Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | Terminal Finish | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics |
MASK ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
IN-LINE |
16 |
2.54 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDIP-T40 |
5.5 V |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
52.18 mm |
120 ns |
|||||||||||||||
Toshiba |
MASK ROM |
COMMERCIAL |
40 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
65536 words |
5 |
16 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G40 |
5.25 V |
2.8 mm |
10.7 mm |
Not Qualified |
1048576 bit |
4.75 V |
e0 |
120 ns |
|||||||||||||||
Toshiba |
MASK ROM |
COMMERCIAL |
40 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE |
16 |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G40 |
5.5 V |
2.8 mm |
10.7 mm |
Not Qualified |
4194304 bit |
4.5 V |
25.7 mm |
120 ns |
|||||||||||||||
Toshiba |
MASK ROM |
COMMERCIAL |
40 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE |
16 |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G40 |
5.5 V |
2.8 mm |
10.7 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
150 ns |
||||||||||||||
Toshiba |
MASK ROM |
COMMERCIAL |
40 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
65536 words |
5 |
16 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G40 |
5.5 V |
2.8 mm |
10.7 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
150 ns |
|||||||||||||||
Toshiba |
MASK ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
65536 words |
5 |
5 |
16 |
IN-LINE |
DIP40,.6 |
MASK ROMs |
2.54 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T40 |
5.25 V |
4.8 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.75 V |
e0 |
.00002 Amp |
50.7 mm |
120 ns |
|||||||||
Toshiba |
MASK ROM |
COMMERCIAL |
40 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
65536 words |
5 |
16 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G40 |
5.5 V |
2.8 mm |
10.7 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
150 ns |
|||||||||||||||
Toshiba |
MASK ROM |
COMMERCIAL |
40 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
65536 words |
5 |
16 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G40 |
5.25 V |
2.8 mm |
10.7 mm |
Not Qualified |
1048576 bit |
4.75 V |
e0 |
120 ns |
|||||||||||||||
Toshiba |
MASK ROM |
COMMERCIAL |
40 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
65536 words |
5 |
16 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G40 |
5.5 V |
2.8 mm |
10.7 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
150 ns |
|||||||||||||||
Toshiba |
MASK ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
60 mA |
262144 words |
5 |
5 |
16 |
IN-LINE |
DIP40,.6 |
8 |
MASK ROMs |
2.54 mm |
70 Cel |
256KX16 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T40 |
Not Qualified |
4194304 bit |
e0 |
.00002 Amp |
150 ns |
|||||||||||||||||
Toshiba |
MASK ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
180 mA |
2048 words |
8 |
IN-LINE |
DIP40,.6 |
MASK ROMs |
2.54 mm |
70 Cel |
2KX8 |
2K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T40 |
Not Qualified |
16384 bit |
e0 |
400 ns |
|||||||||||||||||||||
Toshiba |
MASK ROM |
COMMERCIAL |
40 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE |
16 |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G40 |
5.5 V |
2.8 mm |
10.7 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
150 ns |
||||||||||||||
Toshiba |
MASK ROM |
COMMERCIAL |
40 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
60 mA |
524288 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOP40,.5,30 |
16 |
MASK ROMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G40 |
5.5 V |
2.8 mm |
10.7 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
.00002 Amp |
25.7 mm |
150 ns |
||||||||
Toshiba |
MASK ROM |
COMMERCIAL |
40 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE |
16 |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G40 |
5.5 V |
2.8 mm |
10.7 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
150 ns |
||||||||||||||
Toshiba |
MASK ROM |
COMMERCIAL |
40 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
65536 words |
5 |
16 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G40 |
5.25 V |
2.8 mm |
10.7 mm |
Not Qualified |
1048576 bit |
4.75 V |
e0 |
120 ns |
|||||||||||||||
Toshiba |
MASK ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
IN-LINE |
16 |
2.54 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDIP-T40 |
5.5 V |
4.8 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
50.7 mm |
120 ns |
|||||||||||||||
Toshiba |
MASK ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
45 mA |
65536 words |
5 |
5 |
16 |
IN-LINE |
DIP40,.6 |
MASK ROMs |
2.54 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T40 |
5.5 V |
4.8 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.00002 Amp |
50.7 mm |
150 ns |
|||||||||
Toshiba |
MASK ROM |
COMMERCIAL |
40 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
65536 words |
5 |
5 |
16 |
