mm

150 ns

HN62442BP-10

Renesas Electronics

MASK ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

16

IN-LINE

2.54 mm

70 Cel

128KX16

128K

0 Cel

DUAL

R-PDIP-T40

5.5 V

5.08 mm

15.24 mm

Not Qualified

2097152 bit

4.5 V

52.8 mm

100 ns

HN62412P-20

Renesas Electronics

MASK ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

262144 words

5

8

IN-LINE

16

2.54 mm

70 Cel

256KX8

256K

0 Cel

DUAL

R-PDIP-T40

5.5 V

5.08 mm

15.24 mm

Not Qualified

2097152 bit

4.5 V

52.8 mm

200 ns

HN62444P

Renesas Electronics

MASK ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

5

8

IN-LINE

16

2.54 mm

70 Cel

512KX8

512K

0 Cel

DUAL

R-PDIP-T40

5.5 V

5.08 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

52.8 mm

100 ns

HN62415P-15

Renesas Electronics

MASK ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

5

8

IN-LINE

16

2.54 mm

70 Cel

512KX8

512K

0 Cel

DUAL

R-PDIP-T40

5.5 V

5.08 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

52.8 mm

150 ns

HN62444BP-10

Renesas Electronics

MASK ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

262144 words

5

16

IN-LINE

2.54 mm

70 Cel

256KX16

256K

0 Cel

DUAL

R-PDIP-T40

5.25 V

5.08 mm

15.24 mm

Not Qualified

4194304 bit

4.75 V

52.8 mm

100 ns

HN62454NP-85

Renesas Electronics

MASK ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

5

8

IN-LINE

16

2.54 mm

70 Cel

512KX8

512K

0 Cel

DUAL

R-PDIP-T40

5.5 V

5.08 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

52.8 mm

85 ns

HN62415P-12

Renesas Electronics

MASK ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

5

8

IN-LINE

16

2.54 mm

70 Cel

512KX8

512K

0 Cel

DUAL

R-PDIP-T40

5.5 V

5.08 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

52.8 mm

120 ns

HN62454P-85

Renesas Electronics

MASK ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

5

8

IN-LINE

16

2.54 mm

70 Cel

512KX8

512K

0 Cel

DUAL

R-PDIP-T40

5.5 V

5.08 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

52.8 mm

85 ns

UPD23C2000AC-1

Renesas Electronics

MASK ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

65 mA

2097152 words

1

IN-LINE

DIP40,.6

MASK ROMs

2.54 mm

70 Cel

2MX1

2M

-10 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T40

Not Qualified

2097152 bit

e0

175 ns

HN62414FA-15

Renesas Electronics

MASK ROM

COMMERCIAL

40

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE

16

1.27 mm

70 Cel

512KX8

512K

0 Cel

DUAL

R-PDSO-G40

5.5 V

3.05 mm

10.7 mm

Not Qualified

4194304 bit

4.5 V

26 mm

150 ns

UPD23C2000C

Renesas Electronics

MASK ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

40 mA

2097152 words

1

IN-LINE

DIP40,.6

MASK ROMs

2.54 mm

70 Cel

2MX1

2M

-10 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T40

Not Qualified

2097152 bit

e0

250 ns

HN62415FA-15

Renesas Electronics

MASK ROM

COMMERCIAL

40

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE

16

1.27 mm

70 Cel

512KX8

512K

0 Cel

DUAL

R-PDSO-G40

5.5 V

3.05 mm

10.7 mm

Not Qualified

4194304 bit

4.5 V

26 mm

150 ns

HN62444BPN-12

Renesas Electronics

MASK ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

262144 words

5

16

IN-LINE

2.54 mm

70 Cel

256KX16

256K

0 Cel

DUAL

R-PDIP-T40

5.25 V

5.08 mm

15.24 mm

Not Qualified

4194304 bit

4.75 V

52.8 mm

120 ns

UPD23C1024EC

Renesas Electronics

MASK ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

40 mA

65536 words

5

5

16

IN-LINE

DIP40,.6

MASK ROMs

2.54 mm

70 Cel

64KX16

64K

-10 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T40

Not Qualified

1048576 bit

e0

.0001 Amp

200 ns

HN62V454FA-20

Renesas Electronics

MASK ROM

COMMERCIAL

40

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

3.3

8

SMALL OUTLINE

1.27 mm

70 Cel

512KX8

512K

0 Cel

DUAL

R-PDSO-G40

3.6 V

3 mm

10.7 mm

Not Qualified

4194304 bit

