LFBGA Other Function Memory ICs 2,068

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
MT28C256564W18DFT-F60P70TBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1		12 mm
MT28C128532W18DBW-F70P70KTTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C256532W18TFT-F606P856TTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1		12 mm
MT28C256532W18SFT-F705P85BTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	8MX16	8M	-25 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1	.00019 Amp	12 mm	85 ns
MT28C128564W18DBW-F70P70KTBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C128564W18DFW-F70P70KBBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C128532W18EBW-F705P706BTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C128516W30DBW-F70P70KTBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 1M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C256564W18DBT-F70P85BTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1		12 mm
MT28C128532W18DBW-F70P70TBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C256532W18SBT-F705P70BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1		12 mm
MT28C128516W18DFW-F606P85BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN LEAD SILVER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 1M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e0		10 mm
MT28C256564W18TFT-F605P856TBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1		12 mm
MT28C128532W18DBW-F60P85KTTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C256532W18DBT-F605P85BTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1		12 mm
MT28C128532W30EFW-F705P706KBTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C128564W18EBW-F706P706KBBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C128532W30DFW-F705P85BTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	1.8	FLASH+SRAM	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1	.00014 Amp	10 mm	85 ns
MT28C128564W30DFW-F706P85TBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C128532W30DFW-F706P85KBBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C256564W18TBT-F705P706TTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1		12 mm
MT28C128532W18DBW-F606P85BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C128532W18EBW-F705P856TTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C128564W30DFW-F70P70BTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C128532W30DBW-F706P85KTBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C128532W18DFW-F605P70BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C128564W18DFW-F70P70KTTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C128564W30EFW-F705P706TTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C256532W18DFT-F60P85TTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1		12 mm
MT28C128516W18DBW-F60P85BTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 1M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C128516W18DBW-F70P70KTBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 1M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C128532W30DFW-F70P70TTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	1.8	FLASH+SRAM	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1	.00014 Amp	10 mm	70 ns
MT28C256532W18DFT-F706P85BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1		12 mm
MT28C128532W30DBW-F70P70KTTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C128532W18DBW-F706P85KTBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C128532W18DFW-F706P70KTTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C256532W18DFT-F705P70BTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1		12 mm
MT28C128532W18DBW-F606P70BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C128564W18EBW-F605P706KTBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C128564W18EFW-F606P706TBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C128532W18DFW-F606P85TBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C256564W18TFT-F605P856BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1		12 mm
MT28C256532W18DFT-F605P70BTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1		12 mm
MT28C128564W18DFW-F60P85TBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C128532W18EBW-F605P856KTTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C128564W18EBW-F706P856KBBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C128532W30EFW-F705P706KTBWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm
MT28C128564W18DBW-F60P85KBTWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH	e1		10 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.