52 Other Function Memory ICs 40

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
MT38W2011AA033JZZI.X68	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	52	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B52	1.95 V	1.2 mm	4 mm		67108864 bit	1.7 V	IT ALSO CONTAINS 16MBIT(1MBIT X 16) PSRAM			6 mm
M8813F2Y-15K1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND			131072 words	5			8	CHIP CARRIER			1.27 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQCC-J52	5.5 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.5 V				19.1262 mm
DSM2180F3V-90T6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS		131072 words	3.3			8	FLATPACK			.65 mm	85 Cel	128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	S-PQFP-G52	3.6 V	2.35 mm	10 mm	Not Qualified	1048576 bit	3 V		e4		10 mm
DSM2180F3-90T6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS		131072 words	5			8	FLATPACK			.65 mm	85 Cel	128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	S-PQFP-G52	5.5 V	2.35 mm	10 mm	Not Qualified	1048576 bit	4.5 V		e4		10 mm
DSM2180F3-90K6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	ASYNCHRONOUS		131072 words	5			8	CHIP CARRIER			1.27 mm	85 Cel	128KX8	128K	-40 Cel	MATTE TIN	QUAD	S-PQCC-J52	5.5 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.5 V		e3		19.1262 mm
M8813F2Y-15T1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING			131072 words	5			8	FLATPACK			.65 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQFP-G52	5.5 V	2.35 mm	10 mm	Not Qualified	1048576 bit	4.5 V				10 mm
DSM2180F3-15K6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	ASYNCHRONOUS		131072 words	5			8	CHIP CARRIER			1.27 mm	85 Cel	128KX8	128K	-40 Cel	MATTE TIN	QUAD	S-PQCC-J52	5.5 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.5 V		e3		19.1262 mm
M8803F2Y-15K1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND			131072 words	5			8	CHIP CARRIER			1.27 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQCC-J52	5.5 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.5 V				19.1262 mm
DSM2180F3V-90K6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	ASYNCHRONOUS		131072 words	3.3			8	CHIP CARRIER			1.27 mm	85 Cel	128KX8	128K	-40 Cel	MATTE TIN	QUAD	S-PQCC-J52	3.6 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	3 V		e3		19.1262 mm
M8803F3Y-15T1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING			131072 words	5			8	FLATPACK			.65 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQFP-G52	5.5 V	2.35 mm	10 mm	Not Qualified	1048576 bit	4.5 V				10 mm
M8813F3Y-15T1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING			131072 words	5			8	FLATPACK			.65 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQFP-G52	5.5 V	2.35 mm	10 mm	Not Qualified	1048576 bit	4.5 V				10 mm
DSM2180F3-15T6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS		131072 words	5			8	FLATPACK			.65 mm	85 Cel	128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	S-PQFP-G52	5.5 V	2.35 mm	10 mm	Not Qualified	1048576 bit	4.5 V		e4		10 mm
M8803F2Y-15T1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING			131072 words	5			8	FLATPACK			.65 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQFP-G52	5.5 V	2.35 mm	10 mm	Not Qualified	1048576 bit	4.5 V				10 mm
M8813F3Y-15T1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING			131072 words	5			8	FLATPACK			.65 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQFP-G52	5.5 V	2.35 mm	10 mm	Not Qualified	1048576 bit	4.5 V				10 mm
M8803F2Y-15T1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING			131072 words	5			8	FLATPACK			.65 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQFP-G52	5.5 V	2.35 mm	10 mm	Not Qualified	1048576 bit	4.5 V				10 mm
DSM2190F4V-15T6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words	3.3			8	FLATPACK			.65 mm	85 Cel	256KX8	256K	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	S-PQFP-G52	3.6 V	2.35 mm	10 mm	Not Qualified	2097152 bit	3 V	ALSO CONTAINS 32K X 8 SECONDARY FLASH MEMORY	e4		10 mm
PSD8131V12M1T	STMicroelectronics	MEMORY CIRCUIT		52		SQUARE	PLASTIC/EPOXY	YES			GULL WING								FLATPACK									QUAD	S-PQFP-G52				Not Qualified
PSD8131V12MT	STMicroelectronics	MEMORY CIRCUIT		52		SQUARE	PLASTIC/EPOXY	YES			GULL WING								FLATPACK									QUAD	S-PQFP-G52				Not Qualified
PSD8131V90M1T	STMicroelectronics	MEMORY CIRCUIT		52		SQUARE	PLASTIC/EPOXY	YES			GULL WING								FLATPACK									QUAD	S-PQFP-G52				Not Qualified
M8813F1Y-15K1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND			131072 words	5			8	CHIP CARRIER			1.27 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQCC-J52	5.5 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.5 V				19.1262 mm
