Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Width | Qualification | Maximum Write Cycle Time (tWC) | Memory Density | Minimum Supply Voltage (Vsup) | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Everspin Technologies |
MRAM |
INDUSTRIAL |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
180 mA |
1048576 words |
3.3 |
3.3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
20 |
.75 mm |
85 Cel |
1MX16 |
1M |
3 V |
-40 Cel |
BOTTOM |
S-PBGA-B48 |
3.6 V |
1.35 mm |
10 mm |
Not Qualified |
.000035 ms |
16777216 bit |
3 V |
NOT SPECIFIED |
NOT SPECIFIED |
.009 Amp |
10 mm |
35 ns |
||||||
|
Everspin Technologies |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
180 mA |
2097152 words |
3.3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
20 |
.75 mm |
85 Cel |
2MX16 |
2M |
3 V |
-40 Cel |
BOTTOM |
S-PBGA-B48 |
3.6 V |
1.35 mm |
10 mm |
.000035 ms |
33554432 bit |
3 V |
.018 Amp |
10 mm |
35 ns |
||||||||||||
|
Everspin Technologies |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
180 mA |
2097152 words |
3.3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
20 |
.75 mm |
85 Cel |
2MX16 |
2M |
3 V |
-40 Cel |
BOTTOM |
S-PBGA-B48 |
3.6 V |
1.35 mm |
10 mm |
.000035 ms |
33554432 bit |
3 V |
.018 Amp |
10 mm |
35 ns |
||||||||||||
|
Everspin Technologies |
MRAM |
INDUSTRIAL |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
180 mA |
1048576 words |
3.3 |
3.3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
20 |
.75 mm |
85 Cel |
1MX16 |
1M |
3 V |
-40 Cel |
BOTTOM |
S-PBGA-B48 |
5 |
3.6 V |
1.35 mm |
10 mm |
Not Qualified |
.000035 ms |
16777216 bit |
3 V |
40 |
260 |
.009 Amp |
10 mm |
35 ns |
|||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
2097152 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
85 Cel |
2MX16 |
2M |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
33554432 bit |
2.7 V |
e1 |
260 |
.007 Amp |
10 mm |
45 ns |
||||||||
|
Everspin Technologies |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
180 mA |
2097152 words |
3.3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
20 |
.75 mm |
125 Cel |
2MX16 |
2M |
3 V |
-40 Cel |
BOTTOM |
S-PBGA-B48 |
3.6 V |
1.35 mm |
10 mm |
.000045 ms |
33554432 bit |
3 V |
.018 Amp |
10 mm |
45 ns |
||||||||||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
262144 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
85 Cel |
256KX16 |
256K |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
4194304 bit |
2.7 V |
e1 |
260 |
.0035 Amp |
10 mm |
35 ns |
||||||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
1048576 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
85 Cel |
1MX16 |
1M |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
16777216 bit |
2.7 V |
e1 |
260 |
.0035 Amp |
10 mm |
35 ns |
||||||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
262144 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
105 Cel |
256KX16 |
256K |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
4194304 bit |
2.7 V |
e1 |
260 |
.0035 Amp |
10 mm |
45 ns |
||||||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
524288 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
105 Cel |
512KX16 |
512K |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
8388608 bit |
2.7 V |
e1 |
260 |
.0035 Amp |
10 mm |
35 ns |
||||||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
1048576 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
105 Cel |
1MX16 |
1M |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
16777216 bit |
2.7 V |
e1 |
260 |
.0035 Amp |
10 mm |
35 ns |
||||||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
262144 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
105 Cel |
256KX16 |
256K |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
4194304 bit |
2.7 V |
e1 |
260 |
.0035 Amp |
10 mm |
35 ns |
||||||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
524288 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
85 Cel |
512KX16 |
512K |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
8388608 bit |
2.7 V |
e1 |
260 |
.0035 Amp |
10 mm |
45 ns |
||||||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
1048576 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
85 Cel |
1MX16 |
1M |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
16777216 bit |
2.7 V |
e1 |
260 |
.0035 Amp |
10 mm |
45 ns |
||||||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
262144 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
105 Cel |
256KX16 |
256K |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
4194304 bit |
2.7 V |
e1 |
260 |
.0035 Amp |
10 mm |
45 ns |
||||||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
524288 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
105 Cel |
512KX16 |
512K |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
8388608 bit |
2.7 V |
e1 |
260 |
.0035 Amp |
10 mm |
45 ns |
||||||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
524288 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
85 Cel |
512KX16 |
512K |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
8388608 bit |
2.7 V |
e1 |
260 |
.0035 Amp |
10 mm |
35 ns |
||||||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
1048576 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
105 Cel |
1MX16 |
1M |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
16777216 bit |
2.7 V |
e1 |
260 |
.0035 Amp |
10 mm |
45 ns |
||||||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
262144 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
85 Cel |
256KX16 |
256K |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
4194304 bit |
2.7 V |
e1 |
260 |
.0035 Amp |
10 mm |
35 ns |
||||||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
262144 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
85 Cel |
256KX16 |
256K |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
4194304 bit |
2.7 V |
e1 |
260 |
.0035 Amp |
10 mm |
45 ns |
||||||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
524288 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
85 Cel |
512KX16 |
512K |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
8388608 bit |
2.7 V |
e1 |
