LFBGA Other Function Memory ICs 2,068

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MR256A08BCMA35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	65 mA	32768 words	3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	32KX8	32K	-40 Cel		BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm	8 mm	Not Qualified	262144 bit	3 V					.007 Amp	8 mm	35 ns
MR256A08BMA35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	65 mA	32768 words	3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	32KX8	32K	0 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm	8 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.007 Amp	8 mm	35 ns
MR256A08BCMA35R	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	65 mA	32768 words	3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	32KX8	32K	-40 Cel		BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm	8 mm	Not Qualified	262144 bit	3 V					.007 Amp	8 mm	35 ns
MR256A08BMA35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	65 mA	32768 words	3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	32KX8	32K	0 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm	8 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.007 Amp	8 mm	35 ns
MR0D08BMA45R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	65 mA	131072 words	3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	70 Cel	128KX8	128K	0 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm	8 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.008 Amp	8 mm	45 ns
MR2A16AVMA35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		262144 words	3.3		3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	105 Cel	256KX16	256K	-40 Cel		BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm	8 mm	Not Qualified	4194304 bit	3 V			40	260	.028 Amp	8 mm	35 ns
MR2A16ACMA35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		262144 words	3.3		3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	256KX16	256K	-40 Cel		BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm	8 mm	Not Qualified	4194304 bit	3 V			40	260	.028 Amp	8 mm	35 ns
MR256D08BMA45	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	65 mA	32768 words	3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	70 Cel	32KX8	32K	0 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm	8 mm	Not Qualified	262144 bit	3 V			40	260	.008 Amp	8 mm	45 ns
MR0A08BMA35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	65 mA	131072 words	3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	128KX8	128K	0 Cel		BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm	8 mm	Not Qualified	1048576 bit	3 V					.007 Amp	8 mm	35 ns
MR0A16ACMA35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	165 mA	65536 words	3.3		3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	64KX16	64K	-40 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm	8 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.012 Amp	8 mm	35 ns
MR2A16AVMA35R	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		262144 words	3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.75 mm	105 Cel	256KX16	256K	-40 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm	8 mm		4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
MR0A16AMA35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	155 mA	65536 words	3.3		3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	64KX16	64K	0 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm	8 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.012 Amp	8 mm	35 ns
M36W832TE85ZA1S	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	2MX16	2M	0 Cel		BOTTOM	R-PBGA-B66		3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANISED AS 512K X 16					12 mm
M76DW52003BA70Z	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8	e0			.0001 Amp	11.6 mm	70 ns
M36DR432B120ZA6C	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66		2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	THE DEVICE ALSO CONTAINS A 4 MBIT (256K X16) SRAM	e0				12 mm	120 ns
M76DW62000A70ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	4194304 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	STATIC RAM IS ORGANIZED AS 512K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8				.0001 Amp	11.6 mm	70 ns
M36WT864BF100ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	96	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B96		2.2 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.65 V	SRAM ORGANISATION IS 512K X 16					14 mm
M76DW63000A70ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	4194304 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	STATIC RAM IS ORGANIZED AS 512K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8				.0001 Amp	11.6 mm	70 ns
M36W216B85ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	1MX16	1M	0 Cel		BOTTOM	R-PBGA-B66		3.3 V	1.4 mm	8 mm	Not Qualified	16777216 bit	2.7 V	ALSO CONTAINS 128K X 16 SRAM					12 mm
M36DR232B100ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66		2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	THE DEVICE ALSO CONTAINS A 2 MBIT (128K X16) SRAM	e0			.000025 Amp	12 mm	100 ns
M36W832T100ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	2MX16	2M	0 Cel		BOTTOM	R-PBGA-B66		3.3 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 512K X 16 SRAM					12 mm
M72DW64000B90ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	4194304 words	3	FLASH+PSRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	PSEUDO STATIC RAM IS ORGANIZED AS 1M X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8				.0015 Amp	11.6 mm	90 ns
M36W216TI70ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	1048576 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	1MX16	1M	-40 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66		3.3 V	1.4 mm	8 mm	Not Qualified	16777216 bit	2.7 V	STATIC RAM ORGANISED AS 128KBIT X 16	e1			.00001 Amp	12 mm	70 ns
