OTHER MASK ROM 181

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
KM23S32005DETY-15	Samsung	MASK ROM	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words	2.5		16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	85 Cel	2MX16	2M	-20 Cel		DUAL	R-PDSO-G48		2.7 V	1.2 mm	12 mm	Not Qualified	33554432 bit	2.3 V						16.4 mm	150 ns
KM23V8100CET-15	Samsung	MASK ROM	OTHER	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			30 mA	524288 words	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	85 Cel	512KX16	512K	-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44					Not Qualified	8388608 bit			e0			.00005 Amp		150 ns
KM23V32005BET-15	Samsung	MASK ROM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words	3.3		16	SMALL OUTLINE, THIN PROFILE		8		.8 mm	85 Cel	2MX16	2M	-20 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	3 V	USER SELECTABLE 3.3V VCC; CONFIGURABLE AS 2M X 16; PAGE MODE ACCESS TIME 30NS					18.41 mm	150 ns
K3N3C3000D-YE080	Samsung	MASK ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel	512KX8	512K	-20 Cel		DUAL	R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	4194304 bit	4.5 V			30	240		18.4 mm	80 ns
KM23C4100DET-8	Samsung	MASK ROM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	85 Cel	256KX16	256K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	CONFIGURABLE AS 256K X 16	e0			.00005 Amp	18.41 mm	80 ns
KM23V32000CET-12	Samsung	MASK ROM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words	3.3		16	SMALL OUTLINE, THIN PROFILE		8		.8 mm	85 Cel	2MX16	2M	-20 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	3 V	CONFIGURABLE AS 2M X 16					18.41 mm	120 ns
KM23V4100CET	Samsung	MASK ROM	OTHER	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			25 mA	262144 words		3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	85 Cel	256KX16	256K	-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44					Not Qualified	4194304 bit			e0			.00003 Amp		150 ns
KM23C4000DETY-12	Samsung	MASK ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		MASK ROMs	.5 mm	85 Cel	512KX8	512K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	4194304 bit	4.5 V		e0			.00005 Amp	18.4 mm	120 ns
K3N3S3000D-YE250	Samsung	MASK ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	2.5		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel	512KX8	512K	-20 Cel		DUAL	R-PDSO-G32		2.7 V	1.2 mm	8 mm	Not Qualified	4194304 bit	2.3 V						18.4 mm	250 ns
K3N6V1000D-YE	Samsung	MASK ROM	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words	3.3		16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	85 Cel	2MX16	2M	-20 Cel		DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	33554432 bit	3 V						16.4 mm	100 ns
KM23C16005DET-12	Samsung	MASK ROM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words	5		8	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel	2MX8	2M	-20 Cel		DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	CONFIGURABLE AS 1M X 16					18.41 mm	120 ns
KM23V32005BETY	Samsung	MASK ROM	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20	8	MASK ROMs	.5 mm	85 Cel	4MX8	4M	-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G48		3.3 V	1.2 mm	12 mm	Not Qualified	33554432 bit	2.7 V	CONFIGURABLE AS 2M X 16; IT CAN ALSO OPERATE AT 3V TO 3.6V SUPPLY	e0			.00003 Amp	16.4 mm	100 ns
K3N4U1000D-TE12	Samsung	MASK ROM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	3	3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	85 Cel	512KX16	512K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G44		3.3 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	2.7 V	CONFIGURABLE AS 512K X 16	e0			.00003 Amp	18.41 mm	120 ns
KM23V4000DETG-9	Samsung	MASK ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel	512KX8	512K	-20 Cel		DUAL	R-PDSO-G32		3.3 V	1.2 mm	8 mm	Not Qualified	4194304 bit	2.7 V						11.8 mm	95 ns
KM23C4100CET-15	Samsung	MASK ROM	OTHER	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			60 mA	262144 words	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	85 Cel	256KX16	256K	-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44					Not Qualified	4194304 bit			e0			.00005 Amp		150 ns
K3N3C1000D-TE10	Samsung	MASK ROM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	85 Cel	256KX16	256K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	ALL INPUTS AND OUTPUTS TTL COMPATIBLE	e0			.00005 Amp	18.41 mm	100 ns
K3N6U1000D-YE	Samsung	MASK ROM	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words	3		16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	85 Cel	2MX16	2M	-20 Cel		DUAL	R-PDSO-G48		3.3 V	1.2 mm	12 mm	Not Qualified	33554432 bit	2.7 V						16.4 mm	100 ns