M8813F3Y-15K1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND			131072 words	5			8	CHIP CARRIER			1.27 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQCC-J52	5.5 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.5 V				19.1262 mm
M8803F3Y-15K1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND			131072 words	5			8	CHIP CARRIER			1.27 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQCC-J52	5.5 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.5 V				19.1262 mm
M8813F1Y-15T1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING			131072 words	5			8	FLATPACK			.65 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQFP-G52	5.5 V	2.35 mm	10 mm	Not Qualified	1048576 bit	4.5 V				10 mm
M8803F3Y-15T1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING			131072 words	5			8	FLATPACK			.65 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQFP-G52	5.5 V	2.35 mm	10 mm	Not Qualified	1048576 bit	4.5 V				10 mm
M8803F2Y-15K1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND			131072 words	5			8	CHIP CARRIER			1.27 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQCC-J52	5.5 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.5 V				19.1262 mm
PSD8131V70M1T	STMicroelectronics	MEMORY CIRCUIT		52		SQUARE	PLASTIC/EPOXY	YES			GULL WING								FLATPACK									QUAD	S-PQFP-G52				Not Qualified
M8813F3Y-15K1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND			131072 words	5			8	CHIP CARRIER			1.27 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQCC-J52	5.5 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.5 V				19.1262 mm
M8803F3Y-15K1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND			131072 words	5			8	CHIP CARRIER			1.27 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQCC-J52	5.5 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	4.5 V				19.1262 mm
DSM2180F3V-15T6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS		131072 words	3.3			8	FLATPACK			.65 mm	85 Cel	128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	S-PQFP-G52	3.6 V	2.35 mm	10 mm	Not Qualified	1048576 bit	3 V		e4		10 mm
PSD8131V70MT	STMicroelectronics	MEMORY CIRCUIT		52		SQUARE	PLASTIC/EPOXY	YES			GULL WING								FLATPACK									QUAD	S-PQFP-G52				Not Qualified
PSD8131V90MT	STMicroelectronics	MEMORY CIRCUIT		52		SQUARE	PLASTIC/EPOXY	YES			GULL WING								FLATPACK									QUAD	S-PQFP-G52				Not Qualified
DSM2180F3V-15K6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	ASYNCHRONOUS		131072 words	3.3			8	CHIP CARRIER			1.27 mm	85 Cel	128KX8	128K	-40 Cel	MATTE TIN	QUAD	S-PQCC-J52	3.6 V	4.57 mm	19.1262 mm	Not Qualified	1048576 bit	3 V		e3		19.1262 mm
DSM2190F4V-15K6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words	3.3			8	CHIP CARRIER			1.27 mm	85 Cel	256KX8	256K	-40 Cel	MATTE TIN	QUAD	S-PQCC-J52	3.6 V	4.57 mm	19.1262 mm	Not Qualified	2097152 bit	3 V	ALSO CONTAINS 32K X 8 SECONDARY FLASH MEMORY	e3		19.1262 mm
S71VS/XS-R	Infineon Technologies	MEMORY CIRCUIT	OTHER	52	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B52	1.95 V	1 mm	5 mm		67108864 bit	1.7 V				6 mm
S71VS064RB0AHT8M3	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	52			PLASTIC/EPOXY	YES		CMOS					1.8	FLASH+PSRAM	1.8			BGA52,6X10,20	Other Memory ICs		85 Cel			-40 Cel							Not Qualified
S71VS064RB0AHTCL3	Infineon Technologies	MEMORY CIRCUIT	OTHER	52			PLASTIC/EPOXY	YES		CMOS					1.8	FLASH+PSRAM	1.8			BGA52,6X10,20	Other Memory ICs		85 Cel			-25 Cel							Not Qualified
MT38W1011AA033JZZI.XB8	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	52	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		2097152 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B52	1.95 V	1.2 mm	4 mm		33554432 bit	1.7 V	IT ALSO CONTAINS 16MBIT(1MBIT X 16) PSRAM			6 mm
MT43C8129EJ-12	Micron Technology	VIDEO DRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND		160 mA	131072 words	5		5	8	CHIP CARRIER	LDCC52,.8SQ	Other Memory ICs	1.27 mm	70 Cel	128KX8	128K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	S-PQCC-J52				Not Qualified	1048576 bit			e0	.001 Amp		120 ns
MT43C8128EJ-12	Micron Technology	VIDEO DRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND		160 mA	131072 words	5		5	8	CHIP CARRIER	LDCC52,.8SQ	Other Memory ICs	1.27 mm	70 Cel	128KX8	128K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	S-PQCC-J52				Not Qualified	1048576 bit			e0	.001 Amp		120 ns
MT38W2021AA033JZZI.X69	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	52	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	32MX16	32M	-40 Cel		BOTTOM	R-PBGA-B52	2 V	1.2 mm	4 mm		536870912 bit	1.7 V	IT ALSO CONTAINS 64MBIT(4MBIT X 16) PSRAM			6 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.