OTHER MASK ROM 181

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Output Characteristics Organization No. of Words Code Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Length Maximum Access Time

TSP60C20N

Texas Instruments

MASK ROM

OTHER

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

1 mA

16384 words

16

IN-LINE

DIP28,.6

MASK ROMs

2.54 mm

80 Cel

16KX16

16K

-40 Cel

DUAL

R-PDIP-T28

Not Qualified

262144 bit

.0002 Amp

TSP60C80N

Texas Instruments

MASK ROM

OTHER

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

.3 mA

65536 words

5

5

16

IN-LINE

DIP28,.6

MASK ROMs

2.54 mm

80 Cel

64KX16

64K

-40 Cel

DUAL

R-PDIP-T28

Not Qualified

1048576 bit

.0001 Amp

TSP60C19N

Texas Instruments

MASK ROM

OTHER

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

.3 mA

16384 words

5

5

16

IN-LINE

DIP16,.3

MASK ROMs

2.54 mm

80 Cel

16KX16

16K

-40 Cel

DUAL

R-PDIP-T16

Not Qualified

262144 bit

.0001 Amp

LC3101(DIP42S)

Onsemi

MASK ROM

OTHER

42

SDIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

2 mA

5

5

IN-LINE, SHRINK PITCH

SDIP42,.6

MASK ROMs

1.78 mm

70 Cel

-30 Cel

DUAL

R-PDIP-T42

Not Qualified

131072 bit

25600 ns

LC3101(DIP42)

