4 Other Function Memory ICs 15

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish I2C Control Byte Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Interleaved Burst Length Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

DS2401Z/T&R

Maxim Integrated

MEMORY CIRCUIT

INDUSTRIAL

4

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

ASYNCHRONOUS

64 words

5

3/5

1

SMALL OUTLINE

SOT-223

Other Memory ICs

2.3 mm

85 Cel

64X1

64

-40 Cel

TIN LEAD

DUAL

R-PDSO-G4

1

6 V

1.8 mm

3.5 mm

Not Qualified

64 bit

2.8 V

e0

6.5 mm

DS2401Z+T&R

Analog Devices

MEMORY CIRCUIT

INDUSTRIAL

4

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

ASYNCHRONOUS

64 words

5

3/5

1

SMALL OUTLINE

SOT-223

Other Memory ICs

2.3 mm

85 Cel

64X1

64

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G4

1

6 V

1.8 mm

3.5 mm

Not Qualified

64 bit

2.8 V

e3

30

260

6.5 mm

DS2401Z

Maxim Integrated

MEMORY CIRCUIT

INDUSTRIAL

4

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

ASYNCHRONOUS

64 words

5

3/5

1

SMALL OUTLINE

SOT-223

Other Memory ICs

2.3 mm

85 Cel

64X1

64

-40 Cel

TIN LEAD

DUAL

R-PDSO-G4

1

6 V

1.8 mm

3.5 mm

Not Qualified

64 bit

2.8 V

e0

20

240

6.5 mm

DS2401Z+

Analog Devices

MEMORY CIRCUIT

INDUSTRIAL

4

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

ASYNCHRONOUS

64 words

5

3/5

1

SMALL OUTLINE

SOT-223

Other Memory ICs

2.3 mm

85 Cel

64X1

64

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G4

1

6 V

1.8 mm

3.5 mm

Not Qualified

64 bit

2.8 V

e3

30

260

6.5 mm

DS2502X1+U

Analog Devices

OTP ROM

INDUSTRIAL

4

PLASTIC/EPOXY

YES

128 words

COMMON

3/5

8

BGA4,2X2,37/16

Other Memory ICs

85 Cel

128X8

128

-40 Cel

TIN SILVER COPPER NICKEL

1

Not Qualified

1024 bit

e2

30

260

15000 ns

DS2411X

Maxim Integrated

MEMORY CIRCUIT

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

.1 mA

64 words

2/5

1

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA4(UNSPEC)

Other Memory ICs

85 Cel

64X1

64

-40 Cel

BOTTOM

R-PBGA-B4

1

5.25 V

.59 mm

.69 mm

Not Qualified

64 bit

1.5 V

245

.000001 Amp

1.09 mm

DS2405Z

Maxim Integrated

MEMORY CIRCUIT

INDUSTRIAL

4

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

ASYNCHRONOUS

64 words

3/5

1

SMALL OUTLINE

SOT-223

SRAMs

2.3 mm

85 Cel

64X1

64

-40 Cel

TIN LEAD

DUAL

R-PDSO-G4

1

6 V

1.8 mm

3.5 mm

Not Qualified

64 bit

2.8 V

e0

245

6.5 mm

DS2405Z+

Maxim Integrated

MEMORY CIRCUIT

INDUSTRIAL

4

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

ASYNCHRONOUS

64 words

3/5

1

SMALL OUTLINE

SOT-223

SRAMs

2.3 mm

85 Cel

64X1

64

-40 Cel

MATTE TIN

DUAL

R-PDSO-G4

1

6 V

1.8 mm

3.5 mm

Not Qualified

64 bit

2.8 V

e3

30

260

6.5 mm

DS2401X-S+T

Analog Devices

MEMORY CIRCUIT

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

64 words

5

1

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA4,2X2,28/12

.3 mm

85 Cel

64X1

64

-40 Cel

TIN SILVER COPPER NICKEL

BOTTOM

R-PBGA-B4

1

6 V

.5 mm

.678 mm

64 bit

2.8 V

e2

30

260

1.338 mm

ST25TB04K-AC6G6

STMicroelectronics

MEMORY CIRCUIT

INDUSTRIAL

4

DIE

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

4096 words

1

UNCASED CHIP

85 Cel

4KX1

4K

-40 Cel

UPPER

R-XUUC-N4

4096 bit

ST25TB04K-AC6U6

STMicroelectronics

MEMORY CIRCUIT

INDUSTRIAL

4

DIE

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

4096 words

1

UNCASED CHIP

85 Cel

4KX1

4K

-40 Cel

UPPER

R-XUUC-N4

4096 bit

DS2405Y

Maxim Integrated

MEMORY CIRCUIT

INDUSTRIAL

4

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

ASYNCHRONOUS

64 words

1

SMALL OUTLINE

2.3 mm

85 Cel

64X1

64

-40 Cel

TIN LEAD

DUAL

R-PDSO-G4

1

6 V

1.8 mm

3.5 mm

Not Qualified

64 bit

2.8 V

e0

6.5 mm

DS2401Y

Maxim Integrated

MEMORY CIRCUIT

INDUSTRIAL

4

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

ASYNCHRONOUS

64 words

3/5

1

SMALL OUTLINE

SOT-223

Other Memory ICs

2.3 mm

85 Cel

64X1

64

-40 Cel

TIN LEAD

DUAL

R-PDSO-G4

6 V

1.8 mm

3.5 mm

Not Qualified

64 bit

2.8 V

e0

6.5 mm

DS2405Z/T&R

Maxim Integrated

MEMORY CIRCUIT

INDUSTRIAL

4

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

ASYNCHRONOUS

64 words

3/5

1

SMALL OUTLINE

SOT-223

SRAMs

2.3 mm

85 Cel

64X1

64

-40 Cel

TIN LEAD

DUAL

R-PDSO-G4

1

6 V

1.8 mm

3.5 mm

Not Qualified

64 bit

2.8 V

e0

6.5 mm

DS2405Z+T&R

Maxim Integrated

MEMORY CIRCUIT

INDUSTRIAL

4

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

ASYNCHRONOUS

64 words

3/5

1

SMALL OUTLINE

SOT-223

SRAMs

2.3 mm

85 Cel

64X1

64

-40 Cel

MATTE TIN

DUAL

R-PDSO-G4

1

6 V

1.8 mm

3.5 mm

Not Qualified

64 bit

2.8 V

e3

6.5 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.