16 Other Function Memory ICs 101

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
SN54LS189J	Texas Instruments	MEMORY CIRCUIT	MILITARY	16	DIP	RECTANGULAR		NO	1	TTL	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words	5		4	IN-LINE		SRAMs		125 Cel	3-STATE	16X4	16	-55 Cel		DUAL	R-XDIP-T16		5.5 V			Not Qualified	64 bit	4.5 V							90 ns
SN74LS170D3	Texas Instruments		COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		TTL	GULL WING					5	5		SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	70 Cel				0 Cel		DUAL	R-PDSO-G16
DS1653S	Analog Devices	MEMORY CIRCUIT	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING					5	5		SMALL OUTLINE	SOP16,.4	Other Memory ICs	1.27 mm	70 Cel				0 Cel	TIN LEAD	DUAL	R-PDSO-G16					Not Qualified				e0
DS1653	Analog Devices	MEMORY CIRCUIT	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE					5	5		IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	70 Cel				0 Cel	TIN LEAD	DUAL	R-PDIP-T16					Not Qualified				e0
DS1250S	Analog Devices		COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			10 mA		5	5		SMALL OUTLINE	SOP16,.4	Other Memory ICs	1.27 mm	70 Cel				0 Cel	TIN LEAD	DUAL	R-PDSO-G16					Not Qualified				e0
IMSB433-16	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	16		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE		ASYNCHRONOUS		16777216 words	5		8	MICROELECTRONIC ASSEMBLY				50 Cel		16MX8	16M	0 Cel		UNSPECIFIED	R-XXMA-T16		5.25 V			Not Qualified	134217728 bit	4.75 V	SRAM IS CONFIGURED AS 64 K X 8
IMSB428-12	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	16		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		2097152 words	5		8	MICROELECTRONIC ASSEMBLY				50 Cel		2MX8	2M	0 Cel		UNSPECIFIED	R-XXMA-T16		5.25 V			Not Qualified	16777216 bit	4.75 V
IMSB401-8	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	16		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		32768 words	5		8	MICROELECTRONIC ASSEMBLY				50 Cel		32KX8	32K	0 Cel		DUAL	R-XDMA-T16		5.25 V			Not Qualified	262144 bit	4.75 V
IMSB411-3	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	16		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		1048576 words	5		8	MICROELECTRONIC ASSEMBLY				50 Cel		1MX8	1M	0 Cel		DUAL	R-XDMA-T16		5.25 V			Not Qualified	8388608 bit	4.75 V
IMSB411-8	STMicroelectronics	MEMORY CIRCUIT		16		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		1048576 words			8	MICROELECTRONIC ASSEMBLY						1MX8	1M			DUAL	R-XDMA-T16					Not Qualified	8388608 bit
IMSB410-11	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	16		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		163840 words	5		8	MICROELECTRONIC ASSEMBLY				50 Cel		160KX8	160K	0 Cel		DUAL	R-XDMA-T16		5.25 V			Not Qualified	1310720 bit	4.75 V
IMSB416-10	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	16		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		65536 words	5		8	MICROELECTRONIC ASSEMBLY				50 Cel		64KX8	64K	0 Cel		DUAL	R-XDMA-T16		5.25 V			Not Qualified	524288 bit	4.75 V
IMSB411-7	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	16		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		1048576 words	5		8	MICROELECTRONIC ASSEMBLY				50 Cel		1MX8	1M	0 Cel		DUAL	R-XDMA-T16		5.25 V			Not Qualified	8388608 bit	4.75 V
IMSB427-5	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	16		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		8388608 words	5		8	MICROELECTRONIC ASSEMBLY				50 Cel		8MX8	8M	0 Cel		UNSPECIFIED	R-XXMA-T16		5.25 V			Not Qualified	67108864 bit	4.75 V
T54LS670D2	STMicroelectronics		MILITARY	16	DIP	RECTANGULAR	CERAMIC	NO		TTL	THROUGH-HOLE					5	5		IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel				-55 Cel		DUAL	R-XDIP-T16					Not Qualified
IMSB404-3	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	16		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		2097152 words	5		8	MICROELECTRONIC ASSEMBLY				50 Cel		2MX8	2M	0 Cel		UNSPECIFIED	R-XXMA-T16		5.25 V			Not Qualified	16777216 bit	4.75 V	SRAM IS CONFIGURED AS 32 K X 8
