44 Other Function Memory ICs 84

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MR2A16ACYS35	Freescale Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words			3.3		3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		256KX16	256K	-40 Cel	MATTE TIN	DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	40	260	.028 Amp		18.41 mm	35 ns
MR2A16AVYS35	NXP Semiconductors	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words			3.3			16	SMALL OUTLINE, THIN PROFILE			.8 mm	105 Cel		256KX16	256K	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm		4194304 bit	3 V							18.41 mm
MR0A16ACYS35	Freescale Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	165 mA	262144 words			3.3		3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		256KX16	256K	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	40	260	.028 Amp		18.41 mm	35 ns
MR2A16AYS35	Freescale Semiconductor	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words			3.3		3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		256KX16	256K	0 Cel	MATTE TIN	DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	40	260	.028 Amp		18.41 mm	35 ns
MR0A16AYS35	Freescale Semiconductor	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	155 mA	262144 words			3.3		3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		256KX16	256K	0 Cel	MATTE TIN	DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	40	260	.028 Amp		18.41 mm	35 ns
MR256A08BYS35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	65 mA	32768 words			3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		32KX8	32K	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.007 Amp		18.41 mm	35 ns
MR256A08BYS35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	65 mA	32768 words			3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		32KX8	32K	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.007 Amp		18.41 mm	35 ns
MR256A08BCYS35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	65 mA	32768 words			3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.007 Amp		18.41 mm	35 ns
MR2A16ATS35C	Freescale Semiconductor	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words			3.3		3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		256KX16	256K	0 Cel	MATTE TIN	DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	40	260	.028 Amp		18.41 mm	35 ns
MR256A08BCYS35R	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	65 mA	32768 words			3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	262144 bit	3 V					.007 Amp		18.41 mm	35 ns
MR0A08BYS35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	65 mA	131072 words			3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		128KX8	128K	0 Cel		DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V					.007 Amp		18.41 mm	35 ns
MR2A08AMYS35	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	ASYNCHRONOUS	135 mA	262144 words			3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel		256KX8	256K	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	2097152 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.02 Amp		18.41 mm	35 ns
MR2A16AMYS35	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	ASYNCHRONOUS		262144 words			3.3			16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		256KX16	256K	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm		4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			18.41 mm
MR2A08AMYS35R	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	ASYNCHRONOUS	135 mA	262144 words			3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel		256KX8	256K	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	2097152 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.02 Amp		18.41 mm	35 ns
MR0A08BYS35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	65 mA	131072 words			3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		128KX8	128K	0 Cel		DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V					.007 Amp		18.41 mm	35 ns
MR0A16AYS35R	Freescale Semiconductor	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	155 mA	65536 words			3.3		3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		64KX16	64K	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e3	40	260	.028 Amp		18.41 mm	35 ns
MR2A16AVYS35R	Freescale Semiconductor	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words			3.3		3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		256KX16	256K	0 Cel	MATTE TIN	DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	40	260	.028 Amp		18.41 mm	35 ns
MR0A08BCYS35R	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	70 mA	131072 words			3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		128KX8	128K	-40 Cel		DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V					.007 Amp		18.41 mm	35 ns
