RECTANGULAR MASK ROM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Output Characteristics Organization No. of Words Code Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Length Maximum Access Time

K3P4V1000D-TE100

Samsung

MASK ROM

OTHER

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

3.3

16

SMALL OUTLINE, THIN PROFILE

8

.8 mm

85 Cel

512KX16

512K

-20 Cel

DUAL

R-PDSO-G44

3.6 V

1.2 mm

10.16 mm

Not Qualified

8388608 bit

3 V

30

240

18.41 mm

100 ns

KM23C4000DG

Samsung

MASK ROM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

512KX8

512K

0 Cel

DUAL

R-PDSO-G32

5.5 V

3 mm

11.43 mm

Not Qualified

4194304 bit

4.5 V

20.47 mm

80 ns

K3P4C1000E-GC150

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

16

SMALL OUTLINE

8

1.27 mm

70 Cel

512KX16

512K

0 Cel

DUAL

R-PDSO-G44

5.5 V

3.1 mm

12.6 mm

Not Qualified

8388608 bit

4.5 V

30

225

28.5 mm

150 ns

K3N4C1000E-GC150

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

16

SMALL OUTLINE

8

1.27 mm

70 Cel

512KX16

512K

0 Cel

DUAL

R-PDSO-G44

5.5 V

3.1 mm

12.6 mm

Not Qualified

8388608 bit

4.5 V

30

225

28.5 mm

150 ns

K3N5U1000F-DC12

Samsung

MASK ROM

COMMERCIAL

42

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

35 mA

1048576 words

3

3

16

IN-LINE

DIP42,.6

8

MASK ROMs

2.54 mm

70 Cel

1MX16

1M

0 Cel

TIN LEAD

DUAL

R-PDIP-T42

3.3 V

5.08 mm

15.24 mm

Not Qualified

16777216 bit

2.7 V

e0

.00003 Amp

52.42 mm

120 ns

K3N7U1000B-YC12

Samsung

MASK ROM

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

4194304 words

3

3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.71,20

8

MASK ROMs

.5 mm

70 Cel

4MX16

4M

0 Cel

TIN LEAD

DUAL

R-PDSO-G48

3.3 V

1.2 mm

12 mm

Not Qualified

67108864 bit

2.7 V

e0

.00005 Amp

16.4 mm

120 ns

K3P9V4000A-GC10

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

80 mA

8388608 words

3.3

3.3

16

SMALL OUTLINE

SOP44,.63

MASK ROMs

1.27 mm

70 Cel

8MX16

8M

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

3.6 V

3.1 mm

12.6 mm

Not Qualified

134217728 bit

3 V

e0

.00003 Amp

28.5 mm

100 ns

KM23256PI-15

Samsung

MASK ROM

INDUSTRIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

75 mA

32768 words

5

5

8

IN-LINE

DIP28,.6

MASK ROMs

2.54 mm

85 Cel

32KX8

32K

-40 Cel

TIN LEAD

DUAL

R-PDIP-T28

3

Not Qualified

262144 bit

e0

150 ns

K3N6V1000E-TC100

Samsung

MASK ROM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

3.3

16

SMALL OUTLINE, THIN PROFILE

8

.8 mm

70 Cel

2MX16

2M

0 Cel

DUAL

R-PDSO-G44

3.6 V

1.2 mm

10.16 mm

Not Qualified

33554432 bit

3 V

30

240

18.41 mm

100 ns

KM23V4000DETG-8

Samsung

MASK ROM

OTHER

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

512KX8

512K

-20 Cel

DUAL

R-PDSO-G32

3.6 V

1.2 mm

8 mm

Not Qualified

4194304 bit

3 V

11.8 mm

85 ns

KM23V64005ATY-12

Samsung

MASK ROM

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4194304 words

3

16

SMALL OUTLINE, THIN PROFILE

8

.5 mm

70 Cel

4MX16

4M

0 Cel

DUAL

R-PDSO-G48

3.3 V

1.2 mm

12 mm

Not Qualified

67108864 bit

2.7 V

CONFIGURABLE AS 4M X 16; WITH PAGE MODE FUNCTION; PAGE MODE ACCESS TIME 40NS

16.4 mm

120 ns

KM23V4000B-25

Samsung

MASK ROM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

3.3

3/3.3

8

IN-LINE

DIP32,.6

MASK ROMs

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-PDIP-T32

3.6 V

5.08 mm

15.24 mm

Not Qualified

4194304 bit

2.7 V

e0

.00005 Amp

41.91 mm

250 ns

KM23C8005B-12

Samsung

MASK ROM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

80 mA

1048576 words

5

5

8

IN-LINE

DIP32,.6

MASK ROMs

2.54 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

TIN LEAD

DUAL

R-PDIP-T32

5.5 V

5.08 mm

15.24 mm

Not Qualified

8388608 bit

4.5 V

e0

.00005 Amp

41.91 mm

120 ns

K3S7V2000M-TC15

Samsung

MASK ROM

COMMERCIAL

86

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

100 mA

2097152 words

3.3

3.3

32

SMALL OUTLINE, THIN PROFILE

TSSOP86,.46,20

16

