40 MASK ROM 168

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
HN62414P-17	Renesas Electronics	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words	5		8	IN-LINE		16		2.54 mm	70 Cel		512KX8	512K	0 Cel		DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V						52.8 mm	170 ns
HN62V454P-20	Renesas Electronics	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words	3.3		8	IN-LINE				2.54 mm	70 Cel		512KX8	512K	0 Cel		DUAL	R-PDIP-T40		3.6 V	5.06 mm	15.24 mm	Not Qualified	4194304 bit	2.7 V	CONFIGURABLE AS 256K X 16					52.8 mm	200 ns
HN62442BFA-10	Renesas Electronics	MASK ROM	COMMERCIAL	40	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words	5		16	SMALL OUTLINE				1.27 mm	70 Cel		128KX16	128K	0 Cel		DUAL	R-PDSO-G40		5.5 V	3.05 mm	10.7 mm	Not Qualified	2097152 bit	4.5 V						26 mm	100 ns
HN62412P	Renesas Electronics	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words	5		8	IN-LINE		16		2.54 mm	70 Cel		256KX8	256K	0 Cel		DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V						52.8 mm	200 ns
HN62444BNP-12	Renesas Electronics	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words	5		16	IN-LINE				2.54 mm	70 Cel		256KX16	256K	0 Cel		DUAL	R-PDIP-T40		5.25 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V						52.8 mm	120 ns
HN62414P-15	Renesas Electronics	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words	5		8	IN-LINE		16		2.54 mm	70 Cel		512KX8	512K	0 Cel		DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V						52.8 mm	150 ns
HN62434FA-15	Renesas Electronics	MASK ROM	COMMERCIAL	40	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE				1.27 mm	70 Cel		512KX8	512K	0 Cel		DUAL	R-PDSO-G40		5.5 V	2.8 mm	10.7 mm	Not Qualified	4194304 bit	4.5 V						26 mm	150 ns
HN62415P-20	Renesas Electronics	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words	5		8	IN-LINE		16		2.54 mm	70 Cel		512KX8	512K	0 Cel		DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V						52.8 mm	200 ns
HN62414P-20	Renesas Electronics	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words	5		8	IN-LINE		16		2.54 mm	70 Cel		512KX8	512K	0 Cel		DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V						52.8 mm	200 ns
HN62434P-12	Renesas Electronics	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words	5		8	IN-LINE				2.54 mm	70 Cel		512KX8	512K	0 Cel		DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V						52.8 mm	120 ns
HN62434P-17	Renesas Electronics	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words	5		8	IN-LINE		16		2.54 mm	70 Cel		512KX8	512K	0 Cel		DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V						52.8 mm	170 ns
HN62422P-15	Renesas Electronics	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words	5		8	IN-LINE		16		2.54 mm	70 Cel		256KX8	256K	0 Cel		DUAL	R-PDIP-T40		5.25 V	5.08 mm	15.24 mm	Not Qualified	2097152 bit	4.75 V						52.8 mm	150 ns
HN62444P-10	Renesas Electronics	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words	5		8	IN-LINE		16		2.54 mm	70 Cel		512KX8	512K	0 Cel		DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V						52.8 mm	100 ns
HN62414FA-17	Renesas Electronics	MASK ROM	COMMERCIAL	40	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE		16		1.27 mm	70 Cel		512KX8	512K	0 Cel		DUAL	R-PDSO-G40		5.5 V	3.05 mm	10.7 mm	Not Qualified	4194304 bit	4.5 V						26 mm	170 ns
HN62414FA-20	Renesas Electronics	MASK ROM	COMMERCIAL	40	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE		16		1.27 mm	70 Cel		512KX8	512K	0 Cel		DUAL	R-PDSO-G40		5.5 V	3.05 mm	10.7 mm	Not Qualified	4194304 bit	4.5 V						26 mm	200 ns
UPD23C4000AC	Renesas Electronics	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			60 mA	262144 words	5	5	16	IN-LINE	DIP40,.6	8	MASK ROMs	2.54 mm	70 Cel		256KX16	256K	-10 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T40					Not Qualified	4194304 bit			e0			.0001 Amp		200 ns
UPD23C4000C	Renesas Electronics	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			40 mA	262144 words	5	5	16	IN-LINE	DIP40,.6	8	MASK ROMs	2.54 mm	70 Cel		256KX16	256K	-10 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T40					Not Qualified	4194304 bit			e0			.00001 Amp		250 ns
UPD23C4001EJGZ-XXX-LKH	Renesas Electronics	MASK ROM	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			35 mA	524288 words		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		MASK ROMs	.5 mm	70 Cel		512KX8	512K	-10 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40					Not Qualified	4194304 bit			e0			.0001 Amp		380 ns