MR2A16AMYS35R	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	ASYNCHRONOUS		262144 words			3.3			16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		256KX16	256K	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm		4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			18.41 mm
SAA4955HL	NXP Semiconductors	MEMORY CIRCUIT	COMMERCIAL	44	QFP		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	70 mA	245772 words			3.3		3.3	12	FLATPACK	QFP44,.47SQ,32	Other Memory ICs	.8 mm	70 Cel		245772X12	245772	0 Cel	Tin (Sn)	QUAD	S-PQFP-G44		3.6 V				Not Qualified	2949264 bit	3 V	IT ALSO REQUIRES 3 TO 5.5V SUPPLY	e3			.01 Amp			21 ns
AT29C1024	Microchip Technology	MEMORY CIRCUIT		44			UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		UNSPECIFIED	ASYNCHRONOUS		65536 words			5	EPROM+FLASH		16							64KX16	64K			QUAD	X-XQCC-X44		5.5 V					1048576 bit	4.5 V								70 ns
Z8038AC1V	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	44	QCCJ		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	ASYNCHRONOUS	250 mA	128 words			5		5	8	CHIP CARRIER	LDCC44,.7SQ	FIFOs	1.27 mm	70 Cel		128X8	128	0 Cel	TIN LEAD	QUAD	S-PQCC-J44		5.25 V	4.7 mm	6 MHz	16.5862 mm	Not Qualified	1024 bit	4.75 V		e0					16.5862 mm
Z8038C6V	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	44	QCCJ		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	ASYNCHRONOUS	250 mA	128 words			5		5	8	CHIP CARRIER	LDCC44,.7SQ	FIFOs	1.27 mm	85 Cel		128X8	128	-40 Cel	TIN LEAD	QUAD	S-PQCC-J44		5.25 V	4.7 mm	4 MHz	16.5862 mm	Not Qualified	1024 bit	4.75 V		e0					16.5862 mm
Z8038C1V	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	44	QCCJ		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	ASYNCHRONOUS	250 mA	128 words			5		5	8	CHIP CARRIER	LDCC44,.7SQ	FIFOs	1.27 mm	70 Cel		128X8	128	0 Cel	TIN LEAD	QUAD	S-PQCC-J44		5.25 V	4.7 mm	4 MHz	16.5862 mm	Not Qualified	1024 bit	4.75 V		e0					16.5862 mm
Z8038AC6V	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	44	QCCJ		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	ASYNCHRONOUS	250 mA	128 words			5		5	8	CHIP CARRIER	LDCC44,.7SQ	FIFOs	1.27 mm	85 Cel		128X8	128	-40 Cel	TIN LEAD	QUAD	S-PQCC-J44		5.25 V	4.7 mm	6 MHz	16.5862 mm	Not Qualified	1024 bit	4.75 V		e0					16.5862 mm
MR1A16AVYS35	NXP Semiconductors	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	165 mA	131072 words			3.3		3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	105 Cel		128KX16	128K	-40 Cel	MATTE TIN	DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	2097152 bit	3 V		e3	40	260	.028 Amp		18.41 mm	35 ns
MR0A16AVYS35	NXP Semiconductors	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	165 mA	131072 words			3.3		3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	105 Cel		128KX16	128K	-40 Cel	MATTE TIN	DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	2097152 bit	3 V		e3	40	260	.028 Amp		18.41 mm	35 ns
SM2402T-10	Infineon Technologies		COMMERCIAL	44	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING		160 mA	4194304 words	1,2,4,8,FP	COMMON			2.5/3.3,3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	4MX4	4M	0 Cel		DUAL	R-PDSO-G44				100 MHz		Not Qualified	16777216 bit						.002 Amp	1,2,4,8		5 ns
S71NS128NA0BJWSD0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					9.2 mm
S71NS128NA0BJWME0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					7.7 mm
S71NS128NA0BJWMN0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					7.7 mm
S71NS128NA0BJWME2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					7.7 mm
S71NS128NA0BJWMN2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					7.7 mm
S71NS128NA0BJWMF2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					7.7 mm
S71NS128NA0BJWSZ3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					9.2 mm
S71NS128NA0BJWSM0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					9.2 mm
S71NS128NA0BJWMD3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					7.7 mm
S71NS128NA0BJWSE2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					9.2 mm
S71NS128NA0BJWSF2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					9.2 mm
S71NS128NA0BJWMF3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					7.7 mm
S71NS128NA0BJWSN2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					9.2 mm
S71NS128NA0BJWMM3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					7.7 mm
S71NS128NA0BJWMM2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					7.7 mm
S71NS128NA0BJWSM2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					9.2 mm
S71NS128NA0BJWSF3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					9.2 mm
S71NS128NA0BJWSP3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					9.2 mm
S71NS128NA0BJWSW0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					9.2 mm
S71NS128NA0BJWMY2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					7.7 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.