K3P6V1000B-TE15	Samsung	MASK ROM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	2097152 words	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	85 Cel	2MX16	2M	-20 Cel	TIN LEAD	DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	3 V	ALL INPUTS AND OUTPUTS TTL COMPATIBLE	e0			.00003 Amp	18.41 mm	150 ns
KM23V8100CET-20	Samsung	MASK ROM	OTHER	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			30 mA	524288 words	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	85 Cel	512KX16	512K	-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44					Not Qualified	8388608 bit			e0			.00005 Amp		200 ns
K3N3C1000D-TE120	Samsung	MASK ROM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words	5		16	SMALL OUTLINE, THIN PROFILE		8		.8 mm	85 Cel	256KX16	256K	-20 Cel		DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V			30	240		18.41 mm	120 ns
KM23V4100DET	Samsung	MASK ROM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	85 Cel	512KX8	512K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G44		3.3 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V	USER CONFIGURABLE AS 256K X 16; CAN ALSO OPERATE AT 3V TO 3.6V SUPPLY	e0			.00003 Amp	18.41 mm	120 ns
KM23S4000DETY-25	Samsung	MASK ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	2.5		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel	512KX8	512K	-20 Cel		DUAL	R-PDSO-G32		2.7 V	1.2 mm	8 mm	Not Qualified	4194304 bit	2.3 V						18.4 mm	250 ns
KM23V4000DETG-95	Samsung	MASK ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel	512KX8	512K	-20 Cel		DUAL	R-PDSO-G32		3.3 V	1.2 mm	8 mm	Not Qualified	4194304 bit	2.7 V						11.8 mm	95 ns
K3N6C1000C-TE10	Samsung	MASK ROM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	2097152 words	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	85 Cel	2MX16	2M	-20 Cel	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	4.5 V	ALSO CONFIGURABLE AS 2M X 16	e0			.00005 Amp	18.41 mm	100 ns
KM23C8100CET-12	Samsung	MASK ROM	OTHER	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			60 mA	524288 words	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	85 Cel	512KX16	512K	-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44					Not Qualified	8388608 bit			e0			.00005 Amp		120 ns
KM23C4100CET-12	Samsung	MASK ROM	OTHER	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			60 mA	262144 words	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	85 Cel	256KX16	256K	-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44					Not Qualified	4194304 bit			e0			.00005 Amp		120 ns
K3N3V1000D-TE100	Samsung	MASK ROM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words	3.3		16	SMALL OUTLINE, THIN PROFILE		8		.8 mm	85 Cel	256KX16	256K	-20 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V			30	240		18.41 mm	100 ns
KM23S32000BETY	Samsung	MASK ROM	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			20 mA	2097152 words	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20	8	MASK ROMs	.5 mm	85 Cel	2MX16	2M	-20 Cel	TIN LEAD	DUAL	R-PDSO-G48	3				Not Qualified	33554432 bit			e0			.000005 Amp		120 ns
KM23V4000DETY	Samsung	MASK ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		MASK ROMs	.5 mm	85 Cel	512KX8	512K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G32		3.3 V	1.2 mm	8 mm	Not Qualified	4194304 bit	2.7 V	CAN ALSO OPERATE AT 3V TO 3.6V SUPPLY	e0			.00003 Amp	18.4 mm	120 ns
KM23V32005BET-12	Samsung	MASK ROM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words	3.3		16	SMALL OUTLINE, THIN PROFILE		8		.8 mm	85 Cel	2MX16	2M	-20 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	3 V	USER SELECTABLE 3.3V VCC; CONFIGURABLE AS 2M X 16; PAGE MODE ACCESS TIME 30NS					18.41 mm	120 ns
KM23V32000DETY-10	Samsung	MASK ROM	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words	3		16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	85 Cel	2MX16	2M	-20 Cel		DUAL	R-PDSO-G48		3.3 V	1.2 mm	12 mm	Not Qualified	33554432 bit	2.7 V	USER SELECTABLE 3.3V VCC					16.4 mm	100 ns
K3N3U3000D-YE120	Samsung	MASK ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel	512KX8	512K	-20 Cel		DUAL	R-PDSO-G32		3.3 V	1.2 mm	8 mm	Not Qualified	4194304 bit	2.7 V			30	240		18.4 mm	120 ns
K3P4U1000D-TE120	Samsung	MASK ROM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	3		16	SMALL OUTLINE, THIN PROFILE		8		.8 mm	85 Cel	512KX16	512K	-20 Cel		DUAL	R-PDSO-G44		3.3 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	2.7 V			30	240		18.41 mm	120 ns
K3N3U3000D-AE950	Samsung	MASK ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel	512KX8	512K	-20 Cel		DUAL	R-PDSO-G32		3.3 V	1.2 mm	8 mm	Not Qualified	4194304 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		11.8 mm	95 ns
K3P6U1000D-YE10	Samsung	MASK ROM	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	4194304 words	3	3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20	8	MASK ROMs	.5 mm	85 Cel	4MX8	4M	-20 Cel	TIN LEAD	DUAL	R-PDSO-G48		3.3 V	1.2 mm	12 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONFIGURABLE AS 2M X 16	e0			.00003 Amp	16.4 mm	100 ns
