DIP MASK ROM 841

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
KM23V8100B-15	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	3.3	3/3.3	8	IN-LINE	DIP42,.6	16	MASK ROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		3.6 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	2.7 V		e0			.00005 Amp	52.43 mm	150 ns
KM23C16100-15	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	2097152 words	5	5	8	IN-LINE	DIP42,.6	16	MASK ROMs	2.54 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V		e0			.0001 Amp	52.43 mm	150 ns
KM2364PI-30	Samsung	MASK ROM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE			60 mA	8192 words	5	5	8	IN-LINE	DIP24,.6		MASK ROMs	2.54 mm	85 Cel		8KX8	8K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T24	3				Not Qualified	65536 bit			e0					300 ns
KM23C4100C-12	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			60 mA	262144 words	5	5	16	IN-LINE	DIP40,.6	8	MASK ROMs	2.54 mm	70 Cel		256KX16	256K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40	3				Not Qualified	4194304 bit			e0			.00005 Amp		120 ns
K3N4U3000D-DC12	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	1048576 words	3	3	8	IN-LINE	DIP32,.6		MASK ROMs	2.54 mm	70 Cel		1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		3.3 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	2.7 V	TTL COMPATIBLE I/O	e0			.00003 Amp	41.91 mm	120 ns
KM2364SP-20	Samsung	MASK ROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE			60 mA	8192 words	5	5	8	IN-LINE	DIP24,.6		MASK ROMs	2.54 mm	70 Cel		8KX8	8K	0 Cel	TIN LEAD	DUAL	R-PDIP-T24	3				Not Qualified	65536 bit			e0					200 ns
KM23C32100-15	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	2097152 words	5	5	16	IN-LINE	DIP42,.6		MASK ROMs	2.54 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		5.5 V	5.08 mm	15.24 mm	Not Qualified	33554432 bit	4.5 V		e0			.0001 Amp	52.43 mm	150 ns
KM23C16000D-15	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	5	5	16	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		1MX16	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V	CONFIGURABLE AS 1M X 16	e0			.00005 Amp	52.42 mm	150 ns
KM23V16000D-12	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	1048576 words	3	3/3.3	16	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		1MX16	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		3.3 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	2.7 V	IT CAN ALSO OPERATE AT 3.3V VCC	e0			.00003 Amp	52.42 mm	120 ns
K3N5C1000F-DC15	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			70 mA	1048576 words	5	5	16	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T42					Not Qualified	16777216 bit			e0			.00005 Amp		150 ns
KM23C8000A-25	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	5	5	8	IN-LINE	DIP32,.6		MASK ROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e0			.00005 Amp	41.91 mm	250 ns
KM23128SPI-20	Samsung	MASK ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE			75 mA	16384 words	5	5	8	IN-LINE	DIP28,.6		MASK ROMs	2.54 mm	85 Cel		16KX8	16K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28	3				Not Qualified	131072 bit			e0					200 ns
KM23C4100D-8	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	5	5	16	IN-LINE	DIP40,.6	8	MASK ROMs	2.54 mm	70 Cel		256KX16	256K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	CONFIGURABLE AS 256K X 16	e0			.00005 Amp	52.42 mm	80 ns
K3P5C1000D-DC120	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words	5		16	IN-LINE		8		2.54 mm	70 Cel		1MX16	1M	0 Cel		DUAL	R-PDIP-T42		5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		52.42 mm	120 ns
KM23C32000-15	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	2097152 words	5	5	16	IN-LINE	DIP42,.6		MASK ROMs	2.54 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		5.5 V	5.08 mm	15.24 mm	Not Qualified	33554432 bit	4.5 V		e0			.00005 Amp	52.43 mm	150 ns
KM23C4100-15	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	8	IN-LINE	DIP40,.6	16	MASK ROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			.0001 Amp	52.43 mm	150 ns
K3N4V1000E-DC12	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	3.3	3.3	16	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		512KX16	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		3.6 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	3 V		e0			.00003 Amp	52.42 mm	120 ns
