MRAMs

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MR1S8AVYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	165 mA	262144 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	105 Cel	256KX8	256K	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	2097152 bit	3 V			.012 Amp	18.41 mm	35 ns
MR1S8ACYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	165 mA	262144 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	85 Cel	256KX8	256K	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	2097152 bit	3 V			.012 Amp	18.41 mm	35 ns
MR2S16AVYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	165 mA	262144 words	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	105 Cel	256KX16	256K	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	4194304 bit	3 V			.012 Amp	18.41 mm	35 ns
MR1A08ATS35C	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	155 mA	262144 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	70 Cel	256KX8	256K	3 V	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	2097152 bit	3 V			.012 Amp	18.41 mm	35 ns
MR0S08AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	131072 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	70 Cel	128KX8	128K	3 V	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	1048576 bit	3 V			.012 Amp	18.41 mm	35 ns
MR0A08ATS35C	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	70 Cel	128KX8	128K	3 V	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	1048576 bit	3 V			.012 Amp	18.41 mm	35 ns
MR4S8AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	2097152 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	70 Cel	2MX8	2M	3 V	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	16777216 bit	3 V			.012 Amp	18.41 mm	35 ns
MR2S8AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	524288 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	70 Cel	512KX8	512K	3 V	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	4194304 bit	3 V			.012 Amp	18.41 mm	35 ns
MR0A8AVYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	165 mA	131072 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	105 Cel	128KX8	128K	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	1048576 bit	3 V			.012 Amp	18.41 mm	35 ns
MR2S16AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	262144 words	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	70 Cel	256KX16	256K	3 V	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	4194304 bit	3 V			.012 Amp	18.41 mm	35 ns
MR2S8AVYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	165 mA	524288 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	105 Cel	512KX8	512K	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	4194304 bit	3 V			.012 Amp	18.41 mm	35 ns
MR4S8AVYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	165 mA	2097152 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	105 Cel	2MX8	2M	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	16777216 bit	3 V			.012 Amp	18.41 mm	35 ns
MR4S16AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	1048576 words	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	70 Cel	1MX16	1M	3 V	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	16777216 bit	3 V			.012 Amp	18.41 mm	35 ns
MR4S8ACYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	165 mA	2097152 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	85 Cel	2MX8	2M	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	16777216 bit	3 V			.012 Amp	18.41 mm	35 ns
MR0S16AVYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	165 mA	65536 words	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	105 Cel	64KX16	64K	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	1048576 bit	3 V			.012 Amp	18.41 mm	35 ns
MR1S16AVYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	165 mA	131072 words	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	105 Cel	128KX16	128K	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	2097152 bit	3 V			.012 Amp	18.41 mm	35 ns
MR1S8AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	262144 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	70 Cel	256KX8	256K	3 V	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	2097152 bit	3 V			.012 Amp	18.41 mm	35 ns
MR4S08AVYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	165 mA	2097152 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	105 Cel	2MX8	2M	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	16777216 bit	3 V			.012 Amp	18.41 mm	35 ns
MR2S08ACYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	165 mA	524288 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	85 Cel	512KX8	512K	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	4194304 bit	3 V			.012 Amp	18.41 mm	35 ns
MR1S08ATS35C	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	262144 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	70 Cel	256KX8	256K	3 V	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	2097152 bit	3 V			.012 Amp	18.41 mm	35 ns
MR4S16ATS35C	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	1048576 words	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	70 Cel	1MX16	1M	3 V	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	16777216 bit	3 V			.012 Amp	18.41 mm	35 ns
MR1S16ACYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	165 mA	131072 words	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	85 Cel	128KX16	128K	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	2097152 bit	3 V			.012 Amp	18.41 mm	35 ns
MR0A08AVYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	165 mA	131072 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	105 Cel	128KX8	128K	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	1048576 bit	3 V			.012 Amp	18.41 mm	35 ns
MR2S08AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	524288 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	70 Cel	512KX8	512K	3 V	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	4194304 bit	3 V			.012 Amp	18.41 mm	35 ns
MR0S08AVYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	165 mA	131072 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	105 Cel	128KX8	128K	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	1048576 bit	3 V			.012 Amp	18.41 mm	35 ns
MR1A08AVYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	165 mA	262144 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	105 Cel	256KX8	256K	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	2097152 bit	3 V			.012 Amp	18.41 mm	35 ns
MR0A8AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	70 Cel	128KX8	128K	3 V	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	1048576 bit	3 V			.012 Amp	18.41 mm	35 ns
MR4S16ACYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	165 mA	1048576 words	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	85 Cel	1MX16	1M	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	16777216 bit	3 V			.012 Amp	18.41 mm	35 ns
MR0S08ACYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	165 mA	131072 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	85 Cel	128KX8	128K	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	1048576 bit	3 V			.012 Amp	18.41 mm	35 ns
MR1A16ATS35C	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	70 Cel	128KX16	128K	3 V	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	2097152 bit	3 V			.012 Amp	18.41 mm	35 ns
MR4S16AVYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	165 mA	1048576 words	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	105 Cel	1MX16	1M	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	16777216 bit	3 V			.012 Amp	18.41 mm	35 ns
MR1S08AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	262144 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	70 Cel	256KX8	256K	3 V	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	2097152 bit	3 V			.012 Amp	18.41 mm	35 ns
MR0S8ACYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	165 mA	131072 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	85 Cel	128KX8	128K	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	1048576 bit	3 V			.012 Amp	18.41 mm	35 ns
MR1S08ACYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	165 mA	262144 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	85 Cel	256KX8	256K	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	2097152 bit	3 V			.012 Amp	18.41 mm	35 ns
MR0S16AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	65536 words	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	70 Cel	64KX16	64K	3 V	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	1048576 bit	3 V			.012 Amp	18.41 mm	35 ns
MR0A08ACYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	165 mA	131072 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	85 Cel	128KX8	128K	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	1048576 bit	3 V			.012 Amp	18.41 mm	35 ns
MR0S8AVYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	165 mA	131072 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	105 Cel	128KX8	128K	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	1048576 bit	3 V			.012 Amp	18.41 mm	35 ns
MR1A8ACYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	165 mA	262144 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	85 Cel	256KX8	256K	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	2097152 bit	3 V			.012 Amp	18.41 mm	35 ns
MR1A8AVYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	165 mA	262144 words	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	20	.8 mm	105 Cel	256KX8	256K	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	2097152 bit	3 V			.012 Amp	18.41 mm	35 ns
M3004316035NX0PTBY	Renesas Electronics	MRAM		54	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	10	.8 mm	105 Cel	256KX16	256K	2.7 V	-40 Cel	TIN	DUAL	R-PDSO-G54	3	3.6 V	1.194 mm	100000000000000 Write/Erase Cycles	10.16 mm			4194304 bit	2.7 V	e3	260	.0035 Amp	22.225 mm	35 ns
M3004316035NX0IBCR	Renesas Electronics	MRAM		48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	10	.75 mm	85 Cel	256KX16	256K	2.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm	100000000000000 Write/Erase Cycles	10 mm			4194304 bit	2.7 V	e1	260	.0035 Amp	10 mm	35 ns
M3008316045NX0ITBR	Renesas Electronics	MRAM		54	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	10	.8 mm	85 Cel	512KX16	512K	2.7 V	-40 Cel	TIN	DUAL	R-PDSO-G54	3	3.6 V	1.194 mm	100000000000000 Write/Erase Cycles	10.16 mm			8388608 bit	2.7 V	e3	260	.0035 Amp	22.225 mm	45 ns
M3016316035NX0IBCR	Renesas Electronics	MRAM		48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	10	.75 mm	85 Cel	1MX16	1M	2.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm	100000000000000 Write/Erase Cycles	10 mm			16777216 bit	2.7 V	e1	260	.0035 Amp	10 mm	35 ns
M3004316035NX0ITBY	Renesas Electronics	MRAM		54	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	10	.8 mm	85 Cel	256KX16	256K	2.7 V	-40 Cel	TIN	DUAL	R-PDSO-G54	3	3.6 V	1.194 mm	100000000000000 Write/Erase Cycles	10.16 mm			4194304 bit	2.7 V	e3	260	.0035 Amp	22.225 mm	35 ns
M3008316035NX0ITBY	Renesas Electronics	MRAM		54	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	10	.8 mm	85 Cel	512KX16	512K	2.7 V	-40 Cel	TIN	DUAL	R-PDSO-G54	3	3.6 V	1.194 mm	100000000000000 Write/Erase Cycles	10.16 mm			8388608 bit	2.7 V	e3	260	.0035 Amp	22.225 mm	35 ns
M3004316045NX0PTBR	Renesas Electronics	MRAM		54	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	10	.8 mm	105 Cel	256KX16	256K	2.7 V	-40 Cel	TIN	DUAL	R-PDSO-G54	3	3.6 V	1.194 mm	100000000000000 Write/Erase Cycles	10.16 mm			4194304 bit	2.7 V	e3	260	.0035 Amp	22.225 mm	45 ns
M3004316045NX0PTAY	Renesas Electronics	MRAM		44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	10	.8 mm	105 Cel	256KX16	256K	2.7 V	-40 Cel	TIN	DUAL	R-PDSO-G44	3	3.6 V	1.2 mm	100000000000000 Write/Erase Cycles	10.16 mm			4194304 bit	2.7 V	e3	260	.0035 Amp	18.41 mm	45 ns
M3004316035NX0ITAY	Renesas Electronics	MRAM		44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	10	.8 mm	85 Cel	256KX16	256K	2.7 V	-40 Cel	TIN	DUAL	R-PDSO-G44	3	3.6 V	1.2 mm	100000000000000 Write/Erase Cycles	10.16 mm			4194304 bit	2.7 V	e3	260	.0035 Amp	18.41 mm	35 ns

