LFBGA Other Function Memory ICs 2,068

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
M36W832T85ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	2MX16	2M	0 Cel		BOTTOM	R-PBGA-B66	3.3 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 512K X 16 SRAM					12 mm
M36W216B85ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	1MX16	1M	0 Cel		BOTTOM	R-PBGA-B66	3.3 V	1.4 mm	8 mm	Not Qualified	16777216 bit	2.7 V	ALSO CONTAINS 128K X 16 SRAM					12 mm
M36DR432BD10ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	26 mA	2097152 words	1.8	FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	SRAM IS ORGANIZED AS 256K X 16	e0			.00001 Amp	12 mm	100 ns
M36LLR8860M1ZAQT	STMicroelectronics	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	52 mA	16777216 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-25 Cel	TIN LEAD	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	8 mm	Not Qualified	268435456 bit	1.7 V	PSRAM ALSO ORGANIZED AS 4M X 16	e0			.00011 Amp	10 mm
M36LLR8860B1ZAQ	STMicroelectronics	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	52 mA	16777216 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-25 Cel	TIN LEAD	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	8 mm	Not Qualified	268435456 bit	1.7 V	PSRAM ALSO ORGANIZED AS 4M X 16	e0			.00011 Amp	10 mm
M36DR432AD12ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	26 mA	2097152 words	1.8	FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	SRAM IS ORGANIZED AS 256K X 16	e0			.00001 Amp	12 mm	120 ns
M36WT864TF70ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	96	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	4194304 words	1.8	FLASH+SRAM	1.8/2,3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA96,8X14,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B96	2.2 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.65 V	SRAM ORGANISATION IS 512K X 16	e0			.00002 Amp	14 mm	70 ns
M36LLR8860T1ZAQF	STMicroelectronics	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	52 mA	16777216 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	8 mm	Not Qualified	268435456 bit	1.7 V	PSRAM ALSO ORGANIZED AS 4M X 16	e1			.00011 Amp	10 mm
M36LLR8760T1ZAQF	STMicroelectronics	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	52 mA	16777216 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	8 mm	Not Qualified	268435456 bit	1.7 V	PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e1			.00011 Amp	10 mm
NAND01GW3M2BZC5E	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	137	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		134217728 words	3	FLASH+SDRAM	3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel	128MX8	128M	-30 Cel		BOTTOM	R-PBGA-B137	3.6 V	1.4 mm	10.5 mm	Not Qualified	1073741824 bit	2.5 V	LPSDRAM IS ORGANISED AS 16M X 32		40	260		13 mm
M36W832BE70ZA6S	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANISED AS 512K X 16	e0			.00002 Amp	12 mm	70 ns
M36LLR8760D1ZAQF	STMicroelectronics	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	52 mA	16777216 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	8 mm	Not Qualified	268435456 bit	1.7 V	PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e1			.00011 Amp	10 mm
M36W416BG85ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	1048576 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	1MX16	1M	0 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm	8 mm	Not Qualified	16777216 bit	2.7 V	STATIC RAM ORGANISED AS 256K X 16	e1			.00001 Amp	12 mm	85 ns
M36DR432A120ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	THE DEVICE ALSO CONTAINS A 4 MBIT (256K X16) SRAM	e0				12 mm	120 ns
M36W432B70ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16	e1				12 mm	70 ns
M36W832T85ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	2MX16	2M	0 Cel		BOTTOM	R-PBGA-B66	3.3 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 512K X 16 SRAM					12 mm
M36W216TI70ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	1048576 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	1MX16	1M	0 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm	8 mm	Not Qualified	16777216 bit	2.7 V	STATIC RAM ORGANISED AS 128KBIT X 16	e1			.00001 Amp	12 mm	70 ns
M36W432TG85ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM ORGANISED AS 256K X 16	e0			.00001 Amp	12 mm	85 ns
M76DW52004BA70ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B73	3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8				.0001 Amp	11.6 mm	70 ns
M36WT864BF70ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	96	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	4194304 words	1.8	FLASH+SRAM	1.8/2,3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA96,8X14,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B96	2.2 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.65 V	SRAM ORGANISATION IS 512K X 16	e0			.00002 Amp	14 mm	70 ns
M76DW52004TA90Z	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B73	3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8				.0001 Amp	11.6 mm	90 ns
