58 Other Function Memory ICs 14

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Data Polling
MT28F322D15FH-10TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	58	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			2097152 words	1.5			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel	2MX16	2M	-40 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B58	1.575 V	1.2 mm	7 mm	Not Qualified		33554432 bit	1.425 V		e1			12 mm
MT28F322D18FH-103TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	58	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	2097152 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA58,8X13,30	Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B58	1.95 V	1.2 mm	7 mm	Not Qualified	TOP	33554432 bit	1.65 V	4	e0	NOR TYPE	.000001 Amp	12 mm	YES	100 ns	NO
MT28F322D18FH-11TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	58	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	2097152 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA58,8X13,30	Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B58	1.95 V	1.2 mm	7 mm	Not Qualified	TOP	33554432 bit	1.65 V	4	e0	NOR TYPE	.000001 Amp	12 mm	YES	110 ns	NO
MT28F322D18FH-103BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	58	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	2097152 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA58,8X13,30	Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B58	1.95 V	1.2 mm	7 mm	Not Qualified	BOTTOM	33554432 bit	1.65 V	4	e0	NOR TYPE	.000001 Amp	12 mm	YES	100 ns	NO
MT28F322D15FH-104TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	58	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			2097152 words	1.5			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel	2MX16	2M	-40 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B58	1.575 V	1.2 mm	7 mm	Not Qualified		33554432 bit	1.425 V		e1			12 mm
MT28F322D20FH-10TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	58	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			2097152 words	2			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel	2MX16	2M	-40 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B58	2.2 V	1.2 mm	7 mm	Not Qualified		33554432 bit	1.8 V		e1			12 mm
MT28F322D18FH-11BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	58	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	2097152 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA58,8X13,30	Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B58	1.95 V	1.2 mm	7 mm	Not Qualified	BOTTOM	33554432 bit	1.65 V	4	e0	NOR TYPE	.000001 Amp	12 mm	YES	110 ns	NO
MT28F322D18FH-10TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	58	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	2097152 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA58,8X13,30	Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B58	1.95 V	1.2 mm	7 mm	Not Qualified	TOP	33554432 bit	1.65 V	4	e0	NOR TYPE	.000001 Amp	12 mm	YES	100 ns	NO
MT28F322D20FH-954BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	58	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			2097152 words	2			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel	2MX16	2M	-40 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B58	2.2 V	1.2 mm	7 mm	Not Qualified		33554432 bit	1.8 V		e1			12 mm
MT28F322D20FH-10BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	58	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			2097152 words	2			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel	2MX16	2M	-40 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B58	2.2 V	1.2 mm	7 mm	Not Qualified		33554432 bit	1.8 V		e1			12 mm
MT28F322D18FH-10BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	58	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	2097152 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA58,8X13,30	Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B58	1.95 V	1.2 mm	7 mm	Not Qualified	BOTTOM	33554432 bit	1.65 V	4	e0	NOR TYPE	.000001 Amp	12 mm	YES	100 ns	NO
MT28F322D20FH-954TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	58	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			2097152 words	2			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel	2MX16	2M	-40 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B58	2.2 V	1.2 mm	7 mm	Not Qualified		33554432 bit	1.8 V		e1			12 mm
MT28F322D15FH-104BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	58	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			2097152 words	1.5			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel	2MX16	2M	-40 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B58	1.575 V	1.2 mm	7 mm	Not Qualified		33554432 bit	1.425 V		e1			12 mm
MT28F322D15FH-10BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	58	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			2097152 words	1.5			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel	2MX16	2M	-40 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B58	1.575 V	1.2 mm	7 mm	Not Qualified		33554432 bit	1.425 V		e1			12 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.