Onsemi

MASK ROM

OTHER

42

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

2 mA

5

5

IN-LINE

DIP42,.6

MASK ROMs

2.54 mm

70 Cel

-30 Cel

DUAL

R-PDIP-T42

Not Qualified

131072 bit

25600 ns

TC531000AP

Toshiba

MASK ROM

OTHER

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

50 mA

131072 words

5

5

8

IN-LINE

DIP28,.6

MASK ROMs

2.54 mm

70 Cel

128KX8

128K

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T28

Not Qualified

1048576 bit

e0

.00002 Amp

150 ns

TC531000AF

Toshiba

MASK ROM

OTHER

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

50 mA

131072 words

5

5

8

SMALL OUTLINE

SOP28,.5

MASK ROMs

1.27 mm

70 Cel

128KX8

128K

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G28

Not Qualified

1048576 bit

e0

.00002 Amp

150 ns

TC531001CP-15

Toshiba

MASK ROM

OTHER

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE

2.54 mm

70 Cel

3-STATE

128KX8

128K

-40 Cel

TIN LEAD

DUAL

R-PDIP-T32

5.5 V

4.8 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e0

42 mm

150 ns

TC531001CF-12

Toshiba

MASK ROM

OTHER

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

131072 words

5

5

8

SMALL OUTLINE

SOP32,.56

MASK ROMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

-40 Cel

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

2.8 mm

10.7 mm

Not Qualified

1048576 bit

4.5 V

e0

.0002 Amp

20.6 mm

120 ns

TC531000CF

Toshiba

MASK ROM

OTHER

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

128KX8

128K

-40 Cel

TIN LEAD

DUAL

R-PDSO-G28

5.5 V

2.7 mm

8.8 mm

Not Qualified

1048576 bit

4.5 V

e0

18.5 mm

150 ns

TC531000CF-15

Toshiba

MASK ROM

OTHER

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

45 mA

131072 words

5

5

8

SMALL OUTLINE

SOP28,.5

MASK ROMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

-40 Cel

TIN LEAD

DUAL

R-PDSO-G28

5.5 V

2.7 mm

8.8 mm

Not Qualified

1048576 bit

4.5 V

e0

.00002 Amp

18.5 mm

150 ns

TC531000CP-12

Toshiba

MASK ROM

OTHER

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

131072 words

5

5

8

IN-LINE

DIP28,.6

MASK ROMs

2.54 mm

70 Cel

3-STATE

128KX8

128K

-40 Cel

TIN LEAD

DUAL

R-PDIP-T28

5.5 V

5.3 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e0

.00002 Amp

37 mm

120 ns

TC531000CF-12

Toshiba

MASK ROM

OTHER

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

131072 words

5

5

8

SMALL OUTLINE

SOP28,.5

MASK ROMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

-40 Cel

TIN LEAD

DUAL

R-PDSO-G28

5.5 V

2.7 mm

8.8 mm

Not Qualified

1048576 bit

4.5 V

e0

.00002 Amp

18.5 mm

120 ns

TC531001CP

Toshiba

MASK ROM

OTHER

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

45 mA

131072 words

5

5

8

IN-LINE

DIP32,.6

MASK ROMs

2.54 mm

70 Cel

3-STATE

128KX8

128K

-40 Cel

TIN LEAD

DUAL

R-PDIP-T32

5.5 V

4.8 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e0

.0002 Amp

42 mm

150 ns

TC531000CP

Toshiba

MASK ROM

OTHER

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE

2.54 mm

70 Cel

3-STATE

128KX8

128K

-40 Cel

TIN LEAD

DUAL

R-PDIP-T28

5.5 V

5.3 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e0

37 mm

150 ns

TC531000CP-15

Toshiba

MASK ROM

OTHER

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

45 mA

131072 words

5

5

8

IN-LINE

DIP28,.6

MASK ROMs

2.54 mm

70 Cel

3-STATE

128KX8

128K

-40 Cel

TIN LEAD

DUAL

R-PDIP-T28

5.5 V

5.3 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e0

.00002 Amp

37 mm

150 ns

TC531001CF

Toshiba

MASK ROM

OTHER

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

45 mA

131072 words

5

5

8

SMALL OUTLINE

SOP32,.56

MASK ROMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

-40 Cel

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

2.8 mm

10.7 mm

Not Qualified

1048576 bit

4.5 V

e0

.0002 Amp

20.6 mm

150 ns

TC531001AP

Toshiba

MASK ROM

OTHER

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

50 mA

131072 words

5

5

8

IN-LINE

DIP32,.6

MASK ROMs

2.54 mm

70 Cel

128KX8

128K

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T32

Not Qualified

1048576 bit

e0

.00002 Amp

150 ns

TC531001CF-15

Toshiba

MASK ROM

OTHER

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

128KX8

128K

-40 Cel

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

2.8 mm

10.7 mm

Not Qualified

1048576 bit

4.5 V

e0

20.6 mm

150 ns

TC531001CP-12

Toshiba

MASK ROM

OTHER

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

131072 words

5

5

8

IN-LINE

DIP32,.6

MASK ROMs

2.54 mm

70 Cel

3-STATE

128KX8

128K

-40 Cel

TIN LEAD

DUAL

R-PDIP-T32

5.5 V

4.8 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e0

.0002 Amp

42 mm

120 ns

KM23S32000BETY-12

Samsung

MASK ROM

OTHER

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4194304 words

2.5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

4MX8

4M

-20 Cel

DUAL

R-PDSO-G48

2.7 V

1.2 mm

12 mm

Not Qualified

33554432 bit

2.3 V

TTL COMPATIBLE I/O; CONFIGURABLE AS 2M X 16

16.4 mm

120 ns

KM23V32000BETY-8

Samsung

MASK ROM

OTHER

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4194304 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