HN62415FA-20	Renesas Electronics	MASK ROM	COMMERCIAL	40	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE		16		1.27 mm	70 Cel		512KX8	512K	0 Cel		DUAL	R-PDSO-G40		5.5 V	3.05 mm	10.7 mm	Not Qualified	4194304 bit	4.5 V						26 mm	200 ns
HN62422P	Renesas Electronics	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words	5		8	IN-LINE		16		2.54 mm	70 Cel		256KX8	256K	0 Cel		DUAL	R-PDIP-T40		5.25 V	5.08 mm	15.24 mm	Not Qualified	2097152 bit	4.75 V						52.8 mm	150 ns
HN62434P-20	Renesas Electronics	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words	5		8	IN-LINE		16		2.54 mm	70 Cel		512KX8	512K	0 Cel		DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V						52.8 mm	200 ns
UPD23C2000AC	Renesas Electronics	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			65 mA	2097152 words			1	IN-LINE	DIP40,.6		MASK ROMs	2.54 mm	70 Cel		2MX1	2M	-10 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T40					Not Qualified	2097152 bit			e0					200 ns
KM23C2100A-15	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	5	5	8	IN-LINE	DIP40,.6	16	MASK ROMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V		e0			.00005 Amp	52.43 mm	150 ns
KM23C2100H-12	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	5	5	8	IN-LINE	DIP40,.6	16	MASK ROMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V		e0			.00005 Amp	52.43 mm	120 ns
KM23V4200D-10	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	262144 words	3.3	3.3	16	IN-LINE	DIP40,.6		MASK ROMs	2.54 mm	70 Cel		256KX16	256K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40		3.6 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE I/O	e0			.00003 Amp	52.42 mm	100 ns
KM23V4200D	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			25 mA	262144 words		3/3.3	16	IN-LINE	DIP40,.6		MASK ROMs	2.54 mm	70 Cel		256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T40					Not Qualified	4194304 bit			e0			.00003 Amp		120 ns
K3N3V1000D-GC10	Samsung	MASK ROM	COMMERCIAL	40	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	262144 words	3.3	3.3	16	SMALL OUTLINE	SOP40,.56	8	MASK ROMs	1.27 mm	70 Cel		256KX16	256K	0 Cel	TIN LEAD	DUAL	R-PDSO-G40		3.6 V	2.8 mm	10.67 mm	Not Qualified	4194304 bit	3 V	ALL INPUTS AND OUTPUTS TTL COMPATIBLE	e0			.00003 Amp	25.65 mm	100 ns
KM23C4100B-12	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	5	5	8	IN-LINE	DIP40,.6	16	MASK ROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			.00005 Amp	52.43 mm	120 ns
KM23C4100BG-12	Samsung	MASK ROM	COMMERCIAL	40	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	5	5	8	SMALL OUTLINE	SOP40,.56	16	MASK ROMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-G40		5.5 V	2.8 mm	10.67 mm	Not Qualified	4194304 bit	4.5 V		e0			.00005 Amp	26.2 mm	120 ns
KM23V4100B-25	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	3.3	3/3.3	8	IN-LINE	DIP40,.6	16	MASK ROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40		3.6 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	2.7 V		e0			.00005 Amp	52.43 mm	250 ns
KM23V4100DG	Samsung	MASK ROM	COMMERCIAL	40	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	3	3/3.3	8	SMALL OUTLINE	SOP40,.56	8	MASK ROMs	1.27 mm	70 Cel		512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-G40		3.3 V	2.8 mm	10.67 mm	Not Qualified	4194304 bit	2.7 V	USER CONFIGURABLE AS 256K X 16; CAN ALSO OPERATE AT 3V TO 3.6V SUPPLY	e0			.00003 Amp	25.65 mm	120 ns
KM23C4200D-12	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	5	5	16	IN-LINE	DIP40,.6		MASK ROMs	2.54 mm	70 Cel		256KX16	256K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	TTL COMPATIBLE I/O	e0			.00005 Amp	52.42 mm	120 ns
KM23V4100DG-12	Samsung	MASK ROM	COMMERCIAL	40	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	3	3	16	SMALL OUTLINE	SOP40,.56	8	MASK ROMs	1.27 mm	70 Cel		256KX16	256K	0 Cel	TIN LEAD	DUAL	R-PDSO-G40		3.3 V	2.8 mm	10.67 mm	Not Qualified	4194304 bit	2.7 V	CONFIGURABLE AS 256K X 16	e0			.00003 Amp	25.65 mm	120 ns
KM23V4100CG	Samsung	MASK ROM	COMMERCIAL	40	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			25 mA	262144 words		3/3.3	16	SMALL OUTLINE	SOP40,.56	8	MASK ROMs	1.27 mm	70 Cel		256KX16	256K	0 Cel	TIN LEAD	DUAL	R-PDSO-G40	3				Not Qualified	4194304 bit			e0			.00003 Amp		150 ns
KM23C4200C-15	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			60 mA	262144 words	5	5	16	IN-LINE	DIP40,.6	8	MASK ROMs	2.54 mm	70 Cel		256KX16	256K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40	3				Not Qualified	4194304 bit			e0			.00005 Amp		150 ns