SMALL OUTLINE |
SOP40,.5,30 |
MASK ROMs |
1.27 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G40 |
5.25 V |
2.8 mm |
10.7 mm |
Not Qualified |
1048576 bit |
4.75 V |
e0 |
.00002 Amp |
25.7 mm |
120 ns |
|||||||||
Toshiba |
MASK ROM |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
65536 words |
5 |
16 |
IN-LINE |
2.54 mm |
3-STATE |
64KX16 |
64K |
TIN LEAD |
DUAL |
R-PDIP-T40 |
4.8 mm |
15.24 mm |
Not Qualified |
1048576 bit |
e0 |
50.7 mm |
85 ns |
|||||||||||||||||||
Toshiba |
MASK ROM |
COMMERCIAL |
40 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
60 mA |
262144 words |
5 |
5 |
16 |
SMALL OUTLINE |
SOP40,.56 |
8 |
MASK ROMs |
1.27 mm |
70 Cel |
256KX16 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G40 |
Not Qualified |
4194304 bit |
e0 |
.00002 Amp |
150 ns |
|||||||||||||||||
Toshiba |
MASK ROM |
COMMERCIAL |
40 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
65536 words |
5 |
5 |
16 |
SMALL OUTLINE |
SOP40,.5,30 |
MASK ROMs |
1.27 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G40 |
5.5 V |
2.8 mm |
10.7 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.00002 Amp |
25.7 mm |
150 ns |
|||||||||
Toshiba |
MASK ROM |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
60 mA |
65536 words |
5 |
5 |
16 |
IN-LINE |
DIP40,.6 |
MASK ROMs |
2.54 mm |
64KX16 |
64K |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T40 |
Not Qualified |
1048576 bit |
e0 |
.0001 Amp |
85 ns |
|||||||||||||||||||||
Toshiba |
MASK ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
60 mA |
524288 words |
5 |
5 |
8 |
IN-LINE |
DIP40,.6 |
16 |
MASK ROMs |
2.54 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T40 |
5.5 V |
4.8 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
.00002 Amp |
50.7 mm |
150 ns |
||||||||
Renesas Electronics |
MASK ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
16 |
IN-LINE |
2.54 mm |
70 Cel |
128KX16 |
128K |
0 Cel |
DUAL |
R-PDIP-T40 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
2097152 bit |
4.5 V |
52.8 mm |
100 ns |
|||||||||||||||||
Renesas Electronics |
MASK ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
262144 words |
5 |
8 |
IN-LINE |
16 |
2.54 mm |
70 Cel |
256KX8 |
256K |
0 Cel |
DUAL |
R-PDIP-T40 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
2097152 bit |
4.5 V |
52.8 mm |
200 ns |
||||||||||||||||
Renesas Electronics |
MASK ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
IN-LINE |
16 |
2.54 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDIP-T40 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
52.8 mm |
100 ns |
||||||||||||||||
Renesas Electronics |
MASK ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
IN-LINE |
16 |
2.54 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDIP-T40 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
52.8 mm |
150 ns |
||||||||||||||||
Renesas Electronics |
MASK ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
262144 words |
5 |
16 |
IN-LINE |
2.54 mm |
70 Cel |
256KX16 |
256K |
0 Cel |
DUAL |
R-PDIP-T40 |
5.25 V |
5.08 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.75 V |
52.8 mm |
100 ns |
|||||||||||||||||
Renesas Electronics |
MASK ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
IN-LINE |
16 |
2.54 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDIP-T40 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
52.8 mm |
85 ns |
||||||||||||||||
Renesas Electronics |
MASK ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
IN-LINE |
16 |
2.54 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDIP-T40 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
52.8 mm |
120 ns |
||||||||||||||||
Renesas Electronics |
MASK ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
IN-LINE |
16 |
2.54 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDIP-T40 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
52.8 mm |
85 ns |
||||||||||||||||
Renesas Electronics |
MASK ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
65 mA |
2097152 words |
1 |
IN-LINE |
DIP40,.6 |
MASK ROMs |
2.54 mm |
70 Cel |
2MX1 |
2M |
-10 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T40 |
Not Qualified |
2097152 bit |
e0 |
175 ns |
|||||||||||||||||||||
Renesas Electronics |
MASK ROM |
COMMERCIAL |
40 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE |
16 |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G40 |
5.5 V |
3.05 mm |
10.7 mm |
Not Qualified |
4194304 bit |
4.5 V |
26 mm |
150 ns |
||||||||||||||||
Renesas Electronics |
MASK ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
40 mA |
2097152 words |
1 |
IN-LINE |
DIP40,.6 |
MASK ROMs |
2.54 mm |
70 Cel |
2MX1 |
2M |
-10 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T40 |
Not Qualified |
2097152 bit |
e0 |
250 ns |
|||||||||||||||||||||
Renesas Electronics |
MASK ROM |
COMMERCIAL |
40 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE |
16 |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G40 |
5.5 V |
3.05 mm |
10.7 mm |
Not Qualified |