MASK ROMs

.5 mm

70 Cel

2MX32

2M

0 Cel

TIN LEAD

DUAL

R-PDSO-G86

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

e0

.00015 Amp

22.22 mm

6 ns

KM23C256-20

Samsung

MASK ROM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

32768 words

5

5

8

IN-LINE

DIP28,.6

MASK ROMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

TIN LEAD

DUAL

R-PDIP-T28

5.5 V

5.08 mm

15.24 mm

Not Qualified

262144 bit

4.5 V

e0

.0001 Amp

36.45 mm

200 ns

K3N4C1000E-DC10

Samsung

MASK ROM

COMMERCIAL

42

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

50 mA

524288 words

5

5

16

IN-LINE

DIP42,.6

8

MASK ROMs

2.54 mm

70 Cel

512KX16

512K

0 Cel

TIN LEAD

DUAL

R-PDIP-T42

3

Not Qualified

8388608 bit

e0

.00005 Amp

100 ns

K3P4U1000D-GC12

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

524288 words

3

3

16

SMALL OUTLINE

SOP44,.63

8

MASK ROMs

1.27 mm

70 Cel

512KX16

512K

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

3.3 V

3.1 mm

12.6 mm

Not Qualified

8388608 bit

2.7 V

CONFIGURABLE AS 512K X 16

e0

.00003 Amp

28.5 mm

120 ns

K3N6V1000D-YC10

Samsung

MASK ROM

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

4194304 words

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.71,20

8

MASK ROMs

.5 mm

70 Cel

4MX8

4M

0 Cel

TIN LEAD

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

33554432 bit

3 V

ALSO CONFIGURABLE AS 2M X 16

e0

.00003 Amp

16.4 mm

100 ns

KM23V8105DET

Samsung

MASK ROM

OTHER

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

1048576 words

3

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

85 Cel

1MX8

1M

-20 Cel

TIN LEAD

DUAL

R-PDSO-G44

3.3 V

1.2 mm

10.16 mm

Not Qualified

8388608 bit

2.7 V

USER CONFIGURABLE AS 512K X 16; CAN ALSO OPERATE AT 3V TO 3.6V SUPPLY

e0

.00003 Amp

18.41 mm

120 ns

KM23C16000BG-20

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

60 mA

1048576 words

5

5

16

SMALL OUTLINE

SOP44,.63

8

MASK ROMs

1.27 mm

70 Cel

1MX16

1M

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

3

Not Qualified

16777216 bit

e0

.00005 Amp

200 ns

K3N3V3000D-YE100

Samsung

MASK ROM

OTHER

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

512KX8

512K

-20 Cel

DUAL

R-PDSO-G32

3.6 V

1.2 mm

8 mm

Not Qualified

4194304 bit

3 V

30

240

18.4 mm

100 ns

K3N7C1000M-TC15

Samsung

MASK ROM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

4194304 words

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

70 Cel

4MX16

4M

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

4.5 V

ALSO CONFIGURABLE AS 4M X 16

e0

.00005 Amp

18.41 mm

150 ns

K3N6V1000E-TC120

Samsung

MASK ROM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

3.3

16

SMALL OUTLINE, THIN PROFILE

8

.8 mm

70 Cel

2MX16

2M

0 Cel

DUAL

R-PDSO-G44

3.6 V

1.2 mm

10.16 mm

Not Qualified

33554432 bit

3 V

30

240

18.41 mm

120 ns

KM23V4100B-30

Samsung

MASK ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

3

3/3.3

8

IN-LINE

DIP40,.6

16

MASK ROMs

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-PDIP-T40

3.3 V

5.08 mm

15.24 mm

Not Qualified

4194304 bit

2.7 V

e0

.00005 Amp

52.43 mm

300 ns

KM23C4000G-20

Samsung

MASK ROM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

524288 words

5

5

8

SMALL OUTLINE

SOP32,.56

MASK ROMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

3 mm

11.43 mm

Not Qualified

4194304 bit

4.5 V

e0

.0001 Amp

20.47 mm

200 ns

KM23C32000CET-12

Samsung

MASK ROM

OTHER

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

2097152 words

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

85 Cel

2MX16

2M

-20 Cel

TIN LEAD

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

33554432 bit

4.5 V

CONFIGURABLE AS 2M X 16

e0

.00005 Amp

18.41 mm

120 ns

K3P9V1000M-YC10

Samsung

MASK ROM

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

80 mA

8388608 words

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

MASK ROMs

.5 mm

70 Cel

8MX16

8M

0 Cel

TIN LEAD