IMSB404-8	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	16		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		2097152 words	5		8	MICROELECTRONIC ASSEMBLY				50 Cel		2MX8	2M	0 Cel		UNSPECIFIED	R-XXMA-T16		5.25 V			Not Qualified	16777216 bit	4.75 V	SRAM IS CONFIGURED AS 32 K X 8
IMSB417-5	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	16		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		4194304 words	5		8	MICROELECTRONIC ASSEMBLY				50 Cel		4MX8	4M	0 Cel		UNSPECIFIED	R-XXMA-T16		5.25 V			Not Qualified	33554432 bit	4.75 V	SRAM IS CONFIGURED AS 64 K X 8
IMSB401-5	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	16		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		32768 words	5		8	MICROELECTRONIC ASSEMBLY				50 Cel		32KX8	32K	0 Cel		DUAL	R-XDMA-T16		5.25 V			Not Qualified	262144 bit	4.75 V
IMSB411-5	STMicroelectronics	MEMORY CIRCUIT		16		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		1048576 words			8	MICROELECTRONIC ASSEMBLY						1MX8	1M			DUAL	R-XDMA-T16					Not Qualified	8388608 bit
IMSB401-3	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	16		RECTANGULAR	UNSPECIFIED	NO	1	MOS	THROUGH-HOLE		ASYNCHRONOUS		32768 words	5		32	MICROELECTRONIC ASSEMBLY				50 Cel		32KX32	32K	0 Cel		DUAL	R-XDMA-T16		5.25 V			Not Qualified	1048576 bit	4.75 V
IMSB426-5	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	16		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		4194304 words	5		8	MICROELECTRONIC ASSEMBLY				50 Cel		4MX8	4M	0 Cel		UNSPECIFIED	R-XXMA-T16		5.25 V			Not Qualified	33554432 bit	4.75 V
IMSB404-5	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	16		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		2097152 words	5		8	MICROELECTRONIC ASSEMBLY				50 Cel		2MX8	2M	0 Cel		UNSPECIFIED	R-XXMA-T16		5.25 V			Not Qualified	16777216 bit	4.75 V	SRAM IS CONFIGURED AS 32 K X 8
PTN3500DH	NXP Semiconductors	MEMORY CIRCUIT	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		256 words	3.3		8	SMALL OUTLINE				85 Cel		256X8	256	-40 Cel		DUAL	R-PDSO-G16		3.6 V			Not Qualified	2048 bit	2.5 V
PTN3500DH-T	NXP Semiconductors	MEMORY CIRCUIT	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		256 words	3.3		8	SMALL OUTLINE				85 Cel		256X8	256	-40 Cel		DUAL	R-PDSO-G16		3.6 V			Not Qualified	2048 bit	2.5 V
PTN3500D	NXP Semiconductors	MEMORY CIRCUIT	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		256 words	3.3		8	SMALL OUTLINE				85 Cel		256X8	256	-40 Cel		DUAL	R-PDSO-G16		3.6 V			Not Qualified	2048 bit	2.5 V
PTN3500D-T	NXP Semiconductors	MEMORY CIRCUIT	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		256 words	3.3		8	SMALL OUTLINE				85 Cel		256X8	256	-40 Cel		DUAL	R-PDSO-G16		3.6 V			Not Qualified	2048 bit	2.5 V
DS1205S	Maxim Integrated	MEMORY CIRCUIT	COMMERCIAL	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	6 mA	512 words	5	5	16	SMALL OUTLINE, SHRINK PITCH	SOP16,.4	Other Memory ICs	.635 mm	70 Cel		512X16	512	0 Cel	TIN LEAD	DUAL	R-PDSO-G16		5.5 V	1.75 mm	3.9 mm	Not Qualified	8192 bit	4.5 V		e0				4.89 mm
DS1205SN	Maxim Integrated	MEMORY CIRCUIT	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		1664 words	5		1	SMALL OUTLINE			1.27 mm	70 Cel		1664X1	1664	0 Cel	TIN LEAD	DUAL	R-PDSO-G16	1	5.5 V	2.65 mm	7.5 mm	Not Qualified	1664 bit	4.5 V		e0				10.3 mm
DS2436S	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING			1.5 mA			2.7/10		SMALL OUTLINE, SHRINK PITCH	SSOP16,.3	Other Memory ICs	.65 mm	85 Cel				-40 Cel	TIN LEAD	DUAL	R-PDSO-G16			1.99 mm	5.29 mm	Not Qualified				e0				6.2 mm
DS2434S/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING			1.5 mA			3.6/6.4		SMALL OUTLINE, SHRINK PITCH	SSOP16,.3	Other Memory ICs	.65 mm	85 Cel				-40 Cel		DUAL	R-PDSO-G16			1.99 mm	5.29 mm	Not Qualified					NOT SPECIFIED	NOT SPECIFIED	.000003 Amp	6.2 mm