4194304 bit |
4.5 V |
26 mm |
150 ns |
||||||||||||||||
Renesas Electronics |
MASK ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
262144 words |
5 |
16 |
IN-LINE |
2.54 mm |
70 Cel |
256KX16 |
256K |
0 Cel |
DUAL |
R-PDIP-T40 |
5.25 V |
5.08 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.75 V |
52.8 mm |
120 ns |
|||||||||||||||||
Renesas Electronics |
MASK ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
40 mA |
65536 words |
5 |
5 |
16 |
IN-LINE |
DIP40,.6 |
MASK ROMs |
2.54 mm |
70 Cel |
64KX16 |
64K |
-10 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T40 |
Not Qualified |
1048576 bit |
e0 |
.0001 Amp |
200 ns |
||||||||||||||||||
Renesas Electronics |
MASK ROM |
COMMERCIAL |
40 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
3.3 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G40 |
3.6 V |
3 mm |
10.7 mm |
Not Qualified |
4194304 bit |
2.7 V |
CONFIGURABLE AS 256K X 16 |
26.1 mm |
200 ns |
||||||||||||||||
Renesas Electronics |
MASK ROM |
COMMERCIAL |
40 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE |
16 |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G40 |
5.5 V |
2.8 mm |
10.7 mm |
Not Qualified |
4194304 bit |
4.5 V |
26 mm |
85 ns |
||||||||||||||||
Renesas Electronics |
MASK ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
IN-LINE |
2.54 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDIP-T40 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
52.8 mm |
150 ns |
|||||||||||||||||
Renesas Electronics |
MASK ROM |
COMMERCIAL |
40 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE |
16 |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G40 |
5.5 V |
2.8 mm |
10.7 mm |
Not Qualified |
4194304 bit |
4.5 V |
26 mm |
85 ns |
||||||||||||||||
Renesas Electronics |
MASK ROM |
COMMERCIAL |
40 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE |
16 |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G40 |
5.5 V |
3.05 mm |
10.7 mm |
Not Qualified |
4194304 bit |
4.5 V |
26 mm |
170 ns |
||||||||||||||||
Renesas Electronics |
MASK ROM |
COMMERCIAL |
40 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G40 |
5.5 V |
2.8 mm |
10.7 mm |
Not Qualified |
4194304 bit |
4.5 V |
26 mm |
120 ns |
|||||||||||||||||
Renesas Electronics |
MASK ROM |
COMMERCIAL |
40 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE |
16 |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G40 |
5.5 V |
3.05 mm |
10.7 mm |
Not Qualified |
4194304 bit |
4.5 V |
26 mm |
120 ns |
||||||||||||||||
Renesas Electronics |
MASK ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
262144 words |
5 |
16 |
IN-LINE |
2.54 mm |
70 Cel |
256KX16 |
256K |
0 Cel |
DUAL |
R-PDIP-T40 |
5.25 V |
5.08 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.75 V |
52.8 mm |
100 ns |
|||||||||||||||||
Renesas Electronics |
MASK ROM |
COMMERCIAL |
40 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE |
16 |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G40 |
5.5 V |
3.05 mm |
10.7 mm |
Not Qualified |
4194304 bit |
4.5 V |
26 mm |
200 ns |
||||||||||||||||
Renesas Electronics |
MASK ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
16 |
IN-LINE |
2.54 mm |
70 Cel |
128KX16 |
128K |
0 Cel |
DUAL |
R-PDIP-T40 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
2097152 bit |
4.5 V |
52.8 mm |
100 ns |
|||||||||||||||||
Renesas Electronics |
MASK ROM |
COMMERCIAL |
40 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
35 mA |
524288 words |
3/5 |
8 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP40,.8,20 |
MASK ROMs |
.5 mm |
70 Cel |
512KX8 |
512K |
-10 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G40 |
Not Qualified |
4194304 bit |
e0 |
.0001 Amp |
380 ns |
Mask ROM, or Read-Only Memory, is a type of non-volatile computer memory that is programmed during the manufacturing process. Mask ROM is designed to permanently store data and cannot be reprogrammed after it has been manufactured.
Mask ROM is created by a process known as photolithography. This process involves using a mask, or template, to expose specific areas of a silicon wafer to ultraviolet light. The areas that are exposed to the light are then etched away, leaving behind the patterns that make up the memory cells. Once the memory cells have been created, they are permanently programmed with the data that they will store.
Mask ROM is commonly used in devices that require permanent storage of data, such as game consoles, calculators, and other electronic devices. Because the data is permanently programmed during manufacturing, mask ROM provides a reliable and secure way to store critical data, such as system settings, firmware, and other important information.
One of the advantages of using mask ROM is that it is a cost-effective way to produce large quantities of memory. Because the data is programmed during the manufacturing process, the cost per unit is relatively low compared to other types of non-volatile memory, such as EEPROM or flash memory.