260 |
.0035 Amp |
10 mm |
35 ns |
||||||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
1048576 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
105 Cel |
1MX16 |
1M |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
16777216 bit |
2.7 V |
e1 |
260 |
.0035 Amp |
10 mm |
45 ns |
||||||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
1048576 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
85 Cel |
1MX16 |
1M |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
16777216 bit |
2.7 V |
e1 |
260 |
.0035 Amp |
10 mm |
35 ns |
||||||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
1048576 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
105 Cel |
1MX16 |
1M |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
16777216 bit |
2.7 V |
e1 |
260 |
.0035 Amp |
10 mm |
35 ns |
||||||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
1048576 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
85 Cel |
1MX16 |
1M |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
16777216 bit |
2.7 V |
e1 |
260 |
.0035 Amp |
10 mm |
45 ns |
||||||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
524288 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
85 Cel |
512KX16 |
512K |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
8388608 bit |
2.7 V |
e1 |
260 |
.0035 Amp |
10 mm |
45 ns |
||||||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
524288 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
105 Cel |
512KX16 |
512K |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
8388608 bit |
2.7 V |
e1 |
260 |
.0035 Amp |
10 mm |
35 ns |
||||||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
262144 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
85 Cel |
256KX16 |
256K |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
4194304 bit |
2.7 V |
e1 |
260 |
.0035 Amp |
10 mm |
45 ns |
||||||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
524288 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
105 Cel |
512KX16 |
512K |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
8388608 bit |
2.7 V |
e1 |
260 |
.0035 Amp |
10 mm |
45 ns |
||||||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
262144 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
105 Cel |
256KX16 |
256K |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
4194304 bit |
2.7 V |
e1 |
260 |
.0035 Amp |
10 mm |
35 ns |
||||||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
2097152 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
85 Cel |
2MX16 |
2M |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
33554432 bit |
2.7 V |
e1 |
260 |
.007 Amp |
10 mm |
45 ns |
||||||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
2097152 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
105 Cel |
2MX16 |
2M |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
33554432 bit |
2.7 V |
e1 |
260 |
.007 Amp |
10 mm |
35 ns |
||||||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
2097152 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
105 Cel |
2MX16 |
2M |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
33554432 bit |
2.7 V |
e1 |
260 |
.007 Amp |
10 mm |
45 ns |
||||||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
2097152 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
85 Cel |
2MX16 |
2M |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
33554432 bit |
2.7 V |
e1 |
260 |
.007 Amp |
10 mm |
35 ns |
||||||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
2097152 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
105 Cel |
2MX16 |
2M |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
33554432 bit |
2.7 V |
e1 |
260 |
.007 Amp |
10 mm |
35 ns |
||||||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
2097152 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
105 Cel |
2MX16 |
2M |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
33554432 bit |
2.7 V |
e1 |
260 |
.007 Amp |
10 mm |
45 ns |
||||||||
|
Renesas Electronics |
MRAM |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
2097152 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
10 |
.75 mm |
85 Cel |
2MX16 |
2M |
2.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.35 mm |
100000000000000 Write/Erase Cycles |
10 mm |
33554432 bit |
2.7 V |
e1 |
260 |
.007 Amp |
10 mm |
35 ns |
MRAM, or Magnetoresistive Random-Access Memory, is a type of non-volatile memory technology that uses the magnetic properties of materials to store data. MRAM combines the benefits of both traditional RAM (Random-Access Memory) and non-volatile memory technologies. Here are some key characteristics and features of MRAM:
Non-Volatile: MRAM is non-volatile, meaning it retains data even when the power is turned off. This is in contrast to traditional DRAM, which is volatile and loses data when powered down.
High Speed: MRAM offers fast read and write speeds, similar to traditional SRAM (Static Random-Access Memory). This makes it suitable for applications that require high-speed data access.
Endurance: MRAM has a high endurance, which means it can withstand a large number of write cycles without degradation. This durability is important for applications that involve frequent data updates.
Low Power Consumption: MRAM typically consumes less power compared to some other non-volatile memory technologies like Flash memory. This makes it energy-efficient and suitable for battery-powered devices.
Bit-Addressable: MRAM is bit-addressable, allowing for precise read and write operations at the individual bit level. This granularity is useful in applications where fine data control is required.
Durability: MRAM is known for its robustness and resistance to environmental factors such as radiation and extreme temperatures. This makes it suitable for applications in harsh environments, including aerospace and automotive industries.
Scalability: MRAM technology has been evolving, and efforts are ongoing to increase storage capacity while maintaining its favorable characteristics.
MRAM is used in embedded systems, IoT devices, data storage, and more, where its combination of non-volatility, speed, and endurance makes it beneficial.