DS2434S	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING			1.5 mA			3.6/6.4		SMALL OUTLINE, SHRINK PITCH	SSOP16,.3	Other Memory ICs	.65 mm	85 Cel				-40 Cel	TIN LEAD	DUAL	R-PDSO-G16	1		1.99 mm	5.29 mm	Not Qualified				e0				6.2 mm
DS2435S	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS	1.5 mA	32 words	3.6	3.6/6.4	8	SMALL OUTLINE, SHRINK PITCH	SSOP16,.3	Other Memory ICs	.65 mm	85 Cel		32X8	32	-40 Cel	TIN LEAD	DUAL	R-PDSO-G16		6.4 V	1.99 mm	5.29 mm	Not Qualified	256 bit	2.5 V		e0				6.2 mm
DS2435S/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		32 words	3.6		8	SMALL OUTLINE, SHRINK PITCH			.65 mm	85 Cel		32X8	32	-40 Cel	TIN LEAD	DUAL	R-PDSO-G16		6.4 V	1.99 mm	5.29 mm	Not Qualified	256 bit	2.5 V		e0				6.2 mm
TC74HC670AF(EL,F)	Toshiba		INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING						2/6		SMALL OUTLINE	SOP16,.3	Other Memory ICs	1.27 mm	85 Cel				-40 Cel		DUAL	R-PDSO-G16					Not Qualified
TC74HC670AF(F)	Toshiba		INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING						2/6		SMALL OUTLINE	SOP16,.3	Other Memory ICs	1.27 mm	85 Cel				-40 Cel		DUAL	R-PDSO-G16					Not Qualified
TC74HC670AP(F)	Toshiba		INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE						2/6		IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	85 Cel				-40 Cel		DUAL	R-PDIP-T16					Not Qualified
TC74HC670P	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		ASYNCHRONOUS		4 words			4	IN-LINE			2.54 mm	85 Cel		4X4	4	-40 Cel	TIN LEAD	DUAL	R-PDIP-T16		6 V	5 mm	7.62 mm	Not Qualified	16 bit	2 V		e0				19.304 mm
HD74HC670RP-ER	Renesas Electronics	MEMORY CIRCUIT	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		4 words	4.5		4	SMALL OUTLINE			1.27 mm	85 Cel		4X4	4	-40 Cel		DUAL	R-PDSO-G16		6 V	1.75 mm	3.9 mm	Not Qualified	16 bit	2 V						9.9 mm
HD74HC670FP-ER	Renesas Electronics	MEMORY CIRCUIT	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		4 words	4.5		4	SMALL OUTLINE			1.27 mm	85 Cel		4X4	4	-40 Cel		DUAL	R-PDSO-G16		6 V	2.2 mm	5.5 mm	Not Qualified	16 bit	2 V						10.06 mm
HD74HC670T	Renesas Electronics	MEMORY CIRCUIT	INDUSTRIAL	16	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		4 words	4.5		4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	85 Cel		4X4	4	-40 Cel		DUAL	R-PDSO-G16		6 V	1.1 mm	4.4 mm	Not Qualified	16 bit	2 V						5.2 mm
KS54AHCT670J	Samsung		MILITARY	16	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE					5	5		IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel				-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16					Not Qualified				e0
KS74HCTLS670J	Samsung		INDUSTRIAL	16	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE					5	5		IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	85 Cel				-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16					Not Qualified				e0
KS74HCTLS670D	Samsung		INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING					5	5		SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	85 Cel				-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G16					Not Qualified				e0
KS74AHCT670N	Samsung		INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE					5	5		IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	85 Cel				-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T16					Not Qualified				e0
KS74AHCT670D	Samsung		INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING					5	5		SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	85 Cel				-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G16					Not Qualified				e0
KS74HCTLS670N	Samsung		INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE					5	5		IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	85 Cel				-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T16					Not Qualified				e0
KS74HCTLS670DT	Samsung		INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING					5	5		SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	85 Cel				-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G16					Not Qualified				e0

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.