127 Other Function Memory ICs 21

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Standby Current	Length	Maximum Access Time
UPD46128953F1-E15X-EB1	Renesas Electronics		OTHER	127	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL		55 mA	4194304 words	COMMON	1.8		1.8	32	GRID ARRAY, FINE PITCH	BGA127,14X14,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	4MX32	4M	-25 Cel	BOTTOM	S-PBGA-B127			66 MHz		Not Qualified	134217728 bit
UPD46128953F1-E12X-EB1	Renesas Electronics		OTHER	127	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL		60 mA	4194304 words	COMMON	1.8		1.8	32	GRID ARRAY, FINE PITCH	BGA127,14X14,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	4MX32	4M	-25 Cel	BOTTOM	S-PBGA-B127			83 MHz		Not Qualified	134217728 bit
KAL00B00BM-FGXV	Samsung	MEMORY CIRCUIT	OTHER	127	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		15 mA			1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA127,12X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel	BOTTOM	R-PBGA-B127					Not Qualified				.00005 Amp
KAA00B209M-TGQX	Samsung	MEMORY CIRCUIT	OTHER	127	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA				FLASH+PSRAM+SRAM	1.8,3		GRID ARRAY, FINE PITCH	BGA127,12X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel	BOTTOM	R-PBGA-B127					Not Qualified				.00001 Amp		90 ns
KAA00B209M-TGQV	Samsung	MEMORY CIRCUIT	OTHER	127	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA				FLASH+PSRAM+SRAM	1.8,3		GRID ARRAY, FINE PITCH	BGA127,12X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel	BOTTOM	R-PBGA-B127					Not Qualified				.00001 Amp		90 ns
KAL00B00BM-FGXX	Samsung	MEMORY CIRCUIT	OTHER	127	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		15 mA			1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA127,12X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel	BOTTOM	R-PBGA-B127					Not Qualified				.00005 Amp
KAL00B00BM-FGXX0	Samsung	MEMORY CIRCUIT	OTHER	127	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel	BOTTOM	R-PBGA-B127	1.95 V	1.4 mm		10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 4M X 8 X 4 BANKS; NAND FLASH SUPPLY 1.7 V TO 1.95 V		12 mm
KAA00B606A-TGPX0	Samsung	MEMORY CIRCUIT	OTHER	127	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel	BOTTOM	R-PBGA-B127	1.95 V	1.4 mm		10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 2M X 16 X 4 BANKS; UTRAM IS ORGANIZED AS 4M X 16		12 mm
KAA00B209M-TGQX0	Samsung	MEMORY CIRCUIT	OTHER	127	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel	BOTTOM	R-PBGA-B127	1.95 V	1.4 mm		10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 2M X 16 X 4 BANKS; UTRAM IS ORGANIZED AS 2M X 16		12 mm
KAL00B00BM-FGXV0	Samsung	MEMORY CIRCUIT	OTHER	127	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel	BOTTOM	R-PBGA-B127	1.95 V	1.4 mm		10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 4M X 8 X 4 BANKS; NAND FLASH SUPPLY 1.7 V TO 1.95 V		12 mm
KAL00B00BM-FGVX	Samsung	MEMORY CIRCUIT	OTHER	127	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		15 mA			1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA127,12X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel	BOTTOM	R-PBGA-B127					Not Qualified				.00005 Amp
KAA00B606A-TGPV0	Samsung	MEMORY CIRCUIT	OTHER	127	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel	BOTTOM	R-PBGA-B127	1.95 V	1.4 mm		10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 2M X 16 X 4 BANKS; UTRAM IS ORGANIZED AS 4M X 16		12 mm
KAA00B209M-TGSX0	Samsung	MEMORY CIRCUIT	OTHER	127	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel	BOTTOM	R-PBGA-B127	1.95 V	1.4 mm		10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 2M X 16 X 4 BANKS; UTRAM IS ORGANIZED AS 2M X 16		12 mm
KAA00B606A-TGPV	Samsung	MEMORY CIRCUIT	OTHER	127	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA				FLASH+PSRAM+SRAM	1.8,3		GRID ARRAY, FINE PITCH	BGA127,12X13,32	Other Memory ICs	.8 mm	85 Cel				-20 Cel	BOTTOM	R-PBGA-B127					Not Qualified				.00002 Amp		85 ns
KAA00B209M-TGSV0	Samsung	MEMORY CIRCUIT	OTHER	127	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel	BOTTOM	R-PBGA-B127	1.95 V	1.4 mm		10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 2M X 16 X 4 BANKS; UTRAM IS ORGANIZED AS 2M X 16		12 mm
KAA00B209M-TGQV0	Samsung	MEMORY CIRCUIT	OTHER	127	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel	BOTTOM	R-PBGA-B127	1.95 V	1.4 mm		10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 2M X 16 X 4 BANKS; UTRAM IS ORGANIZED AS 2M X 16		12 mm
KAA00B209M-TGSX	Samsung	MEMORY CIRCUIT	OTHER	127	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA				FLASH+PSRAM+SRAM	1.8,3		GRID ARRAY, FINE PITCH	BGA127,12X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel	BOTTOM	R-PBGA-B127					Not Qualified				.00001 Amp		100 ns
KAL00B00BM-FGVV0	Samsung	MEMORY CIRCUIT	OTHER	127	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel	BOTTOM	R-PBGA-B127	1.95 V	1.4 mm		10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 4M X 8 X 4 BANKS; NAND FLASH SUPPLY 1.7 V TO 1.95 V		12 mm
KAL00B00BM-FGVX0	Samsung	MEMORY CIRCUIT	OTHER	127	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel	BOTTOM	R-PBGA-B127	1.95 V	1.4 mm		10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 4M X 8 X 4 BANKS; NAND FLASH SUPPLY 1.7 V TO 1.95 V		12 mm
KAA00B209M-TGSV	Samsung	MEMORY CIRCUIT	OTHER	127	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA				FLASH+PSRAM+SRAM	1.8,3		GRID ARRAY, FINE PITCH	BGA127,12X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel	BOTTOM	R-PBGA-B127					Not Qualified				.00001 Amp		100 ns
KAL00B00BM-FGVV	Samsung	MEMORY CIRCUIT	OTHER	127	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		15 mA			1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA127,12X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel	BOTTOM	R-PBGA-B127					Not Qualified				.00005 Amp

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.