K3N3S3000D-YE25	Samsung	MASK ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		MASK ROMs	.5 mm	85 Cel	512KX8	512K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G32		2.7 V	1.2 mm	8 mm	Not Qualified	4194304 bit	2.3 V	TTL COMPATIBLE I/O	e0			.00003 Amp	18.4 mm	250 ns
K3N3V3000D-YE10	Samsung	MASK ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		MASK ROMs	.5 mm	85 Cel	512KX8	512K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE I/O	e0			.00003 Amp	18.4 mm	100 ns
KM23C8105DET-15	Samsung	MASK ROM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	524288 words	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	85 Cel	512KX16	512K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	4.5 V	CONFIGURABLE AS 512K X 16	e0			.00005 Amp	18.41 mm	150 ns
K3N4C1000D-TE10	Samsung	MASK ROM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	85 Cel	512KX16	512K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	4.5 V	CONFIGURABLE AS 512K X 16	e0			.00005 Amp	18.41 mm	100 ns
KM23V4000DETG-85	Samsung	MASK ROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	3.3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel	512KX8	512K	-20 Cel		DUAL	R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	4194304 bit	3 V						11.8 mm	85 ns
K3P6V1000B-TE10	Samsung	MASK ROM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	2097152 words	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	85 Cel	2MX16	2M	-20 Cel	TIN LEAD	DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	3 V	ALL INPUTS AND OUTPUTS TTL COMPATIBLE	e0			.00003 Amp	18.41 mm	100 ns
KM23C16000CET-10	Samsung	MASK ROM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	2097152 words	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	85 Cel	2MX8	2M	-20 Cel	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	CONFIGURABLE AS 1M X 16	e0			.00005 Amp	18.41 mm	100 ns
K3P6V1000D-YE10	Samsung	MASK ROM	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20	8	MASK ROMs	.5 mm	85 Cel	4MX8	4M	-20 Cel	TIN LEAD	DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	33554432 bit	3 V	ALSO CONFIGURABLE AS 2M X 16	e0			.00003 Amp	16.4 mm	100 ns
KM23V8105DET-10	Samsung	MASK ROM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	524288 words	3.3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	85 Cel	512KX16	512K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	3 V		e0			.00003 Amp	18.41 mm	100 ns
K3N4C1000D-TE15	Samsung	MASK ROM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	85 Cel	512KX16	512K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	4.5 V	CONFIGURABLE AS 512K X 16	e0			.00005 Amp	18.41 mm	150 ns
K3N3C1000D-TE12	Samsung	MASK ROM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	85 Cel	256KX16	256K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	ALL INPUTS AND OUTPUTS TTL COMPATIBLE	e0			.00005 Amp	18.41 mm	120 ns
KM23C8100DET-12	Samsung	MASK ROM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	85 Cel	512KX16	512K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	4.5 V	CONFIGURABLE AS 512K X 16	e0			.00005 Amp	18.41 mm	120 ns
K3N4V1000D-TE100	Samsung	MASK ROM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	3.3		16	SMALL OUTLINE, THIN PROFILE		8		.8 mm	85 Cel	512KX16	512K	-20 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	3 V			30	240		18.41 mm	100 ns

MASK ROM

Mask ROM, or Read-Only Memory, is a type of non-volatile computer memory that is programmed during the manufacturing process. Mask ROM is designed to permanently store data and cannot be reprogrammed after it has been manufactured.

Mask ROM is created by a process known as photolithography. This process involves using a mask, or template, to expose specific areas of a silicon wafer to ultraviolet light. The areas that are exposed to the light are then etched away, leaving behind the patterns that make up the memory cells. Once the memory cells have been created, they are permanently programmed with the data that they will store.

Mask ROM is commonly used in devices that require permanent storage of data, such as game consoles, calculators, and other electronic devices. Because the data is permanently programmed during manufacturing, mask ROM provides a reliable and secure way to store critical data, such as system settings, firmware, and other important information.

One of the advantages of using mask ROM is that it is a cost-effective way to produce large quantities of memory. Because the data is programmed during the manufacturing process, the cost per unit is relatively low compared to other types of non-volatile memory, such as EEPROM or flash memory.