105 Other Function Memory ICs 25

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
M39P0R9070E0ZADE	STMicroelectronics	MEMORY CIRCUIT	OTHER	105	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	33554432 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B105	1.95 V	1.2 mm	9 mm	Not Qualified	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE ALSO POSSIBLE		40	260		11 mm
M39P0R9070E0ZAD	STMicroelectronics	MEMORY CIRCUIT	OTHER	105	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	33554432 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX16	32M	-25 Cel	TIN LEAD	BOTTOM	R-PBGA-B105	1.95 V	1.2 mm	9 mm	Not Qualified	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE ALSO POSSIBLE	e0				11 mm
M39P0R9070E0ZADF	STMicroelectronics	MEMORY CIRCUIT	OTHER	105	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	33554432 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B105	1.95 V	1.2 mm	9 mm	Not Qualified	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE ALSO POSSIBLE		40	260		11 mm
M39P0R9080E0ZADE	Micron Technology	MEMORY CIRCUIT	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL			1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA105,9X12,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B105				Not Qualified									96 ns
PF38F4060M0Y0B0	Micron Technology	MEMORY CIRCUIT		105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA105,9X12,32	Other Memory ICs	.8 mm						BOTTOM	R-PBGA-B105				Not Qualified							.00013 Amp		96 ns
PF38F6060M0Y1B0	Micron Technology	MEMORY CIRCUIT		105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA105,9X12,32	Other Memory ICs	.8 mm						BOTTOM	R-PBGA-B105				Not Qualified							.000185 Amp		96 ns
PF38F6060M0Y0B0	Micron Technology	MEMORY CIRCUIT		105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA105,9X12,32	Other Memory ICs	.8 mm						BOTTOM	R-PBGA-B105				Not Qualified							.000185 Amp		96 ns
PF38F4070M0Y1B0	Micron Technology	MEMORY CIRCUIT		105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA105,9X12,32	Other Memory ICs	.8 mm						BOTTOM	R-PBGA-B105				Not Qualified							.00013 Amp		96 ns
PF38F5060M0Y1B0	Micron Technology	MEMORY CIRCUIT		105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA105,9X12,32	Other Memory ICs	.8 mm						BOTTOM	R-PBGA-B105				Not Qualified							.00016 Amp		96 ns
PF38F5060M0Y0B0	Micron Technology	MEMORY CIRCUIT	OTHER	105	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA105,9X12,32	Other Memory ICs	.8 mm	85 Cel	32MX16	32M	-30 Cel		BOTTOM	R-PBGA-B105	2 V	1.2 mm	9 mm	Not Qualified	536870912 bit	1.7 V	PSEUDO SRAM IS ORGANIZED AS 8M X 16		30	260	.00016 Amp	11 mm	96 ns
M39P0R9080E0ZAD	Micron Technology	MEMORY CIRCUIT	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL			1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA105,9X12,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B105				Not Qualified									96 ns
PF38F6070M0Y1B0	Micron Technology	MEMORY CIRCUIT		105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA105,9X12,32	Other Memory ICs	.8 mm						BOTTOM	R-PBGA-B105				Not Qualified							.000185 Amp		96 ns
PF38F6070M0Y0BE	Micron Technology	MEMORY CIRCUIT		105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA105,9X12,32	Other Memory ICs	.8 mm						BOTTOM	R-PBGA-B105				Not Qualified							.000185 Amp		96 ns
PF38F6070M0Y0B0	Micron Technology	MEMORY CIRCUIT		105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA105,9X12,32	Other Memory ICs	.8 mm						BOTTOM	R-PBGA-B105				Not Qualified							.000185 Amp		96 ns
M39P0R8070E2ZADF	Micron Technology	MEMORY CIRCUIT	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL			1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA105,9X12,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B105				Not Qualified									96 ns
PF38F5070M0Y0B0	Micron Technology	MEMORY CIRCUIT	OTHER	105	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA105,9X12,32	Other Memory ICs	.8 mm	85 Cel	32MX16	32M	-30 Cel		BOTTOM	R-PBGA-B105	2 V	1.2 mm	9 mm	Not Qualified	536870912 bit	1.7 V	PSEUDO SRAM IS ORGANIZED AS 16M X 16		30	260	.00016 Amp	11 mm	96 ns
PF38F4070M0Y0B0	Micron Technology	MEMORY CIRCUIT		105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA105,9X12,32	Other Memory ICs	.8 mm						BOTTOM	R-PBGA-B105				Not Qualified							.00013 Amp		96 ns
M39P0R9080E0ZADF	Micron Technology	MEMORY CIRCUIT	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL			1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA105,9X12,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B105				Not Qualified									96 ns
PF38F5070M0Y1B0	Micron Technology	MEMORY CIRCUIT		105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA105,9X12,32	Other Memory ICs	.8 mm						BOTTOM	R-PBGA-B105				Not Qualified							.00016 Amp		96 ns
PF38F3060M0Y0B0	Micron Technology	MEMORY CIRCUIT		105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA105,9X12,32	Other Memory ICs	.8 mm						BOTTOM	R-PBGA-B105				Not Qualified							.000115 Amp		96 ns
M39P0R8070E2ZADE	Micron Technology	MEMORY CIRCUIT	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL			1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA105,9X12,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B105				Not Qualified									96 ns
PF38F3060M0Y1B0	Micron Technology	MEMORY CIRCUIT		105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA105,9X12,32	Other Memory ICs	.8 mm						BOTTOM	R-PBGA-B105				Not Qualified							.000115 Amp		96 ns
M39P0R9070E2ZADF	Micron Technology	MEMORY CIRCUIT	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL			1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA105,9X12,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B105				Not Qualified									96 ns
M39P0R9070E2ZADE	Micron Technology	MEMORY CIRCUIT	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL			1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA105,9X12,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B105				Not Qualified									96 ns
PF38F4060M0Y1B0	Micron Technology	MEMORY CIRCUIT		105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA105,9X12,32	Other Memory ICs	.8 mm						BOTTOM	R-PBGA-B105				Not Qualified							.00013 Amp		96 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.