115 Other Function Memory ICs 11

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
S75WS256PEFJF5VS2	Infineon Technologies	MEMORY CIRCUIT	OTHER	115	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B115	3	1.95 V	1.4 mm	9 mm	Not Qualified	268435456 bit	1.7 V		e1	40	260		12 mm
S75WS256PEFJF5VS3	Infineon Technologies	MEMORY CIRCUIT	OTHER	115	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B115	3	1.95 V	1.4 mm	9 mm	Not Qualified	268435456 bit	1.7 V		e1	40	260		12 mm
S75WS256PEFJF5VS0	Infineon Technologies	MEMORY CIRCUIT	OTHER	115	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B115	3	1.95 V	1.4 mm	9 mm	Not Qualified	268435456 bit	1.7 V		e1	40	260		12 mm
KBF080800M-D408	Samsung	MEMORY CIRCUIT	OTHER	115	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		100 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA115,10X14,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B115					Not Qualified							.00003 Amp		88.5 ns
KBF080800M-D4080	Samsung	MEMORY CIRCUIT	OTHER	115	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B115	2	1.9 V	1.4 mm	8 mm	Not Qualified	134217728 bit	1.7 V	UTRAM IS ORGANIZED AS 4M X 16; UTRAM OPERATES AT 2.5V TO 2.7V SUPPLY	e1				12 mm
K5L5628JBM-DH18	Samsung	MEMORY CIRCUIT	OTHER	115	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		70 mA			FLASH+PSRAM	1.8,2.5		GRID ARRAY, FINE PITCH	BGA115,10X14,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B115					Not Qualified							.00007 Amp		88.5 ns
KBF090800M-D4080	Samsung	MEMORY CIRCUIT	OTHER	115	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B115		1.9 V	1.4 mm	8 mm	Not Qualified	134217728 bit	1.7 V	UTRAM IS ORGANIZED AS 4M X 16; UTRAM OPERATES AT 2.5V TO 2.7V SUPPLY					12 mm
K5L5628JTM-DH180	Samsung	MEMORY CIRCUIT	OTHER	115	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-30 Cel		BOTTOM	R-PBGA-B115		1.95 V	1.4 mm	8 mm	Not Qualified	268435456 bit	1.7 V						12 mm
K5L5628JBM-DH180	Samsung	MEMORY CIRCUIT	OTHER	115	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-30 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B115	2	1.95 V	1.4 mm	8 mm	Not Qualified	268435456 bit	1.7 V		e1				12 mm
K5L5628JTM-DH18	Samsung	MEMORY CIRCUIT	OTHER	115	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		70 mA			FLASH+PSRAM	1.8,2.5		GRID ARRAY, FINE PITCH	BGA115,10X14,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B115					Not Qualified							.00007 Amp		88.5 ns
KBF090800M-D408	Samsung	MEMORY CIRCUIT	OTHER	115	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		100 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA115,10X14,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B115					Not Qualified							.00003 Amp		88.5 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.