4MX8

4M

-20 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

33554432 bit

3 V

TTL COMPATIBLE I/O; CONFIGURABLE AS 2M X 16

16.4 mm

80 ns

KM23C16000CET-15

Samsung

MASK ROM

OTHER

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

2097152 words

5

5

8

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

85 Cel

2MX8

2M

-20 Cel

TIN LEAD

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

CONFIGURABLE AS 1M X 16

e0

.00005 Amp

18.41 mm

150 ns

KM23V4000DETG

Samsung

MASK ROM

OTHER

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

25 mA

524288 words

3

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.56,20

MASK ROMs

.5 mm

85 Cel

512KX8

512K

-20 Cel

TIN LEAD

DUAL

R-PDSO-G32

3.3 V

1.2 mm

8 mm

Not Qualified

4194304 bit

2.7 V

CAN ALSO OPERATE AT 3V TO 3.6V SUPPLY

e0

.00003 Amp

11.8 mm

95 ns

KM23C16005DET-15

Samsung

MASK ROM

OTHER

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

5

8

SMALL OUTLINE, THIN PROFILE

.8 mm

85 Cel

2MX8

2M

-20 Cel

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

CONFIGURABLE AS 1M X 16

18.41 mm

150 ns

K3N3U1000D-TE12

Samsung

MASK ROM

OTHER

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

20 mA

262144 words

3

3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

85 Cel

256KX16

256K

-20 Cel

TIN LEAD

DUAL

R-PDSO-G44

3.3 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

2.7 V

ALL INPUTS AND OUTPUTS TTL COMPATIBLE

e0

.00003 Amp

18.41 mm

120 ns

K3N3U1000D-TE120

Samsung

MASK ROM

OTHER

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

3

16

SMALL OUTLINE, THIN PROFILE

8

.8 mm

85 Cel

256KX16

256K

-20 Cel

DUAL

R-PDSO-G44

3.3 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

2.7 V

30

240

18.41 mm

120 ns

KM23C8105DET-12

Samsung

MASK ROM

OTHER

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

80 mA

524288 words

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

85 Cel

512KX16

512K

-20 Cel

TIN LEAD

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

8388608 bit

4.5 V

CONFIGURABLE AS 512K X 16

e0

.00005 Amp

18.41 mm

120 ns

K3N6V1000C-TE12

Samsung

MASK ROM

OTHER

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

3.3

16

SMALL OUTLINE, THIN PROFILE

8

.8 mm

85 Cel

2MX16

2M

-20 Cel

DUAL

R-PDSO-G44

3.6 V

1.2 mm

10.16 mm

Not Qualified

33554432 bit

3 V

18.41 mm

120 ns

K3N6C1500C-TE15

Samsung

MASK ROM

OTHER

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4194304 words

5

8

SMALL OUTLINE

85 Cel

4MX8

4M

-20 Cel

TIN LEAD

DUAL

R-PDSO-G44

5.5 V

Not Qualified

33554432 bit

4.5 V

ALSO CONFIGURABLE AS 2M X 16

e0

150 ns

KM23V32000CET-15

Samsung

MASK ROM

OTHER

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

3

16

SMALL OUTLINE, THIN PROFILE

8

.8 mm

85 Cel

2MX16

2M

-20 Cel

DUAL

R-PDSO-G44

3.3 V

1.2 mm

10.16 mm

Not Qualified

33554432 bit

2.7 V

CONFIGURABLE AS 2M X 16

18.41 mm

150 ns

KM23V4000DETY-12

Samsung

MASK ROM

OTHER

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

512KX8

512K

-20 Cel

DUAL

R-PDSO-G32

3.3 V

1.2 mm

8 mm

Not Qualified

4194304 bit

2.7 V

18.4 mm

120 ns

K3P4C1000D-TE150

Samsung

MASK ROM

OTHER

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

16

SMALL OUTLINE, THIN PROFILE

8

.8 mm

85 Cel

512KX16

512K

-20 Cel

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

8388608 bit

4.5 V

30

240

18.41 mm

150 ns

KM23C4100CET-10

Samsung

MASK ROM

OTHER

44

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

60 mA

262144 words

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

85 Cel

256KX16

256K

-20 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

4194304 bit

e0

.00005 Amp

100 ns

KM23V32000BETY-10

Samsung

MASK ROM

OTHER

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4194304 words

3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

4MX8

4M

-20 Cel

DUAL

R-PDSO-G48

3.3 V

1.2 mm

12 mm

Not Qualified

33554432 bit

2.7 V

TTL COMPATIBLE I/O; CONFIGURABLE AS 2M X 16

16.4 mm

100 ns

K3N4V1000D-TE10

Samsung

MASK ROM

OTHER

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

85 Cel

512KX16

512K

-20 Cel

TIN LEAD

DUAL

R-PDSO-G44

3.6 V

1.2 mm

10.16 mm

Not Qualified

8388608 bit

3 V

CONFIGURABLE AS 512K X 16

e0

.00003 Amp

18.41 mm

100 ns

K3N3C3000D-YE10

Samsung

MASK ROM

OTHER

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

524288 words

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

MASK ROMs

.5 mm

85 Cel

512KX8

512K

-20 Cel

