COMMERCIAL MRAMs 31

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Standby Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MR2A16AYS35R	Freescale Semiconductor	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	155 mA	262144 words	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	20	.8 mm	70 Cel	256KX16	256K	3 V	MATTE TIN	DUAL	R-PDSO-G44	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	.035 ms	4194304 bit	3 V	e3	40	260	.012 Amp	18.41 mm	35 ns
MR4A08BYS35	Everspin Technologies	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	2097152 words	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	20	.8 mm	70 Cel	2MX8	2M	3 V		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	.000035 ms	16777216 bit	3 V		NOT SPECIFIED	NOT SPECIFIED	.009 Amp	18.41 mm	35 ns
MR4A08BYS35R	Everspin Technologies	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	2097152 words	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	20	.8 mm	70 Cel	2MX8	2M	3 V		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	.000035 ms	16777216 bit	3 V		NOT SPECIFIED	NOT SPECIFIED	.009 Amp	18.41 mm	35 ns
MR2S16ATS35C	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	262144 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	256KX16	256K	3 V		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	.035 ms	4194304 bit	3 V				.012 Amp	18.41 mm	35 ns
MR0S8AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	131072 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	128KX8	128K	3 V		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	.000035 ms	1048576 bit	3 V				.012 Amp	18.41 mm	35 ns
MR0A16ATS35C	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	155 mA	65536 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	64KX16	64K	3 V		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	.035 ms	1048576 bit	3 V				.012 Amp	18.41 mm	35 ns
MR1A8AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	155 mA	262144 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	256KX8	256K	3 V		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	.000035 ms	2097152 bit	3 V				.012 Amp	18.41 mm	35 ns
MR0S16ATS35C	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	65536 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	64KX16	64K	3 V		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	.035 ms	1048576 bit	3 V				.012 Amp	18.41 mm	35 ns
MR1S16AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	131072 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	128KX16	128K	3 V		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	.000035 ms	2097152 bit	3 V				.012 Amp	18.41 mm	35 ns
MR0S08ATS35C	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	131072 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	128KX8	128K	3 V		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	.035 ms	1048576 bit	3 V				.012 Amp	18.41 mm	35 ns
MR4S08AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	2097152 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	2MX8	2M	3 V		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	.035 ms	16777216 bit	3 V				.012 Amp	18.41 mm	35 ns
MR4S08ATS35C	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	2097152 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	2MX8	2M	3 V		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	.035 ms	16777216 bit	3 V				.012 Amp	18.41 mm	35 ns
MR1S16ATS35C	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	131072 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	128KX16	128K	3 V		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	.035 ms	2097152 bit	3 V				.012 Amp	18.41 mm	35 ns
MR0A08AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	128KX8	128K	3 V		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	.035 ms	1048576 bit	3 V				.012 Amp	18.41 mm	35 ns
MR1A08AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	155 mA	262144 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	256KX8	256K	3 V		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	.035 ms	2097152 bit	3 V				.012 Amp	18.41 mm	35 ns
MR2S08ATS35C	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	524288 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	512KX8	512K	3 V		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	.035 ms	4194304 bit	3 V				.012 Amp	18.41 mm	35 ns
MR1A08ATS35C	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	155 mA	262144 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	256KX8	256K	3 V		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	.035 ms	2097152 bit	3 V				.012 Amp	18.41 mm	35 ns
MR0S08AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	131072 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	128KX8	128K	3 V		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	.035 ms	1048576 bit	3 V				.012 Amp	18.41 mm	35 ns
MR0A08ATS35C	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	128KX8	128K	3 V		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	.035 ms	1048576 bit	3 V				.012 Amp	18.41 mm	35 ns
MR4S8AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	2097152 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	2MX8	2M	3 V		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	.000035 ms	16777216 bit	3 V				.012 Amp	18.41 mm	35 ns
MR2S8AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	524288 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	512KX8	512K	3 V		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	.000035 ms	4194304 bit	3 V				.012 Amp	18.41 mm	35 ns
MR2S16AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	262144 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	256KX16	256K	3 V		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	.000035 ms	4194304 bit	3 V				.012 Amp	18.41 mm	35 ns
MR4S16AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	1048576 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	1MX16	1M	3 V		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	.000035 ms	16777216 bit	3 V				.012 Amp	18.41 mm	35 ns
MR1S8AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	262144 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	256KX8	256K	3 V		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	.000035 ms	2097152 bit	3 V				.012 Amp	18.41 mm	35 ns
MR1S08ATS35C	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	262144 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	256KX8	256K	3 V		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	.035 ms	2097152 bit	3 V				.012 Amp	18.41 mm	35 ns
MR4S16ATS35C	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	1048576 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	1MX16	1M	3 V		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	.035 ms	16777216 bit	3 V				.012 Amp	18.41 mm	35 ns
MR2S08AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	524288 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	512KX8	512K	3 V		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	.035 ms	4194304 bit	3 V				.012 Amp	18.41 mm	35 ns
MR0A8AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	128KX8	128K	3 V		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	.000035 ms	1048576 bit	3 V				.012 Amp	18.41 mm	35 ns
MR1A16ATS35C	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	128KX16	128K	3 V		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	.035 ms	2097152 bit	3 V				.012 Amp	18.41 mm	35 ns
MR1S08AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	262144 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	256KX8	256K	3 V		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	.035 ms	2097152 bit	3 V				.012 Amp	18.41 mm	35 ns
MR0S16AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	65536 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	64KX16	64K	3 V		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	.000035 ms	1048576 bit	3 V				.012 Amp	18.41 mm	35 ns

MRAMs

MRAM, or Magnetoresistive Random-Access Memory, is a type of non-volatile memory technology that uses the magnetic properties of materials to store data. MRAM combines the benefits of both traditional RAM (Random-Access Memory) and non-volatile memory technologies. Here are some key characteristics and features of MRAM:

Non-Volatile: MRAM is non-volatile, meaning it retains data even when the power is turned off. This is in contrast to traditional DRAM, which is volatile and loses data when powered down.

High Speed: MRAM offers fast read and write speeds, similar to traditional SRAM (Static Random-Access Memory). This makes it suitable for applications that require high-speed data access.

Endurance: MRAM has a high endurance, which means it can withstand a large number of write cycles without degradation. This durability is important for applications that involve frequent data updates.

Low Power Consumption: MRAM typically consumes less power compared to some other non-volatile memory technologies like Flash memory. This makes it energy-efficient and suitable for battery-powered devices.

Bit-Addressable: MRAM is bit-addressable, allowing for precise read and write operations at the individual bit level. This granularity is useful in applications where fine data control is required.

Durability: MRAM is known for its robustness and resistance to environmental factors such as radiation and extreme temperatures. This makes it suitable for applications in harsh environments, including aerospace and automotive industries.

Scalability: MRAM technology has been evolving, and efforts are ongoing to increase storage capacity while maintaining its favorable characteristics.

MRAM is used in embedded systems, IoT devices, data storage, and more, where its combination of non-volatility, speed, and endurance makes it beneficial.