MRAMs

MRAM, or Magnetoresistive Random-Access Memory, is a type of non-volatile memory technology that uses the magnetic properties of materials to store data. MRAM combines the benefits of both traditional RAM (Random-Access Memory) and non-volatile memory technologies. Here are some key characteristics and features of MRAM:

Non-Volatile: MRAM is non-volatile, meaning it retains data even when the power is turned off. This is in contrast to traditional DRAM, which is volatile and loses data when powered down.

High Speed: MRAM offers fast read and write speeds, similar to traditional SRAM (Static Random-Access Memory). This makes it suitable for applications that require high-speed data access.

Endurance: MRAM has a high endurance, which means it can withstand a large number of write cycles without degradation. This durability is important for applications that involve frequent data updates.

Low Power Consumption: MRAM typically consumes less power compared to some other non-volatile memory technologies like Flash memory. This makes it energy-efficient and suitable for battery-powered devices.

Bit-Addressable: MRAM is bit-addressable, allowing for precise read and write operations at the individual bit level. This granularity is useful in applications where fine data control is required.

Durability: MRAM is known for its robustness and resistance to environmental factors such as radiation and extreme temperatures. This makes it suitable for applications in harsh environments, including aerospace and automotive industries.

Scalability: MRAM technology has been evolving, and efforts are ongoing to increase storage capacity while maintaining its favorable characteristics.

MRAM is used in embedded systems, IoT devices, data storage, and more, where its combination of non-volatility, speed, and endurance makes it beneficial.