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

4194304 bit

4.5 V

TTL COMPATIBLE I/O

e0

.00005 Amp

18.4 mm

100 ns

K3N3C3000D-YE120

Samsung

MASK ROM

OTHER

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

512KX8

512K

-20 Cel

DUAL

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

4194304 bit

4.5 V

30

240

18.4 mm

120 ns

K3N3V3000D-AE850

Samsung

MASK ROM

OTHER

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

512KX8

512K

-20 Cel

DUAL

R-PDSO-G32

3.6 V

1.2 mm

8 mm

Not Qualified

4194304 bit

3 V

NOT SPECIFIED

NOT SPECIFIED

11.8 mm

85 ns

K3N6C1000C-TE12

Samsung

MASK ROM

OTHER

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

2097152 words

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

85 Cel

2MX16

2M

-20 Cel

TIN LEAD

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

33554432 bit

4.5 V

e0

.00005 Amp

18.41 mm

120 ns

KM23C16005DET-10

Samsung

MASK ROM

OTHER

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

5

8

SMALL OUTLINE, THIN PROFILE

.8 mm

85 Cel

2MX8

2M

-20 Cel

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

CONFIGURABLE AS 1M X 16

18.41 mm

100 ns

KM23V8105DET-12

Samsung

MASK ROM

OTHER

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

524288 words

3

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

85 Cel

512KX16

512K

-20 Cel

TIN LEAD

DUAL

R-PDSO-G44

3.3 V

1.2 mm

10.16 mm

Not Qualified

8388608 bit

2.7 V

e0

.00003 Amp

18.41 mm

120 ns

KM23V4000DETY-10

Samsung

MASK ROM

OTHER

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

512KX8

512K

-20 Cel

DUAL

R-PDSO-G32

3.6 V

1.2 mm

8 mm

Not Qualified

4194304 bit

3 V

18.4 mm

100 ns

KM23C4000DETY-8

Samsung

MASK ROM

OTHER

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

524288 words

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

MASK ROMs

.5 mm

85 Cel

512KX8

512K

-20 Cel

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

4194304 bit

4.5 V

e0

.00005 Amp

18.4 mm

80 ns

K3P4C1000D-TE15

Samsung

MASK ROM

OTHER

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

80 mA

524288 words

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

85 Cel

512KX16

512K

-20 Cel

TIN LEAD

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

8388608 bit

4.5 V

ALL INPUTS AND OUTPUTS TTL COMPATIBLE

e0

.00005 Amp

18.41 mm

150 ns

K3N6C1200C-TE12

Samsung

MASK ROM

OTHER

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4194304 words

5

8

SMALL OUTLINE

85 Cel

4MX8

4M

-20 Cel

TIN LEAD

DUAL

R-PDSO-G44

5.5 V

Not Qualified

33554432 bit

4.5 V

ALSO CONFIGURABLE AS 2M X 16

e0

120 ns

KM23V16000DET-10

Samsung

MASK ROM

OTHER

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

2097152 words

3

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

85 Cel

2MX8

2M

-20 Cel

TIN LEAD

DUAL

R-PDSO-G44

3.3 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

2.7 V

USER SELECTABLE 3.3V VCC; CONFIGURABLE AS 1M X 16

e0

.00003 Amp

18.41 mm

100 ns

KM23C16000DET-10

Samsung

MASK ROM

OTHER

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

5

8

SMALL OUTLINE, THIN PROFILE

.8 mm

85 Cel

2MX8

2M

-20 Cel

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

CONFIGURABLE AS 1M X 16

18.41 mm

100 ns

MASK ROM

Mask ROM, or Read-Only Memory, is a type of non-volatile computer memory that is programmed during the manufacturing process. Mask ROM is designed to permanently store data and cannot be reprogrammed after it has been manufactured.

Mask ROM is created by a process known as photolithography. This process involves using a mask, or template, to expose specific areas of a silicon wafer to ultraviolet light. The areas that are exposed to the light are then etched away, leaving behind the patterns that make up the memory cells. Once the memory cells have been created, they are permanently programmed with the data that they will store.

Mask ROM is commonly used in devices that require permanent storage of data, such as game consoles, calculators, and other electronic devices. Because the data is permanently programmed during manufacturing, mask ROM provides a reliable and secure way to store critical data, such as system settings, firmware, and other important information.

One of the advantages of using mask ROM is that it is a cost-effective way to produce large quantities of memory. Because the data is programmed during the manufacturing process, the cost per unit is relatively low compared to other types of non-volatile memory, such as EEPROM or flash memory.