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

134217728 bit

3 V

e0

.00003 Amp

16.4 mm

100 ns

KM23V32205BSG-15

Samsung

MASK ROM

COMMERCIAL

70

SSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

80 mA

1048576 words

3.3

3.3

32

SMALL OUTLINE, SHRINK PITCH

SOP70,.63,32

16

MASK ROMs

.8 mm

70 Cel

1MX32

1M

0 Cel

TIN LEAD

DUAL

R-PDSO-G70

3.6 V

3.1 mm

12.7 mm

Not Qualified

33554432 bit

3 V

USER SELECTABLE 3.3V VCC; CONFIGURABLE AS 1M X 32; PAGE MODE ACCESS TIME 30NS

e0

.00005 Amp

28.57 mm

150 ns

K3P6U1000F-TC12

Samsung

MASK ROM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

2097152 words

3

3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

70 Cel

2MX16

2M

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

3.3 V

1.2 mm

10.16 mm

Not Qualified

33554432 bit

2.7 V

e0

.00003 Amp

18.41 mm

120 ns

K3P6V1000F-TC12

Samsung

MASK ROM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

2097152 words

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

70 Cel

2MX16

2M

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

3.6 V

1.2 mm

10.16 mm

Not Qualified

33554432 bit

3 V

e0

.00003 Amp

18.41 mm

120 ns

K3N5U1000F-TC12

Samsung

MASK ROM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

1048576 words

3

3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

70 Cel

1MX16

1M

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

3.3 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

2.7 V

e0

.00003 Amp

18.41 mm

120 ns

KM23C32000CT

Samsung

MASK ROM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

5

16

SMALL OUTLINE

.8 mm

70 Cel

2MX16

2M

0 Cel

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

33554432 bit

4.5 V

18.41 mm

150 ns

K3N3C6000D-DC08

Samsung

MASK ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

262144 words

5

5

16

IN-LINE

DIP40,.6

MASK ROMs

2.54 mm

70 Cel

256KX16

256K

0 Cel

TIN LEAD

DUAL

R-PDIP-T40

5.5 V

5.08 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

TTL COMPATIBLE I/O

e0

.00005 Amp

52.42 mm

80 ns

KM23V8000D-12

Samsung

MASK ROM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1048576 words

3

8

IN-LINE

2.54 mm

70 Cel

1MX8

1M

0 Cel

DUAL

R-PDIP-T32

3.3 V

5.08 mm

15.24 mm

Not Qualified

8388608 bit

2.7 V

41.91 mm

120 ns

KM23V8000B-30

Samsung

MASK ROM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

1048576 words

3

3/3.3

8

IN-LINE

DIP32,.6

MASK ROMs

2.54 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

TIN LEAD

DUAL

R-PDIP-T32

3.3 V

5.08 mm

15.24 mm

Not Qualified

8388608 bit

2.7 V

e0

.00005 Amp

41.91 mm

300 ns

KM23V8100B-25

Samsung

MASK ROM

COMMERCIAL

42

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

1048576 words

3.3

3/3.3

8

IN-LINE

DIP42,.6

16

MASK ROMs

2.54 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

TIN LEAD

DUAL

R-PDIP-T42

3.6 V

5.08 mm

15.24 mm

Not Qualified

8388608 bit

2.7 V

e0

.00005 Amp

52.43 mm

250 ns

K3N4C1000D-TE12

Samsung

MASK ROM

OTHER

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

524288 words

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

85 Cel

512KX16

512K

-20 Cel

TIN LEAD

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

8388608 bit

4.5 V

CONFIGURABLE AS 512K X 16

e0

.00005 Amp

18.41 mm

120 ns

KM23C32101C-15

Samsung

MASK ROM

COMMERCIAL

36

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

4194304 words

5

5

8

IN-LINE

DIP36,.6

MASK ROMs

2.54 mm

70 Cel

4MX8

4M

0 Cel

TIN LEAD

DUAL

R-PDIP-T36

5.5 V

5.08 mm

15.24 mm

Not Qualified

33554432 bit

4.5 V

e0

.05 Amp

45.72 mm

150 ns

K3P7V1000A-GC10

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

4194304 words

3.3

3.3

16

SMALL OUTLINE

SOP44,.63

8

MASK ROMs

1.27 mm

70 Cel

4MX16

4M

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

3.6 V

3.1 mm

12.6 mm

Not Qualified

67108864 bit

3 V

ALSO CONFIGURABLE AS 4M X 16

e0

.00003 Amp

28.5 mm

100 ns

K3N4V1000E-DC10