2.7 V

CONFIGURABLE AS 256K X 16

26.1 mm

200 ns

HN62454NFA-85

Renesas Electronics

MASK ROM

COMMERCIAL

40

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE

16

1.27 mm

70 Cel

512KX8

512K

0 Cel

DUAL

R-PDSO-G40

5.5 V

2.8 mm

10.7 mm

Not Qualified

4194304 bit

4.5 V

26 mm

85 ns

HN62434P-15

Renesas Electronics

MASK ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

5

8

IN-LINE

2.54 mm

70 Cel

512KX8

512K

0 Cel

DUAL

R-PDIP-T40

5.5 V

5.08 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

52.8 mm

150 ns

HN62454FA-85

Renesas Electronics

MASK ROM

COMMERCIAL

40

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE

16

1.27 mm

70 Cel

512KX8

512K

0 Cel

DUAL

R-PDSO-G40

5.5 V

2.8 mm

10.7 mm

Not Qualified

4194304 bit

4.5 V

26 mm

85 ns

HN62434FA-17

Renesas Electronics

MASK ROM

COMMERCIAL

40

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE

16

1.27 mm

70 Cel

512KX8

512K

0 Cel

DUAL

R-PDSO-G40

5.5 V

3.05 mm

10.7 mm

Not Qualified

4194304 bit

4.5 V

26 mm

170 ns

HN62434FA-12

Renesas Electronics

MASK ROM

COMMERCIAL

40

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

512KX8

512K

0 Cel

DUAL

R-PDSO-G40

5.5 V

2.8 mm

10.7 mm

Not Qualified

4194304 bit

4.5 V

26 mm

120 ns

HN62415FA-12

Renesas Electronics

MASK ROM

COMMERCIAL

40

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE

16

1.27 mm

70 Cel

512KX8

512K

0 Cel

DUAL

R-PDSO-G40

5.5 V

3.05 mm

10.7 mm

Not Qualified

4194304 bit

4.5 V

26 mm

120 ns

HN62444BP

Renesas Electronics

MASK ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

262144 words

5

16

IN-LINE

2.54 mm

70 Cel

256KX16

256K

0 Cel

DUAL

R-PDIP-T40

5.25 V

5.08 mm

15.24 mm

Not Qualified

4194304 bit

4.75 V

52.8 mm

100 ns

HN62434FA-20

Renesas Electronics

MASK ROM

COMMERCIAL

40

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE

16

1.27 mm

70 Cel

512KX8

512K

0 Cel

DUAL

R-PDSO-G40

5.5 V

3.05 mm

10.7 mm

Not Qualified

4194304 bit

4.5 V

26 mm

200 ns

HN62442BP

Renesas Electronics

MASK ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

16

IN-LINE

2.54 mm

70 Cel

128KX16

128K

0 Cel

DUAL

R-PDIP-T40

5.5 V

5.08 mm

15.24 mm

Not Qualified

2097152 bit

4.5 V

52.8 mm

100 ns

UPD23C4001EJGZ-XXX-LJH

Renesas Electronics

MASK ROM

COMMERCIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

35 mA

524288 words

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP40,.8,20

MASK ROMs

.5 mm

70 Cel

512KX8

512K

-10 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4194304 bit

e0

.0001 Amp

380 ns

MASK ROM

Mask ROM, or Read-Only Memory, is a type of non-volatile computer memory that is programmed during the manufacturing process. Mask ROM is designed to permanently store data and cannot be reprogrammed after it has been manufactured.

Mask ROM is created by a process known as photolithography. This process involves using a mask, or template, to expose specific areas of a silicon wafer to ultraviolet light. The areas that are exposed to the light are then etched away, leaving behind the patterns that make up the memory cells. Once the memory cells have been created, they are permanently programmed with the data that they will store.

Mask ROM is commonly used in devices that require permanent storage of data, such as game consoles, calculators, and other electronic devices. Because the data is permanently programmed during manufacturing, mask ROM provides a reliable and secure way to store critical data, such as system settings, firmware, and other important information.

One of the advantages of using mask ROM is that it is a cost-effective way to produce large quantities of memory. Because the data is programmed during the manufacturing process, the cost per unit is relatively low compared to other types of non-volatile memory, such as EEPROM or flash memory.