KM2365P-20	Samsung	MASK ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE			60 mA	8192 words	5	5	8	IN-LINE	DIP28,.6		MASK ROMs	2.54 mm	70 Cel		8KX8	8K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28	3				Not Qualified	65536 bit			e0					200 ns
K3N5U1000E-DC120	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words	3		16	IN-LINE		8		2.54 mm	70 Cel		1MX16	1M	0 Cel		DUAL	R-PDIP-T42		3.3 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		52.42 mm	120 ns
KM23256P-20	Samsung	MASK ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE			75 mA	32768 words	5	5	8	IN-LINE	DIP28,.6		MASK ROMs	2.54 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28	3				Not Qualified	262144 bit			e0					200 ns
K3N5V1000D-DC10	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words	3.3		16	IN-LINE		8		2.54 mm	70 Cel		1MX16	1M	0 Cel		DUAL	R-PDIP-T42		3.6 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	3 V	CONFIGURABLE AS 1M X 16					52.42 mm	100 ns
KM23C32000A-20	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL		60 mA	2097152 words	5	5	16	IN-LINE	DIP42,.6		MASK ROMs	2.54 mm	70 Cel		2MX16	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T42		5.5 V	5.08 mm	15.24 mm	Not Qualified	33554432 bit	4.5 V		e0			.00005 Amp	52.25 mm	200 ns
KM2365PI-20	Samsung	MASK ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE			60 mA	8192 words	5	5	8	IN-LINE	DIP28,.6		MASK ROMs	2.54 mm	85 Cel		8KX8	8K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28	3				Not Qualified	65536 bit			e0					200 ns
K3P4V1000D-DC10	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	524288 words	3.3	3.3	16	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		512KX16	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		3.6 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	3 V	CONFIGURABLE AS 512K X 16	e0			.00003 Amp	52.42 mm	100 ns
KM23V8001B-25	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	3.3	3/3.3	8	IN-LINE	DIP32,.6		MASK ROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		3.6 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	2.7 V		e0			.03 Amp	41.91 mm	250 ns
KM23C2100H-10	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	5	5	8	IN-LINE	DIP40,.6	16	MASK ROMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V		e0			.00005 Amp	52.43 mm	100 ns
KM23C8100D	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words	5		8	IN-LINE				2.54 mm	70 Cel		1MX8	1M	0 Cel		DUAL	R-PDIP-T42		5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V	USER CONFIGURABLE AS 512K X 16					52.42 mm	100 ns
KM23V4100C	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			25 mA	262144 words		3/3.3	16	IN-LINE	DIP40,.6	8	MASK ROMs	2.54 mm	70 Cel		256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T40					Not Qualified	4194304 bit			e0			.00003 Amp		150 ns
KM23C2001A-10	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	5	5	8	IN-LINE	DIP32,.6		MASK ROMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V		e0			.04 Amp	41.91 mm	100 ns
KM23V16101A-35	Samsung	MASK ROM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	3	3/3.3	8	IN-LINE	DIP36,.6		MASK ROMs	2.54 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	R-PDIP-T36		3.3 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	2.7 V		e0			.03 Amp	45.72 mm	350 ns
KM23V16000A-20	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	3.3	3/3.3	8	IN-LINE	DIP42,.6	16	MASK ROMs	2.54 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		3.6 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	2.7 V		e0			.00005 Amp	52.43 mm	200 ns
KM23C4100A-20	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	8	IN-LINE	DIP40,.6	16	MASK ROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			.00005 Amp	52.43 mm	200 ns
KM23257SPI-20	Samsung	MASK ROM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE			75 mA	32768 words			8	IN-LINE	DIP28,.6		MASK ROMs	2.54 mm	125 Cel		32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28	3				Not Qualified	262144 bit			e0					200 ns
KM23C16000B-12	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			60 mA	1048576 words	5	5	16	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		1MX16	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42	3				Not Qualified	16777216 bit			e0			.00005 Amp		120 ns
K3N7C3000M-DC15	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	8388608 words	5	5	8	IN-LINE	DIP42,.6		MASK ROMs	2.54 mm	70 Cel		8MX8	8M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		5.5 V	5.08 mm	15.24 mm	Not Qualified	67108864 bit	4.5 V		e0				52.42 mm	150 ns