M36W216T85ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	1MX16	1M	-40 Cel		BOTTOM	R-PBGA-B66		3.3 V	1.4 mm	8 mm	Not Qualified	16777216 bit	2.7 V	ALSO CONTAINS 128K X 16 SRAM					12 mm
M36LLR8860D1ZAQ	STMicroelectronics	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	52 mA	16777216 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-25 Cel	TIN LEAD	BOTTOM	R-PBGA-B88		1.95 V	1.4 mm	8 mm	Not Qualified	268435456 bit	1.7 V	PSRAM ALSO ORGANIZED AS 4M X 16	e0			.00011 Amp	10 mm
M36W832TE85ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B66		3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANISED AS 512K X 16	e0			.00002 Amp	12 mm	85 ns
M36DR232A100ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66		2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	THE DEVICE ALSO CONTAINS A 2 MBIT (128K X16) SRAM	e0			.000025 Amp	12 mm	100 ns
M36WT864TF100ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	96	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B96		2.2 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.65 V	SRAM ORGANISATION IS 512K X 16					14 mm
M36LLR8760D1ZAQT	STMicroelectronics	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	52 mA	16777216 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-25 Cel	TIN LEAD	BOTTOM	R-PBGA-B88		1.95 V	1.4 mm	8 mm	Not Qualified	268435456 bit	1.7 V	PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e0			.00011 Amp	10 mm
M36DR432A100ZA6C	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66		2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	THE DEVICE ALSO CONTAINS A 4 MBIT (256K X16) SRAM	e0				12 mm	100 ns
M36DR232A100ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66		2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	THE DEVICE ALSO CONTAINS A 2 MBIT (128K X16) SRAM	e0			.000025 Amp	12 mm	100 ns
M36W432T70ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66		3.3 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16	e1				12 mm	70 ns
M36LLR8760M1ZAQ	STMicroelectronics	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	52 mA	16777216 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-25 Cel	TIN LEAD	BOTTOM	R-PBGA-B88		1.95 V	1.4 mm	8 mm	Not Qualified	268435456 bit	1.7 V	PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e0			.00011 Amp	10 mm
M74DW66500B70ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	30 mA	4194304 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	PSEUDO STATIC RAM IS ORGANIZED AS 2M X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8	e0			.0015 Amp	11.6 mm	70 ns
M36W216T100ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	1MX16	1M	0 Cel		BOTTOM	R-PBGA-B66		3.3 V	1.4 mm	8 mm	Not Qualified	16777216 bit	2.7 V	ALSO CONTAINS 128K X 16 SRAM					12 mm
M36DR432BD85ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	26 mA	2097152 words	2	FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66		2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.8 V	SRAM IS ORGANIZED AS 256K X 16	e0			.00001 Amp	12 mm	85 ns
M76DW52003BA70ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8	e0			.0001 Amp	11.6 mm	70 ns
M72DW64000B70ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	4194304 words	3	FLASH+PSRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	PSEUDO STATIC RAM IS ORGANIZED AS 1M X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8	e0			.0015 Amp	11.6 mm	70 ns
M36LLR8860T1ZAQE	STMicroelectronics	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	52 mA	16777216 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88		1.95 V	1.4 mm	8 mm	Not Qualified	268435456 bit	1.7 V	PSRAM ALSO ORGANIZED AS 4M X 16	e1			.00011 Amp	10 mm
M36LLR8760D1ZAQE	STMicroelectronics	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	52 mA	16777216 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88		1.95 V	1.4 mm	8 mm	Not Qualified	268435456 bit	1.7 V	PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e1			.00011 Amp	10 mm
M36LLR8760T1ZAQT	STMicroelectronics	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	52 mA	16777216 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-25 Cel	TIN LEAD	BOTTOM	R-PBGA-B88		1.95 V	1.4 mm	8 mm	Not Qualified	268435456 bit	1.7 V	PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e0			.00011 Amp	10 mm
M36W432TG70ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B66		3.3 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM ORGANISED AS 256K X 16	e0			.00001 Amp	12 mm	70 ns
M36WT864TF85ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	96	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	4194304 words	1.8	FLASH+SRAM	1.8/2,3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA96,8X14,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B96		2.2 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.65 V	SRAM ORGANISATION IS 512K X 16	e0			.00002 Amp	14 mm	85 ns
M36W432T70ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B66		3.3 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16	e1				12 mm	70 ns
M36DR232B120ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66		2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	THE DEVICE ALSO CONTAINS A 2 MBIT (128K X16) SRAM	e0			.000025 Amp	12 mm	120 ns
M36W832BE100ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66		3.3 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 512K X 16 SRAM	e0			.00002 Amp	12 mm	100 ns
M36DR432A100ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66		2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	THE DEVICE ALSO CONTAINS A 4 MBIT (256K X16) SRAM	e0				12 mm	100 ns
M36DR432DA85ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	2097152 words	2	FLASH+SRAM	2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66		2.1 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.9 V	ALSO CONTAINS 256K X 16 SRAM	e1			.00001 Amp	12 mm	85 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.