K3N3V1000D-DC100	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words	3.3		16	IN-LINE		8		2.54 mm	70 Cel		256KX16	256K	0 Cel		DUAL	R-PDIP-T40		3.6 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		52.43 mm	100 ns
K3N3C1000D-DC080	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words	5		16	IN-LINE		8		2.54 mm	70 Cel		256KX16	256K	0 Cel		DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		52.43 mm	80 ns
KM23C4200A-20	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	8	IN-LINE	DIP40,.6	16	MASK ROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			.00005 Amp	52.43 mm	200 ns
KM23C4200D-10	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	5	5	16	IN-LINE	DIP40,.6		MASK ROMs	2.54 mm	70 Cel		256KX16	256K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	TTL COMPATIBLE I/O	e0			.00005 Amp	52.42 mm	100 ns
K3N3C1000D-GC120	Samsung	MASK ROM	COMMERCIAL	40	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words	5		16	SMALL OUTLINE		8		1.27 mm	70 Cel		256KX16	256K	0 Cel		DUAL	R-PDSO-G40		5.5 V	2.8 mm	10.67 mm	Not Qualified	4194304 bit	4.5 V			30	225		25.65 mm	120 ns
KM23C4100BG-20	Samsung	MASK ROM	COMMERCIAL	40	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	5	5	8	SMALL OUTLINE	SOP40,.56	16	MASK ROMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-G40		5.5 V	2.8 mm	10.67 mm	Not Qualified	4194304 bit	4.5 V		e0			.00005 Amp	26.2 mm	200 ns
KM23C2100-20	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	5	5	8	IN-LINE	DIP40,.6	8	MASK ROMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V	CAN ALSO BE CONFIGURABLE AS 128 X 16	e0			.0001 Amp	52.43 mm	200 ns
KM23C4100C-10	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			60 mA	262144 words	5	5	16	IN-LINE	DIP40,.6	8	MASK ROMs	2.54 mm	70 Cel		256KX16	256K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40	3				Not Qualified	4194304 bit			e0			.00005 Amp		100 ns
K3N3U1000D-DC120	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words	3		16	IN-LINE		8		2.54 mm	70 Cel		256KX16	256K	0 Cel		DUAL	R-PDIP-T40		3.3 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		52.43 mm	120 ns
K3N3C1000D-GC12	Samsung	MASK ROM	COMMERCIAL	40	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	5	5	16	SMALL OUTLINE	SOP40,.56	8	MASK ROMs	1.27 mm	70 Cel		256KX16	256K	0 Cel	TIN LEAD	DUAL	R-PDSO-G40		5.5 V	2.8 mm	10.67 mm	Not Qualified	4194304 bit	4.5 V	ALL INPUTS AND OUTPUTS TTL COMPATIBLE	e0			.00005 Amp	25.65 mm	120 ns
KM23C2100A-12	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	5	5	8	IN-LINE	DIP40,.6	16	MASK ROMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V		e0			.00005 Amp	52.43 mm	120 ns
KM23C4100D-10	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	5	5	16	IN-LINE	DIP40,.6	8	MASK ROMs	2.54 mm	70 Cel		256KX16	256K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	CONFIGURABLE AS 256K X 16	e0			.00005 Amp	52.42 mm	100 ns
KM23V4100DG-10	Samsung	MASK ROM	COMMERCIAL	40	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	262144 words	3.3	3.3	16	SMALL OUTLINE	SOP40,.56	8	MASK ROMs	1.27 mm	70 Cel		256KX16	256K	0 Cel	TIN LEAD	DUAL	R-PDSO-G40		3.6 V	2.8 mm	10.67 mm	Not Qualified	4194304 bit	3 V	CONFIGURABLE AS 256K X 16	e0			.00003 Amp	25.65 mm	100 ns

MASK ROM

Mask ROM, or Read-Only Memory, is a type of non-volatile computer memory that is programmed during the manufacturing process. Mask ROM is designed to permanently store data and cannot be reprogrammed after it has been manufactured.

Mask ROM is created by a process known as photolithography. This process involves using a mask, or template, to expose specific areas of a silicon wafer to ultraviolet light. The areas that are exposed to the light are then etched away, leaving behind the patterns that make up the memory cells. Once the memory cells have been created, they are permanently programmed with the data that they will store.

Mask ROM is commonly used in devices that require permanent storage of data, such as game consoles, calculators, and other electronic devices. Because the data is permanently programmed during manufacturing, mask ROM provides a reliable and secure way to store critical data, such as system settings, firmware, and other important information.

One of the advantages of using mask ROM is that it is a cost-effective way to produce large quantities of memory. Because the data is programmed during the manufacturing process, the cost per unit is relatively low compared to other types of non-volatile memory, such as EEPROM or flash memory.