KM23C8100D-12	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	16	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		512KX16	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V	CONFIGURABLE AS 512K X 16	e0			.00005 Amp	52.42 mm	120 ns
KM23C4200B-15	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	5	5	8	IN-LINE	DIP40,.6	16	MASK ROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			.00005 Amp	52.43 mm	150 ns
KM23V16100A-30	Samsung	MASK ROM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	3.3	3/3.3	8	IN-LINE	DIP36,.6		MASK ROMs	2.54 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	R-PDIP-T36		3.6 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	2.7 V		e0			.00005 Amp	45.72 mm	300 ns
KM23C4000-15	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	524288 words	5	5	8	IN-LINE	DIP32,.6		MASK ROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			.0001 Amp	41.91 mm	150 ns
K3P5C1000D-DC100	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words	5		16	IN-LINE		8		2.54 mm	70 Cel		1MX16	1M	0 Cel		DUAL	R-PDIP-T42		5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		52.42 mm	100 ns
KM23C4100A-12	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	8	IN-LINE	DIP40,.6	16	MASK ROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			.00005 Amp	52.43 mm	120 ns
K3N5C1000D-DC10	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	5	5	16	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		1MX16	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V	ALL INPUTS AND OUTPUTS TTL COMPATIBLE	e0			.00005 Amp	52.42 mm	100 ns
K3P5V1000F-DC12	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	1048576 words	3.3	3.3	16	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		1MX16	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		3.6 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	3 V		e0			.00003 Amp	52.42 mm	120 ns
KM23V8000B-20	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	3.3	3/3.3	8	IN-LINE	DIP32,.6		MASK ROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		3.6 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	2.7 V		e0			.00005 Amp	41.91 mm	200 ns
KM23C8100H-15	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	1048576 words	5	5	8	IN-LINE	DIP42,.6	16	MASK ROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e0			.00005 Amp	52.43 mm	150 ns
K3P4C1000E-DC15	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			80 mA	524288 words	5	5	16	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		512KX16	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T42	3				Not Qualified	8388608 bit			e0			.00005 Amp		150 ns
KM23257P-25	Samsung	MASK ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE			75 mA	32768 words			8	IN-LINE	DIP28,.6		MASK ROMs	2.54 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28	3				Not Qualified	262144 bit			e0					250 ns
KM2365SP-20	Samsung	MASK ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE			60 mA	8192 words	5	5	8	IN-LINE	DIP28,.6		MASK ROMs	2.54 mm	70 Cel		8KX8	8K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28	3				Not Qualified	65536 bit			e0					200 ns

MASK ROM

Mask ROM, or Read-Only Memory, is a type of non-volatile computer memory that is programmed during the manufacturing process. Mask ROM is designed to permanently store data and cannot be reprogrammed after it has been manufactured.

Mask ROM is created by a process known as photolithography. This process involves using a mask, or template, to expose specific areas of a silicon wafer to ultraviolet light. The areas that are exposed to the light are then etched away, leaving behind the patterns that make up the memory cells. Once the memory cells have been created, they are permanently programmed with the data that they will store.

Mask ROM is commonly used in devices that require permanent storage of data, such as game consoles, calculators, and other electronic devices. Because the data is permanently programmed during manufacturing, mask ROM provides a reliable and secure way to store critical data, such as system settings, firmware, and other important information.

One of the advantages of using mask ROM is that it is a cost-effective way to produce large quantities of memory. Because the data is programmed during the manufacturing process, the cost per unit is relatively low compared to other types of non-volatile memory, such as EEPROM or flash memory.