M36W216TI70ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	1048576 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	1MX16	1M	0 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm	8 mm	Not Qualified	16777216 bit	2.7 V	STATIC RAM ORGANISED AS 128KBIT X 16	e1			.00001 Amp	12 mm	70 ns
NAND512W3M2AZC5F	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	137	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		33554432 words	3	FLASH+SDRAM	3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel	32MX8	32M	-30 Cel		BOTTOM	R-PBGA-B137	3.6 V	1.4 mm	10.5 mm	Not Qualified	268435456 bit	2.5 V	LPSDRAM IS ORGANISED AS 16M X 32		40	260		13 mm
M74DW66500B90ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	30 mA	4194304 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B73	3.6 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	PSEUDO STATIC RAM IS ORGANIZED AS 2M X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8				.0015 Amp	11.6 mm	90 ns
M76DW52004TA70ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B73	3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8				.0001 Amp	11.6 mm	70 ns
NAND512W3M2CZC5E	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	137	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		33554432 words	3	FLASH+SDRAM	3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel	32MX8	32M	-30 Cel		BOTTOM	R-PBGA-B137	3.6 V	1.4 mm	10.5 mm	Not Qualified	268435456 bit	2.5 V	LPSDRAM IS ORGANISED AS 16M X 32		40	260		13 mm
M36W432TG85ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM ORGANISED AS 256K X 16	e0			.00001 Amp	12 mm	85 ns
M36DR432B100ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	THE DEVICE ALSO CONTAINS A 4 MBIT (256K X16) SRAM	e0				12 mm	100 ns
M36W832T85ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B66	3.3 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 512K X 16 SRAM					12 mm
M36W832BE85ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANISED AS 512K X 16	e0			.00002 Amp	12 mm	85 ns
M36W832TE70ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANISED AS 512K X 16	e0			.00002 Amp	12 mm	70 ns
M36WT864TF100ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	96	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B96	2.2 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.65 V	SRAM ORGANISATION IS 512K X 16					14 mm
M76DW62000A90ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	4194304 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B73	3.6 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	STATIC RAM IS ORGANIZED AS 512K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8				.0001 Amp	11.6 mm	90 ns
M36W832T100ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B66	3.3 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 512K X 16 SRAM					12 mm
M36W432BG85ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM ORGANISED AS 256K X 16	e0			.00001 Amp	12 mm	85 ns
M36W432BG70ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM ORGANISED AS 256K X 16	e0			.00001 Amp	12 mm	70 ns
NAND512W3M2CZC5F	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	137	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		33554432 words	3	FLASH+SDRAM	3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel	32MX8	32M	-30 Cel		BOTTOM	R-PBGA-B137	3.6 V	1.4 mm	10.5 mm	Not Qualified	268435456 bit	2.5 V	LPSDRAM IS ORGANISED AS 16M X 32		40	260		13 mm
M36LLR8760B1ZAQF	STMicroelectronics	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	52 mA	16777216 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	8 mm	Not Qualified	268435456 bit	1.7 V	PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e1			.00011 Amp	10 mm
M36W216T85ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	1MX16	1M	-40 Cel		BOTTOM	R-PBGA-B66	3.3 V	1.4 mm	8 mm	Not Qualified	16777216 bit	2.7 V	ALSO CONTAINS 128K X 16 SRAM					12 mm
M36W832B100ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B66	3.3 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 512K X 16 SRAM					12 mm
M36W832TE100ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 512K X 16 SRAM	e0			.00002 Amp	12 mm	100 ns
M36DR432A120ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	THE DEVICE ALSO CONTAINS A 4 MBIT (256K X16) SRAM	e0				12 mm	120 ns
M36W832BE85ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANISED AS 512K X 16	e0			.00002 Amp	12 mm	85 ns
M36LLR8860M1ZAQ	STMicroelectronics	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	52 mA	16777216 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-25 Cel	TIN LEAD	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	8 mm	Not Qualified	268435456 bit	1.7 V	PSRAM ALSO ORGANIZED AS 4M X 16	e0			.00011 Amp	10 mm
M76DW52004BA90Z	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B73	3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8				.0001 Amp	11.6 mm	90 ns
M36W832BE70ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANISED AS 512K X 16	e0			.00002 Amp	12 mm	70 ns
M36W832BE70ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANISED AS 512K X 16	e0			.00002 Amp	12 mm	70 ns
M36W832BE70ZA1S	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	2MX16	2M	0 Cel		BOTTOM	R-PBGA-B66	3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANISED AS 512K X 16					12 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.