44 Other Function Memory ICs 84

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
S71NS128NA0BJWMP2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		8388608 words			1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm			6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1						7.7 mm
S71NS128NA0BJWMP3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		8388608 words			1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm			6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1						7.7 mm
S71NS128NA0BJWMM0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		8388608 words			1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm			6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1						7.7 mm
S71NS128NA0BJWSW2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		8388608 words			1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm			8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1						9.2 mm
S71NS128NA0BJWMY0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		8388608 words			1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm			6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1						7.7 mm
SM2403T-7.5	Infineon Technologies		COMMERCIAL	44	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			240 mA	2097152 words	1,2,4,8,FP	COMMON		2.5/3.3,3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	Other Memory ICs		.8 mm	70 Cel	3-STATE	2MX8	2M	0 Cel		DUAL	R-PDSO-G44					133 MHz		Not Qualified	16777216 bit							.002 Amp	1,2,4,8		4.5 ns
S71NS128NA0BJWSM3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		8388608 words			1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm			8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1						9.2 mm
S71NS128NA0BJWMF0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		8388608 words			1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm			6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1						7.7 mm
S71NS128NA0BJWSP2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		8388608 words			1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm			8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1						9.2 mm
S71NS128NA0BJWMZ3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		8388608 words			1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm			6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1						7.7 mm
S71NS128NA0BJWSZ0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		8388608 words			1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm			8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1						9.2 mm
S71NS128NA0BJWMW0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		8388608 words			1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm			6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1						7.7 mm
S71NS128NA0BJWME3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		8388608 words			1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm			6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1						7.7 mm
S71NS128NA0BJWSY2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		8388608 words			1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm			8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1						9.2 mm
S71NS128NA0BJWSD2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		8388608 words			1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm			8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1						9.2 mm
S71NS128NA0BJWMW3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		8388608 words			1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm			6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1						7.7 mm
S71NS128NA0BJWMY3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		8388608 words			1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm			6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1						7.7 mm
SM2403T-10	Infineon Technologies		COMMERCIAL	44	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			160 mA	2097152 words	1,2,4,8,FP	COMMON		2.5/3.3,3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	Other Memory ICs		.8 mm	70 Cel	3-STATE	2MX8	2M	0 Cel		DUAL	R-PDSO-G44					100 MHz		Not Qualified	16777216 bit							.002 Amp	1,2,4,8		5 ns
S71NS128NA0BJWMP0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		8388608 words			1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm			6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1						7.7 mm
S71NS128NA0BJWSD3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		8388608 words			1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm			8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1						9.2 mm
S71NS128NA0BJWMD0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		8388608 words			1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm			6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1						7.7 mm
S71NS128NA0BJWSF0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		8388608 words			1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm			8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1						9.2 mm
S71NS128NA0BJWMD2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		8388608 words			1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm			6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1						7.7 mm
S71NS128NA0BJWMZ2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		8388608 words			1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm			6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1						7.7 mm
SM2402T-7.5	Infineon Technologies		COMMERCIAL	44	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			240 mA	4194304 words	1,2,4,8,FP	COMMON		2.5/3.3,3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	Other Memory ICs		.8 mm	70 Cel	3-STATE	4MX4	4M	0 Cel		DUAL	R-PDSO-G44					133 MHz		Not Qualified	16777216 bit							.002 Amp	1,2,4,8		4.5 ns
S71NS128NA0BJWSZ2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		8388608 words			1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm			8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1						9.2 mm
S71NS128NA0BJWMZ0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		8388608 words			1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm			6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1						7.7 mm
S71NS128NA0BJWMW2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		8388608 words			1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm			6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1						7.7 mm
S71NS128NA0BJWMN3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		8388608 words			1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm			6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1						7.7 mm
S71NS128NA0BJWSP0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		8388608 words			1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm			8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1						9.2 mm
XQR18V04VQ44N	Xilinx	CONFIGURATION MEMORY	OTHER	44	QFP		SQUARE	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		50 mA					2.5/3.3,3.3		FLATPACK	TQFP44,.47SQ,32	Flash Memories	10	.8 mm	100 Cel				-55 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3			2000 Write/Erase Cycles	20 MHz		Not Qualified	4194304 bit			e0	30	240	NOR TYPE	.02 Amp
UPD485506G5-25	Renesas Electronics		COMMERCIAL	44	TSOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			140 mA				5	5		SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	Other Memory ICs		.8 mm	70 Cel				0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44							Not Qualified				e0				.14 Amp			18 ns
UPD485506G5-27	Renesas Electronics		COMMERCIAL	44	TSOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			140 mA				5	5		SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	Other Memory ICs		.8 mm	70 Cel				0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44							Not Qualified				e0				.14 Amp			18 ns
HM530281RTT-20	Renesas Electronics		COMMERCIAL	44	TSOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			135 mA				5	5		SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	Other Memory ICs		.8 mm	70 Cel				0 Cel		DUAL	R-PDSO-G44							Not Qualified								.025 Amp			18 ns
HM530281RTT-25	Renesas Electronics		COMMERCIAL	44	TSOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			120 mA				5	5		SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	Other Memory ICs		.8 mm	70 Cel				0 Cel		DUAL	R-PDSO-G44							Not Qualified								.025 Amp			23 ns
UPD485506G5-35	Renesas Electronics		COMMERCIAL	44	TSOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			140 mA				5	5		SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	Other Memory ICs		.8 mm	70 Cel				0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44							Not Qualified				e0				.14 Amp			25 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.