Samsung

MASK ROM

COMMERCIAL

42

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

3.3

3.3

16

IN-LINE

DIP42,.6

8

MASK ROMs

2.54 mm

70 Cel

512KX16

512K

0 Cel

TIN LEAD

DUAL

R-PDIP-T42

3.6 V

5.08 mm

15.24 mm

Not Qualified

8388608 bit

3 V

e0

.00003 Amp

52.42 mm

100 ns

KM23C512I-25

Samsung

MASK ROM

INDUSTRIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

40 mA

65536 words

5

5

8

IN-LINE

DIP28,.6

MASK ROMs

2.54 mm

85 Cel

64KX8

64K

-40 Cel

TIN LEAD

DUAL

R-PDIP-T28

3

Not Qualified

524288 bit

e0

.00004 Amp

250 ns

K3N4C1000D-DC10

Samsung

MASK ROM

COMMERCIAL

42

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

524288 words

5

5

16

IN-LINE

DIP42,.6

8

MASK ROMs

2.54 mm

70 Cel

512KX16

512K

0 Cel

TIN LEAD

DUAL

R-PDIP-T42

5.5 V

5.08 mm

15.24 mm

Not Qualified

8388608 bit

4.5 V

ALL INPUTS AND OUTPUTS TTL COMPATIBLE

e0

.00005 Amp

52.42 mm

100 ns

K3P4U1000F-TE12

Samsung

MASK ROM

OTHER

44

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

35 mA

524288 words

3

3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

85 Cel

512KX16

512K

-20 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

8388608 bit

e0

.00003 Amp

120 ns

KM23C8105BG-10

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

80 mA

1048576 words

5

5

8

SMALL OUTLINE

SOP44,.63

16

MASK ROMs

1.27 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

5.5 V

3.1 mm

12.6 mm

Not Qualified

8388608 bit

4.5 V

e0

.00005 Amp

28.5 mm

100 ns

KM23C256-12

Samsung

MASK ROM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

32768 words

5

5

8

IN-LINE

DIP28,.6

MASK ROMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

TIN LEAD

DUAL

R-PDIP-T28

5.5 V

5.08 mm

15.24 mm

Not Qualified

262144 bit

4.5 V

e0

.0001 Amp

36.45 mm

120 ns

KM23C2001AG-12

Samsung

MASK ROM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

262144 words

5

5

8

SMALL OUTLINE

SOP32,.56

MASK ROMs

1.27 mm

70 Cel

3-STATE

256KX8

256K

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

3 mm

11.43 mm

Not Qualified

2097152 bit

4.5 V

e0

.04 Amp

20.47 mm

120 ns

K3N6C1000E-YC10

Samsung

MASK ROM

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

2097152 words

5

5

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.71,20

8

MASK ROMs

.5 mm

70 Cel

2MX16

2M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G48

5.5 V

1.2 mm

12 mm

Not Qualified

33554432 bit

4.5 V

e0

.00005 Amp

16.4 mm

100 ns

KM23C8000D

Samsung

MASK ROM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1048576 words

5

8

IN-LINE

2.54 mm

70 Cel

1MX8

1M

0 Cel

DUAL

R-PDIP-T32

5.5 V

5.08 mm

15.24 mm

Not Qualified

8388608 bit

4.5 V

41.91 mm

100 ns

MASK ROM

Mask ROM, or Read-Only Memory, is a type of non-volatile computer memory that is programmed during the manufacturing process. Mask ROM is designed to permanently store data and cannot be reprogrammed after it has been manufactured.

Mask ROM is created by a process known as photolithography. This process involves using a mask, or template, to expose specific areas of a silicon wafer to ultraviolet light. The areas that are exposed to the light are then etched away, leaving behind the patterns that make up the memory cells. Once the memory cells have been created, they are permanently programmed with the data that they will store.

Mask ROM is commonly used in devices that require permanent storage of data, such as game consoles, calculators, and other electronic devices. Because the data is permanently programmed during manufacturing, mask ROM provides a reliable and secure way to store critical data, such as system settings, firmware, and other important information.

One of the advantages of using mask ROM is that it is a cost-effective way to produce large quantities of memory. Because the data is programmed during the manufacturing process, the cost per unit is relatively low compared to other types of non-volatile memory, such as EEPROM or flash memory.